Edc Lab Expts 16.10

EC3361 ELECTRONIC DEVICES AND CIRCUITS Lab.
AUR 2021
CHARACTERISTICS OF PN JUNCTION DIODE
Diode schematic Symbol:
CIRCUIT DIAGRAM:
B) Forward bias:
C) Reverse Bias:
1 SRM MCET / B.E / ECE / II Year – III Semester / 2023-24 Odd / Dr. P THARCIS
EC3361 ELECTRONIC DEVICES AND CIRCUITS Lab. AUR 2021
EXP.No.01 CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
 To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode in both forward and
reverse biased conditions.
APPARATUS REQUIRED:
S.No. Name of the apparatus Range Quantity
1. P-N Diode IN4007 1No
2. Regulated Power supply (0-30V) 1No
3. Resistor 1KΩ 1No
4. Ammeter (0-20 mA) 1No
5. Ammeter (0-200μA) 1No.
6. Voltmeter (0-1V) 1No.
7. Voltmeter (0-20V) 1No.
8. Bread board - 1No.
9. Connecting wires Single strand As required
THEORY:
A P-N junction diode conducts only in one direction. The V-I characteristics of the diode
are curve between voltage across the diode and current flowing through the diode. When external
voltage is zero, circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When Ptype (Anode) is connected to +ve terminal and n- type
(cathode) is connected to –ve terminal of the supply voltage is known as forward bias.
The potential barrier is reduced when diode is in the forward biased condition. At some forward
voltage, the potential barrier altogether eliminated and current starts flowing through the diode and
also in the circuit. Then diode is said to be in ON state. The current increases with increasing Vf.
MODEL GRAPH:
1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet.
2. Now mark +ve X-axis as Vf, -ve X-axis as Vr, +ve Y-axis as If and –ve Y-axis as Ir.
3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si reverse
biased condition in third Quadrant.
OBSERVATIONS:
A) FORWARD BIAS:
S.No. Applied Voltage(V) Forward Voltage(Vf) Forward Current(If(mA))
B) REVERSE BIAS:
S.No. Applied Voltage(V) Forward Voltage(Vr) Reverse Current((IR(μA))
Calculations:
In forward bias condition:
Static Resistance, Rs = Vf/If =
Dynamic Resistance, RD = ΔVf/ ΔIf =
In Reverse bias condition:
Static Resistance, Rs = VR/IR = Dynamic Resistance, RD
= ΔVR/ ΔIR =
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected -ve
terminal of the supply voltage is known as reverse bias and the potential barrier across the
junction increases. Therefore, the junction resistance becomes very high and a very small current
(reverse saturation current) flows in the circuit. Then diode is said to be in OFF state. The reverse
bias current is due to minority charge carriers.
PROCEDURE:
A) FORWARD BIAS:
1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is connected
to the cathode of the diode
3. Switch on the power supply and increase the input voltage (supply voltage) in steps of 0.1V.
4. Note down the corresponding current flowing through the diode and voltage across the diode for
each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage (Vf) on X-axis and current (If) on Y-axis.
B) REVERSE BIAS:
1. Connections are made as per the circuit diagram
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is connected
to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps of 1V.
4. Note down the corresponding current flowing through the diode voltage across the diode for
each and every step of the input voltage.
5. The readings of voltage and current are tabulated
6. Graph is plotted between voltage(VR) on X-axis and current (IR) on Y-axis
RESULT:
Thus the V-I characteristics of PN junction diode in forward and reverse bias condition was
plotted.
VIVA QUESTIONS:
1. Define depletion region of a diode.
2. What is meant by transition & space charge capacitance of a diode?
3. Is the V-I relationship of a diode Linear or Exponential?
4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes.
5. What are the applications of a p-n diode?
6. Draw the ideal characteristics of P-N junction diode.
7. What is the diode equation?
8. What is PIV?
9. What is the break down voltage?
10. What is the effect of temperature on PN junction diodes?
ZENER DIODE CHARACTERISTICS

