STM32 U5 Axxx
STM32 U5 Axxx
STM32 U5 Axxx
Features
Includes ST state-of-the-art patented
technology LQFP64 (10 x 10 mm)
LQFP100 (14 x 14 mm)
WLCSP150
(5.38 x 5.47 mm)
UFBGA132 (7 x 7 mm)
TFBGA169 (7 x 7 mm)
• 2 μA Stop 3 mode with 40-Kbyte SRAM • With SRAM3 ECC off: 2514-Kbyte RAM
including 66 Kbytes with ECC
• 8.2 μA Stop 3 mode with 2.5-Mbyte SRAM
• With SRAM3 ECC on: 2450-Kbyte RAM
• 4.65 µA Stop 2 mode with 40-Kbyte SRAM including 322 Kbytes with ECC
• 17.5 µA Stop 2 mode with 2.5-Mbyte SRAM • External memory interface supporting SRAM,
• 18.5 μA/MHz Run mode at 3.3 V PSRAM, NOR, NAND, and FRAM memories
Core • 2 Octo-SPI memory interfaces
• Arm® 32-bit Cortex®-M33 CPU with • 16-bit HSPI memory interface up to 160 MHz
TrustZone®, MPU, DSP, and FPU
Rich graphic features
ART Accelerator
• Neo-Chrom GPU (GPU2D) accelerating any
• 32-Kbyte ICACHE allowing 0-wait-state angle rotation, scaling, and perspective correct
execution from flash and external memories: texture mapping
frequency up to 160 MHz, 240 DMIPS • 16-Kbyte DCACHE2
• 16-Kbyte DCACHE1 for external memories • Chrom-ART Accelerator (DMA2D) for smooth
motion and transparency effects
Power management
• Chrom-GRC (GFXMMU) allowing up to 20 %
• Embedded regulator (LDO) and SMPS of graphic resources optimization
step-down converter supporting switch
on-the-fly and voltage scaling • MIPI® DSI host controller with two DSI lanes
running at up to 500 Mbit/s each
Benchmarks • LCD-TFT controller (LTDC)
• 1.5 DMIPS/MHz (Drystone 2.1) • Digital camera interface
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.1 Arm Cortex-M33 core with TrustZone and FPU . . . . . . . . . . . . . . . . . . . . 23
3.2 ART Accelerator (ICACHE and DCACHE) . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.1 Instruction cache (ICACHE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.2 Data cache (DCACHE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.4 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.4.1 Flash memory protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4.2 Additional flash memory protections when TrustZone activated . . . . . . 28
3.4.3 FLASH privilege protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.5 Embedded SRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.5.1 SRAMs TrustZone security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.5.2 SRAMs privilege protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.6 TrustZone security architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.6.1 TrustZone peripheral classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.6.2 Default TrustZone security state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.7 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.8 Global TrustZone controller (GTZC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.9 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.9.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.9.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.9.3 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.9.4 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.9.5 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.9.6 PWR TrustZone security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.10 Peripheral interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.11 Reset and clock controller (RCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.11.1 RCC TrustZone security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
3.12 Clock recovery system (CRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
List of tables
from flash memory in low-power mode, ICACHE ON (1-way), prefetch ON. . . . . . . . . . . 200
Table 44. Typical current consumption in Run mode on SMPS, with different codes running
from flash memory in low-power mode, ICACHE ON (1-way), prefetch ON. . . . . . . . . . . 201
Table 45. Current consumption in Sleep mode on LDO, flash memory in power down . . . . . . . . . . 202
Table 46. Current consumption in Sleep mode on SMPS, flash memory in power down. . . . . . . . . 203
Table 47. Current consumption in Sleep mode on SMPS,
flash memory in power down, VDD = 3.0 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Table 48. SRAM1/SRAM3/SRAM5 current consumption in Run/Sleep mode with LDO and SMPS 205
Table 49. Static power consumption of flash memory banks when supplied by LDO or SMPS . . . . 208
Table 50. Current consumption in Stop 0 mode on LDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Table 51. Current consumption in Stop 0 mode on SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Table 52. Current consumption in Stop 1 mode on LDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Table 53. Current consumption in Stop 1 mode on SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
Table 54. Current consumption in Stop 2 mode on LDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Table 55. SRAM static power consumption in Stop 2 when supplied by LDO . . . . . . . . . . . . . . . . . 216
Table 56. Current consumption in Stop 2 mode on SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
Table 57. SRAM static power consumption in Stop 2 when supplied by SMPS. . . . . . . . . . . . . . . . 219
Table 58. Current consumption in Stop 3 mode on LDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
Table 59. SRAM static power consumption in Stop 3 when supplied by LDO . . . . . . . . . . . . . . . . . 223
Table 60. Current consumption in Stop 3 mode on SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Table 61. SRAM static power consumption in Stop 3 when supplied by SMPS. . . . . . . . . . . . . . . . 226
Table 62. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
Table 63. Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
Table 64. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233
Table 65. Typical dynamic current consumption of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236
Table 66. Low-power mode wake-up timings on LDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241
Table 67. Low-power mode wake-up timings on SMPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
Table 68. Regulator mode transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
Table 69. Wake-up time using USART/LPUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
Table 70. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245
Table 71. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
Table 72. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247
Table 73. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Table 74. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Table 75. MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
Table 76. HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254
Table 77. SHSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 256
Table 78. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 256
Table 79. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 256
Table 80. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
Table 81. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
Table 82. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
Table 83. EMI characteristics (for fHSE = 8 MHz, fHCLK = 160 MHz) . . . . . . . . . . . . . . . . . . . . . . . . 260
Table 84. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
Table 85. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
Table 86. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262
Table 87. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262
Table 88. Output voltage characteristics (all I/Os except FT_t I/Os in VBAT mode,
and FT_o I/Os) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265
Table 89. Output voltage characteristics for FT_t I/Os in VBAT mode, and for FT_o I/Os . . . . . . . . 266
Table 90. Output AC characteristics, HSLV OFF (all I/Os except FT_c,
FT_t in VBAT mode, and FT_o I/Os) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 266
List of figures
1 Introduction
This document provides the ordering information and mechanical device characteristics of
the STM32U5Axxx microcontrollers.
For information on the Arm®(a) Cortex®-M33 core, refer to the Cortex®-M33
Technical Reference Manual, available from the www.arm.com website.
For information on the device errata with respect to the datasheet and reference manual,
refer to the STM32U59xxx and STM32U5Axxx errata sheet (ES0553).
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
2 Description
STM32U5A5AJH
STM32U5A9NJH
STM32U5A9BJY
STM32U5A5RJT
STM32U5A5VJT
STM32U5A9VJT
STM32U5A5ZJY
STM32U5A9ZJY
STM32U5A5ZJT
STM32U5A9ZJT
Peripherals
Flash memory
4
(Mbytes)
System
2512(768+64+832+16+832)
(Kbytes)
SRAM
Backup
2048 backup SRAM + 128 backup registers
(bytes)
External memory
controller for static No Yes(1)
memories (FSMC)
OCTOSPI 2(2) 2
HSPI No Yes
STM32U5A5QJ/II
STM32U5A5AJH
STM32U5A9NJH
STM32U5A9BJY
STM32U5A5RJT
STM32U5A5ZJY
STM32U5A9ZJY
STM32U5A5VJT
STM32U5A9VJT
STM32U5A5ZJT
STM32U5A9ZJT
Peripherals
Neo-Chrom
No Yes No Yes No Yes No Yes
(GPU2D)
Graphic accelerators
Chrom-GRC
No Yes No Yes No Yes No Yes
(GFXMMU)
Chrom-ART
Yes
(DMA2D)
DSI No Yes No Yes
LTDC No Yes No Yes No Yes No Yes
Adv. control 2 (16 bits)
Gen. purpose 4 (32 bits) and 3 (16 bits)
Basic 2 (16 bits)
Timers
LPUART 1
SAI 1 2
FDCAN 1
OTG_HS Yes
UCPD Yes
SDMMC 2(3)
Camera Yes/
Yes
interface No(4)
Yes/
PSSI Yes
No(4)
MDF (multi-function
Yes
digital filter)
ADF (audio digital
Yes
filter)
STM32U5A5QJ/II
STM32U5A5AJH
STM32U5A9NJH
STM32U5A9BJY
STM32U5A5RJT
STM32U5A5ZJY
STM32U5A9ZJY
STM32U5A5VJT
STM32U5A9VJT
STM32U5A5ZJT
STM32U5A9ZJT
Peripherals
STM32U5A5QJ/II
STM32U5A5AJH
STM32U5A9NJH
STM32U5A9BJY
STM32U5A5RJT
STM32U5A5ZJY
STM32U5A9ZJY
STM32U5A5VJT
STM32U5A9VJT
STM32U5A5ZJT
STM32U5A9ZJT
Peripherals
12-bit DAC 1
DAC Nb of 12-bit
2
D-to-A conv.
Internal voltage
No Yes
reference buffer
Analog comparator 2
Operational amplifiers 2
Maximum CPU
160 MHz
frequency
Operating voltage 1.71 to 3.6 V
Ambient operating temperature: –40 to +85 °C / –40 to +125 °C
Operating temperature
Junction temperature: –40 to +105 °C / –40 to +130 °C
LQFP LQFP UFBGA LQFP TFBGA WLCSP TFBGA
Package WLCSP150
64 100 132 144 169 208 216
1. For the LQFP100 package, only FSMC bank1 is available. Bank1 can only support a multiplexed NOR/PSRAM memory
using the NE1 chip select.
