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    D 882

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    Glenn
    The D882 is an NPN silicon transistor that can handle currents up to 3A and voltages up to 40V. It has high hFE linearity and features include a collector-emitter saturation voltage of 0.3-0.5V and a current gain bandwidth product of 80MHz. The transistor is manufactured by WuXi YouDa Electronics and has maximum ratings for junction temperature, storage temperature, and electrical characteristics.

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    D 882

    Uploaded by

    Glenn
    259 views1 page
    The D882 is an NPN silicon transistor that can handle currents up to 3A and voltages up to 40V. It has high hFE linearity and features include a collector-emitter saturation voltage of 0.3-0.5V and a current gain bandwidth product of 80MHz. The transistor is manufactured by WuXi YouDa Electronics and has maximum ratings for junction temperature, storage temperature, and electrical characteristics.

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    The D882 is an NPN silicon transistor that can handle currents up to 3A and voltages up to 40V. It has high hFE linearity and features include a collector-emitter saturation voltage of 0.3-0.5V and a current gain bandwidth product of 80MHz. The transistor is manufactured by WuXi YouDa Electronics and has maximum ratings for junction temperature, storage temperature, and electrical characteristics.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    259 views1 page

    D 882

    Uploaded by

    Glenn
    The D882 is an NPN silicon transistor that can handle currents up to 3A and voltages up to 40V. It has high hFE linearity and features include a collector-emitter saturation voltage of 0.3-0.5V and a current gain bandwidth product of 80MHz. The transistor is manufactured by WuXi YouDa Electronics and has maximum ratings for junction temperature, storage temperature, and electrical characteristics.

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    YOUDA TRANSISTOR D882

    Si NPN TRANSISTOR D882

    DESCRIPTION AND FEATURES PIN CONFIGURATIONS


    *Collector-Emitter voltage: BVCBO= 40V PIN SYMBOL
    *Collector current up to 3A 1 Emitter
    *High hFE linearity 2 Collector
    3 Base

    ABSOLUTE MAXIMUM RATINGS (Tamb=25 )


    PARAMETER SYMBOL VALUE UNIT
    Collector-Base Voltage BVCBO 40 V
    Collector-Emitter Voltage BVCEO 30 V
    Emitter-Base Voltage BVEBO 5 V
    Tcase=25 10 W
    Collector Dissipation PCM
    Tamb=25 1 W
    DC ICM 3 A
    Collector Current
    Pulse Icp 7 A
    Base Current IB 0.6 A
    Junction Temperature Tj +150
    Storage Temperature Tstg -55 +150

    ELECTRICAL CHARACTERISTICS (Tamb=25 ,all voltage referenced to GND Unless otherwise specified)

    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

    Collector Cut-Off Current ICBO VcB=30V, IE=0 100 nA


    Emitter Cut-Off Current IEBO VEB=3V, IC=0 100 nA
    hFE1 VcE=2V, IC=20mA 30 200
    DC Current Gain
    hFE2 VcE=2V, IC=1A 100 400
    Collector-Emitter Saturation Voltage VCE(sat) Ic=2A, IB=0.2A 0.3 0.5 V
    Base-Emitter Saturation Voltage VBE(sat) Ic=2A, IB=0.2A 1.0 2.0 V
    Current Gain Bandwidth Product fT VcE=5V, IC=0.1A 80 MHz
    VcB=10V,
    Output Capacitance Cob 45 pF
    IE=0,f=1MHz

    CLASSIFICATION OF hFE
    RANK Q P E
    RANGE 100 200 160 320 200 400

    WuXi YouDa Electronics Co., Ltd


    Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
    Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com
    SHENZHEN OFFICE Tel 86-755-83740369 13823533350 Fax 86-755-83741418
    Ver 3.1 1 of 1 2004-9-20

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