Diode schematic Symbol
CIRCUIT DIAGRAM
A) FORWARD BIAS CHARACTERISTICS:
A) REVERSE BIAS CHARACTERISTICS:
EXP.No.02 ZENER DIODE CHARACTERISTICS & REGULATOR USING ZENER DIODE
AIM:
 To plot the volt ampere characteristics of a zener diode.
 To determine its knee voltage, breakdown voltage also its static and
dynamic resistances in forward and reverse bias.
 To determine the line and load regulation characteristics of a zener diode.
APPARATUS REQUIRED:
1 Zener diode IZ6 1No
2 Regulated Power supply (0-30V) 1No
3 Resistor 1KΩ 1No
4 Ammeter (0-1000µA) 1No
5 Ammeter (0-100 mA) 1No
6 Ammeter (0-200 mA) 2Nos
7 Voltmeter (0-1V) 1No
8 Voltmeter (0-20V) 1No
9 Decade Resistance Box (DRB) 1 No
10 Bread board - 1No
11 Connecting wires Single strand As required
THEORY:
A zener diode is heavily doped p-n junction diode, specially made to operate in the break
down region. A p-n junction diode normally does not conduct when reverse biased. But if the
reverse bias is increased, at a particular voltage it starts conducting heavily.
MODEL GRAPH:
OBSERVATIONS:
A) FORWARD BIAS:
S.NO Applied Voltage(V) Forward Voltage(Vf) Forward Current(If(mA))
B) REVERSE BIAS:
S.NO Applied Voltage(V) Forward Voltage(Vr) Reverse Current((IR(μA))
CALCULATIONS:
Forward bias
Static forward resistance Rdc = Vf / If Ω
Dynamic forward resistance rac = ΔVf/ΔIf
Ω Reverse bias
Static reverse resistance Rdc = Vr/ Ir Ω
Dynamic reverse resistance rac = ΔVf/ΔIf
Ω
For Load Regulation, % Voltage Regulation = (𝑉𝑁𝐿−𝑉𝐹𝐿) X 100
𝑉𝐹𝐿
This voltage is called Break down Voltage. High current through the diode can
permanently damage the device. Applying a positive potential to the anode and a negative potential
to the cathode of the zener diode establishes a forward bias condition. The forward characteristic of
the zener diode is same as that of a pn junction diode i.e. as the applied potential increases the
current increases exponentially. Applying a negative potential to the anode and positive potential to
the cathode reverse biases the zener diode As the reverse bias increases the current increases
rapidly in a direction opposite to that of the positive voltage region. Thus under reverse bias
condition breakdown occurs.
Basically there are two types of regulations such as:
 Line Regulation: In this type of regulation, series resistance and load resistance are fixed,
only input voltage is changing. Output voltage remains the same as long as the input
voltage is maintained above a minimum value.
 Load Regulation: In this type of regulation, input voltage is fixed and the load resistance
is varying. Output volt remains same, as long as the load resistance is maintained above a
minimum value.
PROCEDURE:
1) V- I CHARACTERISTICS:
a) Forward Bias Condition:
1. Connect the circuit as shown in figure .
2. Initially vary Vs in steps of 0.1V. Once the current starts increasing vary Vs in steps of 1V
up to 12V. Note down the corresponding readings of Vzf and Izf.
b) Reverse Bias Condition:
1. Connect the circuit as shown in figure (2).
2. Vary Vs gradually in steps of 1V up to 12V and note down the corresponding readings of
Vzr and Izr.
3. Tabulate different reverse currents obtained for different reverse voltages.
ZENER DIODE REGULATION CHARACTERISTICS

A) LINE REGULATION:
MODEL GRAPH:
TABULATION:
Load resistance RL = KΩ
Input Supply Zener current Load current Regulated output

Sl.No.
Voltage Vs Iz (mA) IL (mA) voltage Vo (V)
Regulation characteristics:
c) Line Regulation
1. Connect the circuit for line regulation as shown in the figure.

2. Vary supply voltage (Vs) in steps of 1V from 0-15 Volts and note the corresponding
zener current (Iz), load current (IL) and output voltage (Vo).
3. Plot the graph between Vs and Vo taking Vs on X axis and Vo on Yaxis.
d) Load Regulation:
1. Connect the circuit for Load regulation as shown in figure .
2. Now fix the power supply voltage, Vs at 10V.
3. Without connecting the load RL, note down the No-Load Voltage (VNL).
4. Note the corresponding Zener Current (IZ), Load Current (IL) and Output Voltage (VO) for
10 readings and calculate the percentage regulation.
5. Plot the graph between RL and VO taking RL on X-axis and VO on Y-axis.
LOAD REGULATION:
TABULATION:
Input supply voltage Vs = Volts

No l oad DC voltage, VNL = Volts
Load resistance Zener current Load current Output voltage % Voltage