2. Two OCTOSPIs are available only in muxed mode.
3. When both are used simultaneously, one supports only SDIO interface.
4. Available on packages without SMPS, not available on packages with SMPS.
5. Active tampers in output sharing mode (one output shared by all inputs).
32 Kbytes
DQS as AF
ICACHE
TRACECLK,
OTFDEC2 and OCTOSPI2 memory interface IO[7:0], CLK, NCLK, NCS,
TRACED[3:0] Arm Cortex-M33
C-BUS DQS as AF
160 MHz
TrustZone FPU HSPI1 memory interface IO[15:0], CLK, NCLK, NCS,
DCACHE1
DQS[1:0] as AF
16 Kbytes
S-BUS
Flash memory (up to 4 Mbytes)
FIFO
PHY
DP
USB HS
GFXMMU SRAM5 (832 Kbytes) DM
D[7:0], D[3:1]dir
CMD, CMDdir,CK, CKin SDMMC1 FIFO
D0dir, D2dir DCMI/PSSI D[15:0], CK, CMD as AF
HCLKx
PCLKx
PI[15:0] GPIO port I TIM3 32b 4 channels, ETR as AF
CORDIC
PJ[11:0] GPIO port J
CRS TIM4 32b 4 channels, ETR as AF
156 AF EXT IT. WKP FMAC
1 channel,
TIM16 16b I2C4/SMBUS SCL, SDA, SMBA as AF
1 compl. channel, BKIN as AF
SAI1
AHB bus-matrix
@VSW
@VDDA
RTC_OUT1, RTC_OUT2, XTAL 32k
RTC_REFIN, RTC_TS DAC1_OUT1
RTC D/A converter 1
ITF
TAMP_OUT[8:1],
TAMP
TAMP_IN[8:1] D/A converter 2 DAC1_OUT2
@VDDA AHB/APB3
VREF+
VREF buffer @VDDA
APB3 160 MHz
SCL, SDA, SMBA as AF I2C3/SMBUS VDDUSB power VDDIO2 power VDDA power
VDD power domain VSW power domain
domain domain domain
MOSI, MISO, SCK, NSS as SPI3
AF
RX, TX, CTS, RTS_DE as
Note: VSW = VDD when VDD is above VBOR0, and VSW = VBAT when VDD is below VBOR0.
LPUART1
AF MSv66059V5
3 Functional overview
Table 3. Access status versus protection level and execution modes when TZEN = 0
User execution
RDP Debug/boot from RAM/ bootloader(1)
Area (boot from flash memory)
level
Read Write Erase Read Write Erase
1 Yes No No Yes No No
System memory (2)
2 Yes No No N/A N/A N/A
Table 3. Access status versus protection level and execution modes when TZEN = 0 (continued)
User execution
RDP Debug/boot from RAM/ bootloader(1)
Area (boot from flash memory)
level
Read Write Erase Read Write Erase
1. When the protection level 2 is active, the debug port, the boot from RAM and the boot from system memory are disabled.
2. The system memory is only read-accessible, whatever the protection level (0, 1 or 2) and execution mode.
3. Option bytes are only accessible through the flash memory registers and OPSTRT bit.
4. The Flash main memory is erased when the RDP option byte changes from level 1 to level 0.
5. SWAP_BANK option bit can be modified.
6. OTP can only be written once.
7. The backup registers are erased when RDP changes from level 1 to level 0.
8. All SRAMs are erased when RDP changes from level 1 to level 0.
9. The OTFDEC keys are erased when the RDP option byte changes from level 1 to level 0.
Table 4. Access status versus protection level and execution modes when TZEN = 1
User execution
RDP Debug/ bootloader(1)
Area (boot from flash memory)
level
Read Write Erase Read Write Erase
Table 4. Access status versus protection level and execution modes when TZEN = 1 (continued)
User execution
RDP Debug/ bootloader(1)
Area (boot from flash memory)
level
Read Write Erase Read Write Erase
1. When the protection level 2 is active, the debug port and the bootloader mode are disabled.
2. Depends on TrustZone security access rights.
3. The system memory is only read-accessible, whatever the protection level (0, 1 or 2) and execution mode.
4. Option bytes are only accessible through the flash memory registers and OPSTRT bit.
5. The Flash main memory is erased when the RDP option byte regresses from level 1 to level 0.
6. SWAP_BANK option bit can be modified.
7. OTP can only be written once.
8. The backup registers are erased when RDP changes from level 1 to level 0.
9. All SRAMs are erased when RDP changes from level 1 to level 0.
10. The OTFDEC keys are erased when the RDP option byte changes from level 1 to level 0.
further access to this area until next system reset. One area per bank can be selected
at the beginning of the secure area.
• volatile block-based secure flash memory area
Each page can be programmed on-the-fly as secure or nonsecure.
0x0800 0000
Nonsecure Nonsecure Nonsecure
0x0BFF FFFF
Code - Flash and SRAM
0x0C00 0000
NSC Secure or NSC Secure or NSC
0x0FFF FFFF
0x1000 0000
0x17FF FFFF
Code - external memories Nonsecure
0x1800 0000
Nonsecure
0x1FFF FFFF
0x2000 0000
Nonsecure
0x2FFF FFFF
SRAM
0x3000 0000
NSC Secure or NSC Secure or NSC
0x3FFF FFFF
0x4000 0000
Nonsecure Nonsecure Nonsecure
0x4FFF FFFF
Peripherals
0x5000 0000
NSC Secure or NSC Secure or NSC
0x5FFF FFFF
0x6000 0000 Secure or Secure or
External memories Nonsecure
0xDFFF FFFF nonsecure or NSC nonsecure or NSC
1. NSC = nonsecure callable.
The BOOT0 value comes from the PH3-BOOT0 pin or from an option bit depending on the
value of a user option bit to free the GPIO pad if needed.
The bootloader is located in the system memory, programmed by ST during production.
The bootloader is used to reprogram the flash memory by using USART, I2C, SPI, FDCAN
or USB OTG_HS in device mode through the DFU (device firmware upgrade).
The bootloader is available on all devices. Refer to the application note
STM32 microcontroller system memory boot mode (AN2606) for more details.
The RSS are embedded in a flash memory area named secure information block,
programmed during ST production.
For example, the RSS enable the SFI (secure firmware installation), thanks to the RSSe SFI
(RSS extension firmware).
This feature allows customer to produce the confidentiality of the firmware to be provisioned
into the STM32, when production is sub-contracted to untrusted third party.
The RSS are available on all devices, after enabling the TrustZone through the TZEN option
bit. Refer to the application note Overview secure firmware install (SFI) (AN4992)
for more details.
Refer to Table 6 and Table 7 for boot modes when TrustZone is disabled and
enabled respectively.
When TrustZone is enabled by setting the TZEN option bit, the boot space must be in the
secure area. The SECBOOTADD0[24:0] option bytes are used to select the boot secure
memory address.
A unique boot entry option can be selected by setting the BOOT_LOCK option bit, allowing
to boot always at the address selected by SECBOOTADD0[24:0] option bytes. All other boot
options are ignored.
The boot address option bytes allow any boot memory address to be programmed.
However, the allowed address space depends on the flash memory RDP level.
If the programmed boot memory address is out of the allowed memory mapped area when
RDP level is 0.5 or more, the default boot address is forced either in secure flash memory or
nonsecure flash memory, depending on TrustZone security option as described in the table
below.
VDDUSB
VDD11USB(1) USB transceiver
VSS
VDDDSI(2)
VDD11DSI(2) DSI transceiver
VSS
VDDIO2 domain
VDDIO2 VDDIO2
I/O ring
VSS PG[15:2]
VDD domain
VDDIO1 I/O ring
Reset block
Temperature sensor
3 x PLL VCORE domain
Internal RC oscillators
Core
Backup domain
VSW LSE crystal 32kHz oscillator
VBAT LSI 32 kHz oscillator
Backup registers
RCC_BDCR and PWR_BDCR1 registers
Notes: RTC
1. Only available on specific packages. TAMP
2. Only available on some devices. BKPSRAM
MSv66057V5
VDDA domain
A/D converters
VDDA Comparators
D/A converters
VSSA Operational amplifiers
Voltage reference buffer
VDDUSB
VDD11USB(1) USB transceiver
VSS
VDDIO2 domain
VDDIO2 VDDIO2
I/O ring
VSS PG[15:2]
VDD domain
VDDIO1 I/O ring
VCORE domain
Reset block
Temperature sensor Core
3 x PLL
VSS Internal RC oscillators SRAM1
SRAM2
Standby circuitry SRAM3
VDD (Wake-up logic, IWDG) SRAM4
SRAM5
VCORE
VCAP Digital
LDO regulator peripherals
Flash memory
Low-voltage detector
Backup domain
VBAT VSW LSE crystal 32kHz oscillator
LSI 32 kHz oscillator
Backup registers
RCC_BDCR and PWR_BDCR1 registers
RTC
Note:
TAMP
1. Only available on specific packages.
BKPSRAM
MSv66058V2
In this document, VDDIOx (with x = 1 or 2) refers to the I/O power supply. VDDIO1 is supplied
by VDD. VDDIO2 is the independent power supply for PG[15:2].
VSW = VDD when VDD is above VBOR0, and VSW = VBAT when VDD is below VBOR0.
During power-up and power-down phases, the following power sequence requirements
must be respected:
• When VDD is below 1 V, other power supplies (VDDA, VDDIO2, VDDUSB) must remain
below VDD + 300 mV.
• When VDD is above 1 V, all power supplies are independent.
• During the power-down phase, VDD can temporarily become lower than other supplies
only if the energy provided to the MCU remains below 1 mJ. This allows external
decoupling capacitors to be discharged with different time constants during the
power-down transient phase.
3.6
VDDX(1)
VDD
VBOR0
0.3
Invalid supply area VDDX < VDD + 300 mV VDDX independent from VDD
MSv47490V1
1. VDDX refers to any power supply among VDDA, VDDUSB, and VDDIO2.
Range 1
All
Range 2
Run Range 3 Yes ON(3) ON Any All except DSI and OTG_HS N/A
Reset pin,
64-, 56- or 8-Kbyte SRAM2
24 I/Os (WKUPx),
All other peripherals are powered BOR, RTC, TAMP,
off. IWDG
LPR
Powered off
OFF
off
Powered
1. LPR means that the main regulator is OFF and the low-power regulator is ON.
2. All peripherals can be active or clock gated to save power consumption.
3. The flash memory can be put in power-down and its clock can be gated off when executing from SRAM. One bank can also
be put in power-down mode.
4. The SRAM1, SRAM2, SRAM3, SRAM4, SRAM5 and BKPSRAM clocks can be gated on or off independently.
5. The SRAM can be individually powered off to save power consumption.
6. MSI and HSI16 can be temporary enabled upon peripheral request, for autonomous functions with DMA or wake-up from
Stop event detections.
7. The ADC4 conversion is functional and autonomous with DMA in Stop mode, and can generate a wake-up interrupt on
conversion events.
