Gallium nitride

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From Wikipedia, the free encyclopedia

This article is about Gallium nitride, the chemical compound. For other uses, see
Gan.

Names

IUPAC name

Gallium nitride
Other names

gallium(III) nitride

Identifiers

CAS Number 25617-97-4

3D model (JSmol) Interactive image

Interactive image

ChemSpider 105057

ECHA InfoCard 100.042.830

PubChem CID LW9640000 = LW9640000

UNII 1R9CC3P9VL

CompTox DTXSID2067111
Dashboard (EPA)

show

InChI

show
SMILES

Properties

Chemical formula GaN

Molar mass [1]

83.730 g/mol

Appearance yellow powder

Density 3[1]
6.1 g/cm

Melting point [1][2]

> 1600 °C

Solubility in water [3]

Insoluble

Band gap 3.4 eV (300 K, direct)

Electron mobility 2 [4]

1500 cm /(V·s) (300 K)

Thermal [5]
1.3 W/(cm·K) (300 K)
conductivity

Refractive index 2.429

(nD)

Structure

Crystal structure Wurtzite

Space group 4
C6v -P63mc

Lattice constant [6]

a = 3.186 Å, c = 5.186 Å

Coordination Tetrahedral
geometry

Thermochemistry

Std enthalpy of [7]

−110.2 kJ/mol

formation

⦵
(ΔfH 298)

Hazards

GHS labelling:
Pictograms

Signal word Warning

Hazard H317
statements

Precautionary P261, P272, P280, P302+P352, P321, P333+P313,

statements P501

NFPA 704 (fire [8]

diamond)

Flash point Non-flammable

Safety data sheet Sigma-Aldrich Co., Gallium nitride. Retrieved on 18

(SDS) February 2024.
 Related compounds

Other anions Gallium phosphide

Gallium arsenide

Gallium antimonide

Other cations Boron nitride

Aluminium nitride

Indium nitride

Related Aluminium gallium arsenide

compounds
Indium gallium arsenide

Gallium arsenide phosphide

Aluminium gallium nitride

Indium gallium nitride

Except where otherwise noted, data are given for materials in their standard
state (at 25 °C [77 °F], 100 kPa).

verify (what is ?)

Infobox references
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly
used in blue light-emitting diodes since the 1990s. The compound is a very hard
material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords
it special properties for applications in optoelectronic,[9][10] high-power and high-
frequency devices. For example, GaN is the substrate that makes violet (405 nm)
laser diodes possible, without requiring nonlinear optical frequency doubling.

Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a
suitable material for solar cell arrays for satellites. Military and space applications
could also benefit as devices have shown stability in high radiation
environments.[11]

Because GaN transistors can operate at much higher temperatures and work at
much higher voltages than gallium arsenide (GaAs) transistors, they make ideal
power amplifiers at microwave frequencies. In addition, GaN offers promising
characteristics for THz devices.[12] Due to high power density and voltage
breakdown limits GaN is also emerging as a promising candidate for 5G cellular
base station applications. Since the early 2020s, GaN power transistors have
come into increasing use in power supplies in electronic equipment, converting
AC mains electricity to low-voltage DC.

Physical properties[edit]

GaN crystal

GaN is a very hard (Knoop hardness 14.21 GPa[13]: 4 ), mechanically stable wide-
bandgap semiconductor material with high heat capacity and thermal
conductivity.[14] In its pure form it resists cracking and can be deposited in thin
film on sapphire or silicon carbide, despite the mismatch in their lattice
constants.[14] GaN can be doped with silicon (Si) or with oxygen[15] to n-type and
with magnesium (Mg) to p-type.[16][17] However, the Si and Mg atoms change the
way the GaN crystals grow, introducing tensile stresses and making them brittle.
[18]
Gallium nitride compounds also tend to have a high dislocation density, on the
order of 108 to 1010 defects per square centimeter.[19]

The U.S. Army Research Laboratory (ARL) provided the first measurement of the
high field electron velocity in GaN in 1999.[20] Scientists at ARL experimentally
obtained a peak steady-state velocity of 1.9×107 cm/s, with a transit time of 2.5
picoseconds, attained at an electric field of 225 kV/cm. With this information, the
electron mobility was calculated, thus providing data for the design of GaN
devices.

