Data Sheet, Rev. 2.

0, May 2010

BTM7752G
High Current H-Bridge
Trilith IC 3G

Automotive Power
 High Current H-Bridge
BTM7752G

Table of Contents

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.4.3 Status Flag Diagnosis with Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.4.4 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.4.5 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7.1 Application and Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Data Sheet 2 Rev. 2.0, 2010-05-28

High Current H-Bridge BTM7752G
Trilith IC 3G

1 Overview
Features
• Integrated high current H-Bridge
• Path resistance of max. 295 mΩ @ 150 °C (typ. 150 mΩ @ 25 °C)
• Low quiescent current of typ. 5µA @ 25 °C
• PWM capability of up to 25kHz combined with active freewheeling
• Current limitation level of 12 A typ. (8 A min.)
• Driver circuit with logic inputs
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
PG-DSO-36-29
• Overvoltage lock out
• Undervoltage shut down
• Switch-mode current limitation for reduced power dissipation in overcurrent situation
• Integrated dead time generation
• Operation up to 28V
• Green Product (RoHS compliant)
• AEC Qualified

Description
The BTM7752G is a fully integrated high current H-bridge for motor drive applications. It contains two p-channel
highside MOSFETs and two n-channel lowside MOSFETs with an integrated driver IC in one package. Due to the
p-channel highside switches the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a
microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current
sense, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and
short circuit.
The BTM7752G provides an optimized solution for protected high current PWM motor drives with very low board
space consumption.

Type Package Marking

BTM7752G PG-DSO-36-29 BTM7752G

Data Sheet 3 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Diagram

2 Block Diagram

VS VS

Current Overtemp. Current

Sense detection Sense
HS1 HS2
HS1 HS2
Undervolt. Overvolt.
Overcurr. Overcurr.
Detection detection detection
Detection
HS1 HS2

Gate Driver Gate Driver

HS HS

OUT1 HS off LS off Digital Logic LS off HS off OUT2

Gate Driver Gate Driver

LS LS

Overcurr. Overcurr.
Detection Detection
LS1 LS2
LS1 LS2

GND GND

IN1 IN2 INH IS

Figure 1 Block Diagram

3 Terms
following figure shows the terms used in this data sheet.

VS IS , -ID(HS) VDS(HS) VDS(HS)

IIN1 VS

IN1
VIN1 IOUT , ID, IL
I IN2
OUT1
IN2
VIN2 VSD(LS) VOUT
IINH
IOUT , ID, IL
INH
VINH OUT2
IIS VOUT
VSD(LS)
IS
VIS
GND

IGND , I D(LS)

Figure 2 Terms

Data Sheet 4 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Pin Configuration

4 Pin Configuration

4.1 Pin Assignment

OUT1 1 36 OUT1
OUT1 2 35 OUT1
OUT1 3 34 OUT1
OUT1 4 33 OUT1
GND 5 32 VS
GND 6 31 VS
GND 7 30 VS
GND 8 29 VS
IN1 9 28 IS
IN2 10 27 INH
VS 11 26 GND
VS 12 25 GND
VS 13 24 GND
VS 14 23 GND
OUT2 15 22 OUT2
OUT2 16 21 OUT2
OUT2 17 20 OUT2
OUT2 18 19 OUT2

Figure 3 Pin Configuration BTM7752G

4.2 Pin Definitions and Functions

Pins written in bold type need power wiring.

Pin Symbol Function

1..4, 33..36 OUT1 Output of first half bridge
5..8, 23..26 GND Ground
9 IN1 Input of first half bridge
10 IN2 Input of second half bridge
11..14, 29..32 VS Supply, all pins to be connected and shorted externally
15..22 OUT2 Output of second half bridge
27 INH Inhibit pin, to set device in sleep/stand-by mode
28 IS Current sense and error signal

Data Sheet 5 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

General Product Characteristics

5 General Product Characteristics

5.1 Absolute Maximum Ratings

Absolute Maximum Ratings 1)