Sl.No
RL (KΩ) Iz (mA) IL (mA) Vo (Volts) regulation
MODEL GRAPH
RESULT:
Thus plotted the VI characteristics of Zener diode and determined its parameters:
VIVAQUESTIONS:
1. What type of temp coefficient does the zener diode have?
2. If the impurity concentration is increased, how does the depletion width get effected?
3. Does the dynamic impendence of a zener diode vary?
4. Explain briefly about avalanche and zener breakdowns.
5. Draw the zener equivalent circuit.
6. Differentiate between line regulation & load regulation.
7. Which region zener diode can be used as a regulator?
8. How the breakdown voltage of a particular diode can be controlled?
9. What type of temperature coefficient does the Avalanche breakdown has?
10. By what type of charge carriers the current flows in zener and avalanche breakdown diodes?
COMMON EMITTER INPUT-OUTPUT CHARACTERISTICS
SYMBOL:(NPN TRANSISTOR)) PIN DIAGRAM: (BOTTOM VIEW)
CIRCUIT DIAGRAM:
INPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
EXP.No.03 COMMON EMITTER INPUT-OUTPUT CHARACTERISTICS
AIM:
 To draw the input and output characteristics of transistor connected in CE configuration
 To find β of the given transistor and also its h parameters.
APPARATUS REQUIRED:
1. Transistor BC107 1No
2. Dual Regulated Power supply (0-30V) 1No
Resistor 1KΩ 1No

3.
4. Ammeter (0-30 mA) 1No
5. Ammeter (0-1000μA) 1No
6. Voltmeters (0-20V) , (0-1)V, (0-10)V Each 1No
Bread board - 1 No
7.
8. Connecting wires Single strand As required
THEORY:
In common emitter configuration, input voltage is applied between base and emitter
terminals and output is taken across the collector and emitter terminals. Therefore the emitter
terminal is common to both input and output. The input characteristics resemble that of a forward
biased diode curve.. As compared to CB arrangement IB increases less rapidly with VBE.
Therefore input resistance of CE circuit is higher than that of CB circuit. The output characteristics
are drawn between Ic and VCE at constant IB. the collector current varies with VCE up to few volts
only. After this the collector current becomes almost constant, and independent of VCE. The value
of VCE up to which the collector current changes with V CE is known as Knee voltage.
MODEL GRAPH:
A) INPUT CHARACTERISTICS:
B) OUTPUT CHARACTERSITICS:
Calculations:
1.
Input Characteristics: To obtain input resistance find VBE and IB for a constant VCE
on one of the input characteristics.
Input impedance = hie= Ri = VBE/ IB(VCEis
constant) Reverse voltage gain = hre=VEB/ VCE(IB=
constant)
2.
Output Characteristics: To obtain output resistance find ICand VCBat aconstant
IB. Output admittance 1/hoe = Ro = IC/ VCE(IBis constant)
Forward current gain = hfe = IC/ IB(VCE= constant)
3.
Current amplification factor β = ΔIC/ΔIB
The transistor always operated in the region above Knee voltage, IC is always constant and is
approximately equal to IB.The current amplification factor of CE configuration is given by
β = ΔIC/ΔIB
Input Resistance, ri = ΔVBE /ΔIB (μA) at Constant VCE
Output Résistance, ro = ΔVCE /ΔIC at Constant IB (μA)
PROCEDURE:
A) INPUT CHARACTERISTICS
1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept constant at 1V and for
different values of VBB , note down the values of IB and VBE
3. Repeat the above step by keeping VCE at 2V and 4V and tabulate all the readings.
4. Plot the graph between VBE and IB for constant VCE
B) OUTPUT CHARACTERISTICS:
1. Connect the circuit as per the circuit diagram
2. For plotting the output characteristics the input current IB is kept constant at 50μA and for
different values of VCC note down the values of IC and VCE
3. Repeat the above step by keeping IB at 75 μA and 100 μA and tabulate the all the readings
4. Plot the graph between VCE and IC for constant IB
PRECAUTIONS:
1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities
TABULATION:
Input Characteristics
VCE = VCE =
0V 5V
VBB (Volts)
VBE IB VBE IB
(Volts) (µA) (Volts) (µA)
Output Characteristics
IB = 0 µA IB = 20 µA IB = 40 µA
VCC
(Volts) VCE IC VCE IC VCE IC
(Volts) (mA) (Volts) (mA) (Volts) (mA)
RESULT:
Thus obtained the input and output characteristics of transistor connected in CE
configuration and determined its parameters.
VIVA QUESTIONS:
1. What is the range of β for the transistor?
2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics.
4. What is the relation between α and β?
5. Define current gain in CE configuration.
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor.
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?
CIRCUIT DIAGRAM
Figure (b): Full Wave Rectifier (center-tap) With Filter
MODEL GRAPH
Christian College of Engineering & Technology, Oddanchatram
EXP.No.04 FULLWAVE RECTIFIERS WITH FILTER