8. DAC1 is the digital-to-analog (D/A) converter controller instance name. This instance controls two D/A converters also
called "two channels". The DAC conversions are functional and autonomous with DMA in Stop mode.
9. U(S)ART and LPUART transmission and reception is functional and autonomous with DMA in Stop mode, and can
generate a wake-up interrupt on transfer events.
10. SPI transmission and reception is functional and autonomous with DMA in Stop mode, and can generate a wake-up
interrupt on transfer events.
11. I2C transmission and reception is functional and autonomous with DMA in Stop mode, and can generate a wake-up
interrupt on transfer events.
12. LPTIM is functional and autonomous with DMA in Stop mode, and can generate a wake-up interrupt on all events.
13. MDF and ADF are functional and autonomous with DMA in Stop mode, and can generate a wake-up interrupt on events.
14. GPDMA and LPDMA are functional and autonomous in Stop mode, and can generate a wake-up interrupt on events.
15. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when
exiting the Shutdown mode.
By default, the microcontroller is in Run mode after a system or a power reset. It is up to the
user to select one of the low-power modes described below:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
• Stop 0, Stop 1, Stop 2, and Stop 3 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. The SRAMs can be totally or partially switched off to further
reduce consumption. All clocks in the VCORE domain are stopped, the PLL, the MSI,
the HSI16, the HSI48 and the HSE crystal oscillators are disabled. The LSE or LSI is
still running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals are autonomous and can operate in Stop mode by requesting their
kernel clock and their bus (APB or AHB) when needed, in order to transfer data with
DMA (GPDMA1 in Stop 0 and Stop 1 modes, LPDMA1 in Stop 0, Stop 1 and Stop 2
modes). Refer to Low-power background autonomous mode (LPBAM) for more details.
LPBAM is not supported in Stop 3 mode.
In Stop 2 and Stop 3 modes, most of the VCORE domain is put in a lower leakage mode.
Stop 0 and Stop 1 modes offer the largest number of active peripherals and wake-up
sources, a smaller wake-up time but a higher consumption than Stop 2 mode.
In Stop 0 mode, the main regulator remains ON, allowing a very fast wake-up time but
with much higher consumption.
Stop 3 is the lowest power mode with full retention, but the functional peripherals and
sources of wake-up are reduced to the same ones than in Standby mode.
The system clock when exiting from Stop 0, Stop 1 or Stop 2 mode can be either MSI
up to 24 MHz or HSI16, depending on software configuration.
• Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off. The PLL, the
MSI, the HSI16, the HSI48 and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The BOR always remains active in Standby mode.
The state of each I/O during Standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAMs and register contents are lost except for registers
and backup SRAM in the Backup domain and Standby circuitry. Optionally, the full
SRAM2 or 8 Kbytes or 56 Kbytes can be retained in Standby mode, supplied by the
low-power regulator (Standby with SRAM2 retention mode).
The BOR can be configured in ultra-low-power mode to further reduce power
consumption during Standby mode.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), an RTC event occurs (alarm,
periodic wake-up, timestamp), or a tamper detection. The tamper detection can be
raised either due to external pins or due to an internal failure detection.
The system clock after wake-up is MSI up to 4 MHz.
• Shutdown mode
The lowest power consumption is achieved in Shutdown mode. The internal regulator
is switched off so that the VCORE domain is powered off. The PLL, the HSI16,
the HSI48, the MSI, the LSI and the HSE oscillators are also switched off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to backup domain is not supported (VBAT mode is not
supported).
SRAMs and register contents are lost except for registers in the backup domain as long
as VDD is present.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wake-up, timestamp), or a tamper detection.
The system clock after wake-up is MSI at 4 MHz.
capability
capability
capability
capability
capability
Peripheral Run Sleep VBAT
Wake-up
Wake-up
Wake-up
Wake-up
Wake-up
- - - - -
CPU Y - - - - - - - - - - - -
Flash memory O(2) O (2)
- - - - - - - - - - -
SRAM1 Y(3)(4) Y(3)(4) O(7) - O(7) - O(7) - - - - - -
O
SRAM2 Y(3)(4) Y(3)(4) O(7) O(5) O(7) - O(7) - (6) - - - -
capability
capability
capability
capability
capability
Peripheral Run Sleep VBAT
Wake-up
Wake-up
Wake-up
Wake-up
Wake-up
- - - - -
Clock security
O O O O O O O O O O O O O
system on LSE
Backup domain
voltage and
O O O O O O O O O O O O O
temperature
monitoring
RTC/TAMP O O O O O O O O O O O O O
Number of RTC
8 8 8 O 8 O 8 O 8 O 8 O 8
tamper pins
OTG_HS, UCPD O(11) O(11) - O(12) - - - - - - - - -
USARTx
O O O(13) O(13) - - - - - - - - -
(x=1,2,3,4,5,6)
Low-power UART
O O O(13) O(13) O(13) O(13) - - - - - - -
(LPUART1)
I2Cx (x = 1,2,4,5,6) O O O(14) O(14) - - - - - - - - -
I2C3 O O O(14) O (14) O(14) O(14) - - - - - - -
SPIx (x = 1,2) O O O(15) O(15) - - - - - - - - -
(15) O(15) O(15) O(15)
SPI3 O O O
FDCAN1 O O - - - - - - - - - - -
SDMMCx (x = 1,2) O O - - - - - - - - - - -
SAIx (x = 1,2) O O - - - - - - - - - - -
ADCx (x = 1,2) O O - - - - - - - - - - -
ADC4 O O O(16) O(16) O(16) O(16) - - - - - - -
DAC1 (2 converters) O O O - O - - - - - - - -
VREFBUF O O O - O - - - - - - - -
OPAMPx (x = 1,2) O O O - O - - - - - - - -
COMPx (x = 1,2) O O O O O O - - - - - - -
Temperature sensor O O O - O - - - - - - - -
Timers (TIMx) O O - - - - - - - - - - -
IWDG (independent
O O O O O O O O O O - - -
watchdog)
capability
capability
capability
capability
capability
Peripheral Run Sleep VBAT
Wake-up
Wake-up
Wake-up
Wake-up
Wake-up
- - - - -
WWDG (window
O O - - - - - - - - - - -
watchdog)
SysTick timer O O - - - - - - - - - - -
MDF1 (multi-function
O O O(18) O(18) - - - - - - - - -
digital filter)
ADF1 (audio digital
O O O(18) O(18) O(18) O(18) - - - - - - -
filter)
LTDC O O - - - - - - - - - - -
DSI O O - - - - - - - - - - -
GFXMMU O O - - - - - - - - - - -
GPU2D O O - - - - - - - - - - -
DCMI (digital camera
O O - - - - - - - - - - -
interface)
PSSI (parallel
synchronous slave O O
interface)
CORDIC
O O - - - - - - - - - - -
coprocessor
FMAC (filter
mathematical O O - - - - - - - - - - -
accelerator)
TSC (touch sensing
O O - - - - - - - - - - -
controller)
RNG (true random
O O - - - - - - - - - - -
number generator)
AES and secure AES O O - - - - - - - - - - -
PKA (public key
O O - - - - - - - - - - -
accelerator)
OTFDEC (on-the-fly
O O - - - - - - - - - - -
decryption)
HASH accelerator O O - - - - - - - - - - -
CRC calculation unit O O - - - - - - - - - - -
- 24 - 24 - 24
GPIOs O O O O O O (19) (19) (20) -
pins pins pins
1. Y = yes (enabled). O = optional (disabled by default, can be enabled by software). - = not available.
Gray cells highlight the wake-up capability in each mode.
2. The flash memory can be configured in power-down mode. By default, it is not in power-down mode.
3. The SRAMs can be powered on or off independently.
4. The SRAM clock can be gated on or off independently.
5. ECC error interrupt or NMI wake-up from Stop mode.
Some of the PWR configuration bits security is defined by the security of other peripherals:
• The VOS (voltage scaling) configuration is secure when the system clock selection is
secure in RCC.
• The I/O pull-up/pull-down in Standby mode configuration is secure when the
corresponding GPIO is secure.
• Auxiliary clock source: two ultra-low-power clock sources that can be used to drive
the real-time clock:
– LSE (32.768 kHz low-speed external crystal), supporting three drive capability
modes. The LSE can also be configured in bypass mode for an external clock.
– LSI (32 kHz low-speed internal RC), also used to drive the independent watchdog.
The LSI clock accuracy is ±5% accuracy. The LSI clock can be divided by 128 to
output a 250 Hz as source clock.
• Peripheral clock sources: several peripherals have their own independent clock
whatever the system clock. Three PLLs, each having three independent outputs
allowing the highest flexibility, can generate independent clocks for the ADC, USB,
SDMMC, RNG, MDF, ADF, FDCAN1, OCTOSPIs, HSPI, LTDC, DSI and SAIs.
• Startup clock: after reset, the microcontroller restarts by default with MSI. The prescaler
ratio and clock source can be changed by the application program as soon as the code
execution starts.
• CSS (clock security system): this feature can be enabled by software. If a HSE clock
failure occurs, the master clock automatically switches to HSI16 and a software
interrupt is generated if enabled. LSE failure can also be detected and generates
an interrupt.
• Clock-out capability:
– MCO (microcontroller clock output): it outputs one of the internal clocks for
external use by the application.
– LSCO (low-speed clock output): it outputs LSI or LSE in all low-power modes
(except VBAT mode).
Several prescalers allow AHB and APB frequencies configuration. The maximum frequency
of the AHB and the APB clock domains is 160 MHz.