Tj = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
5.1.1 Supply voltage VS -0.3 45 V –
5.1.2 Logic Input Voltage VIN1,VIN2, -0.3 5.5 V –
VINH
5.1.3 HS/LS continuous drain current ID(HS) -4 4 A TC < 85°C
ID(LS) switch active
5.1.4 Voltage between VS and IS pin VS -VIS -0.3 45 V –
Thermal Maximum Ratings
5.1.5 Junction temperature Tj -40 150 °C –
5.1.6 Storage temperature Tstg -55 150 °C –
ESD Susceptibility
5.1.7 ESD susceptibility VESD kV HBM2)

IN1, IN2, IS, INH -2 2

OUT1, OUT2, GND, VS -4 4
1) Not subject to production test, specified by design.
2) HBM according to EIA/JESD 22-A 114B (1.5 kΩ, 100pF)

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.

Data Sheet 6 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

General Product Characteristics

Maximum Single Pulse Current

20

15
Imax [A]

10

0
0.0001 0.001 0.01 0.1 1 10 100

tpulse [s]
Figure 4 BTM7752G Maximum Single Pulse Current (TC = Tj(0) < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.

5.2 Functional Range

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Max.
5.2.1 Supply Voltage Range for VS(nor) 8 18 V VS pins shorted
Normal Operation
5.2.2 Extended Supply Voltage Range VS(ext) 5.5 28 V VS pins shorted;
for Operation Parameter
deviations possible;
1)

5.2.3 Junction Temperature Tj -40 150 °C –

1) Overtemperature protection available up to supply voltage VS = 18V.

Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.

Data Sheet 7 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

General Product Characteristics

5.3 Thermal Resistance

Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.
1)
5.3.1 Thermal Resistance RthjSP(LS) – – 29 K/W
Junction to Soldering Point, Low Side Switch
RthjSP(LS) = ΔTj(LS)/ Pv(LS)
1)
5.3.2 Thermal Resistance RthjSP(HS) – – 29 K/W
Junction to Soldering Point, High Side Switch
RthjSP(HS) = ΔTj(HS)/ Pv(HS)
1)
5.3.3 Thermal Resistance RthjSP – – 29 K/W
Junction to Soldering Point, both switches
RthjSP= max[ΔTj(HS), ΔTj(LS)] /
(Pv(HS) + Pv(LS))
1) 2)
5.3.4 Thermal Resistance Rthja – 46 – K/W ;
Junction-Ambient
1) Not subject to production test, specified by design.
2) Specified Rthja value is according to Jedec JESD51-2, -7 at natural convection on FR4 2s2p board; The product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).

Transient thermal impedance Zthja

Figure 5 is showing the typical transient thermal impedance of high side or low side switch of BTM7752G mounted
according to JEDEC JESD51-7 at natural convection on FR4 2s2p board. The device (chip+package) was
simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). For the
simulation each chip was separately powered with 1W at an ambient temperature Ta of 85°C.

50

45

40

35
Zth-ja [K/W]

30

25

20

15

10

5 High side sw itch / Low side sw itch

0
0,001 0,01 0,1 1 10 100 1000

tpulse [s]

Figure 5 Typical transient thermal impedance of BTM7752G on JESD51-7 2s2p board

(1W each chip (separately heated), Ta = 85°C, single pulse)

Data Sheet 8 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6 Block Description and Characteristics

6.1 Supply Characteristics

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0A, VS pins shorted, all voltages with respect to ground, positive
current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
General
6.1.1 Supply Current IS(on) – 5 9.5 mA VINH or VIN1 or VIN2 = 5 V
DC-mode
normal operation
(no fault condition)
6.1.2 Quiescent Current IS(off) – 5 15 µA VINH = VIN1 = VIN2 = 0 V
Tj < 85 °C; 1)
– – 30 µA VINH = VIN1 = VIN2 = 0 V

1) Not subject to production test, specified by design.

10
I S ( o f f ) [µA]

0
-40 0 40 80 120 160

T [°C]

Figure 6 Typical Quiescent Current vs. Junction Temperature (typ. @ VS = 13.5V)

Data Sheet 9 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.2 Power Stages

The power stages of the BTM7752G consist of p-channel vertical DMOS transistors for the high side switches and
n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located
in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize
power dissipation in the forward operation of the integrated diodes.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 7.