Developments[edit]

One of the earliest synthesis of gallium nitride was at the George Herbert Jones
Laboratory in 1932.[21]

An early synthesis of gallium nitride was by Robert Juza and Harry Hahn in 1938.
[22]

GaN with a high crystalline quality can be obtained by depositing a buffer layer at
low temperatures.[23] Such high-quality GaN led to the discovery of p-type GaN, [16]
p–n junction blue/UV-LEDs[16] and room-temperature stimulated emission[24]
(essential for laser action).[25] This has led to the commercialization of high-
performance blue LEDs and long-lifetime violet laser diodes, and to the
development of nitride-based devices such as UV detectors and high-speed field-
effect transistors.[citation needed]

LEDs[edit]

High-brightness GaN light-emitting diodes (LEDs) completed the range of primary

colors, and made possible applications such as daylight-visible full-color LED
displays, white LEDs and blue laser devices. The first GaN-based high-brightness
LEDs used a thin film of GaN deposited via metalorganic vapour-phase epitaxy
(MOVPE) on sapphire. Other substrates used are zinc oxide, with lattice constant
mismatch of only 2% and silicon carbide (SiC).[26] Group III nitride
semiconductors are, in general, recognized as one of the most promising
semiconductor families for fabricating optical devices in the visible short-
wavelength and UV region.[citation needed]

GaN transistors and power ICs[edit]

The very high breakdown voltages,[27] high electron mobility, and high saturation
velocity of GaN has made it an ideal candidate for high-power and high-
temperature microwave applications, as evidenced by its high Johnson's figure of
merit. Potential markets for high-power/high-frequency devices based on GaN
include microwave radio-frequency power amplifiers (e.g., those used in high-
speed wireless data transmission) and high-voltage switching devices for power
grids. A potential mass-market application for GaN-based RF transistors is as the
microwave source for microwave ovens, replacing the magnetrons currently
used. The large band gap means that the performance of GaN transistors is
maintained up to higher temperatures (~400 °C[28]) than silicon transistors (~150
°C[28]) because it lessens the effects of thermal generation of charge carriers that
are inherent to any semiconductor. The first gallium nitride metal semiconductor
field-effect transistors (GaN MESFET) were experimentally demonstrated in
1993[29] and they are being actively developed.

In 2010, the first enhancement-mode GaN transistors became generally available.

[30]
Only n-channel transistors were available.[30] These devices were designed to
replace power MOSFETs in applications where switching speed or power
conversion efficiency is critical. These transistors are built by growing a thin
layer of GaN on top of a standard silicon wafer, often referred to as GaN-on-Si by
manufacturers.[31] This allows the FETs to maintain costs similar to silicon power
MOSFETs but with the superior electrical performance of GaN. Another seemingly
viable solution for realizing enhancement-mode GaN-channel HFETs is to employ
a lattice-matched quaternary AlInGaN layer of acceptably low spontaneous
polarization mismatch to GaN.[32]

GaN power ICs monolithically integrate a GaN FET, GaN-based drive circuitry and
circuit protection into a single surface-mount device. [33] [34] Integration means that
the gate-drive loop has essentially zero impedance, which further improves
efficiency by virtually eliminating FET turn-off losses. Academic studies into
creating low-voltage GaN power ICs began at the Hong Kong University of
Science and Technology (HKUST) and the first devices were demonstrated in
2015. Commercial GaN power IC production began in 2018.

CMOS logic[edit]
In 2016 the first GaN CMOS logic using PMOS and NMOS transistors was
reported with gate lengths of 0.5 μm (gate widths of the PMOS and NMOS
transistors were 500 μm and 50 μm, respectively).[35]

Applications[edit]

LEDs and lasers[edit]

GaN-based violet laser diodes are used to read Blu-ray Discs. The mixture of GaN
with In (InGaN) or Al (AlGaN) with a band gap dependent on the ratio of In or Al to
GaN allows the manufacture of light-emitting diodes (LEDs) with colors that can
go from red to ultra-violet.[26]

Transistors and power ICs[edit]

GaN high-electron-mobility transistors (manufactured by Ferdinand-Braun-Institut)

GaN transistors are suitable for high frequency, high voltage, high temperature
and high efficiency applications.[citation needed] GaN is efficient at transferring
current, and this ultimately means that less energy is lost to heat. [36]

GaN High-electron-mobility transistor (HEMT)s have been offered commercially

since 2006, and have found immediate use in various wireless infrastructure
applications due to their high efficiency and high voltage operation. A second
generation of devices with shorter gate lengths will address higher frequency
telecom and aerospace applications.[37]

GaN-based metal–oxide–semiconductor field-effect transistor (MOSFET) and

metal–semiconductor field-effect transistor (MESFET) transistors also offer
advantages including lower loss in high power electronics, especially in
automotive and electric car applications.[38] Since 2008 these can be formed on a
silicon substrate.[38] High-voltage (800 V) Schottky barrier diodes (SBDs) have
also been made.[38]

The higher efficiency and high power density of integrated GaN power ICs allows
them to reduce the size, weight and component count of applications including
mobile and laptop chargers, consumer electronics, computing equipment and
electric vehicles.

GaN-based electronics (not pure GaN) have the potential to drastically cut energy
consumption, not only in consumer applications but even for power transmission
utilities.

