LM 2734

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LM2734
SNVS288K – SEPTEMBER 2004 – REVISED SEPTEMBER 2018
LM2734 Thin SOT 1-A Load Step-Down DC/DC Regulator

1 Features 3 Description
•
1 Thin SOT-6 Package The LM2734 regulator is a monolithic, high-
frequency, PWM step-down DC/DC converter in a 6-
• 3-V to 20-V Input Voltage Range pin Thin SOT package. The device provides all the
• 0.8-V to 18-V Output Voltage Range active functions to provide local DC/DC conversion
• 1-A Output Current with fast transient response and accurate regulation
• 550-kHz (LM2734Y) and 1.6-MHz (LM2734X) in the smallest possible PCB area.
Switching Frequencies With a minimum of external components and online
• 300-mΩ NMOS Switch design support through WEBENCH, the LM2734
regulator is easy to use. The ability to drive 1-A loads
• 30-nA Shutdown Current with an internal 300-mΩ NMOS switch using state-of-
• 0.8-V, 2% Internal Voltage Reference the-art 0.5-µm BiCMOS technology results in the best
• Internal Soft Start power density available. The world-class control
• Current-Mode, PWM Operation circuitry allows for on-times as low as 13 ns, thus
supporting exceptionally high-frequency conversion
• Thermal Shutdown over the entire 3-V to 20-V input operating range
• Create a Custom Design Using the LM2734 With down to the minimum output voltage of 0.8 V.
WEBENCH® Power Designer Switching frequency is internally set to 550 kHz
(LM2734Y) or 1.6 MHz (LM2734X), allowing the use
2 Applications of extremely small surface-mount inductors and chip
capacitors. Even though the operating frequencies
• Local Point-of-Load Regulation are very high, efficiencies up to 90% are easy to
• Core Power in HDDs achieve. External shutdown is included, featuring an
• Set-Top Boxes ultra-low standby current of 30 nA.
• Battery-Powered Devices The LM2734 regulator uses current-mode control and
• USB Powered Devices internal compensation to provide high-performance
regulation over a wide range of operating conditions.
• DSL Modems Additional features include internal soft-start circuitry
• Notebook Computers to reduce inrush current, pulse-by-pulse current limit,
thermal shutdown, and output overvoltage protection.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM2734 SOT (6) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Typical Application Circuit
Efficiency vs Load Current
VIN = 5 V, VOUT = 3.3 V
D2
VIN VIN BOOST
C3
C1 L1
SW VOUT
ON
LM2734
D1
C2
EN
OFF R1
FB
GND R2
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM2734
SNVS288K – SEPTEMBER 2004 – REVISED SEPTEMBER 2018 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 11
2 Applications ........................................................... 1 8.1 Application Information............................................ 11
3 Description ............................................................. 1 8.2 Typical Applications ................................................ 14
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 29
5 Pin Configuration and Functions ......................... 3 10 Layout................................................................... 29
6 Specifications......................................................... 4 10.1 Layout Guidelines ................................................. 29
6.1 Absolute Maximum Ratings ...................................... 4 10.2 Layout Example .................................................... 30
6.2 ESD Ratings.............................................................. 4 11 Device and Documentation Support ................. 31
6.3 Recommended Operating Conditions....................... 4 11.1 Development Support .......................................... 31
6.4 Thermal Information .................................................. 4 11.2 Receiving Notification of Documentation Updates 31
6.5 Electrical Characteristics........................................... 5 11.3 Community Resources.......................................... 31
6.6 Typical Characteristics .............................................. 6 11.4 Third-Party Products Disclaimer ........................... 31
7 Detailed Description .............................................. 8 11.5 Trademarks ........................................................... 31
7.1 Overview ................................................................... 8 11.6 Electrostatic Discharge Caution ............................ 31
7.2 Functional Block Diagram ......................................... 9 11.7 Glossary ................................................................ 32
7.3 Feature Description................................................... 9 12 Mechanical, Packaging, and Orderable
7.4 Device Functional Modes........................................ 10 Information ........................................................... 32
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision J (December 2014) to Revision K Page
• Deleted automotive content and moved to separate data sheet SNVSB80 ......................................................................... 1
• Added links for Webench ....................................................................................................................................................... 1
• Changed Abs Max FB voltage max. from "-0.3 V" to "3 V" .................................................................................................... 4
Changes from Revision I (April 2013) to Revision J Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
2 Submit Documentation Feedback Copyright © 2004–2018, Texas Instruments Incorporated
Product Folder Links: LM2734

LM2734
www.ti.com SNVS288K – SEPTEMBER 2004 – REVISED SEPTEMBER 2018
5 Pin Configuration and Functions
DDC Package
6-Pin SOT-23-THIN
Top View
BOOST 1 6 SW
GND 2 5 VIN
FB 3 4 EN
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is
BOOST 1 I
connected between the BOOST and SW pins.
Signal and Power ground pin. Place the bottom resistor of the feedback network as close as
GND 2 GND
possible to this pin for accurate regulation.
FB 3 I Feedback pin. Connect FB to the external resistor divider to set output voltage.
Enable control input. Logic high enables operation. Do not allow this pin to float or be greater
EN 4 I
than VIN + 0.3 V.
VIN 5 I Input supply voltage. Connect a bypass capacitor to this pin.
SW 6 O Output switch. Connects to the inductor, catch diode, and bootstrap capacitor.
Copyright © 2004–2018, Texas Instruments Incorporated Submit Documentation Feedback 3

LM2734
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature (unless otherwise noted) (1) (2)
MIN MAX UNIT
VIN –0.5 24 V
SW voltage –0.5 24 V
Boost voltage –0.5 30 V
Boost to SW voltage –0.5 6 V
FB voltage –0.5 3 V
EN voltage –0.5 VIN + 0.3 V
Junction temperature 150 °C
Soldering information reflow peak pkg. temp.(15s) 260 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
6.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN 3 20 V
SW voltage -0.5 20 V
Boost voltage -0.5 25 V
Boost to SW voltage 1.6 5.5 V
Junction temperature −40 125 °C
6.4 Thermal Information