High Side Switch Low Side Switch

160 220
RON(HS) [mΩ]

RON(LS) [mΩ]
200
140
180
120
160 Tj = 150°C

100 140
Tj = 150°C
120
80
100 Tj = 25°C
Tj = 25°C
60 80
Tj = -40°C Tj = -40°C
60
40
40
20
20

0 0
4 8 12 16 20 24 28 4 8 12 16 20 24 28
VS [V] VS [V]

Figure 7 Typical On State Resistance vs. Supply Voltage

Data Sheet 10 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.2.1 Power Stages - Static Characteristics

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
6.2.1 On state high side resistance RON(HS) mΩ IOUT = 1 A
VS = 13.5 V
– 60 – Tj = 25 °C; 1)
– 85 115 Tj = 150 °C
6.2.2 Leakage current high side IL(LKHS) µA VINH = VIN1 = VIN2 = 0 V
VOUT = 0 V
– – 1 Tj < 85 °C; 1)
– – 5 Tj = 150 °C
6.2.3 Reverse diode VDS(HS) V IOUT = -1 A
forward-voltage high side 2) – 0.9 – Tj = -40 °C; 1)
– 0.8 – Tj = 25 °C; 1)
– 0.6 0.8 Tj = 150 °C
Low Side Switch - Static Characteristics
6.2.4 On state low side resistance RON(LS) mΩ IOUT = -1 A
VS = 13.5 V
– 90 – Tj = 25 °C; 1)
– 150 180 Tj = 150 °C
6.2.5 Leakage current low side -IL(LKLS) µA VINH = VIN1 = VIN2 = 0 V
VOUT = VS
– – 1 Tj < 85 °C; 1)
– – 3 Tj = 150 °C
6.2.6 Reverse diode VSD(LS) V IOUT = 1 A
forward-voltage low side 2) – 0.9 – Tj = -40 °C; 1)
– 0.8 – Tj = 25 °C; 1)
– 0.6 0.8 Tj = 150 °C
1) Not subject to production test, specified by design.
2) Due to active freewheeling diode is conducting only for a few µs.

Data Sheet 11 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.2.2 Switching Times

IN

t
tdr(HS ) t r(HS ) t df (HS ) tf (HS )
V OUT
90% 90%

ΔVOUT ΔVOUT

40% 40%

Figure 8 Definition of switching times high side (Rload to GND)

IN

t
tdf (LS ) tf (LS ) t dr(LS ) tr(LS )
V OUT

60% 60%

ΔVOUT ΔVOUT

10% 10%

Figure 9 Definition of switching times low side (Rload to VS)

Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
• ΔtHS = (tdr(HS) + 0.2 tr(HS)) - (tdf(HS) + 0.8 tf(HS))
• ΔtLS = (tdf(LS) + 0.2 tf(LS)) - (tdr(LS) + 0.8 tr(LS)).

Data Sheet 12 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.2.3 Power Stages - Dynamic Characteristics

VS = 13.5V, Tj = -40 °C to +150 °C, RLoad = 12 Ω, VINH = 5V, VS pins shorted, all voltages with respect to ground,
positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
High Side Switch Dynamic Characteristics
6.2.7 Rise-time of HS tr(HS) 0.35 0.7 1.05 µs –
6.2.8 Slew rate HS on ΔVOUT/ – 9.6 – V/µs –
tr(HS)
6.2.9 Switch on delay time HS tdr(HS) 3 5 8 µs –
6.2.10 Fall-time of HS tf(HS) 0.35 0.7 1.05 µs –
6.2.11 Slew rate HS off -ΔVOUT/ – 9.6 – V/µs –
tf(HS)
6.2.12 Switch off delay time HS tdf(HS) 1.5 3.5 5.5 µs –
Low Side Switch Dynamic Characteristics
6.2.13 Rise-time of LS tr(LS) 0.4 0.8 1.2 µs –
6.2.14 Slew rate LS off ΔVOUT/ – 8.4 – V/µs –
tr(LS)
6.2.15 Switch off delay time LS tdr(LS) 1.5 3.5 5.5 µs –
6.2.16 Fall-time of LS tf(LS) 0.35 0.8 1.2 µs –
6.2.17 Slew rate LS on -ΔVOUT/ – 8.4 – V/µs –
tf(LS)
6.2.18 Switch on delay time LS tdf(LS) 2.5 5 7.5 µs –

6.3 Protection Functions

The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 6.3.4). Overvoltage, overtemperature and overcurrent are indicated by a fault current IIS(LIM) at
the IS pin as described in the paragraph “Status Flag Diagnosis with Current Sense Capability” on Page 17
and Figure 13.
In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other
error modes.

