BJT Transistor Modeling

• A model is an equivalent circuit that represents the AC

characteristics of the transistor.

• A model uses circuit elements that approximate the

behavior of the transistor.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
H-Parameter Model
Common-Emitter
h ie =  re
h fe =  ac

Common-Base

h ib = re
h fb = −   − 1

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Fixed-Bias Configuration

• The input is applied to the base

• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and
output is 180

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Fixed-Bias Configuration

AC equivalent

re model

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Fixed-Bias Calculations
Input impedance:
Z i = R B ||  re
Z i   re R E  10 re

Output impedance:
Z o = R C || rO
Z o  R C ro  10R C

Voltage gain: Current gain:

Vo (R || r )
Av = =− C o I  R B ro
Vi re Ai = o =
I i (ro + R C )(R B +  re )
RC
Av = − ro  10R C
re A i   ro  10R C , R B  10 re

Current gain from voltage gain:

Zi
Ai = −A v
RC

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Voltage-Divider Bias

re model requires you to determine , re, and ro.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Voltage-Divider Bias
Calculations
Input impedance:

R  = R 1 || R 2
Z i = R  ||  re

Output impedance:

Z o = R C || ro Current gain:
I  R ro
Z o  R C ro  10R C Ai = o =
I i (ro + R C )(R  +  re )
I R 
Voltage gain: Ai = o  r  10R C
Ii R  +  re o
Vo − R C || ro I
Av = = A i = o   ro  10R C , R   10 re
Vi re Ii
Vo R
Av =  − C ro  10R C
Vi re Current gain from voltage gain:
Z
Ai = −A v i
RC
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Emitter-Bias
Configuration

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations

Input impedance:
Z i = R B || Z b
Z b =  re + ( + 1)R E
Z b  (re + R E )
Z b  R E

Output impedance:
Zo = R C

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Gain Calculations
Voltage gain:
Vo R C
Av = =−
Vi Zb
V RC
Av = o = −
Vi re + R E Z b =  (re + R E )
Vo R
Av =  − C Z b  R E
Vi RE

Current gain: Current gain from voltage gain:

I R B Zi
Ai = o = Ai = −A v
Ii R B + Zb RC

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Emitter-Follower Configuration

• This is also known as the common-collector configuration.

• The input is applied to the base and the output is taken from the
emitter.
• There is no phase shift between input and output.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations
Input impedance:

Z i = R B || Z b
Z b =  re + ( + 1)R E
Z b  (re + R E )
Z b  R E

Output impedance:

Z o = R E || re
Z o  re R E  re

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Gain Calculations
Voltage gain:

Vo RE
Av = =
Vi R E + re
V
A v = o  1 R E  re , R E + re  R E
Vi

Current gain:
R B
Ai  −
R B + Zb

Current gain from voltage gain:

Z
Ai = −A v i
RE

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Base Configuration

• The input is applied to the

emitter.
• The output is taken from the
collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input
and output.

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Calculations
Input impedance:
Z i = R E || re

Output impedance:
Zo = R C

Voltage gain:
Vo R C R C
Av = = 
Vi re re

Current gain:
I
A i = o = −   −1
Ii

Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.