TR004t0410-800_DH_0001

Bidirectional thyristor 4A series
TRIAC series
1 Description
BTB04 series triacs with low holding and latchingcurrent are VRRM/VDRM
especially recommended for use onmiddle and small =600V/800V/1000V

VTM =≤1.55V
resistance type power load.
IT(RMS) =4A
TO-220F provides insulation voltage rated at 2000V RMS from
all three terminals to external heatsink. TO-220F series comply
with UL standards (File ref: E252906).
2 Features
 High current output up to 4A
 Low Peak on-state voltage drop
 High voltage
 High reliability
3 Applications
 jet pumps of dishwashers
 fans of air-conditioner
 power charger
 AC Motor control
4 Electrical Characteristics
4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800/1000 V
Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800/1000 V
Non repetitive surge peak Off-state voltage VDSM + 100 V
Non repetitive peak reverse voltage VRSM + 100 V
TO-220/TO-251/ IT(RMS) A
RMS on-state current 251(Tc=110℃) 4
TO-220F
(Tc=105℃)
tp=8.3ms 42
Non repetitive surge peak on-state current ITSM A
tp=10ms 40
I2t value for fusing (tp=10ms) I2t 8 A
Repetitive rate of rise of on-state current dIT/dt 50 A/us
(ITM=20A IG=50mA dIG/dt 50mA/ms)
Peak gate current IGM 2 A
Peak gate power PGM 5 W
Average gate power dissipation PG(AV) 1 W
Operating junction temperature range TJ - 40 ~ 125 ℃
Storage junction temperature range TSTG - 40 ~ 150 ℃
4.2 Thermal Characteristics

VALUE
PARAMETER SYMBOL UNIT
TO-220 TO-220F TO-252/251
Thermal Resistance, Junction to Case-sink RthJC 2.8 4.0 3.7 ℃/W
Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

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4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)

SYMBOL PARAMETER Test Conditions Min Typ Max Unit
Ⅰ-Ⅱ-Ⅲ - 7.0 10
IGT Triggering gate current VD=12V RL=33Ω Ⅳ - - - mA
VGT Triggering gate voltage ALL - 0.77 1.3 V
VGD Non-triggering gate voltage VD=VDRM Tj=125℃RL=3.3KΩ 0.2 - - V
Ⅰ-Ⅲ - - 20
IL Latching Current IG=1.2IGT Ⅱ - - 35 mA
IH Holding Current IT=100mA - - 20 mA
dV/dt Critical Rate of Rise of Off-state Voltage VD=2/3VDRM Gate Open Tj=125℃ 20 - - V/us
VTM Peak Forward On-State Voltage ITM=10A tp=380us - 1.31 1.55 V
IDRM Maximum forward or reverse leakage current Tj=25℃ - - 10 uA
IRRM Maximum reverse leakage current VD=VDRM VR=VRRM Tj=125℃ - - 1 mA
5 Typical characteristics diagrams
FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature
FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values)

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FIG.5: Relative variations of gate trigger current, holding current
and latching current versus junction temperature
6 Product Names Rules
T 04 10
TRIAC series
Rated Current Code

With 2 Digital,
For Example:
04 on behalf of IT(RSM)=4A
Rated Trigger current Code

With 2 Digital,,For Example:
10 on behalf of IGT3≤10mA,

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BTB 04 600
TRIAC series
Rated Current Code

With 3 Digital,
For Example:
04 on behalf of IT(RSM)=4A
Rated Voltage Code

With 3-4 Digital,For Example:
600on behalf of 600V,
7 Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity

BTB04 TO-220 BTB04 Pb-free Tube 1000//box
BTB04 TO-252 T0410 Pb-free Braid 3000//disc
BTB04 TO-220F BTB04X Pb-free Tube 1000//box
8 Dimensions
7 Dimensions

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9 Attentions
 Jiangsu Donghai Semiconductor Technology Co., Ltd. reserves the right to change the specification
without prior notice! The customer should obtain the latest version of the information before making
the order and verify that the information is complete and up to date.
 It is the responsibility of the purchaser for any failure or failure of any semiconductor product under
certain conditions. It is the responsibility of the purchaser to comply with safety standards and to
take safety measures in the system design and machine manufacturing of WXDH products in order
to avoid potential risk of failure. Injury or property damage.
 Product promotion is endless, our company will be dedicated to provide customers with better
products.
10 Appendix
Revision history:
Date REV. Description Page
2017.08.14 1.0 Original

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Bidirectional thyristor 4A series

especially recommended for use onmiddle and small =600V/800V/1000V

4.2 Thermal Characteristics

Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)

5 Typical characteristics diagrams

Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

FIG.5: Relative variations of gate trigger current, holding current

and latching current versus junction temperature

6 Product Names Rules

Rated Current Code

Rated Trigger current Code

Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

Rated Current Code

Rated Voltage Code

7 Product Specifications and Packaging Models

Product Model Package Type Mark Name RoHS Package Quantity

Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

Date REV. Description Page

2017.08.14 1.0 Original

Jiangsu Donghai Semiconductor Technology Co., Ltd. Rev. 1.0

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