AIM
Examine the input and output waveforms of a full wave (center tapped) rectifier with filters.
COMPNENTS& EQUIPMENTS REQUIRED
S.No Device Range Quantity

/Rating (in No.s)
1 Rectifier and Filter trainer
Board Containing
a) AC Supply. (9-0-9) V 1
b) Silicon Diodes 1N 4007 2
c) Capacitor 0.47μF 1
2 a) DC Voltmeter (0-20) V 1
b) AC Voltmeter (0-20) V 1
3 DC Ammeter (0-50) mA 1
4 Cathode Ray Oscilloscope (0-20) MHz 1
5 Decade Resistance Box 10Ω-100KΩ 1
6 Electrolytic Capacitor 100μF 1
7 Connecting wires 5A 12
THEORY
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2. During positive
half cycle of secondary voltage (input voltage), the diode D1 is forward biased and D2is reverse
biased.
The diode D1 conducts and current flows through load resistor R L. During negative half
cycle, diode D2 becomes forward biased and D1 reverse biased. Now, D2 conducts and current
flows through the load resistor RL in the same direction. There is a continuous current flow through
the load resistor RL, during both the half cycles and will get unidirectional current as show in the
model graph.
TABULATION
S.No Load Resistance (RL) Input Voltage Peak Output Voltage Peak (Vo)
(Vm)
PROCEDURE
Full-wave Rectifier with filter
1. Connect the circuit as shown in the figure (b).
2. Adjust the load resistance RL to 1Kand connect a capacitor of 100F values in parallel
with the load and note the readings of input and output voltages through Oscilloscope.
3. Note the readings of DC current, DC voltage and AC voltage.
4. Now change the load resistance RL to 2K and repeat the procedure as the above. Also
5. repeat for 10K, 100μF values.
6. Readings are tabulate as per the tabular column.
RESULT
Thus the Input and Output waveforms of a full-wave (center tapped) and bridge rectifier with
filters are observed and plotted.
VIVA QUESTIONS
1. What is a full wave rectifier?
2. How Diode acts as a rectifier?
3. What is the significance of PIV requirement of Diode in full-wave rectifier?
4. Compare capacitor filter with an inductor filter?
5. What is the theoretical maximum value of ripple factor for a full wave rectifier?
CIRCUIT DIAGRAM
MODEL GRAPH
EXPT NO: 05 FREQUENCY RESPONSE OF CE AMPLIFIER
AIM
Plot the frequency response of CE amplifier and calculate gain bandwidth.
COMPONENTS & EQUIPMENTS REQUIRED
Quantity
S.No Device Range/Rating
(in No.s)
1 CE Amplifier trainer Board with
(a) DC power supply 12V 1
(b) DC power supply 5V 1
(c) NPN transistor BC 107 1
(d) Carbon film resistor 100K, 1/2W 1
(e) Carbon film resistor 2.2K, 1/2W 1
(f) Capacitor 0.1F 2

2 Function Generator 0.l Hz- 1MHz 1
3 Dual trace C.R.O 0-20MHz 1
4 Connecting Wires 5A 4
THEORY
The CE amplifier provides high gain &wide frequency response. The emitter lead is common to both
input & output circuits and is grounded. The emitter-base circuit is forward biased. The collector current is
controlled by the base current rather than emitter current. The input signal is applied to base terminal of the
transistor and amplifier output is taken across collector terminal.. When +VE half-cycle is fed to the input
circuit, it opposes the forward bias of the circuit which causes the collector current to decrease, it decreases
the voltage more –VE. Thus when input cycle varies through a -VE half-cycle, increases the forward bias
of the circuit, which causes the collector current to increases thus the output signal is common emitter
amplifier is in out of phase with the input signal.

Bandwidth = fH-fL
TABULAR COLUMN
Input voltage: Vi =
Frequency Output (Vo) Gain Gain (in dB) =

(in Hz) (Peak to Peak) AV=V0/Vi 20 log 10 VO/ Vi
PROCEDURE
1. Connect the circuit diagram as shown in figure.
2. Adjust input signal amplitude in the function generator and observe an amplified voltage at the
output without distortion.
3. By keeping input signal voltages at 50mV, vary the input signal frequency from 0 to 1MHz in
steps as shown in tabular column and note the corresponding output voltage
RESULT
Thus the Frequency response of CE amplifier is plotted.
VIVA QUESTIONS
1. What is an Amplifier?
2. How many types of an Amplifier?
3. What is meant Band width, Lower cut-off and Upper cut-off frequency?
4. How much phase shift for CE Amplifier?
5. What are the applications?
6. Draw the Equivalent circuit for low frequencies?
CIRCUIT DIAGRAM:
MODEL GRAPH:
EXPERIMENT NO: 06 FREQUENCY RESPONSE OF CS AMPLIFIER