6.3.1 Overvoltage Lock Out

To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts both lowside
MOSFETs off and turns both highside MOSFET on, if the supply voltage VS is exceeding the over voltage
protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage
decreases below the switch-on voltage VOV(ON). This behavior of the BTM7752G will lead to freewheeling in
highside during over voltage.

Data Sheet 13 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.3.2 Undervoltage Shut Down

To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (both outputs are tri-state),
if the supply voltage VS drops below the switch-off voltage VUV(OFF). In this case all latches will be reset. The IC
becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).

6.3.3 Overtemperature Protection

The BTM7752G is protected against overtemperature by integrated temperature sensors. Each half bridge, which
consists of one high side and one low side switch, is protected by one temperature sensor located in the high side
switch. Both temperature sensors function independently. A detection of overtemperature through temperature
sensor leads to a shut down of both switches in the half bridge. This state is latched until the device is reset by a
low signal with a minimum length of treset simultaneously at the INH pin and both IN pins, provided that its
temperature has decreased at least the thermal hysteresis ΔT in the meantime.
Overtemperature protection is available up to supply voltage VS = 18V.
For sufficient over temperature protection please consider also operation below the limitations outlined in Figure
4 and Figure 5.
Repetitive use of the overtemperature protection might reduce lifetime.

6.3.4 Current Limitation

The current in the bridge is measured in all four switches. As soon as the current in forward direction in one switch
is reaching the limit ICLx, this switch is deactivated for tCLS. In case of INH = 5V (high) the other switch of the same
half bridge is activated for the same time (tCLS). During that time all changes at the related IN pin are ignored.
However, the INH pin can still be used to switch all MOSFETs off. After tCLS the switches return to their initial
setting. The error signal at the IS pin is reset after 1.5 * tCLS if no overcurrent state is detected in the meantime.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current di/dt as shown in Figure 11.

IL
t C LS 1. 5*tC LS
IC Lx
I C Lx 0

O
t

IIS

I I S (l i m )

O
t

Figure 10 Timing Diagram Current Limitation and Current Sense

Data Sheet 14 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

High Side Switch Low Side Switch

14 14

Tj = -40°C Tj = -40°C

I C L L [A]
I C L H [A]

13 13
ICLH0 Tj = 25°C ICLL0 Tj = 25°C

Tj = 150°C Tj = 150°C

12 12

11 11

10 10
0 50 100 150 0 50 100 150

dIL/dt [A/ms] dIL/dt [A/ms]

Figure 11 Current Limitation Level vs. Current Slew Rate dIL/dt

High Side Switch Low Side Switch

16 16

15 15

14 14
ICLL [A]
IC LH [A]

13 Tj = -40°C 13
Tj = 25°C
12 12 Tj = 25°C

Tj = 150°C Tj = -40°C
11 11
Tj = 150°C

10 10

9 9

8 8
6 10 14 18 22 26 6 10 14 18 22 26
VS [V] VS [V]
Figure 12 Typical Current Limitation Detection Levels vs. Supply Voltage

In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage that the power dissipation in the BTM7752G is much smaller
than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time
without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start
up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.

Data Sheet 15 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.3.5 Short Circuit Protection

The device provides embedded protection functions against
• output short circuit to ground
• output short circuit to supply voltage
• short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the over-
temperature shut down (see Chapter 6.3.3) of the device.