HSI48
HSI48 RC 48 MHz HSI16 x6
SYSCLK To I2Cx
MSIK (x = 1,2,4,5,6)
MSIS
PLL1 /M HSI16
pll1_p_ck HSE LSI
VCO /P LSE To LPTIM2
pll1_q_ck HSI16
/Q
pll1_r_ck HSE
/N /R pll1_q_ck
pll2_p_ck To FDCAN1
SHSI RC MSIK
/2 HSI16
SYSCLK To SPI1
pll1_p_ck
pll3_q_ck x2
MSIK To ADF1 and MDF1
AUDIOCLK
pll1_p_ck
pll2_p_ck x2
pll3_p_ck To SAIx
pll1_p_ck HSI16 (X = 1,2)
MSIK To SDMMCx
HSI48 ICLK (X = 1,2)
pll1_q_ck
pll2_q_ck
HSI16
/2
To RNG
PCLK3
SYSCLK APB3
pll1_q_ck PRESC To APB3 peripherals
pll2_q_ck To HSPI / 1,2,4,8,16
pll3_r_ck
MSIK To I2C3
pll2_r_ck HSI16
pll3_r_ck To LTDC
MSIK To SPI3
pll3_p_ck HSI16
DSI PHY To DSI
HSE
PLL
MSIK
HSI16 To LPUART1
HSE LSE
pll1_p_ck OTG_HS
pll2_r_ck
HSE / 2 PHY PLL To OTG_HS
pll1_p_ck / 2 HSE To ADC1, ADC2,
HSI16 LSI ADC4 and DAC1
MSIK
LSE
DAC1 sample and hold clock
MSv65077V1
• Privileged/unprivileged support:
– Support for privileged and unprivileged DMA transfers, independently at
channel level
– Privileged-aware AHB slave port.
Autonomous mode and wake-up GPDMA1 in Sleep, Stop 0 and Stop 1 modes
• Per channel event generation, on any of the following events: transfer complete, or
half-transfer complete, or data transfer error, or user setting error, and/or update
linked-list item error, or completed suspension
• Per channel interrupt generation, with separately programmed interrupt enable
per event
• Four concurrent DMA channels:
– Intra-channel DMA transfers chaining via programmable linked-list into memory,
supporting two execution modes: run-to-completion and link step mode
– Intra-channel and inter-channel DMA transfers chaining via programmable DMA
input triggers connection to DMA task completion events
• Per linked-list item within a channel:
– Separately programmed source and destination transfers
– Programmable data handling between source and destination: byte-based
padding or truncation, sign extension and left/right realignment
– Programmable number of data bytes to be transferred from the source, defining
the block level
– Linear source and destination addressing: either fixed or contiguously
incremented addressing, programmed at a block level, between successive
single transfers
– Programmable DMA request and trigger selection
– Programmable DMA half-transfer and transfer complete events generation
– Pointer to the next linked-list item and its data structure in memory, with automatic
update of the DMA linked-list control registers
• Debug:
– Channel suspend and resume support
– Channel status reporting and event flags
• TrustZone support
– Support for secure and nonsecure DMA transfers, independently at a first channel
level, and independently at a source/destination and link sub-levels
– Secure and nonsecure interrupts reporting, resulting from any of the respectively
secure and nonsecure channels
– TrustZone-aware AHB slave port, protecting any DMA secure resource (register,
register field) from a nonsecure access
• Privileged/unprivileged support:
– Support for privileged and unprivileged DMA transfers, independently at
channel level
– Privileged-aware AHB slave port.
Autonomous mode and wake-up LPDMA1 in Sleep, Stop 0, Stop 1 and Stop 2 modes
foreground, and memory-to memory with pixel format conversion, blending and fixed
color background
• Area filling with a fixed color
• Copy from an area to another
• Copy with pixel format conversion between source and destination images
• Copy from two sources with independent color format and blending
• Output buffer byte swapping to support refresh of displays through parallel interface
• Abort and suspend of DMA2D operations
• Watermark interrupt on a user programmable destination line
• Interrupt generation on bus error or access conflict
• Interrupt generation on process completion
The OCTOSPI supports the following protocols with associated frame formats:
• the standard frame format with the command, address, alternate byte, dummy cycles
and data phase
• the HyperBus™ frame format
The OCTOSPI offers the following features:
• Three functional modes: Indirect, Status-polling, and Memory-mapped
• Read and write support in Memory-mapped mode
• Supports for single, dual, quad and octal communication
• Dual-quad mode, where eight bits can be sent/received simultaneously by accessing
two quad memories in parallel.
• SDR (single-data rate) and DTR (double-transfer rate) support
• Data strobe support
• Fully programmable opcode
• Fully programmable frame format
• HyperBus support
• Integrated FIFO for reception and transmission
• 8-, 16-, and 32-bit data accesses allowed
• DMA channel for Indirect mode operations
• Interrupt generation on FIFO threshold, timeout, operation complete, and access error
a SDMMC or Octo-SPI interface. The delay is voltage and temperature dependent, that may
require the application to re-configure and recenter the output clock phase with the received
data.
The delay block main features are:
• Input clock frequency ranging from 25 to 160 MHz
• Up to 12 oversampling phases
The HSPI registers can be configured as secure through the TZSC controller.
VREFINT +
VREF+
VSSA
MSv64430V2
The internal voltage reference buffer supports four voltages: 1.5 V, 1.8 V, 2.048 V and 2.5 V.
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is off.
The VREF+ pin is double-bonded with VDDA on some packages. In these packages the
internal voltage reference buffer is not available.
3.36 Multi-function digital filter (MDF) and audio digital filter (ADF)
The table below lists the set of features implemented into the MDF and the ADF.
The ADF converts an input data stream into clean decimated digital data words. This
conversion is done thanks to low-pass digital filters and decimation blocks. In addition it is
possible to insert a high-pass filter or a DC offset correction block.
The conversion speed and resolution are adjustable according to configurable parameters
for digital processing: filter type, filter order, decimation ratio. The maximum output data
resolution is up to 24 bits. There are two conversion modes: single conversion and
continuous modes. The data can be automatically stored in a system RAM buffer through
DMA, thus reducing the software overhead.
A SAD (sound activity detector) is available for the detection of “speech-like” signals. The
SAD is connected at the output of DFLT0. Several parameters can be programmed to adjust
properly the SAD to the sound environment. The SAD can strongly reduce the power
consumption by preventing the storage of samples into the system memory as long as the
observed signal does not match the programmed criteria.
A flexible trigger interface can be used to control the start of conversion of the ADF.
All the digital processing is performed using only the kernel clock. The ADF requests the bus
interface clock (AHB clock) only when data must be transfered or when a specific event
requests the attention of the system processor.
The ADF main features are:
• AHB interface
• One serial digital input:
– Configurable SPI interface to connect various digital sensors
– Configurable Manchester coded interface support
– Compatible with PDM interface to support digital microphones
• Two common clocks input/output for Σ∆ modulators
• Flexible BSMX for connection between filters and digital inputs
• One flexible digital filter path, including:
– A configurable CIC filter:
- Can be configured in Sinc4 filter
- Can be configured in Sinc5 filter
- Adjustable decimation ratio
– A reshape filter to improve the out-off band rejection and in-band ripple
– A high-pass filter to cancel the DC offset
– Gain control
– Saturation blocks
• Clock absence detector
• Sound activity detector
• 16- or 24-bit signed output data resolution
• Continuous or single conversion
• Possibility to delay independently each bitstream
• Various trigger possibilities
• Autonomous mode in Stop 0, Stop 1 and Stop 2 modes
• Wake-up from Stop with all interrupts
• DMA can be used to read the conversion data
• Interrupts services
• Up to eight capacitive sensing channels can be acquired in parallel offering a very good
response time
• Spread spectrum feature to improve system robustness in noisy environments
• Full hardware management of the charge transfer acquisition sequence
• Programmable charge transfer frequency
• Programmable sampling capacitor I/O pin
• Programmable channel I/O pin
• Programmable max count value to avoid long acquisition when a channel is faulty
• Dedicated end of acquisition and max count error flags with interrupt capability
• One sampling capacitor for up to three capacitive sensing channels to reduce the
system components
• Compatible with proximity, touchkey, linear and rotary touch sensor implementation
• Designed to operate with STMTouch touch sensing firmware library
Note: The number of capacitive sensing channels is dependent on the size of the packages and
subject to I/O availability.
channel attacks. The SAES can share its current key register information with the faster
AES using a dedicated hardware bus.
The SAES and the AES can be used to both encrypt and decrypt data using the AES
algorithm. It is a fully compliant implementation of the advanced encryption standard (AES)
as defined by Federal Information Processing Standards Publication (FIPS PUB 197,
Nov 2001).
Multiple chaining modes are supported for key sizes of 128 or 256 bits. ECB and CBC
chaining is supported by both SAES and AES, while CTR, CCM, GCM and GMAC chaining
is only supported by the AES.
SAES and AES support DMA single transfers for incoming and outgoing data (two DMA
channels required).
The SAES supports the selection of all the following key sources, while the AES support
only the first:
• 256-bit software key, written by the application in the key registers (write only)
• 256-bit derived hardware unique key (DHUK), computed inside the SAES engine from
a non-volatile OTP based root hardware unique key (RHUK)
• 256-bit boot hardware key (BHK), stored in tamper-resistant secure backup registers,
written by a secure code during boot. Once written, this key cannot be read or write by
any application until the next product reset.
• XOR of DHUK (provisioned chip secret) and BHK (software secret)
DHUK, BHK and their XOR are not visible by any software (even secure).
Note: 128-bit key size can also be selected.
BHK key is cleared in case of tamper or RDP regression.
When the SAES is secure (respectively nonsecure), DHUK secure (respectively nonsecure)
is used.
The SAES peripheral is connected by hardware to the true random number generator RNG
(for side-channel resistance).