AIM: -
To Plot the frequency response of a CS FET amplifier. Calculate gain and bandwidth.
COMPONENTS & EQUIPMENTS REQUIRED: -
S.No Device Range/Rating Quantity

(in No.s)
1. FET amplifier Trainer
12V
Board with 1
(a) DC supply voltage
BFW
1
(b) FET 11 2
(c) Capacitors 0.1F 1
47F 1
(d) Resistors 1.5K 1
4.7 1
K
1M
2. Signal generator 0.1Hz-1MHz 1
3. CRO 0Hz-20MHz 1
4. Connecting wires 5A 4
THEORY:-
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal amplification (for
example, for amplifying wireless (signals). The device can amplify analog or digital signals. It can also switch
DC or function as an oscillator. In the FET, current flows along a semiconductor path called the channel. At one
end of the channel, there is an electrode called the source. At the other end of the channel, there is an electrode
called the drain. The physical diameter of the channel is fixed, but its effective electrical diameter can be varied
by the application of a voltage to a control electrode called the gate. Field-effect transistors exist in two major
classifications. These are known as the junction FET (JFET) and the metal-oxide semiconductor FET
(MOSFET). The junction FET has a channel consisting of N-type semiconductor (N-channel) or P-type
semiconductor (P-channel) material; the gate is made of the opposite semiconductor type. In P-type material,
electric charges are carried mainly in the form of electron deficiencies called holes. In N-type material, the
charge carriers are primarily electrons. In a JFET, the junction is the boundary between the channel and the
gate.
TABULAR COLUMN:
Input =
Frequenc Output Gain Gain

y (in Hz) Voltag Av=Vo/ (in dB) =
e (Vo) Vi 20log10(Vo/Vi
)
PROCEDURE: -
3. By keeping input signal voltage, say at 50mV, vary the input signal frequency from 0 to 1MHz
insteps as shown in tabular column and note the corresponding output voltages.
VIVA QUESTIONS:
1. What are the advantages of JFET over BJT?
2. Why input resistance in FET amplifier is more than the BJT amplifier?
3. What is a uni-polar device?
4. What is pinch off voltage?
5. What are various FETs?
6. What is Enhancement mode and Depletion mode?
7. Draw the Equivalent circuit of JFET for low frequencies?
8. Write the mathematical equation for gm in terms of gmo?
9. Write equation of FET ID in terms of VGS and Vp?
RESULT: -
Thus the Frequency response of CS FET amplifier is plotted.
CIRCUIT DIAGRAM
MODEL GRAPH
TABULAR COLUMN
Input voltage: Vi =
Frequenc Output (Vo) Gain Gain (in dB) =
y (in Hz) (Peak to AV=V0/V 20 log 10 VO/ Vi
Peak) i
EXPERIMENT No 08 FREQUENCY RESPONSE OF CC AMPLIFIER
AIM
Plot the frequency response of CC amplifier and calculate gain bandwidth.
S.No Device Range/Rating Quantity(in

No.s)
1 CC Amplifier trainer Board with
a) DC power supply 12V 1
b) DC power supply 5V 1
c) NPN transistor CL10 1
d) Carbon film resistor 0 1
e) Carbon film resistor 100K, 1/2W 1
f) Capacitor 2.2K, 1/2W 2

0.1F
THEORY
In common-collector amplifier the input is given at the base and the output is taken at the emitter. In
this amplifier, there is no phase inversion between input and output. The input impedance of the CC
amplifier is very high and output impedance is low. The voltage gain is less than unity. Here the collector is
at ac ground and the capacitors used must have a negligible reactance at the frequency of operation.
This amplifier is used for impedance matching and as a buffer amplifier. This circuit is also known as
emitter follower.
PROCEDURE
3. By keeping input signal voltages at 50mV, vary the input signal frequency from 0 to 1MHz in steps
as shown in tabular column and note the corresponding output voltages.
VIVA QUESTIONS
1. What is the other name for CC Amplifier?
2. What are the uses of CC Amplifier?