LM2734
THERMAL METRIC (1) DDC (SOT-23-THIN) UNIT
6 PINS
RθJA Junction-to-ambient thermal resistance 158.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 46.5 °C/W
RθJB Junction-to-board thermal resistance 29.5 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 29.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

LM2734
6.5 Electrical Characteristics

VIN = 5V, VBOOST - VSW = 5V unless otherwise specified. Datasheet min/max specification limits are ensured by design, test, or
statistical analysis.
TJ = 25°C TJ = -40°C to 125°C
PARAMETER TEST CONDITIONS UNIT
MIN (1) TYP (2) MAX (1) MIN TYP MAX
VFB Feedback Voltage 0.800 0.784 0.816 V
ΔVFB/Δ Feedback Voltage Line VIN = 3V to 20V
0.01 %/V
VIN Regulation
Feedback Input Bias Sink/Source
IFB 10 250 nA
Current
Undervoltage Lockout VIN Rising 2.74 2.90
UVLO Undervoltage Lockout VIN Falling 2.3 2 V
UVLO Hysteresis 0.44 0.30 0.62
LM2734X 1.6 1.2 1.9
FSW Switching Frequency MHz
LM2734Y 0.55 0.40 0.66
LM2734X 92 85%
DMAX Maximum Duty Cycle
LM2734Y 96 90%
LM2734X 2%
DMIN Minimum Duty Cycle
LM2734Y 1%
RDS(ON) Switch ON Resistance VBOOST - VSW = 3V 300 600 mΩ
ICL Switch Current Limit VBOOST - VSW = 3V 1.7 1.2 2.5 A
Quiescent Current Switching 1.5 2.5 mA
IQ Quiescent Current VEN = 0V
30 nA
(shutdown)
LM2734X (50% Duty
2.5 3.5
Cycle)
IBOOST Boost Pin Current mA
LM2734Y (50% Duty
1.0 1.8
Cycle)
Shutdown Threshold VEN Falling
0.4
Voltage
VEN_TH V
Enable Threshold VEN Rising 1.8
Voltage
IEN Enable Pin Current Sink/Source 10 nA
ISW Switch Leakage 40 nA
(1) Specified to Average Outgoing Quality Level (AOQL).

(2) Typicals represent the most likely parametric norm.

LM2734
6.6 Typical Characteristics

All curves taken at VIN = 5 V, VBOOST – VSW = 5 V and TA = 25°C, unless specified otherwise.
Figure 1. Oscillator Frequency vs Temperature - L1 = 4.7 µH Figure 2. Oscillator Frequency vs Temperature - L1 = 10 μH
Figure 3. Current Limit vs Temperature Figure 4. Current Limit vs Temperature

VIN = 20 V
Figure 5. VFB vs Temperature Figure 6. RDSON vs Temperature

LM2734
Typical Characteristics (continued)

All curves taken at VIN = 5 V, VBOOST – VSW = 5 V and TA = 25°C, unless specified otherwise.
Figure 7. IQ Switching vs Temperature Figure 8. Line Regulation - L1 = 4.7 µH

VOUT = 1.5 V, IOUT = 500 mA
Figure 9. Line Regulation - L1 = 10 μH Figure 10. Line Regulation - L1 = 4.7 µH

VOUT = 1.5 V, IOUT = 500 mA VOUT = 3.3 V, IOUT = 500 mA
Figure 11. Line Regulation - L1 = 10 μH

VOUT = 3.3 V, IOUT = 500 mA

LM2734
7 Detailed Description
7.1 Overview
The LM2734 device is a constant frequency PWM buck regulator IC that delivers a 1-A load current. The
regulator has a preset switching frequency of either 550 kHz (LM2734Y) or 1.6 MHz (LM2734X). These high
frequencies allow the LM2734 device to operate with small surface-mount capacitors and inductors, resulting in
DC/DC converters that require a minimum amount of board space. The LM2734 device is internally
compensated, so it is simple to use, and requires few external components. The LM2734 device uses current-
mode control to regulate the output voltage.
The following operating description of theLM2734 device will refer to the Simplified Block Diagram () and to the
waveforms in Figure 12. The LM2734 device supplies a regulated output voltage by switching the internal NMOS
control switch at constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the
reset pulse generated by the internal oscillator. When this pulse goes low, the output control logic turns on the
internal NMOS control switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and
the inductor current (IL) increases with a linear slope. IL is measured by the current-sense amplifier, which
generates an output proportional to the switch current. The sense signal is summed with the regulator’s
corrective ramp and compared to the error amplifier’s output, which is proportional to the difference between the
feedback voltage and VREF. When the PWM comparator output goes high, the output switch turns off until the
next switching cycle begins. During the switch off-time, inductor current discharges through Schottky diode D1,
which forces the SW pin to swing below ground by the forward voltage (VD) of the catch diode. The regulator
loop adjusts the duty cycle (D) to maintain a constant output voltage.
VSW
D = TON/TSW
VIN
SW
Voltage
TON TOFF
0
VD t
TSW
IL
IPK
Inductor
Current
0 t
Figure 12. LM2734 Waveforms of SW Pin Voltage and Inductor Current

LM2734
7.2 Functional Block Diagram
VIN
VIN
Current-Sense Amplifier
Internal RSENSE
+
EN Regulator
ON - CIN
and D2
Enable
OFF Circuit Thermal
Shutdown BOOST
VBOOST
Under
Voltage 0.3: CBOOST
Lockout Output Driver
Current Control Switch SW VSW L
Limit Logic VOUT
OVP IL
Oscillator Comparator D
Reset 1 COUT
Pulse - 0.88V
+ +
PWM - R
- Comparator 1
ISENSE
+
FB
+ -
Internal
+ Error Compensation +
R
Corrective Ramp Signal + VREF 2
Error Amplifier - 0.8V
GND
7.3 Feature Description