6.3.6 Electrical Characteristics - Protection Functions

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Over Voltage Lock Out
6.3.1 Switch-ON voltage VOV(ON) 27.8 – – V Vs decreasing
6.3.2 Switch-OFF voltage VOV(OFF) 28 – 30 V Vs increasing
1)
6.3.3 ON/OFF hysteresis VOV(HY) – 0.2 – V
Under Voltage Shut Down
6.3.4 Switch-ON voltage VUV(ON) – – 5.5 V VS increasing
6.3.5 Switch-OFF voltage VUV(OFF) 4.0 – 5.4 V VS decreasing
1)
6.3.6 ON/OFF hysteresis VUV(HY) – 0.2 – V
Thermal Shut Down
1)
6.3.7 Thermal shut down junction TjSD 155 175 200 °C ; VS ≤ 18 V
temperature
1)
6.3.8 Thermal switch on junction TjSO 153 – 190 °C
temperature
1)
6.3.9 Thermal hysteresis ΔT – 7 – °C
1)
6.3.10 Reset pulse at INH and IN pin treset 8 – – µs
(INH, IN1 and IN2 low)
Current Limitation
6.3.11 Current limitation detection ICLH0 8 12 16 A VS = 13.5 V
level high side
6.3.12 Current limitation detection ICLL0 8 12 16 A VS = 13.5 V
level low side
6.3.13 Shut off time for HS and LS tCLS 50 100 200 µs VS = 13.5 V, Tj = 25 °C
1) Not subject to production test, specified by design.

Data Sheet 16 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.4 Control and Diagnostics

6.4.1 Input Circuit

The control inputs INx and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. To set the device in stand-by mode, INH and INx pins need to be all
connected to GND. When the INH is high, in each half bridge one of the two power switches (HSx or LSx) is
switched on, while the other power switch is switched off, depending on the status of the INx pin. When INH is low,
a high INx signal will turn the corresponding highside switches on. This provides customer the possibility to switch
on one high side switch while keeping the other switches off and therefore to do an open load detection together
with external circuitry (see also Chapter 7 - Application Information). A low on all INx and INH signal will turn off
both power switches. To drive the logic inputs no external driver is needed, therefore the BTM7752G can be
interfaced directly to a microcontroller.

6.4.2 Dead Time Generation

In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, which senses the
status of the MOSFETs to ensure that the high or low side switch can be switched on only if the corresponding
low or high side switch is completely turned off.

6.4.3 Status Flag Diagnosis with Current Sense Capability

The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense
mode), a current source is connected to the status pin, which delivers a current proportional to the forward load
current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the
reverse direction no current will be driven except for a marginal leakage current IIS(LK). If both high side switches
are in on state, the IS provides the sense current of the high side switch, which has been turned on first. To reset
this assignment both inputs IN1 and IN2 has to be set to low and both high side switches has to be off.
The external resistor RIS determines the voltage per output current. E.g. with the nominal value of 3.1k for the
current sense ratio kILIS = IL / IIS, a resistor value of RIS = 1kΩ leads to VIS = (IL / 3.1A)V. In case of a fault condition
the status output is connected to a current source which is independent of the load current and provides IIS(lim).
The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In
case of current limitation the IIS(lim) is activated for 1.5 * tCLS.

Normal operation: Fault condition:

current sense mode error flag mode

VS VS
ESD-ZD ESD-ZD
IS IS
IIS~ ILoad
Sense Sense
output R IS VIS output RIS VIS
IIS(lim) IIS(lim)
logic logic

Figure 13 Sense current and fault current

Data Sheet 17 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

IIS [mA]

IIS(lim)

lue
va
is
kil
er
low u e
val
k ilis
her
hig

Current Sense Mode Error Flag Mode

(High Side)

ICLx IL [A]

Figure 14 Sense Current vs. Load Current

Data Sheet 18 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.4.4 Truth Table