3. Why this amplifier has got the name Emitter Follower?
4. What is the maximum Voltage gain of an Emitter Follower?
5. Why it is used as a Buffer amplifier?
RESULT
Thus the Frequency response of CC amplifier is plotted. Gain, AV = dB.
Bandwidth= fH--fL = Hz.
CIRCUIT DIAGRAM
EXPERIMENT 09: MOSFET DRAIN CURRENT AND TRANSFER CHARACTERISTICS
AIM:
To study transfer and output characteristics of an n-channel Metal Oxide Semiconductor

field effect Transistor (MOSFET) in Common-source configuration.
S.No Device Range/Rating Quantity(in

No.s)
1
MOSFET 2N7000 1
2 Bread board 1
3 Resistors 1KΩ, 100KΩ 1
4 Connecting wires
5 Ammeter 0-10mA, 0-25mA 1
6 RPS 0-30V 1
THEORY:
The MOSFET is actually a four-terminal device, whose substrate, or body terminal must
be always held at one of the extreme voltage in the circuit, either the most positive for the PMOS
or the most negative for the NMOS. One unique property of the MOSFET is that the gate draws
no measurable current.
PROCEDURE:
OUTPUT/DRAIN CHARACTERISTICS:
1. Connect the circuit as per given diagram properly.
2. Keep VGS constant at some value say 1.1 V by varying VGG
3. Vary VDS in step of 1V up to 10 volts and measure the drain current ID. Tabulate all the readings.
4. Repeat the above procedure for VGS as 1.2V, 1.3V, 1.4V, 1.5V etc
TRANSFER CHARACTERISTICS:
1. Connect the circuit as per given diagram properly.
2. Set the voltage VDS constant at 10 V.
3. Vary VGS by varying VGG in the step of 0.1 up to 1.55V and note down value of drain
current ID. Tabulate all the readings.
4. Plot the output characteristics VDS vs ID and transfer characteristics VGS vs ID.
5. Calculate VT, gm, rd or ro from the graphs and verify it from the data sheet
TABULATION:
DRAIN CHARACTERISTICS
VGS = 1.1 V VGS = 1.2 V VGS = 1.3 V
VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)
TRANSFER
CHARACTERISTICS
VDS = 10 V
VGS (V) ID (mA)
RESULT:
Thus the study of transfer and output characteristics of an n-channel Metal Oxide
Semiconductor field effect Transistor (MOSFET) in Common-source configuration is completed
successfully
CIRCUIT DIAGRAM
MODEL GRAPH
EXPT NO: 10 FREQUENCY RESPONSE OF CB AMPLIFIER
AIM
Plot the frequency response of CB amplifier and calculate gain bandwidth.
Quantity
S.No Device Range/Rating
(in No.s)
1 CB Amplifier trainer Board with
(g) DC power supply 12V 1
(h) DC power supply 5V 1
(i) NPN transistor BC 107 1
(j) Carbon film resistor 100K, 1/2W 1
(k) Carbon film resistor 2.2K, 1/2W 1
(l) Capacitor 0.1F 2

THEORY
The CB amplifier provides high gain &wide frequency response. The base lead is common to both
input & output circuits and is grounded. The emitter-base circuit is forward biased. The collector current is
controlled by the base current rather than emitter current. The input signal is applied to base terminal of the
transistor and amplifier output is taken across collector terminal.. When +VE half-cycle is fed to the input
circuit, it opposes the forward bias of the circuit which causes the collector current to decrease, it decreases
the voltage more –VE. Thus when input cycle varies through a -VE half-cycle, increases the forward bias
of the circuit, which causes the collector current to increases thus the output signal is common emitter
amplifier is in out of phase with the input signal.
Bandwidth = fH-fL
TABULAR COLUMN
Input voltage: Vi =

PROCEDURE
3. By keeping input signal voltages at 50mV, vary the input signal frequency from 0 to 1MHz in
steps as shown in tabular column and note the corresponding output voltage
RESULT
Thus the Frequency response of CB amplifier is plotted.
VIVA QUESTIONS
1. What is an Amplifier?
2. How many types of an Amplifier?
3. What is meant Band width, Lower cut-off and Upper cut-off frequency?
4. How much phase shift for CB Amplifier?
5. What are the applications?
6. Draw the Equivalent circuit for low frequencies?
CIRCUIT DIAGRAM
. Vcc
VCC
RC
R3
CL
49 Q / Dr. P THARCIS
SRM MCET / B.E / ECE / II Year – III Semester / 2023-24 Odd
2
CB
RL
R2
MODEL GRAPH:
EXPT NO: 11: FREQUENCY RESPONSE OF MULTI-STAGE (CASCODE) AMPLIFIER
AIM:
The goal of this experiment is to construct a cascode amplifier and determine its frequency
response.
APPARATUS AND ITS REQUIRED SPECIFICATIONS:
Part type Component