The SAES and AES peripherals support:
• Compliant implementation of standard NIST Special Publication 197, Advanced
Encryption Standard (AES) and Special Publication 800-38A, Recommendation for
Block Cipher Modes of Operation
• 128-bit data block processing
• Support for cipher keys length of 128-bit and 256-bit
• Encryption and decryption with multiple chaining modes:
– Electronic codebook (ECB) mode
– Cipher block chaining (CBC) mode
• Additional chaining modes supported by AES only:
– Counter (CTR) mode
– Galois counter mode (GCM)
– Galois message authentication code (GMAC) mode
– Counter with CBC-MAC (CCM) mode
• 528 or 743 clock cycle latency in ECB encryption mode for SAES processing one
128-bit block of data with, respectively, 128-bit or 256-bit key
• 51 or 75 clock cycle latency in ECB encryption mode for AES processing one 128-bit
block of data with, respectively, 128-bit or 256-bit key
• Integrated round key scheduler to compute the last round key for AES ECB/CBC
decryption
• 256-bit register for storing the cryptographic key (four 32-bit registers), with key
atomicity enforcement
• 128-bit registers for storing initialization vectors (four 32-bit registers)
• One 32-bit input buffer and one 32-bit output buffer
• Automatic data flow control with support of single-transfer direct memory access (DMA)
using two channels (one for incoming data, one for processed data)
• Data swapping logic to support 1-, 8-, 16- or 32-bit data
• Possibility for software to suspend a message if the SAES/AES needs to process
another message with a higher priority (suspend/resume operation)
• SAES additional features:
– Security context enforcement for keys
– Hardware secret key encryption/ decryption (wrapped key mode) and sharing with
faster AES peripheral (Shared key mode)
– Protection against differential power analysis (DPA) and related side-channel
attacks
– Optional hardware loading of two hardware secret keys (BHK, DHUK) that can be
XORed together
On top of standard AES encryption and decryption with a key loaded by software, SAES
peripheral allows the following advanced use cases:
• Allow or deny the sharing of a key between a secure and a nonsecure application,
enforced by hardware
• Encrypt once a key using side-channel resistant AES, then share it to a faster AES
engine by decrypting it (Shared key mode)
• On-chip encrypted storage using chip-unique secret DHUK
• Transport key generation by encrypting the device public unique ID with the application
secret BHK
• Binding of device secure storage keys, using the silicon unique secret key (DHUK)
XORed with the boot secret key (BHK). If BHK is lost, the whole device secure storage
is lost.
Note: Encrypted storage or derived keys that are using DHUK or BHK, cannot be used anymore
when a security breach is detected.
• Automatic data flow control with support of direct memory access (DMA) using one
channel. Single or fixed burst of 4 supported.
• Interruptible message digest computation, on a per-32-bit word basis
– Re-loadable digest registers
– Hashing computation suspend/resume mechanism, including using DMA
Any integer
Advanced Up, down,
TIM1, TIM8 16 bits between 1 and Yes 4 3
control Up/down
65536
Any integer
General- TIM2, TIM3, Up, down,
32 bits between 1 and Yes 4 No
purpose TIM4, TIM5 Up/down
65536
Any integer
General-
TIM15 16 bits Up between 1 and Yes 2 1
purpose
65536
Any integer
General- TIM16,
16 bits Up between 1 and Yes 1 1
purpose TIM17
65536
Any integer
Basic TIM6, TIM7 16 bits Up between 1 and Yes 0 No
65536
• TIM15, 16 and 17
They are general-purpose timers with mid-range features.
They have 16-bit auto-reload upcounters and 16-bit prescalers.
– TIM15 has two channels and one complementary channel
– TIM16 and TIM17 have one channel and one complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse
mode output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in Debug mode.
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month
• Two programmable alarms
• On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy
• Timestamp feature that can be used to save the calendar content. This function can be
triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode
• 17-bit auto-reload wake-up timer (WUT) for periodic events with programmable
resolution and period
• TrustZone support:
– RTC fully securable
– Alarm A, alarm B, wake-up timer and timestamp individual secure or nonsecure
configuration
– Alarm A, alarm B, wake-up timer and timestamp individual privileged protection
The RTC is supplied through a switch that takes power either from the VDD supply when
present or from the VBAT pin.
The RTC clock sources can be one of the following:
• 32.768 kHz external crystal (LSE)
• external resonator or oscillator (LSE)
• internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
• high-speed external clock (HSE), divided by a prescaler in the RCC.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes except Shutdown mode.
All RTC events (alarm, wake-up timer, timestamp) can generate an interrupt and wake up
the device from the low-power modes.
Host-mode features:
• External charge pump for VBUS voltage generation
• Up to 16 host channels (pipes): each channel is dynamically reconfigurable to allocate
any type of USB transfer
• Built-in hardware scheduler holding:
– Up to 16 interrupt plus isochronous transfer requests in the periodic hardware
queue
– Up to 16 control plus bulk transfer requests in the non-periodic hardware queue
• Management of a shared Rx FIFO, a periodic Tx FIFO and a non periodic Tx FIFO for
efficient usage of the USB data RAM
Peripheral-mode features:
• 1 bidirectional control endpoint0
• 8 IN endpoints (EPs) configurable to support bulk, interrupt or isochronous transfers
• 8 OUT endpoints configurable to support bulk, interrupt or isochronous transfers
• Management of a shared Rx FIFO and a Tx-OUT FIFO for efficient usage of the USB
data RAM
• Management of up to 9 dedicated Tx-IN FIFOs (one for each active IN EP) to put less
load on the application
• Support for the soft disconnect feature
PH3-BOOT0
VDD11
PC12
PC10
PC11
PA15
PA14
VDD
VSS
PD2
PB8
PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VBAT 1 48 VDDUSB
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA13
PC15-OSC32_OUT 4 45 PA12
PH0-OSC_IN 5 44 PA11
PH1-OSC_OUT 6 43 PA10
NRST 7 42 PA9
PC0 8 41 PA8
PC1 9 LQFP64 40 PC9
PC2 10 39 PC8
PC3 11 38 PC7