Device State Inputs Outputs Mode

INH IN1 IN2 HS1 LS1 HS2 LS2 IS
Normal operation 0 0 0 OFF OFF OFF OFF 0 Stand-by mode, reset
1 0 0 OFF ON OFF ON 0 –
1)
1 0 1 OFF ON ON OFF CS HS2 –
1)
1 1 0 ON OFF OFF ON CS HS1 –
2)
1 1 1 ON OFF ON OFF CS –
1)
Open-Load detection 0 0 1 OFF OFF ON OFF CS HS2 Enable Open-load detection
mode 0 1 0 ON OFF OFF OFF CS HS1 1)
Enable Open-load detection
2)
0 1 1 ON OFF ON OFF CS
Over-voltage (OV) X X X ON OFF ON OFF 1 Shut-down of LSS, HSS
activated, error detected
Under-voltage (UV) X X X OFF OFF OFF OFF 0 UV lockout, reset
Overtemperature or 0 0 0 OFF OFF OFF OFF 0 Stand-by mode, reset of latch
short circuit of HSS or 1 X X OFF OFF OFF OFF 1 Shut-down with latch, error
LSS 3) X 1 X detected
X X 1
Current limitation 1 0 X ON OFF X X 1 Short Circuit in LS1 detected,
mode half bridge 1 half bridge 2 operates in normal
mode
1 1 X OFF ON X X 1 Short Circuit in HS1 detected,
half bridge 2 operates in normal
mode
0 1 X OFF OFF X X 1 Short Circuit in HS1 detected
Current limitation 1 X 0 X X ON OFF 1 Short Circuit in LS2 detected,
mode half bridge 2 half bridge 1 operates in normal
mode
1 X 1 X X OFF ON 1 Short Circuit in HS2 detected,
half bridge 1 operates in normal
mode
0 X 1 X X OFF OFF 1 Short Circuit in HS2 detected
1) Previous current sense assignment to be reset by IN1=IN2=low and both high side switches off (see Chapter 6.4.3).
2) When both high side switches are in on state, the CS provides the sense signal for the high side switch, which has been
turned on first.
3) In short circuit of HSS or LSS, the junction temperature will arise and as soon as the over temperature shut down threshold
is reached the device will shut down and latch the status. Short circuit of HSS and LSS itself won’t be detected as failure.

Inputs: Switches Status Flag IS:

0 = Logic LOW OFF = switched off CS = Current sense mode
1 = Logic HIGH ON = switched on 1 = Logic HIGH (error)
X = 0 or 1 X = switched on or off

Data Sheet 19 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Block Description and Characteristics

6.4.5 Electrical Characteristics - Control and Diagnostics

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Control Inputs (IN and INH)
6.4.1 High level threshold voltage VINH(H), – 1.6 2 V –
INH, IN1, IN2 VIN1(H), VIN2(H)
6.4.2 Low level threshold voltage VINH(L), 1.1 1.4 – V –
INH, IN1, IN2 VIN1(L), VIN2(L)
1)
6.4.3 Input voltage hysteresis VINHHY,VINHY – 200 – mV
6.4.4 Input current IINH(H), – 30 200 µA VIN1,VIN2,VINH = 5.5 V
IIN1(H), IIN2(H)
6.4.5 Input current IINH(L), – 25 125 µA VIN1, VIN2, VINH = 0.4 V
IIN1(L), IIN2(L)
Current Sense
6.4.6 Current sense ratio in static kILIS 103 RIS = 1 kΩ
on-condition 2 3.1 4.2 IL = 6 A
kILIS = IL / IIS 1.7 3.1 4.6 IL = 2 A
1.5 3.1 5 IL = 1 A
6.4.7 Differential Current sense dkILIS 103 RIS = 1 kΩ
ratio in static on-condition 2 3.1 4.2 IL > 0.5 A
1)
dkILIS = dIL /dIIS
6.4.8 Maximum analog sense IIS(lim) 4.25 5 7 mA VS = 13.5 V
current - Sense current in RIS = 1 kΩ
fault condition
6.4.9 Isense leakage current IISL – – 1 µA VIN1 = VIN2 = 0 V,
no error detected
6.4.10 Isense leakage current, IISH – 1 100 µA VIN1 or VIN2 = 5 V
active high side switch IL = 0 A
1) Not subject to production test, specified by design.

Data Sheet 20 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Application Information

7 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.