Unlike silicon transistors that switch off due to power surges, [clarification needed] GaN
transistors are typically depletion mode devices (i.e. on / resistive when the gate-
source voltage is zero). Several methods have been proposed to reach normally-
off (or E-mode) operation, which is necessary for use in power electronics: [39][40]

● the implantation of fluorine ions under the gate (the negative charge of
the F-ions favors the depletion of the channel)
● the use of a MIS-type gate stack, with recess of the AlGaN
● the integration of a cascaded pair constituted by a normally-on GaN
transistor and a low voltage silicon MOSFET
● the use of a p-type layer on top of the AlGaN/GaN heterojunction

Radars[edit]

GaN technology is also utilized in military electronics such as active

electronically scanned array radars.[41]

Thales Group introduced the Ground Master 400 radar in 2010 utilizing GaN
technology. In 2021 Thales put in operation more than 50,000 GaN Transmitters
on radar systems.[42]

The U.S. Army funded Lockheed Martin to incorporate GaN active-device

technology into the AN/TPQ-53 radar system to replace two medium-range radar
systems, the AN/TPQ-36 and the AN/TPQ-37.[43][44] The AN/TPQ-53 radar system
was designed to detect, classify, track, and locate enemy indirect fire systems, as
well as unmanned aerial systems.[45] The AN/TPQ-53 radar system provided
enhanced performance, greater mobility, increased reliability and supportability,
lower life-cycle cost, and reduced crew size compared to the AN/TPQ-36 and the
AN/TPQ-37 systems.[43]

Lockheed Martin fielded other tactical operational radars with GaN technology in
2018, including TPS-77 Multi Role Radar System deployed to Latvia and Romania.
[46]
In 2019, Lockheed Martin's partner ELTA Systems Limited, developed a GaN-
based ELM-2084 Multi Mission Radar that was able to detect and track air craft
and ballistic targets, while providing fire control guidance for missile interception
or air defense artillery.

On April 8, 2020, Saab flight tested its new GaN designed AESA X-band radar in a
JAS-39 Gripen fighter.[47] Saab already offers products with GaN based radars,
like the Giraffe radar, Erieye, GlobalEye, and Arexis EW.[48][49][50][51] Saab also
delivers major subsystems, assemblies and software for the AN/TPS-80 (G/ATOR)
[52]

Nanoscale[edit]

GaN nanotubes and nanowires are proposed for applications in nanoscale

electronics, optoelectronics and biochemical-sensing applications. [53][54]

Spintronics potential[edit]

When doped with a suitable transition metal such as manganese, GaN is a

promising spintronics material (magnetic semiconductors).[26]

Synthesis[edit]

Bulk substrates[edit]

GaN crystals can be grown from a molten Na/Ga melt held under 100
atmospheres of pressure of N2 at 750 °C. As Ga will not react with N2 below 1000
°C, the powder must be made from something more reactive, usually in one of the
following ways:
 2 Ga + 2 NH3 → 2 GaN + 3 H2[55]

Ga2O3 + 2 NH3 → 2 GaN + 3 H2O[56]

Gallium nitride can also be synthesized by injecting ammonia gas into molten
gallium at 900–980 °C at normal atmospheric pressure.[57]

Metal-organic vapour phase epitaxy[edit]

Blue, white and ultraviolet LEDs are grown on industrial scale by MOVPE.[58][59]
The precursors are ammonia with either trimethylgallium or triethylgallium, the
carrier gas being nitrogen or hydrogen. Growth temperature ranges between 800
and 1100 °C. Introduction of trimethylaluminium and/or trimethylindium is
necessary for growing quantum wells and other kinds of heterostructures.

Molecular beam epitaxy[edit]

Commercially, GaN crystals can be grown using molecular beam epitaxy or

metalorganic vapour phase epitaxy. This process can be further modified to
reduce dislocation densities. First, an ion beam is applied to the growth surface
in order to create nanoscale roughness. Then, the surface is polished. This
process takes place in a vacuum. Polishing methods typically employ a liquid
electrolyte and UV irradiation to enable mechanical removal of a thin oxide layer
from the wafer. More recent methods have been developed that utilize solid-state
polymer electrolytes that are solvent-free and require no radiation before
polishing.[60]

Safety[edit]

GaN dust is an irritant to skin, eyes and lungs. The environment, health and
safety aspects of gallium nitride sources (such as trimethylgallium and ammonia)
and industrial hygiene monitoring studies of MOVPE sources have been reported
in a 2004 review.[61]

Bulk GaN is non-toxic and biocompatible.[62] Therefore, it may be used in the

electrodes and electronics of implants in living organisms.
See also[edit]

● Schottky diode
● Semiconductor devices
● Molecular-beam epitaxy
● Epitaxy
● Lithium-ion battery

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