7.3.1 Output Overvoltage Protection
The overvoltage comparator compares the FB pin voltage to a voltage that is 10% higher than the internal
reference Vref. Once the FB pin voltage goes 10% above the internal reference, the internal NMOS control
switch is turned off, which allows the output voltage to decrease toward regulation.
7.3.2 Undervoltage Lockout

Undervoltage lockout (UVLO) prevents the LM2734 from operating until the input voltage exceeds 2.74 V
(typical).
The UVLO threshold has approximately 440 mV of hysteresis, so the part will operate until VIN drops below 2.3 V
(typical). Hysteresis prevents the part from turning off during power up if VIN is nonmonotonic.
7.3.3 Current Limit

The LM2734 uses cycle-by-cycle current limiting to protect the output switch. During each switching cycle, a
current limit comparator detects if the output switch current exceeds 1.7 A (typical), and turns off the switch until
the next switching cycle begins.
7.3.4 Thermal Shutdown

Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature
exceeds 165°C. After thermal shutdown occurs, the output switch does not turn on until the junction temperature
drops to approximately 150°C.

LM2734
7.4 Device Functional Modes

7.4.1 Enable Pin / Shutdown Mode
The LM2734 has a shutdown mode that is controlled by the enable pin (EN). When a logic low voltage is applied
to EN, the part is in shutdown mode and its quiescent current drops to typically 30 nA. Switch leakage adds
another 40 nA from the input supply. The voltage at this pin must never exceed VIN + 0.3 V.
7.4.2 Soft Start

This function forces VOUT to increase at a controlled rate during start up. During soft start, the error amplifier’s
reference voltage ramps from 0 V to its nominal value of 0.8 V in approximately 200 µs. This forces the regulator
output to ramp up in a more linear and controlled fashion, which helps reduce inrush current. Under some
circumstances at start-up, an output voltage overshoot may still be observed. This may be due to a large output
load applied during start-up. Large amounts of output external capacitance can also increase output voltage
overshoot. A simple solution is to add a feed forward capacitor with a value between 470 pf and 1000 pf across
the top feedback resistor (R1). See Figure 23 for further detail.

LM2734
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information

8.1.1 Boost Function
Capacitor CBOOST and diode D2 in Figure 13 are used to generate a voltage VBOOST. VBOOST - VSW is the gate
drive voltage to the internal NMOS control switch. To properly drive the internal NMOS switch during its on-time,
VBOOST needs to be at least 1.6 V greater than VSW. Although the LM2734 device will operate with this minimum
voltage, it may not have sufficient gate drive to supply large values of output current. Therefore, it is
recommended that VBOOST be greater than 2.5 V above VSW for best efficiency. VBOOST – VSW should not exceed
the maximum operating limit of 5.5 V.
5.5 V > VBOOST – VSW > 2.5 V for best performance.
VBOOST
D2
VIN VIN BOOST
CIN LM2734 CBOOST

L
SW VOUT
GND
D1 COUT
Figure 13. VOUT Charges CBOOST
When the LM2734 device starts up, internal circuitry from the BOOST pin supplies a maximum of 20 mA to
CBOOST. This current charges CBOOST to a voltage sufficient to turn the switch on. The BOOST pin continues to
source current to CBOOST until the voltage at the feedback pin is greater than 0.76 V.
There are various methods to derive VBOOST:
1. From the input voltage (VIN)
2. From the output voltage (VOUT)
3. From an external distributed voltage rail (VEXT)
4. From a shunt or series Zener diode
In the simplified block diagram of Functional Block Diagram, capacitor CBOOST and diode D2 supply the gate-
drive current for the NMOS switch. Capacitor CBOOST is charged via diode D2 by VIN. During a normal switching
cycle, when the internal NMOS control switch is off (TOFF) (refer to Figure 12), VBOOST equals VIN minus the
forward voltage of D2 (VFD2), during which the current in the inductor (L) forward biases the Schottky diode D1
(VFD1). Therefore, the voltage stored across CBOOST is:
VBOOST - VSW = VIN - VFD2 + VFD1 (1)
When the NMOS switch turns on (TON), the switch pin rises to:
VSW = VIN – (RDSON × IL), (2)
forcing VBOOST to rise thus reverse biasing D2. The voltage at VBOOST is then:
VBOOST = 2 VIN – (RDSON × IL) – VFD2 + VFD1 (3)
which is approximately:
2VIN – 0.4 V (4)

LM2734
Application Information (continued)

for many applications. Thus the gate-drive voltage of the NMOS switch is approximately:
VIN – 0.2 V (5)
An alternate method for charging CBOOST is to connect D2 to the output as shown in Figure 13. The output
voltage should be from 2.5 V and 5.5 V, so that proper gate voltage will be applied to the internal switch. In this
circuit, CBOOST provides a gate drive voltage that is slightly less than VOUT.
In applications where both VIN and VOUT are greater than 5.5 V, or less than 3 V, CBOOST cannot be charged
directly from these voltages. If VIN to VOUT are greater than 5.5 V, CBOOST can be charged from VIN or VOUT minus
a Zener voltage by placing a Zener diode D3 in series with D2, as shown in Figure 14. When using a series
Zener diode from the input, ensure that the regulation of the input supply does not create a voltage that falls
outside the recommended VBOOST voltage.
(VINMAX – VD3) < 5.5 V (6)
(VINMIN – VD3) > 1.6 V (7)
D2
D3
VIN VIN BOOST VBOOST
CIN LM2734 CBOOST