Microcontroller Voltage Regulator Reverse Polarity

Protection
XC866 I/O WO
TLE I
Reset RO 4278G DZ1 VS
Vdd Q 10V

CQ D
GND
22µF

I/O I/O I/O

Vss CD R1 e.g.
I/O I/O I/O 47nF 10kΩ
IPD50P03P4L-11

BTM7752G VS VS

HS1 HS2 CSc CS

INH
RINH
4.7kΩ

IN1
RIN1 OUT1
4.7kΩ

IN2
OUT2
M
RIN2
4.7kΩ

IS LS1 LS2

GND GND

RIS
RD1 RD2
1kΩ

Figure 15 Application Diagram

Note: This is a very simplified example of an application circuit. The function must be verified in the real application.

7.1 Application and Layout Considerations

Due to the fast switching times for high currents, special care has to be taken during the PCB layout. Stray
inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges.
The BTM7752G has no separate pin for power ground and logic ground. Therefore it is recommended to ensure
that the offset between power ground and logic ground pins of the device is minimized. It is also
necessary to ensure that all VS pins are at the same voltage level. Therefore the VS pins need to be
shorted together. Voltage differences between the VS pins may cause parameter deviations (such as reduced
current limits and current sense ratio (kilis)) up to a latched shutdown of the device with error signal on the IS pin,
similar to overtemperature shutdown.
Due to the fast switching behavior of the device in current limitation mode or overvoltage lock out a low ESR
electrolytic capacitor Cs of at least 100 µF from VS to GND is recommended. This prevents destructive voltage
peaks and drops on VS. This is recommended for both PWM and non PWM controlled applications. The value of
the capacitor must be verified in the real application.
In addition a ceramic capacitor Csc from VS to GND close to each device is recommended to provide current for
the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable
value for this capacitor would be about 470 nF.

Data Sheet 21 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Application Information

It is recommended to do the freewheeling in the low side path to ensure a proper function and avoid unintended
overtemperature detection and shutdown. For proper operation it is also recommended to put a pull-down resistor
RDx on each output OUTx to GND with a value in the range of e.g. 1...10 kΩ. These resistors can also be used for
open load detection.

Considerations for Open Load Detection Mode

As mentioned in Chapter 6.4.1 both high side switches can be switched on independently while all other switches
are off. This will be realized by setting the corresponding IN signal to high while INH and the other IN are low.

Device State Inputs Outputs Mode

INH IN1 IN2 HS1 LS1 HS2 LS2 IS
Open-Load detection 0 0 1 OFF OFF ON OFF CS HS21) HS2 active
mode 0 1 0 ON OFF OFF OFF CS HS11) HS1 active
0 1 1 ON OFF ON OFF CS2) both HSx are active
1) Previous current sense assignment to be reset by IN1=IN2=low and both high side switches off (see Chapter 6.4.3)
2) When both high side switches are in on state, the CS provides the sense signal for the high side switch, which has been
turned on at first.

Together with the recommended pull-down resistors on the outputs OUTx to GND this provides the possibility to
do an open load detection in H-bridge configuration.
In case of one high side is active while the other half bridge is off (HS off and LS off) a current of up to 2mA will
be sourced out of the OUT of the high ohmic half bridge. This has to be considered while choosing the right value
of the pull-down resistor.

Data Sheet 22 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Package Outlines

8 Package Outlines

STAND OFF
0.35 x 45˚

2.65 MAX.
2.45 -0.2
7.6 -0.2 1)

0.23 +0.09
0.2 -0.1

8˚ MAX.
1.1
0.65
C
0.1 C 36x 0.7 ±0.2
SEATING PLANE
17 x 0.65 = 11.05 10.3 ±0.3
D
2)
0.33 ±0.08
0.17 M C A-B D 36x
A
36 19
Ejector Mark
Depth 0.2 MAX.

1 18
B
1)
12.8 -0.2
Index Marking

1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion of 0.05 max. per side
PG-DSO-36-20, -29, -34, -43, -44-PO V05

Footprint 1.67
0.65
0.45

9.73
HLGF1145

Figure 16 PG-DSO-36-29 (Plastic Green Dual Small Outline Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages. Dimensions in mm

Data Sheet 23 Rev. 2.0, 2010-05-28

 High Current H-Bridge
BTM7752G

Revision History

9 Revision History

Revision Date Changes

2.0 2010-05-28 Initial version Data Sheet

Data Sheet 24 Rev. 2.0, 2010-05-28

Edition 2010-05-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.