VSSA 12 37 PC6
VDDA 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 VDD
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VSS
VDD
PB0
PB1
PB2
VLXSMPS
PB10
VDDSMPS
VSSSMPS
VSS
PA3
PA4
PA5
PA6
PA7
VDD11
MSv62929V1
PH3-BOOT0
PC12
PC10
PC11
PA15
PA14
VDD
VSS
PD2
PB9
PB8
PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VBAT 1 48 VDDUSB
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA13
PC15-OSC32_OUT 4 45 PA12
PH0-OSC_IN 5 44 PA11
PH1-OSC_OUT 6 43 PA10
NRST 7 42 PA9
PC0 8 41 PA8
PC1 9 LQFP64 40 PC9
PC2 10 39 PC8
PC3 11 38 PC7
VSSA 12 37 PC6
VDDA 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 PB12
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VSS
VDD
PC4
PC5
PB0
PB1
PB2
PB10
VCAP
VSS
VDD
PA3
PA4
PA5
PA6
PA7
MSv62923V1
PH3-BOOT0
VDD11
PC10
PC12
PC11
PA14
PA15
VDD
VSS
PD0
PD1
PD3
PD2
PD4
PD6
PD5
PD7
PB4
PB3
PB6
PB5
PB7
PB9
PB8
PE0
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 VDDUSB
PE5 4 72 PA13
PE6 5 71 PA12
VBAT 6 70 PA11
PC13 7 69 PA10
PC14-OSC32_IN 8 68 PA9
PC15-OSC32_OUT 9 67 PA8
VSS 10 66 PC9
VDD 11 65 PC8
PH0-OSC_IN 12 64 PC7
PH1-OSC_OUT 13 LQFP100 63 PC6
NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
VSSA 19 57 PD10
VREF+ 20 56 PD9
VDDA 21 55 PD8
PA0 22 54 PB15
PA1 23 53 PB14
PA2 24 52 PB13
PA3 25 51 VDD
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VSS
VSSSMPS
VDDSMPS
VLXSMPS
PB10
PE14
PE15
PE13
PE12
PE10
PE8
PE9
PE7
PB2
PB1
PB0
VDD
VSS
VDD11
PB11
PE11
PA7
PA6
PA5
PA4
MSv62930V1
PH3-BOOT0
PC10
PC12
PC11
PA14
PA15
VDD
VSS
PD0
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PB3
PB4
PB5
PB6
PB7
PB8
PB9
PE0
PE1
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 VDDUSB
PE5 4 72 PA13
PE6 5 71 PA12
VBAT 6 70 PA11
PC13 7 69 PA10
PC14-OSC32_IN 8 68 PA9
PC15-OSC32_OUT 9 67 PA8
VSS 10 66 PC9
VDD 11 65 PC8
PH0-OSC_IN 12 64 PC7
PH1-OSC_OUT 13 LQFP100 63 PC6
NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
VSSA 19 57 PD10
VREF- 20 56 PD9
VREF+ 21 55 PD8
VDDA 22 54 PB15
PA0 23 53 PB14
PA1 24 52 PB13
PA2 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VDD
VSS
VCAP
PB10
PE15
PE14
PE13
PE12
PE10
PE9
PE8
PE7
PB2
PB1
PB0
PC5
PC4
VDD
VSS
PE11
PA7
PA6
PA5
PA4
PA3
MSv62924V1
1 2 3 4 5 6 7 8 9 10 11 12
A PE5 PE3 PE1 PB9 PB6 PG12 PD6 PD5 PD2 PC11 PA15 VDDUSB
PH3-
B VBAT PE4 PE2 VDD11
BOOT0
PB4 PG9 PD4 PD1 PC12 PC10 PA12
PC14-
C OSC32 PE6 PC13 PE0 PB8 PB3 PG10 PD3 PD0 PA13 PA14 PA11
_IN
PC15-
D OSC32_ PF0 PF3 VDD PB7 PB5 PD7 VDDIO2 VDD PA9 PA10 PA8
OUT
PH0-
F OSC_IN
PF5 PC2 PC3 VSS VDD PG6 PG7 PC6 PG8
PH1-OSC
G _OUT
NRST PC1 PA1 VDD VSS PG4 PG2 PG3 PG5
OPAMP1
H VSSA PC0
_VINM
VSS VSS PD14 PD13 PD15
J VREF+ PA0 PC5 VDD PF14 PE8 PE10 PE12 VDD PD9 PD11 PD12
K VDDA PA2 PA7 PB2 PF11 PG1 PE7 PE14 PB10 PB13 PB14 PB15
VSS
L PA3 PA6 PA4 PB1 PF12 PF15 PE11 PE15 PB11
SMPS
PB12 PD8
MSv62931V2
1 2 3 4 5 6 7 8 9 10 11 12
A PE5 PE3 PE1 PB9 PB6 PG12 PD6 PD5 PD2 PC11 PA15 VDDUSB
PH3-
B VBAT PE4 PE2 PG15
BOOT0
PB4 PG9 PD4 PD1 PC12 PC10 PA12
PC14-
C OSC32 PE6 PC13 PE0 PB8 PB3 PG10 PD3 PD0 PA13 PA14 PA11
_IN
PC15-
D OSC32_ PF0 PF3 VDD PB7 PB5 PD7 VDDIO2 VDD PA9 PA10 PA8
OUT
PH0-
F OSC_IN
PF5 PC2 PC3 VSS VDD PG6 PG7 PC6 PG8
PH1-
G OSC_ NRST PC1 PA1 VDD VSS PG4 PG2 PG3 PG5
OUT
OPAMP1
H VSSA PC0
_VINM
VSS VSS PD14 PD13 PD15
J VREF+ PA0 PC5 VDD PF14 PE8 PE10 PE12 VDD PD9 PD11 PD12
K VDDA PA2 PA7 PB2 PF11 PG1 PE7 PE14 PB10 PB13 PB14 PB15
L PA3 PA6 PA4 PB1 PF12 PF15 PE11 PE15 PB11 VCAP PB12 PD8
OPAMP2
M PA5
_VINM
PC4 PB0 PF13 PG0 PE9 PE13 PG14 PG13 PG11 PD10
MSv62925V2
PH3-BOOT0
VDDIO2
VDD11
PG15
PG14
PG13
PG12
PG10
PC12
PC10
PC11
PA15
PA14
VDD
VDD
VSS
VSS
PG9
VSS
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
109
119
118
117
116
115
114
113
112
110
111
PE2 1 108 VDD
PE3 2 107 VSS
PE4 3 106 VDDUSB
PE5 4 105 PA13
PE6 5 104 PA12
VBAT 6 103 PA11
PC13 7 102 PA10
PC14-OSC32_IN 8 101 PA9
PC15-OSC32_OUT 9 100 PA8
PF0 10 99 PC9
PF1 11 98 PC8
PF2 12 97 PC7
PF3 13 96 PC6
PF4 14 95 VDDIO2
PF5 15 94 VSS
VSS 16 93 PG8
VDD 17 92 PG7
PF6 18 91 PG6
PF7 19 LQFP144 90 PG5
PF8 20 89 PG4
PF9 21 88 PG3
PF10 22 87 PG2
PH0-OSC_IN 23 86 PD15
PH1-OSC_OUT 24 85 PD14
NRST 25 84 VDD
PC0 26 83 VSS
PC1 27 82 PD13
PC2 28 81 PD12
PC3 29 80 PD11
VSSA 30 79 PD10
VREF+ 31 78 PD9
VDDA 32 77 PD8
PA0 33 76 PB15
PA1 34 75 PB14
PA2 35 74 PB13
PA3 36 73 VDD
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
VSS
VSS
VDD
PB0
PB1
PB2
PF12
PF13
PE8
VSS
VDD
PF14
PF15
PG0
PG1
PE7
PE9
VLXSMPS
VDD
PE10
PE12
PE13
PE14
PE15
PB10
VDDSMPS
VSSSMPS
VSS
PA4
PA5
PA6
PA7
PF11
PE11
PB11
VDD11
MSv62932V1
PH3-BOOT0
VDDIO2
PG15
PG14
PG13
PG12
PG10
PC12
PC10
PG11
PC11
PA15
PA14
VDD
VDD
VSS
VSS
PG9
VSS
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
109
119
118
117
116
115
114
113
112
110
111
PE2 1 108 VDD
PE3 2 107 VSS
PE4 3 106 VDDUSB
PE5 4 105 PA13
PE6 5 104 PA12
VBAT 6 103 PA11
PC13 7 102 PA10
PC14-OSC32_IN 8 101 PA9
PC15-OSC32_OUT 9 100 PA8
PF0 10 99 PC9
PF1 11 98 PC8
PF2 12 97 PC7
PF3 13 96 PC6
PF4 14 95 VDDIO2
PF5 15 94 VSS
VSS 16 93 PG8
VDD 17 92 PG7
PF6 18 91 PG6
PF7 19 LQFP144 90 PG5
PF8 20 89 PG4
PF9 21 88 PG3
PF10 22 87 PG2
PH0-OSC_IN 23 86 PD15
PH1-OSC_OUT 24 85 PD14
NRST 25 84 VDD
PC0 26 83 VSS
PC1 27 82 PD13
PC2 28 81 PD12
PC3 29 80 PD11
VSSA 30 79 PD10
VREF- 31 78 PD9
VREF+ 32 77 PD8
VDDA 33 76 PB15
PA0 34 75 PB14
PA1 35 74 PB13
PA2 36 73 PB12
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
VSS
PG0
PG1
VDD
PC4
PC5
PB0
PB1
PB2
PF12
VSS
VDD
PF13
PF14
PF15
PE7
PE8
PE9
VSS
VSS
VDD
PE10
PE12
PE13
PE14
PE15
PB10
VCAP
VDD
PA3
PA4
PA5
PA6
PA7
PF11
PE11
MSv62926V1
1 2 3 4 5 6 7 8 9 10 11 12 13
PC14-
E PA11 PA10 PD1 PG10 PB6 PE6
OSC32_IN
PC15-
PH3-
G PC8 PA8 PD0 PG13
BOOT0
PF0 OSC32
_OUT
PH0-
R VDD PD12 PB13 PF11 PA2 PF10
OSC_IN
PH1-
U PD13 PD10 PE9 PF14 PA6 PC3
OSC_OUT
MSv71166V1
1 2 3 4 5 6 7 8 9 10 11 12 13
PC14-
A VDDUSB VDD PC12 VDD PB5 VDD
OSC32_IN
PC15-
B VDD11 PA15 PD4 PB3 VDD11 OSC32_O
UT
PH3-
J PG7 PC7 PC11
BOOT0
PE4 PF6 DSI_CKP
PH1-
V VSS PB14 PE9 PF12 PA1
OSC_OUT
PH0-
W PD10 PD8 PB10 PG1 PB1 PA0
OSC_IN
MSv71167V1
A PE2 PI6 VDD VDD11 PG15 VDDIO2 PG9 VDD PC11 PA15 VDD PI1 PH15
B VDD VSS PI5 VSS PB6 PB4 PD6 VSS PD0 PI4 VSS PI0 PH12
PH3-
C VBAT PE4 PI7 PE1
BOOT0
PB5 PG10 PD4 PC10 PA14 PH14 PH13 PH10
PC14-
D OSC32 PE5 PE3 PE0 PB9 PB3 PD7 PD3 PH11 PI3 PI2 PH8 VDD
_IN
PC15-
E OSC32_ PF0 PC13 PE6 PB8 PG12 PD5 PC12 PH9 PH4 PH6 VSS VDDUSB
OUT
F PF8 VSS PF1 PF2 PB7 PD1 PD2 PH7 PH5 PH2 PA10 PA13 PA12
G VDD PF7 PF9 PF5 PF3 PF4 PA8 PG7 PC9 PC8 PA9 PC7 PA11
PH0- OPAMP2
H OSC_IN
VSS NRST PF10
_VINM
PF6 PG1 PE10 PG8 PG6 PG4 VDDIO2 PC6
