TLP590B

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

TLP590B
Telecommunication
Unit in mm
Programmable Controllers
Mos Gate Driver
MOS FET Gate Driver

The TOSHIBA TLP590B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected photo−
diode array in a six lead plastic DIP package.
TLP590B is suitable for MOS FET gate driver.

· UL recognized: UL1577, file No. E67349

Short Current

Short Current
Type Marking Of
Classification
Name Classification
(min.) IF

C20 20µA 20
TLP590B 10mA TOSHIBA 11−7A9
Standard 12µA 20, blank
Weight: 0.39g
(Note) Application type name for certification test, please
use standard product type name, i.e.

TLP590B(C20): TLP590B

Maximum Ratings (Ta = 25°C) Pin Configuration(top view)

Characteristics Symbol Rating Unit 1 6

Forward current IF 50 mA
2
Forward current derating
∆IF / °C -0.5 mA / °C
(Ta ≥ 25°C)
3 4
LED

Pulse forward current

IFP 1 A
(100µs pulse, 100 pps)
1. : Anode
Reverse voltage VR 3 V 2. : Cathode
3. : NC
Junction temperature Tj 125 °C
4. : Cathode
Foward current IFD 50 µA 6. : Anode
Detector

Reverse voltage VRD 10 V

Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -40~85 °C
Lead soldering temperature
Tsol 260 °C
(10sec.)
Isolation voltage
BVS 2500 Vrms
(AC, 1 min., R.H. ≤ 60%) (Note 1)

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3

shorted together, and pins 4 and 6 shorted together.

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 TLP590B
Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Forward current IF ― 20 25 mA
Operating temperature Topr -25 ― 85 °C

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V

LED

Reverse current IR VR = 3 V — — 10 µA
Capacitance CT V = 0, f = 1 MHz — 30 60 pF
Forward voltage VFD IFD = 10 µA — 7 — V
Detector

Reverse current IRD VRD = 10 V — 1 — nA

Capacitance
CTD V = 0, f = 1 MHz — — — pF
(anode to cathode)

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Open voltage VOC IF = 10 mA 7.0 8.0 — V

Short current ISC IF = 10 mA 12 20 — µA

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance input to output CS VS = 0, f = 1 MHz — 0.8 — pF

10 14
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×10 10 — Ω
AC, 1 minute 2500 — —
Vrms
Isolation voltage BVS AC, 1 second in oil — 5000 —
DC, 1 minute in oil — 5000 — Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Turn-on time ton IF = 20mA, RSH = 510kΩ — 0.2 — ms

CL =1000pF (Fig.1)
Turn-off time toff — 1 — ms

Fig. 1 Switching time test circuit

IF VOUT
IF
RSH CL
VOUT 5V
1V
0V
tON tOFF
RSH : External shunt resistance

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 TLP590B

IF – Ta ∆VF / ∆Ta – IF
100 -4.0

-3.6

coefficient ∆VF / ∆Ta (mV / ℃)

Forward voltage temperature
80
-3.2
Allowable forward current

-2.8
60
IF (mA)

-2.4

40 -2.0

-1.6

20
-1.2

-0.8
0
-20 0 20 40 60 80 100 0.1 0.3 0.5 1 3 5 10 30

Ambient temperature Ta (℃) Forward current IF (mA)

IF – VF IFP – DR
100 5000
Ta = 25°C Pulse width ≤ 100µs
3000
Ta = 25°C
(mA)
50
(mA)

30 1000
IFP
Forward current IF

500
Pulse forward current

300
10

100
5
50
3
30

1 10
3 10-3 3 10-2 3 10-1 3 100
1.0 1.2 1.4 1.6 1.8 2.0 2.2

Forward voltage VF (V) Duty cycle ratio DR

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 TLP590B

t t
IO – VO ON , OFF – CL
100
Ta = 25°C
RSH=2.4MΩ t
40 OFF
30 t

ON , OFF (ms)
1MΩ ON
510kΩ Ta = 25°C
(µA)

20 10
300kΩ IF = 20mA
3
Otuput current IO

t
IF = 0mA IF=20mA
0 VOUT
5mA 1

t
RSH CL

Switching time
10mA
-20 0.3
15mA IF
300kΩ
0.1
20mA 510kΩ VOUT
-40 1MΩ 0V 5V 1V
25mA 0.03 2.4MΩ
tON tOFF
-60 0.01
0 2 4 6 8 10 102 300 10 3
3000 104

Output voltage VO (V) Load capacitance CL (pF)

VOC – IF ISC – IF
10 100

RSH open
50
30
8
(µA)
(V)

1MΩ
10
VOC

ISC

6 510kΩ
5
Short current

3
Open voltage

300kΩ
4
1

0.5
2
Ta = 25°C 0.3
Ta = 25°C
RSH=2.4MΩ
0 0.1
1 3 5 10 30 50 100 1 3 5 10 30 50 100

Forward current IF (mA) Forward current IF (mA)

VOC – Ta ISC – Ta
12 24

10 20
(µA)
(V)

8 16
ISC
VOC

6 12
Short current
Open voltage

4 8

2 4
IF = 10mA IF = 10mA

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (℃) Ambient temperature Ta (℃)

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 TLP590B

RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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