L
SW VOUT
GND
D1 C OUT
Figure 14. Zener Reduces Boost Voltage from VIN
An alternative method is to place the Zener diode D3 in a shunt configuration as shown in Figure 15. A small 350
mW to 500 mW 5.1-V Zener diode in a SOT or SOD package can be used for this purpose. A small ceramic
capacitor such as a 6.3 V, 0.1-µF capacitor (C4) should be placed in parallel with the Zener diode. When the
internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capacitance. The
0.1-µF parallel shunt capacitor ensures that the VBOOST voltage is maintained during this time.
Resistor R3 should be chosen to provide enough RMS current to the Zener diode (D3) and to the BOOST pin. A
recommended choice for the Zener current (IZENER) is 1 mA. The current IBOOST into the BOOST pin supplies the
gate current of the NMOS control switch and varies typically according to the following formula for the X version:
IBOOST = 0.56 × (D + 0.54) × (VZENER – VD2) mA (8)
IBOOST can be calculated for the Y version using the following:
IBOOST = 0.22 × (D + 0.54) × (VZENER – VD2) µA (9)
where D is the duty cycle, VZENER and VD2 are in volts, and IBOOST is in milliamps. VZENER is the voltage applied to
the anode of the boost diode (D2), and VD2 is the average forward voltage across D2. Note that this formula for
IBOOST gives typical current. For the worst case IBOOST, increase the current by 40%. In that case, the worst case
boost current will be:
IBOOST-MAX = 1.4 × IBOOST (10)
R3 will then be given by:
R3 = (VIN – VZENER) / (1.4 × IBOOST + IZENER) (11)
For example, using the X-version let VIN = 10 V, VZENER = 5 V, VD2 = 0.7 V, IZENER = 1 mA, and duty cycle D =
50%. Then:
IBOOST = 0.56 × (0.5 + 0.54) × (5 - 0.7) mA = 2.5 mA (12)
R3 = (10 V – 5 V) / (1.4 × 2.5 mA + 1 mA) = 1.11 kΩ (13)

LM2734
Application Information (continued)
VZ
C4 D3 D2
R3
VIN VIN BOOST VBOOST
C IN LM2734 CBOOST
L
SW VOUT
GND
D1 COUT
Figure 15. Boost Voltage Supplied from the Shunt Zener on VIN

LM2734
8.2 Typical Applications

8.2.1 LM2734X (1.6 MHz) VBOOST Derived from VIN 5V to 1.5 V/1 A
D2
VIN VIN BOOST
C3
L1
C1 R3
SW VOUT
LM2734
ON D1
C2
EN
OFF R1
FB
GND
R2
Figure 16. LM2734X (1.6 MHz) VBOOST Derived from VIN 5 V to 1.5-V/1-A Schematic
8.2.1.1 Design Requirements

Derive charge for VBOOST from the input supply (VIN ). VBOOST – VSW should not exceed the maximum operating
limit of 5.5V.
8.2.1.2 Detailed Design Procedure
Table 1. Bill of Materials for Figure 16

PART ID PART VALUE MANUFACTURER PART NUMBER
U1 1-A Buck Regulator Texas Instruments LM2734X
C1, Input Cap 10 µF, 6.3V, X5R TDK C3216X5ROJ106M
C2, Output Cap 10 µF, 6.3V, X5R TDK C3216X5ROJ106M
C3, Boost Cap 0.01 uF, 16V, X7R TDK C1005X7R1C103K
D1, Catch Diode 0.3 VF Schottky 1 A, 10 VR ON Semi MBRM110L
D2, Boost Diode 1VF @ 50-mA Diode Diodes, Inc. 1N4148W
L1 4.7µH, 1.7A, TDK VLCF4020T- 4R7N1R2
R1 8.87 kΩ, 1% Vishay CRCW06038871F
R3 100 kΩ, 1% Vishay CRCW06031003F
8.2.1.2.1 Custom Design With WEBENCH® Tools

Click here to create a custom design using the LM2734 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.

LM2734
8.2.1.2.2 Inductor Selection

The Duty Cycle (D) can be approximated quickly using the ratio of output voltage (VO) to input voltage (VIN):
VO
D=
VIN
(14)
The catch diode (D1) forward voltage drop and the voltage drop across the internal NMOS must be included to
calculate a more accurate duty cycle. Calculate D by using the following formula:
VO + VD
D=
VIN + VD - VSW
(15)
VSW can be approximated by:
VSW = IO x RDS(ON) (16)
The diode forward drop (VD) can range from 0.3 V to 0.7 V depending on the quality of the diode. The lower VD
is, the higher the operating efficiency of the converter.
The inductor value determines the output ripple current. Lower inductor values decrease the size of the inductor,
but increase the output ripple current. An increase in the inductor value will decrease the output ripple current.
The ratio of ripple current (ΔiL) to output current (IO) is optimized when it is set between 0.3 and 0.4 at 1 A. The
ratio r is defined as:
'iL
r=
lO
(17)
One must also ensure that the minimum current limit (1.2 A) is not exceeded, so the peak current in the inductor
must be calculated. The peak current (ILPK) in the inductor is calculated as shown in Equation 18:
ILPK = IO + ΔIL/2 (18)
If r = 0.5 at an output of 1 A, the peak current in the inductor will be 1.25 A. The minimum specified current limit
over all operating conditions is 1.2 A. One can either reduce r to 0.4 resulting in a 1.2-A peak current, or make
the engineering judgement that 50 mA over is safe enough with a 1.7-A typical current limit and 6 sigma limits.
When the designed maximum output current is reduced, the ratio r can be increased. At a current of 0.1 A, r can
be made as high as 0.9. The ripple ratio can be increased at lighter loads because the net ripple is actually quite
low, and if r remains constant the inductor value can be made quite large. An equation empirically developed for
the maximum ripple ratio at any current less than 2 A is:
r = 0.387 x IOUT-0.3667 (19)
Note that this is just a guideline.
The LM2734 operates at frequencies allowing the use of ceramic output capacitors without compromising
transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple.
See Output Capacitor for more details on calculating output voltage ripple.
Now that the ripple current or ripple ratio is determined, the inductance is calculated as shown in Equation 20:
VO + VD
L= x (1-D)
IO x r x fS
where
• fs is the switching frequency
• IO is the output current. (20)
When selecting an inductor, make sure that it is capable of supporting the peak output current without saturating.
Inductor saturation will result in a sudden reduction in inductance and prevent the regulator from operating
correctly. Because of the speed of the internal current limit, it necessary to specify the peak current of the
inductor only for the required maximum output current. For example, if the designed maximum output current is
0.5 A and the peak current is 0.7 A, then the inductor should be specified with a saturation current limit of >0.7 A.