PH1-
J OSC_ PC0 PC1 PC2 PA7 PG0 PE9 PG3 PG5 PD14 PD15 VSS VDD
OUT
K PC3 VSSA PA0 PA5 PB0 PF12 PE8 PE14 PB10 PD12 PD10 PD13 PG2
L VREF+ VDDA PA1 PC4 PB2 PF14 PE7 PE13 PB11 PB12 PB15 PD8 PD9
OPAMP1 VSS
M _VINM
PA2 VSS PC5 PF11 PF13 VSS PE11 PE15
SMPS
VSS PB14 PD11
VLX VDD
N PA4 PA3 VDD PA6 PB1 PF15 VDD PE12
SMPS SMPS
VDD11 VDD PB13
MSv62933V3
A PE2 PI6 VDD VCAP PG15 VDDIO2 PG9 VDD PC11 PA15 VDD PI1 PH15
B VDD VSS PI5 VSS PB6 PB4 PD6 VSS PD0 PI4 VSS PI0 PH12
PH3-
C VBAT PE4 PI7 PE1
BOOT0
PB5 PG10 PD4 PC10 PA14 PH14 PH13 PH10
PC14-
D OSC32_ PE5 PE3 PE0 PB9 PB3 PD7 PD3 PH11 PI3 PI2 PH8 VDD
IN
PC15-
E OSC32_ PF0 PC13 PE6 PB8 PG12 PD5 PC12 PH9 PH4 PH6 VSS VDDUSB
OUT
F PF8 VSS PF1 PF2 PB7 PD1 PD2 PH7 PH5 PH2 PA10 PA13 PA12
G VDD PF7 PF9 PF5 PF3 PF4 PA8 PG7 PC9 PC8 PA9 PC7 PA11
PH0- OPAMP2
H OSC_IN
VSS NRST PF10
_VINM
PF6 PG1 PE10 PG8 PG6 PG4 VDDIO2 PC6
PH1-
J OSC_ PC0 PC1 PC2 PA7 PG0 PE9 PG3 PG5 PD14 PD15 VSS VDD
OUT
K PC3 VSSA PA0 PA5 PB0 PF12 PE8 PE14 PB10 PD12 PD10 PD13 PG2
L VREF+ VDDA PA1 PC4 PB2 PF14 PE7 PE13 PB11 PB12 PB15 PD8 PD9
OPAMP1
M _VINM
PA2 VSS PC5 PF11 PF13 VSS PE11 PE15 PG11 VSS PB14 PD11
N PA4 PA3 VDD PA6 PB1 PF15 VDD PE12 PG14 PG13 VCAP VDD PB13
MSv62927V3
A VDDUSB VDD11 VDD PA15 PD1 VDD PG13 VDDIO2 PB6 PE0 VDD11 VDD VDD
B PA12 PA13 VSS PH2 PC10 VSS PG9 VSS PB3 PB8 PE1 VSS VBAT
PC14-
C PA11 PA10 PA9 PA8 PC11 PD3 PD7 PG14 PB5 PB9 PI5 PE6
OSC32_IN
PC15-
VDD11
D USB
PC7 PC6 PC8 PC9 PA14 PD2 PD4 PG12 PB7 PI6 PC13 OSC32
_OUT
PH3-
E VDDIO2 VSS PJ0 PI15 PH4 PH7 PC12 PD5 PG11
BOOT0
PE3 VSSDSI DSI_D0P
F VDD VSS PI14 PI13 PG2 PG8 PH5 PD0 PD6 PG10 PE4 VSSDSI DSI_D0N
G VDD VSS PI11 PI12 PG6 PG5 PG7 PH8 PB4 PE2 PE5 VDDDSI DSI_CKP
H VDD VSS PI9 PI10 PG3 PG0 PB0 PH6 PG15 PF0 PF1 VSSDSI DSI_CKN
J PI4 VSS PI2 PI8 PG4 PG1 PF7 PF6 PI7 PF2 PF4 VDD11DSI DSI_D1P
K PI3 VSS PI1 PI0 PD15 PD13 PF14 PC1 PC0 PF8 PF5 PF3 DSI_D1N
L VDD VSS PH14 PH15 PD12 PE7 PB1 PA1 PC2 PF9 PF10 VSS VDD
PH0- PH1-
M VDD VSS PH12 PH13 PH9 PD11 PE10 PB2 PA2 PC3 NRST
OSC_IN OSC_OUT
N VDD VSS PH10 PH11 PD14 PE13 PE8 PF11 PA6 PA4 PA0 VREF- VSSA
P VDD VSS PD10 PD9 PD8 PB15 PE14 PE11 PF13 PC5 PA5 PA3 VREF+
R VDD VSS PB14 VSSSMPS PB11 PE15 PE12 VSS PF15 VSS PA7 VSS VDDA
T VDD VDD11 PB12 PB13 VDDSMPS VLXSMPS PB10 VDD PE9 VDD PF12 PC4 VDD
MSv66061V1
A VSS PE0 PB7 PB6 PG15 PG12 PG9 PD4 PD3 PC10 PA15 PA14 PA8 PC8 VSS
PC14-
PH3-
B OSC32 PE4 PE1
BOOT0
PB5 PG13 PG10 PD5 PD2 PC11 PH7 PH5 PA12 PA11 PC7
_IN
PC15-
C OSC32 VBAT PE3 PI5 PB9 PB8 PG11 PD6 PD1 PC12 PH6 PH4 PA13 PC9 PC6
_OUT
D PJ3 PJ2 PE5 PI7 PI6 PB4 PG14 PD7 PD0 PH8 PH2 PA10 PG7 PG6 PG3
E PJ7 PJ6 PJ4 PE6 PE2 VDD11 PB3 VDDIO2 VDDUSB VSS VDD11 PA9 PG8 PG5 PJ0
VDD11
F PJ10 PJ8 PJ5 PC13 VDD VSS VSS VDD VSS VSS
USB
PG4 PI15 PI14 PI13
G DSI_D0P DSI_D0N PJ11 PJ1 VDDDSI VSSDSI VSS VDDIO2 PG2 PI12 PI11 PI10
VDD11
H DSI_CKP VSSDSI PF0 PJ9
DSI
VSSDSI VSS VDD PI9 PI8 PI4 VSS
J DSI_CKN VSSDSI PF2 PF1 VDD VSS VSS VDD PI1 PI2 PI3 VSS
K DSI_D1N DSI_D1P PF4 PF3 VREF- VSSA VSS VSS VSS VSS VDD PD15 PH14 PH15 PI0
L PF10 PF5 PF7 PF9 VREF+ VDDA VDD VDD VDD VSS VDD PD11 PH10 PH11 PH13
M PC1 PF6 PF8 PA2 PA4 PB1 PF13 PE8 PE13 PB11 PB12 PB13 PD12 PH9 PH12
VSS
P PC2 PC0 PA1 PA3 PA6 PC5 PF11 PF15 PE9 PE10 PE11
SMPS
PB14 PD10 PD9
OPAMP1_ VDD
R VSS NRST
VINM
PA5 PA7 PC4 PB2 PF14 PG0 PE14 VLXSMPS
SMPS
VDD11 PB15 VSS
MSv66080V1
Unless otherwise specified in brackets below the pin name, the pin function
Pin name
during and after reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input/output pin
FT 5V-tolerant I/O
TT 3.6V-tolerant I/O
DSI 1.2 V I/O for DSI interface
RST Bidirectional reset pin with embedded weak pull-up resistor
Option for TT or FT I/Os(1)
_a I/O, with analog switch function supplied by VDDA
_c I/O with USB Type-C power delivery function
_d I/O with USB Type-C power delivery dead battery function
I/O structure
_f I/O, Fm+ capable
_h I/O with high-speed low-voltage mode
_o I/O with OSC32_IN/OSC32_OUT capability
_p I/O with differential clock capability CLKP/CLKN
_s I/O supplied only by VDDIO2
_t I/O with a function supplied by VSW
_u I/O, with USB function supplied by VDDUSB
_v I/O very high-speed capable
Notes Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.
Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions
1. The related I/O structures in the table below are a concatenation of various options. Examples: FT_hat, FT_fs, FT_u, TT_a.
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS
Pin name
Pin type
UFBGA132
Additional
Notes
TFBGA169
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TRACECLK,
TIM3_ETR, SAI1_CK1,
USART6_CK, LCD_R0,
TSC_G7_IO1,
- 1 B3 1 A13 D10 A1 G20 E5 - 1 B3 1 A1 PE2 I/O FT_ha - -
LPGPIO1_P14,
DS13543 Rev 2
FMC_A23,
SAI1_MCLK_A,
EVENTOUT
TRACED0, TIM3_CH1,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TRACED2, TIM3_CH3,
SAI1_CK2,
MDF1_CKI3, LCD_G0,
WKUP2,
TSC_G7_IO4,
- 4 A1 4 H10 F10 D2 G22 D3 - 4 A1 4 D2 PE5 I/O FT_hat - TAMP_IN8/
DCMI_D6/PSSI_D6,
TAMP_OUT7
FMC_A21,
DS13543 Rev 2
SAI1_SCK_A,
EVENTOUT
TRACED3, TIM3_CH4,
SAI1_D1, LCD_G1,
WKUP3,
DCMI_D7/PSSI_D7,
- 5 C2 5 E11 D12 E4 C24 E4 - 5 C2 5 E4 PE6 I/O FT_ht - TAMP_IN3/
FMC_A22,
TAMP_OUT6
SAI1_SD_A,
EVENTOUT
1 6 B1 6 C13 C13 C1 B25 C2 1 6 B1 6 C1 VBAT S - - - -
- - - - - - F2 B11 A1 - - - - F2 VSS S - - - -
WKUP2,
(2) RTC_TS/
2 7 C3 7 D12 E11 E3 D23 F4 2 7 C3 7 E3 PC13 I/O FT (3) EVENTOUT RTC_OUT1,
TAMP_IN1/T
AMP_OUT2
STM32U5Axxx
PC14- (2)
3 8 C1 8 E13 A13 D1 C26 B1 3 8 C1 8 D1 OSC32_IN I/O FT_o (3) EVENTOUT OSC32_IN
(PC14)
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
PC15-
OSC32_ (2)
4 9 D1 9 G13 B12 E1 D25 C1 4 9 D1 9 E1 I/O FT_o (3) EVENTOUT OSC32_OUT
OUT
(PC15)
I2C6_SDA, I2C2_SDA,
OCTOSPIM_P2_IO0,
DS13543 Rev 2
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM3_ETR,
ADF1_SDI0,
OCTOSPIM_P2_CLK,
- - E3 14 J11 N11 G6 J22 K3 - - E3 14 G6 PF4 I/O FT_hvp - MDF1_SDI0, -
USART6_RTS_DE,
UART5_RX, FMC_A4,
DS13543 Rev 2
EVENTOUT
LPTIM3_CH1,
OCTOSPIM_P2_NCLK
- - F2 15 L11 R11 G4 K21 L2 - - F2 15 G4 PF5 I/O FT_hvp - -
, MDF1_CKI0,
FMC_A5, EVENTOUT
- 10 F6 16 F12 - H2 B15 A15 - 10 F6 16 H2 VSS S - - - -
- 11 F7 17 L13 A11 G1 L26 F5 - 11 F7 17 G1 VDD S - - - -
TIM5_ETR, TIM5_CH1,
DCMI_D12/PSSI_D12,
OCTOSPIM_P2_NCS,
- - - 18 N11 J11 H6 J16 M2 - - - 18 H6 PF6 I/O FT_h - -
OCTOSPIM_P1_IO3,
SAI1_SD_B,
EVENTOUT
TIM5_CH2,
FDCAN1_RX,
STM32U5Axxx
- - - 19 N13 K10 G2 J14 L3 - - - 19 G2 PF7 I/O FT_h - OCTOSPIM_P1_IO2, -
SAI1_MCLK_B,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM5_CH3, PSSI_D14,
