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    2sb1197k Shandong

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    STRUGGLE KEEP

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    2sb1197k Shandong

    Uploaded by

    STRUGGLE KEEP
    7 views3 pages

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    2sb1197k_shandong

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    7 views3 pages

    2sb1197k Shandong

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    STRUGGLE KEEP

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    © All Rights Reserved
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    SEMICONDUCTOR 2SB1197K

    Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR
    LOW FREQUENCY TRANSISTOR
    * Feature:
    Package:SOT-23
    (1) Low Vce(sat)
    Vce≤-0.5V
    (Ic/Ib= -0.5A/-50mA)
    (2) Ic= -0.8A
    (3) Complements the 2SD1781K

    ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Characteristic Symbol Rating Unit
    PIN: 1 2 3
    Collector-Emitter Voltage Vceo -32 V
    STYLE
    Collector-Base Voltage Vcbo -40 V
    NO.1 B E C
    Collector Current Ic -0.8 A
    Collector Dissipation Ta=25℃* PD 200 mW

    Junction Temperature Tj 150 ℃


    Storage Temperature Tstg -55-150 ℃

    ELECTRICAL CHARACTERISTICS at Ta=25℃


    Characteristic Symbol Min Typ Max Unit Test Conditions
    Collector-Base Breakdown Voltage BVcbo -40 V Ic= -50uA
    Collector-Emitter Breakdown Voltage# BVceo -32 V Ic= -1mA
    Emitter-Base Breakdown Voltage BVebo -5 V Ie= -50uA
    Collector-Base Cutoff Current Icbo -0.5 uA Vcb= -20V
    Emitter-Base Cutoff Current Iebo -0.5 uA Veb= -4V
    DC Current Gain Hfe 120 390 Vce= -3V Ic= -100mA
    Collector-Emitter Saturation Voltage Vce(sat) -0.5 V Ic= -500mA Ib= -50mA
    Output Capacitance Cob 12 30 PF Vcb= -10V Ie=0 f=1MHz
    Current Gain-Bandwidth Product fT 50 200 MHz Vce= -5V Ie= 50mA
    f=100MHZ

    * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25℃.


    # Pulse Test: Pulse Width ≤300uS,Duty cycle ≤2%
    DEVICE MARKING:
    2SB1197K=AHR
    SEMICONDUCTOR 2SB1197K
    Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR

    2SB1197K
    www.s-manuals.com

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