LM2734
There is no need to specify the saturation or peak current of the inductor at the 1.7-A typical switch current limit.
The difference in inductor size is a factor of 5. Because of the operating frequency of the LM2734, ferrite based
inductors are preferred to minimize core losses. This presents little restriction because the variety of ferrite based
inductors is huge. Lastly, inductors with lower series resistance (DCR) will provide better operating efficiency. For
recommended inductors see example circuits.
8.2.1.2.3 Input Capacitor

An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The
primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and ESL (Equivalent
Series Inductance). The recommended input capacitance is 10 µF, although 4.7 µF is sufficient for input voltages
below 6 V. The input voltage rating is specifically stated by the capacitor manufacturer. Make sure to check any
recommended deratings and also verify if there is any significant change in capacitance at the operating input
voltage and the operating temperature. The input capacitor maximum RMS input current rating (IRMS-IN) must be
greater than:
IRMS-IN = IO x r2
D x 1-D +
12 (21)
From Equation 21 from the above equation that maximum RMS capacitor current occurs when D = 0.5. Always
calculate the RMS at the point where the duty cycle, D, is closest to 0.5. The ESL of an input capacitor is usually
determined by the effective cross sectional area of the current path. A large leaded capacitor will have high ESL
and a 0805 ceramic chip capacitor will have very low ESL. At the operating frequencies of the LM2734 device,
certain capacitors may have an ESL so large that the resulting impedance (2πfL) will be higher than that required
to provide stable operation. As a result, surface-mount capacitors are strongly recommended. Sanyo POSCAP,
Tantalum or Niobium, Panasonic SP or Cornell Dubilier ESR, and multilayer ceramic capacitors (MLCC) are all
good choices for both input and output capacitors and have very low ESL. For MLCCs it is recommended to use
X7R or X5R dielectrics. Consult the capacitor manufacturer data sheet to see how rated capacitance varies over
operating conditions.
8.2.1.2.4 Output Capacitor

The output capacitor is selected based upon the desired output ripple and transient response. The initial current
of a load transient is provided mainly by the output capacitor. The output ripple of the converter is:
1
'VO = 'iL x (RESR + )
8 x fS x CO
(22)
When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the
output ripple will be approximately sinusoidal and 90° phase shifted from the switching action. Given the
availability and quality of MLCCs and the expected output voltage of designs using the LM2734 device, there is
really no need to review any other capacitor technologies. Another benefit of ceramic capacitors is their ability to
bypass high frequency noise. A certain amount of switching edge noise will couple through parasitic
capacitances in the inductor to the output. A ceramic capacitor will bypass this noise while a tantalum will not.
Because the output capacitor is one of the two external components that control the stability of the regulator
control loop, most applications will require a minimum at 10 µF of output capacitance. Capacitance can be
increased significantly with little detriment to the regulator stability. Like the input capacitor, recommended
multilayer ceramic capacitors are X7R or X5R. Again, verify actual capacitance at the desired operating voltage
and temperature.
Check the RMS current rating of the capacitor. The RMS current rating of the capacitor chosen must also meet
the following condition:
r
IRMS-OUT = IO x
12 (23)
8.2.1.2.5 Catch Diode

The catch diode (D1) conducts during the switch off-time. A Schottky diode is recommended for its fast switching
times and low forward voltage drop. The catch diode should be chosen so that its current rating is greater than:
ID1 = IO x (1-D) (24)

LM2734
The reverse breakdown rating of the diode must be at least the maximum input voltage plus appropriate margin.
To improve efficiency choose a Schottky diode with a low forward voltage drop.
8.2.1.2.6 Boost Diode

A standard diode such as the 1N4148 type is recommended. For VBOOST circuits derived from voltages less than
3.3 V, a small-signal Schottky diode is recommended for greater efficiency. A good choice is the BAT54 small
signal diode.
8.2.1.2.7 Boost Capacitor

A ceramic 0.01-µF capacitor with a voltage rating of at least 16 V is sufficient. The X7R and X5R MLCCs provide
the best performance.

LM2734
8.2.1.2.8 Output Voltage

The output voltage is set using the following equation where R2 is connected between the FB pin and GND, and
R1 is connected between VO and the FB pin. A good value for R2 is 10 kΩ.
VO
R1 = - 1 x R2
VREF
(25)
8.2.1.3 Application Curves
Figure 17. Efficiency vs Load Current - L1 = 4.7 µH VOUT = Figure 18. Efficiency vs Load Current - L1 = 10 μH VOUT = 5
5V V
Figure 19. Efficiency vs Load Current - L1 = 4.7 µH VOUT = Figure 20. Efficiency vs Load Current - L1 = 10 μH VOUT =
3.3 V 3.3 V

LM2734
Figure 21. Efficiency vs Load Current - L1 = 4.7 µH VOUT = Figure 22. Efficiency vs Load Current - L1 = 10 μH VOUT =
1.5 V 1.5 V

LM2734
8.2.2 LM2734X (1.6 MHz) VBOOST Derived from VOUT 12 V to 3.3 V /1 A
D2
VIN 12V BOOST
VIN
C3 L1
C1 VOUT
R3 SW 3.3V
LM2734
D1
ON C2
EN R1
CFF
OFF
FB
GND R2
Figure 23. LM2734X (1.6 MHz) VBOOST Derived from VOUT 12 V to 3.3 V /1-A Schematic

Derive charge for VBOOST from the output voltage, (VOUT). The output voltage should be between 2.5 V and 5.5 V.

