Es4e8 15 2021
Es4e8 15 2021
Es4e8 15 2021
Description
Introductory description
Module aims
Practically all electronic equipment, whether domestic or industrial, requires power conditioning to
deliver the energy for it to operate correctly. This is using electronics for power processing, not
information processing. The applications vary widely from power supplies for laptops and mobile
phone chargers, through industrial motor drives, hybrid and electric vehicle drives, electric rail
transport, to solar and wind energy systems and power transmission and distribution systems.
With the foundation of studying the module ES3E0 Power Electronics, ES4E8 is to give students a
wide range, in-depth and advanced knowledge of Power Electronics and Devices.
• To introduce the advanced power electronics as power processing and control, and to
present the power electronics converters used for switch-mode power supplies, connection
of renewable energy to the power grid and electrification of transportation.
• To introduce advanced power semiconductor device design concepts for industry-ready
power electronic converter components, and describe the theory of their operation.
• Advanced packaging and reliability considerations for power electronic converters, taking
into account thermal and switching budgets.
• To introduce emerging and future power semiconductor devices utilising new materials such
as silicon carbide and gallium nitride.
• To introduce power electronic converters/inverters and control for various applications and
give design examples.
Outline syllabus
This is an indicative module outline only to give an indication of the sort of topics that may be
covered. Actual sessions held may differ.
Learning outcomes
• Understand the operation and conceptual design principles of advanced power converters
with PWM control.
• Systematically analyse and design multilevel power electronic converters.
• Design the control of advanced power converters for different applications.
• Conduct complex packaging and reliability analysis of power semiconductor devices.
• Design a power semiconductor device.
• Analyse systematically new materials for power semiconductor devices; silicon carbide and
gallium nitride.
• Apply advanced concepts through the use of device physics in the context of device design
Transferable skills
Study
Study time
Type Required
Lectures 30 sessions of 1 hour (20%)
Practical classes 2 sessions of 3 hours (4%)
Other activity 4 hours (3%)
Private study 110 hours (73%)
Total 150 hours
Costs
No further costs have been identified for this module.
Assessment
You must pass all assessment components to pass the module.
Students can register for this module without taking any assessment.
Assessment group D6
~Platforms - AEP,QMP
Feedback on assessment
Solutions to questions in problem sheets and discussion of the solutions during example classes.
Marked laboratory reports.
Cohort level feedback on examinations
Pre-requisites
• All of
Courses
This module is Core for: