TLP559(IGM)

TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO IC

TLP559(IGM)
TRANSISTOR INVERTER Unit: mm
INVERTER FOR AIR CONDITIONER
LINE RECEIVER
IPM INTERFACES

The TOSHIBA TLP559(IGM) consists of a GaAlAs high-output light

emitting diode and a high speed detector of one chip photo diode-
transistor.
This unit is 8-lead DIP package.
TLP559(IGM) has no internal base connection,and a Faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
TLP559(IGM) guarantees minimum and maximum of propagation
delay time,switching time dispersion,and high common mode
transient immunity.There for TLP559(IGM) is suitable for isolation
interface between IPM(Intelligent Power Module) and control IC
circuits in motor control application. JEDEC ―
EIAJ ―
l Isolation Voltage : 2500 Vrms (Min) TOSHIBA 11−10C4
l Common Mode Transient Immunity Weight: 0.54 g

:±10kV/µs (Min)
@VCM = 1500 V
l Switching Time : tpHL , tpLH = 0.1µs (Min)
= 0.8µs (Max)
@IF = 10 mA , VCC = 15 V , RL = 20 kΩ , Ta = 25°C
l Switching Time Dispersion : 0.7µs (Max)
(|tpLH−tpHL|)
l TTL Compatible
l UL Recognized : UL1577, File No. E67349

PIN CONFIGURATION(Top view) SCHEMATIC

1:N.C.
2:ANODE
3:CATHODE
4:N.C.
5:EMITTER
6:COLLECTOR SHIELD
7:N.C.
8:VCC

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 TLP559(IGM)
MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Forward Current (Note 1) IF 25 mA

Pulse Forward Current (Note 2) IFP 50 mA
LED

Peak Transient Forward Current (Note 3) IFPT 1 A

Reverse Voltage VR 5 V
Diode Power Dissipation (Note 4) PD 45 mW
Output Current IO 8 mA
DETECTOR

Peak Output Current IOP 16 mA

Output Voltage VO −0.5~20 V
Supply Voltage VCC −0.5~30 V
Output Power Dissipation (Note 5) PO 100 mW
Operating Temperature Range Topr −55~100 °C
Storage Temperature Range Tstg −55~125 °C
Lead Solder Temperature(10s) (Note 6) Tsol 260 °C
Isolation Voltage(AC,1min.,R.H.≤60%,Ta=25°C) (Note 7) BVS 2500 Vrms

(Note 1) Derate 0.5mA above 70°C.

(Note 2) 50% duty cycle,1ms pulse width.
Derate –1.0mA/°C above 70°C.
(Note 3) Pulse width PW≤1µs,300pps.
(Note 4) Derate 0.9mW/°C above 70°C.
(Note 5) Derate 2mW/°C above 70°C.
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considerd a two terminal device : pins1,2,3 and 4 shorted together and
pins5,6,7 and 8 shorted together.

℃)
ELECTRICAL CHARACTERISTICS (Ta = 25℃

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage VF IF = 16 mA ― 1.65 1.85 V

Forward Voltage
∆VF /∆Ta IF = 16 mA ― −2 ― mV /°C
Temperature Coefficient
LED

Reverse Current IR VR = 5 V ― ― 10 µA
Capacitance between Terminal CT V = 0, f = 1 MHz ― 45 ― pF
IOH (1) IF = 0 mA, VCC = VO = 5.5 V ― 3 500 nA
IF = 0 mA, VCC = 30 V
IOH (2) ― ― 5
High Level Output Current VO = 20 V
DETECTOR

µA
IF = 0 mA, VCC = 30 V
IOH ― ― 50
VO = 20 V, Ta = 70°C
High Level Supply Voltage ICCH IF = 0 mA, VCC = 30 V ― 0.01 1 µA
Supply Voltage VCC ICC = 0.01 mA 30 ― ― V
Output Voltage VO IO = 0.5 mA 20 ― ― V

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 TLP559(IGM)
℃)
COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25℃

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

IF = 10 mA, VCC = 4.5 V

25 35 75
VO = 0.4 V
Current Transfer Ratio I O / IF %
IF = 10 mA, VCC = 4.5 V
15 ― ―
VO = 0.4 V, Ta = −25~100°C
IF = 16 mA, VCC = 4.5 V
Low Level Output Voltage VOL ― ― 0.4 V
IO = 2.4 mA

℃)
ISOLATION CHARACTERISTICS (Ta = 25℃

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Capacitance Input to Output CS V = 0, f = 1 MHz ― 0.8 ― pF

10 14
Isolation Resistance RS R.H.≤60%, VS = 500 V 5×10 10 ― Ω
AC , 1minute 2500 ― ―
Vrms
Isolation Voltage BVS AC , 1second, in oil ― 5000 ―
DC , 1minute,in oil ― 5000 ― Vdc

℃、V
℃、 CC = 15 V)
SWITCHING CHARACTERISTICS (Ta = 25℃、
TEST
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
CUIT
IF = 10 mA, RL = 20 kΩ 0.1 0.45 0.8
Propagation Delay Time (H→L) IF = 10 mA, RL = 20 kΩ
tpHL 0.1 0.45 0.9
Ta = 0~85°C µs
tpLH
Propagation Delay Time (L→H)
IF = 10 mA, RL = 20 kΩ
0.1 0.45 1.0
Ta = −25~100°C
1
IF = 10 mA, RL = 20 kΩ ― 0.15 0.7
Switching Time IF = 10 mA, RL = 20 kΩ
― 0.25 0.8
Dispersion between ON |tpLH−tpHL| Ta = 0~85°C µs
and OFF
IF = 20 mA, RL = 20 kΩ
― 0.25 0.9
Ta = −25~100°C

Common Mode IF = 0 mA,

Transient Immunity at CMH VCM = 1500 Vp−p, 10000 15000 ― V /µs
Logic High Output (Note 8) RL = 20 kΩ
2
Common Mode IF =10 mA,
Transient Immunity at CML VCM = 1500 Vp−p, −10000 −15000 ― V /µs
Logic Low Output (Note 8) RL = 20 kΩ

(Note 8) CML is the maximum rate of fall of the common mode voltage that can be
sustained with the output voltage in the logic low state(Vo<1V).
CMH is the maximum rate of rise of the common mode voltage that can be
sustained with the output voltage in the logic high state(Vo>4V).
(Note 9) Maximum electrostatic discharge voltage for any pins : 100V(C=200pF,R=0)

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 TLP559(IGM)
TEST CIRCUIT 1 : Switching time test circuit

PULSE INPUT

PW=100µ
DUTY RATIO=1/10
IF MONITOR
OUTPUT
MONITOR

TEST CIRCUIT 2 : Common mode noise immunity test circuit

OUTPUT
MONITOR

PULSE GENERATOR

10mA

1200( V ) 1200( V )
CMH = 、CML =
t r ( ms ) t f ( ms )

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 TLP559(IGM)

RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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