See Detailed Design Procedure.

C1, Input Cap 10 µF, 25 V, X7R TDK C3225X7R1E106M
C2, Output Cap 22 µF, 6.3 V, X5R TDK C3216X5ROJ226M
C3, Boost Cap 0.01 µF, 16 V, X7R TDK C1005X7R1C103K
CFF 1000 pF 25 V TDK C0603X5R1E102K
D1, Catch Diode 0.34 VF Schottky 1 A, 30 VR Vishay SS1P3L
D2, Boost Diode 1 VF @ 50-mA Diode Diodes, Inc. 1N4148W
L1 4.7µH, 1.7 A TDK VLCF4020T- 4R7N1R2

See Application Curves.

LM2734
8.2.3 LM2734X (1.6 MHz) VBOOST Derived from VSHUNT 18 V to 1.5 V /1 A
C4 D3
R4
D2
VIN VIN BOOST
C3
L1
C1 R3
SW VOUT
LM2734
ON D1 C2
EN
OFF R1
FB
GND
R2
Figure 24. LM2734X (1.6 MHz) VBOOST Derived from VSHUNT 18 V to 1.5 V /1-A Schematic

An alternative method when VIN is greater than 5.5 V is to place the zener diode D3 in a shunt configuration. A
small 350 mW to 500 mW 5.1 V zener in a SOT or SOD package can be used for this purpose. A small ceramic
capacitor such as a 6.3 V, 0.1 μF capacitor (C4) should be placed in parallel with the zener diode. When the
0.1 μF parallel shunt capacitor ensures that the VBOOST voltage is maintained during this time.


C4, Shunt Cap 0.1 µF, 6.3 V, X5R TDK C1005X5R0J104K
D3, Zener Diode 5.1 V 250 Mw SOT Vishay BZX84C5V1
L1 6.8 µH, 1.6 A, TDK SLF7032T-6R8M1R6


LM2734
8.2.4 LM2734X (1.6 MHz) VBOOST Derived from Series Zener Diode (VIN) 15 V to 1.5 V / 1 A
D3 D2
VIN VIN BOOST
C3
C1 L1
R3
SW VOUT
LM2734
ON D1
C2
EN
OFF R1
FB
GND
R2
Figure 25. LM2734X (1.6 MHz) VBOOST Derived from Series Zener Diode (VIN) 15 V to 1.5 V / 1-A Schematic

directly from these voltages. If VIN is greater than 5.5 V, CBOOST can be charged from VIN minus a zener voltage
by placing a zener diode D3 in series with D2. When using a series zener diode from the input, ensure that the
regulation of the input supply doesn’t create a voltage that falls outside the recommended VBOOST voltage.
(VINMAX – VD3) < 5.5 V (26)
(VINMIN – VD3) > 1.6 V (27)


C1, Input Cap 10 µF, 25V, X7R TDK C3225X7R1E106M
D3, Zener Diode 11 V 350 Mw SOT Diodes, Inc. BZX84C11T
L1 6.8 µH, 1.6 A, TDK SLF7032T-6R8M1R6


LM2734
8.2.5 LM2734X (1.6 MHz) VBOOST Derived from Series Zener Diode (VOUT) 15 V to 9 V /1 A
D2 D3
VIN VIN BOOST
C3
L1
C1 R3
SW VOUT
LM2734
ON D1
C2
EN
OFF R1
FB
GND
R2
Figure 26. LM2734X (1.6 MHz) VBOOST Derived from Series Zener Diode (VOUT) 15 V to 9 V /1-A Schematic

directly from these voltages. If VIN and VOUT are greater than 5.5 V, CBOOST can be charged from VOUT minus a
zener voltage by placing a zener diode D3 in series with D2.


C2, Output Cap 22 µF, 16 V, X5R TDK C3216X5R1C226M
D3, Zener Diode 4.3 V 350-mw SOT Diodes, Inc. BZX84C4V3
L1 6.8 µH, 1.6 A, TDK SLF7032T-6R8M1R6


LM2734
8.2.6 LM2734Y (550 kHz) VBOOST Derived from VIN 5 V to 1.5 V / 1 A
D2
VIN VIN BOOST
C3
L1
C1 R3
SW VOUT
LM2734
ON D1
C2
EN
OFF R1
FB
GND
R2
Figure 27. LM2734Y (550 kHz) VBOOST Derived from VIN 5 V to 1.5 V / 1-A Schematic

Derive charge for VBOOST from the input supply (VIN ). VBOOST – VSW should not exceed the maximum operating
limit of 5.5 V.


U1 1-A Buck Regulator Texas Instruments LM2734Y
C1, Input Cap 10 µF, 6.3 V, X5R TDK C3216X5ROJ106M
D1, Catch Diode 0.3 VF Schottky 1 A, 10 VR ON Semi MBRM110L
L1 10 µH, 1.6 A, TDK SLF7032T-100M1R4


LM2734
8.2.7 LM2734Y (550 kHz) VBOOST Derived from VOUT 12 V to 3.3 V / 1 A
D2
VIN 12V BOOST
VIN
C3 L1
C1 VOUT
R3 SW 3.3V
LM2734
D1
ON C2
EN R1
CFF
OFF
FB
GND R2
Figure 28. LM2734Y (550 kHz) VBOOST Derived from VOUT 12 V to 3.3 V / 1 A Schematic

Derive charge for VBOOST from the output voltage, (VOUT ). The output voltage should be between 2.5 V and 5.5
V.


