Philips Semiconductors Product specification

Thyristors BT258S-800R
logic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated, sensitive gate thyristor in SYMBOL PARAMETER MAX. UNIT
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and VDRM, VRRM Repetitive peak off-state voltages 800 V
phase control applications. These IT(AV)
devices are intended to be interfaced IT(RMS) Average on-state current 5 A
directly to microcontrollers, logic ITSM RMS on-state current 8 A
integrated circuits and other low Non-repetitive peak on-state current 75 A
power gate trigger circuits.

PINNING - SOT428 PIN CONFIGURATION SYMBOL

PIN tab
NUMBER

1 cathode a k
2 anode
3 gate 2
g
tab anode 1 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDRM, VRRM Repetitive peak off-state - 800 V

voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A
IT(RMS) RMS on-state current all conduction angles - 8 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A
I2t I2t for fusing t = 10 ms - 28 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
IGM Peak gate current - 2 A
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 1251 ˚C
temperature

1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

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Philips Semiconductors Product specification

Thyristors BT258S-800R
logic level

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 2.0 K/W
junction to mounting base
Rth j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 50 200 µA
IL Latching current VD = 12 V; IGT = 0.1 A - 0.4 10 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 0.3 6 mA
VT On-state voltage IT = 16 A - 1.3 1.6 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 50 100 - V/µs
off-state voltage exponential waveform; RGK = 100 Ω
tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - µs
time dIG/dt = 0.2 A/µs
tq Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ

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Philips Semiconductors Product specification

Thyristors BT258S-800R
logic level

Ptot (W) Tmb(max) (˚C) ITSM / A

80
8 109
conduction form a = 1.57
angle factor 70 IT I TSM
degrees (a) 111
30 4
1.9
60 2.8 2.2 113 60 time
6 T
90 2.2
120 1.9 2.8 Tj initial = 25 C max
180 115 50
1.57
4
4 117 40

119 30

2 121 20

123 10

0 125 0
0 2 4 6 1 10 100 1000
IT(AV) (A) Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, Ptot, versus Fig.4. Maximum permissible non-repetitive peak
average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for
a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz.

ITSM / A IT(RMS) / A
1000 24

20

16
dI T/dt limit

100 12

IT I TSM 8

T time
4
Tj initial = 25 C max

10 0
10us 100us 1ms 10ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 10ms. currents, f = 50 Hz; Tmb ≤ 111˚C.

IT(RMS) / A BT258 VGT(Tj)

9 VGT(25 C)
1.6
111 C
8

7 1.4

6
1.2
5

4 1

3 0.8
2
0.6
1

0 0.4
-50 0 50 100 150 -50 0 50 100 150
Tmb / C Tj / C
Fig.3. Maximum permissible rms current IT(RMS) , Fig.6. Normalised gate trigger voltage
versus mounting base temperature Tmb. VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

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Philips Semiconductors Product specification

Thyristors BT258S-800R
logic level

IGT(Tj)
I /A
IGT(25 C) 30 T
3 Tj = 125 °C
Tj = 25 °C
2.5

20
2

1.5
typ
max
1 10
Vo = 1 V
Rs = 0.04 Ω
0.5

0 0
-50 0 50 100 150 0 0.5 1 1.5 2
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W)

10
IL(25 C) BT150
3

2.5
1
2

1.5

0.1 P tp
D
1

t
0.5

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dVD/dt (V/us)

1000
IH(25 C)
3

2.5 RGK = 100 ohms

100
2

1.5

1 10

0.5

0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj. dVD/dt versus junction temperature Tj.

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Philips Semiconductors Product specification

Thyristors BT258S-800R
logic level

MECHANICAL DATA

Dimensions in mm seating plane

Net Mass: 1.1 g 1.1 2.38 max 5.4

6.73 max
tab 0.93 max

4 min
6.22 max
10.4 max
4.6

2 0.5
0.5 min

1 3 0.3
0.8 max 0.5
(x2)
2.285 (x2)
Fig.13. SOT428 : centre pin connected to tab.

MOUNTING INSTRUCTIONS

Dimensions in mm
7.0

7.0

2.15 1.5

2.5

4.57

Fig.14. SOT428 : minimum pad sizes for surface mounting.

Notes
1. Plastic meets UL94 V0 at 1/8".

October 2002 5 Rev 2.000

Philips Semiconductors Product specification

Thyristors BT258S-800R
logic level

DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2003
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The information presented in this document does not form part of any quotation or contract, it is believed to be
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consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

October 2002 6 Rev 2.000