Transistor (Q1) BC547
Transistor (Q2) BC547
:
Specification Value
DC Voltage 15 V
(VCC)
Input AC Voltage 10 mV peak to peak
Gain 100
Input Impedance > 4.3 kΩ

Load 5.6 kΩ
PROCEDURE:
1) Consider the cascode amplifier of figure 1. Use the following values: RS=10kΩ R3=22kΩ
R2=4kΩ R1=10kΩ RE=4.3kΩ RC=3.3kΩ RL=10kΩ CS=CE=CL= CB=10μF, VCC= 15V.
Assume that Q1 and Q2 are identical transistors with β= 200. Perform the DC analysis. Calculate
VB,Q1, VE,Q1, VB,Q2, VE,Q2, VC,Q2.
2) Calculate the midband gain Am, and the input and output impedance at midband.
3) Estimate fL using the technique of short circuit time constants.
4) Estimate fH, if fT= 800 MHz and Cu = 2 pF for both transistors. You may use either the Miller
technique and calculate the dominant pole, or the technique of open circuit time constants.
THEORY:
The cascade is a two-stage amplifier that consists of a common emitter stage feeding into a common
base stage. Compared to a single amplifier stage, this combination may have one or more of the following
characteristics:
 higher input-output isolation,
 higher input impedance,
 higher bandwidth .
TABULAR COLUMN
Input voltage: Vi =

RESULT:
Thus the frequency response of cascade amplifier is estimated and graph is plotted.
CIRCUIT DIAGRAM
INPUT GRAPH:
OUTPUT GRAPH:
EXPT NO: 12 CLASS -A POWER AMPLIFIER(TRANSFORMER COUPLED)
AIM:
To observe the input and output waveforms and to calculate the efficiency.
EQUIPMENT REQUIRED:
APPARATUS REQUIRED:
Power supply 0-30V- 1 No.
CRO 20MHz - 1 No.
Digital multimeter - 1 No.
Signal generator 1Hz - 1MHz - 1 No.
COMPONENTS REQUIRED:
Resistors 33KΩ - 1N0
5.6KΩ -2NO
470Ω -1NO
Capacitors 47uf -1NO
2.2uf - 1NO
TRANSFORMER -1NO
THEORY:
The amplifier is said to be class A power amplifier if the q point and the input signal are
selected such that the output signal is obtained for a full input cycle. For this class the position
of q point is approximately y at the mid point of the load line. For all the values of input
signal the transistor remains in the active region and never entire into the cutoff or saturation
region. The collector current flows for 3600 (life cycle) of the input signal in other words the
angle of the collector current flow is 3600 the claa A amplifiers or furthers classified as
directly coupled and transformer coupled and transformer coupled amplifiers in directly
coupled type .The load is directly connected in the collector circuit while in the transformer
coupled type, the load is coupled to the collector using the transformer.
Advantages:
1. Distortion analysis is very important
2. It amplifies audio frequency signals faithfully hence they are called as audio amplifiers
Disadvantages:
1. H parameter analysis is not applicable
2. Due to large power handling the transistor is used power transistor which is large in
size and having large power rating
PROCEDURE:
1. CONNCECT the circuit as per the ciecuit diadram
2. Set Vs (say 250 to 300 mV), at 10 KHz using signal generator.
3. Connect milli ammeter to the ammeter terminals
4. By keeping the input voltage constant, vary the frequency from 0 to 1MHz
in regular steps .
5. Note down the corresponding output voltage from CRO
6. Calculate the DC input power using the formula Pdc= VccIc
7. Calculate the AC output power using the formula Pac = V 2/8R