D1, Catch Diode 0.34 VF Schottky 1 A, 30VR Vishay SS1P3L
D2, Boost Diode 0.6 VF @ 30-mA Diode Vishay BAT17
L1 10 µH, 1.6 A TDK SLF7032T-100M1R4


LM2734
8.2.8 LM2734Y (550 kHz) VBOOST Derived from VSHUNT 18 V to 1.5 V / 1 A
C4 D3
R4
D2
VIN VIN BOOST
C3
L1
C1 R3
SW VOUT
LM2734
ON D1 C2
EN
OFF R1
FB
GND
R2
Figure 29. LM2734Y (550 kHz) VBOOST Derived from VSHUNT 18 V to 1.5 V / 1-A

An alternative method when VIN is greater than 5.5 V is to place the zener diode D3 in a shunt configuration. A
small 350 mW to 500 mW 5.1 V zener in a SOT or SOD package can be used for this purpose. A small ceramic
capacitor such as a 6.3 V, 0.1 μF capacitor (C4) should be placed in parallel with the zener diode. When the
0.1 μF parallel shunt capacitor ensures that the VBOOST voltage is maintained during this time.


C4, Shunt Cap 0.1 µF, 6.3 V, X5R TDK C1005X5R0J104K
D1, Catch Diode 0.4 VF Schottky 1 A, 30VR Vishay SS1P3L
D3, Zener Diode 5.1 V 250 Mw SOT Vishay BZX84C5V1
L1 15 µH, 1.5 A TDK SLF7045T-150M1R5


LM2734
8.2.9 LM2734Y (550 kHz) VBOOST Derived from Series Zener Diode (VIN) 15 V to 1.5 V / 1 A
D3 D2
VIN VIN BOOST
C3
C1 L1
R3
SW VOUT
LM2734
ON D1
C2
EN
OFF R1
FB
GND
R2
Figure 30. LM2734Y (550 kHz) VBOOST Derived from Series Zener Diode (VIN) 15 V to 1.5 V / 1-A Schematic

directly from these voltages. If VIN is greater than 5.5 V, CBOOST can be charged from VIN minus a zener voltage
by placing a zener diode D3 in series with D2. When using a series zener diode from the input, ensure that the
regulation of the input supply doesn’t create a voltage that falls outside the recommended VBOOST voltage.
(VINMAX – VD3) < 5.5 V (28)
(VINMIN – VD3) > 1.6 V (29)


D3, Zener Diode 11 V 350 Mw SOT Diodes, Inc. BZX84C11T
L1 15 µH, 1.5 A, TDK SLF7045T-150M1R5


LM2734
8.2.10 LM2734Y (550 kHz) VBOOST Derived from Series Zener Diode (VOUT) 15 V to 9 V / 1 A
D2 D3
VIN VIN BOOST
C3
L1
C1 R3
SW VOUT
LM2734
ON D1
C2
EN
OFF R1
FB
GND
R2
Figure 31. LM2734Y (550 kHz) VBOOST Derived from Series Zener Diode (VOUT) 15 V to 9 V / 1-A

directly from these voltages. If VIN and VOUT are greater than 5.5 V, CBOOST can be charged from VOUT minus a
zener voltage by placing a zener diode D3 in series with D2.


C2, Output Cap 22 µF, 16 V, X5R TDK C3216X5R1C226M
C3, Boost Cap 0.0 1 µF, 16 V, X7R TDK C1005X7R1C103K
D3, Zener Diode 4.3 V 350 Mw SOT Diodes, Inc. BZX84C4V3
L1 22 µH, 1.4 A, TDK SLF7045T-220M1R3-1PF
R2 10.2kΩ, 1% Vishay CRCW06031022F
R3 100kΩ, 1% Vishay CRCW06031003F


LM2734
9 Power Supply Recommendations

Input voltage is rated as 3 V to 18 V; however, care must be taken in certain circuit configurations (for example,
VBOOST derived from VIN where the requirement that VBOOST – VSW < 5.5 V should be observed) Also, for best
efficiency VBOOST should be at least 2.5-V above VSW.
The voltage on the Enable pin should not exceed VIN by more than 0.3 V.
10 Layout
10.1 Layout Guidelines

When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The
most important consideration when completing the layout is the close coupling of the GND connections of the CIN
capacitor and the catch diode D1. These ground ends should be close to one another and be connected to the
GND plane with at least two through-holes. Place these components as close to the IC as possible. Next in
importance is the location of the GND connection of the COUT capacitor, which should be near the GND
connections of CIN and D1.
There should be a continuous ground plane on the bottom layer of a two-layer board except under the switching
node island.
The FB pin is a high-impedance node — take care to make the FB trace short to avoid noise pickup and
inaccurate regulation. The feedback resistors should be placed as close as possible to the IC, with the GND of
R2 placed as close as possible to the GND of the IC. The VOUT trace to R1 should be routed away from the
inductor and any other traces that are switching.
High AC currents flow through the VIN, SW and VOUT traces, so they should be as short and wide as possible.
However, making the traces wide increases radiated noise, so the designer must make this trade-off. Radiated
noise can be decreased by choosing a shielded inductor.
The remaining components should also be placed as close as possible to the IC. See Application Note AN-1229
(SNVA054) for further considerations and the LM2734 demo board as an example of a four-layer layout.

LM2734
10.2 Layout Example
Figure 32. Top Layer
D2
VIN VIN BOOST
C3
C1 L1
R5 SW VOUT
D1 C2
R1
VEN EN
FB
GND
R2
Figure 33. Layout Schematic

LM2734
11 Device and Documentation Support
11.1 Development Support

11.1.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LM2734 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
11.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

LM2734
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM
www.ti.com 25-Sep-2023
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
LM2734XMK/NOPB ACTIVE SOT-23-THIN DDC 6 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SFDB Samples
LM2734XMKX/NOPB ACTIVE SOT-23-THIN DDC 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SFDB Samples
LM2734YMK LIFEBUY SOT-23-THIN DDC 6 1000 Non-RoHS Call TI Level-1-260C-UNLIM -40 to 125 SFEB
& Green
LM2734YMK/NOPB ACTIVE SOT-23-THIN DDC 6 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SFEB Samples
LM2734YMKX/NOPB ACTIVE SOT-23-THIN DDC 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SFEB Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 25-Sep-2023
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM2734 :
• Automotive : LM2734-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 4-Aug-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS TAPE DIMENSIONS

K0 P1
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2 Q1 Q2
Q3 Q4 Q3 Q4 User Direction of Feed
Pocket Quadrants
*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM2734XMK/NOPB SOT-23- DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN
LM2734XMKX/NOPB SOT-23- DDC 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN
LM2734YMK SOT-23- DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN
LM2734YMK/NOPB SOT-23- DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN
LM2734YMKX/NOPB SOT-23- DDC 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 4-Aug-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM2734XMK/NOPB SOT-23-THIN DDC 6 1000 210.0 185.0 35.0
LM2734XMKX/NOPB SOT-23-THIN DDC 6 3000 210.0 185.0 35.0
LM2734YMK SOT-23-THIN DDC 6 1000 210.0 185.0 35.0
LM2734YMK/NOPB SOT-23-THIN DDC 6 1000 210.0 185.0 35.0
LM2734YMKX/NOPB SOT-23-THIN DDC 6 3000 210.0 185.0 35.0
Pack Materials-Page 2
PACKAGE OUTLINE
DDC0006A SCALE 4.000
SOT-23 - 1.1 max height
SMALL OUTLINE TRANSISTOR
3.05 1.1
2.55 0.7
1.75 0.1 C
B A
1.45
PIN 1
INDEX AREA
1
6
4X 0.95
3.05
1.9
2.75
4
3
0.5 0.1
6X TYP
0.3 0.0
0.2 C A B
C
0 -8 TYP
SEATING PLANE 0.25

0.20
TYP GAGE PLANE
0.12
0.6
TYP
0.3
4214841/C 04/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC MO-193.
www.ti.com
EXAMPLE BOARD LAYOUT
DDC0006A SOT-23 - 1.1 max height
SYMM
6X (1.1)
1
6X (0.6) 6
SYMM
4X (0.95)
4
3
(R0.05) TYP
(2.7)
LAND PATTERN EXAMPLE

EXPLOSED METAL SHOWN
SCALE:15X
METAL UNDER SOLDER MASK

SOLDER MASK METAL SOLDER MASK OPENING
OPENING
EXPOSED METAL
EXPOSED METAL
0.07 MAX 0.07 MIN

ARROUND ARROUND
NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
SOLDERMASK DETAILS
4214841/C 04/2022
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DDC0006A SOT-23 - 1.1 max height
SYMM
6X (1.1)
1
6X (0.6) 6
SYMM
4X(0.95)
4
3
(R0.05) TYP
(2.7)
SOLDER PASTE EXAMPLE

BASED ON 0.125 THICK STENCIL
SCALE:15X
4214841/C 04/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
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LM2734 Thin SOT 1-A Load Step-Down DC/DC Regulator

VIN VIN BOOST

Changes from Revision J (December 2014) to Revision K Page

Changes from Revision I (April 2013) to Revision J Page

2 Submit Documentation Feedback Copyright © 2004–2018, Texas Instruments Incorporated

Product Folder Links: LM2734

5 Pin Configuration and Functions

Copyright © 2004–2018, Texas Instruments Incorporated Submit Documentation Feedback 3

6.2 ESD Ratings

6.3 Recommended Operating Conditions

6.4 Thermal Information

4 Submit Documentation Feedback Copyright © 2004–2018, Texas Instruments Incorporated

Product Folder Links: LM2734

6.5 Electrical Characteristics

(1) Specified to Average Outgoing Quality Level (AOQL).

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6.6 Typical Characteristics

Figure 1. Oscillator Frequency vs Temperature - L1 = 4.7 µH Figure 2. Oscillator Frequency vs Temperature - L1 = 10 μH

Figure 3. Current Limit vs Temperature Figure 4. Current Limit vs Temperature

Figure 5. VFB vs Temperature Figure 6. RDSON vs Temperature

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Typical Characteristics (continued)

Figure 7. IQ Switching vs Temperature Figure 8. Line Regulation - L1 = 4.7 µH

Figure 9. Line Regulation - L1 = 10 μH Figure 10. Line Regulation - L1 = 4.7 µH

Figure 11. Line Regulation - L1 = 10 μH

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Figure 12. LM2734 Waveforms of SW Pin Voltage and Inductor Current

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7.2 Functional Block Diagram

7.3 Feature Description

7.3.2 Undervoltage Lockout

7.3.3 Current Limit

7.3.4 Thermal Shutdown

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7.4 Device Functional Modes

7.4.2 Soft Start

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8 Application and Implementation

8.1 Application Information

CIN LM2734 CBOOST

Figure 13. VOUT Charges CBOOST

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Application Information (continued)

VIN VIN BOOST VBOOST

CIN LM2734 CBOOST

Figure 14. Zener Reduces Boost Voltage from VIN

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Application Information (continued)

VIN VIN BOOST VBOOST

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8.2 Typical Applications

VIN VIN BOOST

8.2.1.1 Design Requirements