O L
8. Calculate the efficiency n = Pac /Pdc

9. Plot the graph between Gain (db) and frequency.
10. Calculate bandwidth from the graph.
RESULT:
Thus the Gain and frequency as observed of Class A power amplifier is observed
CIRCUIT DIAGRAM
TABULATION
EXPT NO: 13 – CMRR MEASUREMENT USING BJT DIFFERENTIAL AMPLIFIER
AIM:
To measure the Common Mode Rejection Ratio using Differential amplifier.
COMPONENTS REQUIRED:
BJT Q2N2222A 2nos
Resistors 1KΩ,10KΩ, 5 nos
Capacitors 10μF, 2nos
RPS 0-30V 2nos
Function - 2nos
generator
THEORY:
Differential amplifiers it is a type of electronics amplifier that multiplies the difference
between two input signals by constant factor. Differential amplifiers are thereby able to reduce noise that is
common to both inputs, only amplifying the differential signal that we are interested in.
Differential amplifier is a basic circuit which used in all linear integrated circuit (IC), and it
also a basic circuit in analog to digital and digital to analog converter circuits. Differential amplifiers circuit
constructing from two bipolar junction transistor (BJT), so that have two separated inputs and outputs pins with
common emitter pin as shown in figure.
PROCEDURE:
1)Construct the circuit shown in figure 6.5, then make the circuit quiescent (no signal applied) by connecting
both bases to ground.
2) Now measure the DC values of (𝑉𝑐1, 𝑉𝑐2, 𝑉𝐸, 𝐼𝐵1, 𝐼𝐵2, 𝐼𝐸1, 𝐼𝐸2, 𝐼𝐸)
3) Applied all differential amplifier modes.
 Single-input mode
 Double input mode
 Common input mode
Show the output voltage signal and its 𝑉𝑝 and RMS value .
4) Using the measured data in the previous tables to calculate:
- 𝐴𝑣𝑑𝑚
- 𝐴𝑣𝑐𝑚
- 𝐶𝑀𝑅𝑅 𝑎𝑛𝑑 𝐶𝑀𝑅𝑅 𝑖𝑛 𝑑𝐵
RESULT:
Thus the differential amplifier is worked in different modes and CMRR is measured.

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EC3361 ELECTRONIC DEVICES AND CIRCUITS Lab.

CHARACTERISTICS OF PN JUNCTION DIODE

Diode schematic Symbol:

EXP.No.01 CHARACTERISTICS OF PN JUNCTION DIODE

S.No. Name of the apparatus Range Quantity

1. P-N Diode IN4007 1No

2. Regulated Power supply (0-30V) 1No

3. Resistor 1KΩ 1No

4. Ammeter (0-20 mA) 1No

5. Ammeter (0-200μA) 1No.

6. Voltmeter (0-1V) 1No.

7. Voltmeter (0-20V) 1No.

8. Bread board - 1No.

9. Connecting wires Single strand As required

S.No. Applied Voltage(V) Forward Voltage(Vf) Forward Current(If(mA))

S.No. Applied Voltage(V) Forward Voltage(Vr) Reverse Current((IR(μA))

6. Graph is plotted between voltage(VR) on X-axis and current (IR) on Y-axis

ZENER DIODE CHARACTERISTICS

A) REVERSE BIAS CHARACTERISTICS:

EXP.No.02 ZENER DIODE CHARACTERISTICS & REGULATOR USING ZENER DIODE

S.No. Name of the apparatus Range Quantity

1 Zener diode IZ6 1No

2 Regulated Power supply (0-30V) 1No

3 Resistor 1KΩ 1No

4 Ammeter (0-1000µA) 1No

5 Ammeter (0-100 mA) 1No

6 Ammeter (0-200 mA) 2Nos

7 Voltmeter (0-1V) 1No

8 Voltmeter (0-20V) 1No

9 Decade Resistance Box (DRB) 1 No

10 Bread board - 1No

11 Connecting wires Single strand As required

S.NO Applied Voltage(V) Forward Voltage(Vf) Forward Current(If(mA))

S.NO Applied Voltage(V) Forward Voltage(Vr) Reverse Current((IR(μA))

ZENER DIODE REGULATION CHARACTERISTICS

Input Supply Zener current Load current Regulated output

1. Connect the circuit for line regulation as shown in the figure.

Input supply voltage Vs = Volts

Load resistance Zener current Load current Output voltage % Voltage

COMMON EMITTER INPUT-OUTPUT CHARACTERISTICS

SYMBOL:(NPN TRANSISTOR)) PIN DIAGRAM: (BOTTOM VIEW)

EXP.No.03 COMMON EMITTER INPUT-OUTPUT CHARACTERISTICS

S.No. Name of the apparatus Range Quantity

1. Transistor BC107 1No

2. Dual Regulated Power supply (0-30V) 1No

Resistor 1KΩ 1No

4. Ammeter (0-30 mA) 1No

5. Ammeter (0-1000μA) 1No

6. Voltmeters (0-20V) , (0-1)V, (0-10)V Each 1No

8. Connecting wires Single strand As required

Figure (b): Full Wave Rectifier (center-tap) With Filter

EXP.No.04 FULLWAVE RECTIFIERS WITH FILTER

COMPNENTS& EQUIPMENTS REQUIRED

S.No Device Range Quantity

EXPT NO: 05 FREQUENCY RESPONSE OF CE AMPLIFIER

COMPONENTS & EQUIPMENTS REQUIRED

(b) DC power supply 5V 1

(c) NPN transistor BC 107 1

(d) Carbon film resistor 100K, 1/2W 1