FDCAN1_TX,
- - - 20 P10 M10 F1 K19 M3 - - - 20 F1 PF8 I/O FT_h - OCTOSPIM_P1_IO0, -
SAI1_SCK_B,
EVENTOUT
TIM5_CH4, PSSI_D15,
DS13543 Rev 2
OCTOSPIM_P1_IO1,
- - - 21 P12 L9 G3 L20 L4 - - - 21 G3 PF9 I/O FT_h - SAI1_FS_B, -
TIM15_CH1,
EVENTOUT
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_IN1,
OCTOSPIM_P1_IO7,
I2C3_SCL(boot),
SPI2_RDY,
MDF1_SDI4, ADC1_IN1,
8 15 H2 26 N9 P10 J2 K17 P2 8 15 H2 26 J2 PC0 I/O FT_fha - USART6_CTS, ADC2_IN1,
DS13543 Rev 2
LPUART1_RX, ADC4_IN1
SDMMC1_D5,
SAI2_FS_A,
LPTIM2_IN1,
EVENTOUT
TRACED0,
LPTIM1_CH1,
SPI2_MOSI,
I2C3_SDA(boot),
MDF1_CKI4, ADC1_IN2,
9 16 G3 27 M8 L7 J3 K15 M1 9 16 G3 27 J3 PC1 I/O FT_fhav - USART6_CK, ADC2_IN2,
LPUART1_TX, ADC4_IN2
OCTOSPIM_P1_IO4,
SDMMC2_CK,
SAI1_SD_A,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_IN2,
SPI2_MISO,
MDF1_CCK1, ADC1_IN3,
10 17 F3 28 V12 Y12 J4 L18 P1 10 17 F3 28 J4 PC2 I/O FT_ha - USART6_RX, ADC2_IN3,
OCTOSPIM_P1_IO5, ADC4_IN3
LPGPIO1_P5,
DS13543 Rev 2
EVENTOUT
LPTIM1_ETR,
LPTIM3_CH1,
SAI1_D1, SPI2_MOSI,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM2_CH1, TIM5_CH1,
TIM8_ETR, SPI3_RDY, OPAMP1
USART2_CTS, _VINP,
UART4_TX, ADC1_IN5,
14 22 J2 33 T10 W11 K3 N22 N4 14 23 J2 34 K3 PA0 I/O FT_hat - OCTOSPIM_P2_NCS, ADC2_IN5,
SDMMC2_CMD, WKUP1,
DS13543 Rev 2
AUDIOCLK, TAMP_IN2/T
TIM2_ETR, AMP_OUT1
EVENTOUT
OPAMP1_V
- - H3 - - - M1 - R3 - - H3 - M1 I TT - - -
INM
LPTIM1_CH2,
TIM2_CH2, TIM5_CH2,
OPAMP1
I2C1_SMBA,
_VINM,
SPI1_SCK,
ADC1_IN6,
USART2_RTS_DE,
15 23 G4 34 W11 V10 L3 L16 P3 15 24 G4 35 L3 PA1 I/O FT_hat - ADC2_IN6,
UART4_RX,
WKUP3,
OCTOSPIM_P1_DQS,
TAMP_IN5/
LPGPIO1_P0,
TAMP_OUT4
TIM15_CH1N,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM2_CH3, TIM5_CH3,
SPI1_RDY, COMP1
USART2_TX(boot), _INP3,
LPUART1_TX, ADC1_IN7,
16 24 K2 35 R9 R9 M2 M17 M4 16 25 K2 36 M2 PA2 I/O FT_ha -
OCTOSPIM_P1_NCS, ADC2_IN7,
UCPD1_FRSTX1, WKUP4/
DS13543 Rev 2
TIM15_CH1, LSCO
EVENTOUT
TIM2_CH4, TIM5_CH4,
SAI1_CK1,
LPTIM2_CH1,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
124/390
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
CSLEEP, TIM2_CH1,
TIM2_ETR,
ADC1_IN10,
TIM8_CH1N,
ADC2_IN10,
PSSI_D14,
21 29 M1 40 AA11 AA11 K4 P21 R4 21 30 M1 41 K4 PA5 I/O TT_a - ADC4_IN10,
SPI1_SCK(boot),
DAC1_OUT2
USART3_RX,
, WKUP6
DS13543 Rev 2
LPTIM2_ETR,
EVENTOUT
CDSTOP, TIM1_BKIN,
TIM3_CH1,
TIM8_BKIN,
DCMI_PIXCLK/PSSI_P OPAMP2
DCK, _VINP,
SPI1_MISO(boot), ADC1_IN11,
22 30 L2 41 U9 U9 N4 N18 P5 22 31 L2 42 N4 PA6 I/O FT_ha -
USART3_CTS, ADC2_IN11,
LPUART1_CTS, ADC4_IN11,
OCTOSPIM_P1_IO3, WKUP7
LPGPIO1_P2,
TIM16_CH1,
EVENTOUT
OPAMP2
- - M2 - - - H5 - N5 - - M2 - H5 I TT - - -
_VINM
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
SRDSTOP,
TIM1_CH1N,
TIM3_CH2,
OPAMP2
TIM8_CH1N,
_VINM,
I2C3_SCL,
ADC1_IN12,
23 31 K3 42 Y10 P8 J5 R22 R5 23 32 K3 43 J5 PA7 I/O FT_fha - SPI1_MOSI(boot),
ADC2_IN12,
DS13543 Rev 2
USART3_TX,
ADC4_IN20,
OCTOSPIM_P1_IO2,
WKUP8
LPTIM2_CH2,
TIM17_CH1,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM1_CH2N,
TIM3_CH3,
TIM8_CH2N,
LPTIM3_CH1, OPAMP2
SPI1_NSS, _VOUT,
24 32 M4 43 T8 Y10 K5 H13 N6 26 35 M4 46 K5 PB0 I/O TT_ha - USART3_CK, ADC1_IN15,
DS13543 Rev 2
OCTOSPIM_P1_IO1, ADC2_IN15,
LPGPIO1_P9, ADC4_IN18
COMP1_OUT,
AUDIOCLK,
EVENTOUT
TIM1_CH3N,
TIM3_CH4,
TIM8_CH3N,
COMP1
LPTIM3_CH2,
_INM1,
MDF1_SDI0,
ADC1_IN16,
25 33 L4 44 W9 W9 N5 L14 M6 27 36 L4 47 N5 PB1 I/O FT_ha - USART3_RTS_DE,
ADC2_IN16,
LPUART1_RTS_DE,
ADC4_IN19,
OCTOSPIM_P1_IO0,
WKUP4
LPGPIO1_P3,
LPTIM2_IN1,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_CH1,
TIM8_CH4N, COMP1
I2C3_SMBA, _INP2,
SPI1_RDY, ADC1_IN17,
26 34 K4 45 AB10 M6 L5 M15 R7 28 37 K4 48 L5 PB2 I/O FT_hat -
MDF1_CKI0, LCD_B1, ADC2_IN17,
OCTOSPIM_P1_DQS, WKUP1,
DS13543 Rev 2
UCPD1_FRSTX1, RTC_OUT2
EVENTOUT
OCTOSPIM_P1_NCLK
, LCD_DE,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
I2C4_SCL, LCD_G0,
- - J5 51 U7 Y8 L6 K13 R8 - - J5 54 L6 PF14 I/O FT_fha - TSC_G8_IO1, ADC4_IN5
FMC_A8, EVENTOUT
I2C4_SDA, LCD_G1,
- - L6 52 Y8 U7 N6 R18 P8 - - L6 55 N6 PF15 I/O FT_fha - TSC_G8_IO2, ADC4_IN6
FMC_A9, EVENTOUT
DS13543 Rev 2
OCTOSPIM_P2_IO4,
- - M6 53 T6 P6 J6 H11 R9 - - M6 56 J6 PG0 I/O FT_ha - TSC_G8_IO3, ADC4_IN7
FMC_A10, EVENTOUT
OCTOSPIM_P2_IO5,
- - K6 54 W7 W7 H7 J12 N8 - - K6 57 H7 PG1 I/O FT_ha - TSC_G8_IO4, ADC4_IN8
FMC_A11, EVENTOUT
TIM1_ETR,
MDF1_SDI2, LCD_B6,
- 35 K7 55 AB8 T6 L7 L12 N9 - 38 K7 58 L7 PE7 I/O FT_h - WKUP6
FMC_D4, SAI1_SD_B,
EVENTOUT
TIM1_CH1N,
MDF1_CKI2, LCD_B7,
- 36 J6 56 V6 AA7 K7 N14 M8 - 39 J6 59 K7 PE8 I/O FT_h - FMC_D5, WKUP7
SAI1_SCK_B,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM1_CH1,
ADF1_CCK0,
MDF1_CCK0,
LCD_G2,
- 37 M7 57 U5 V6 J7 T17 P9 - 40 M7 60 J7 PE9 I/O FT_hv - -
OCTOSPIM_P1_NCLK
, FMC_D6,
DS13543 Rev 2
SAI1_FS_B,
EVENTOUT
- - - 58 AA7 C11 - E4 F6 - - - 61 - VSS S - - - -
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM1_CH3N,
SPI1_NSS,
MDF1_SDI5, LCD_G5,
- 40 J8 62 V4 Y6 N8 R14 N11 - 43 J8 65 N8 PE12 I/O FT_ha - -
TSC_G5_IO3,
OCTOSPIM_P1_IO0,
FMC_D9, EVENTOUT
DS13543 Rev 2
TIM1_CH3, SPI1_SCK,
MDF1_CKI5, LCD_G6,
- 41 M8 63 Y4 AB6 L8 N12 M9 - 44 M8 66 L8 PE13 I/O FT_ha - TSC_G5_IO4, -
OCTOSPIM_P1_IO1,
FMC_D10, EVENTOUT
TIM1_CH4,
TIM1_BKIN2,
- 42 K8 64 AB6 P4 K8 P13 R10 - 45 K8 67 K8 PE14 I/O FT_h - SPI1_MISO, LCD_G7, -
OCTOSPIM_P1_IO2,
FMC_D11, EVENTOUT
TIM1_BKIN,
TIM1_CH4N,
- 43 L8 65 AA5 T4 M9 R12 N10 - 46 L8 68 M9 PE15 I/O FT_h - SPI1_MOSI, LCD_R2, -
OCTOSPIM_P1_IO3,
FMC_D12, EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM2_CH3,
LPTIM3_CH1,
I2C4_SCL,
I2C2_SCL(boot),
SPI2_SCK,
USART3_TX,
DS13543 Rev 2
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
I2C2_SMBA,
SPI2_NSS(boot),
MDF1_SDI1,
USART3_CK,
- - L11 - Y2 AA3 L10 T5 M11 33 51 L11 73 L10 PB12 I/O FT_hav - -
LPUART1_RTS_DE,
TSC_G1_IO1,
OCTOSPIM_P1_NCLK
, SAI2_FS_A,
TIM15_BKIN,
EVENTOUT
TIM1_CH1N,
LPTIM3_IN1,
I2C2_SCL,
SPI2_SCK(boot),
MDF1_CKI1,
34 52 K10 74 R5 Y4 N13 T7 M12 34 52 K10 74 N13 PB13 I/O FT_fa - USART3_CTS, -
LPUART1_CTS,
STM32U5Axxx
TSC_G1_IO2,
SAI2_SCK_A,
TIM15_CH1N,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM1_CH2N,
LPTIM3_ETR,
TIM8_CH2N,
I2C2_SDA,
SPI2_MISO(boot),
MDF1_SDI2, UCPD1_
35 53 K11 75 T4 V4 M12 R6 P13 35 53 K11 75 M12 PB14 I/O FT_fda -
DS13543 Rev 2
USART3_RTS_DE, DBCC2
TSC_G1_IO3,
SDMMC2_D0,
SAI2_MCLK_A,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
STM32U5Axxx
LPTIM3_IN1,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM2_CH2,
I2C5_SMBA,
USART3_CK, LCD_R5,
TSC_G6_IO1,
- 57 M12 79 U3 W1 K11 P5 P14 - 57 M12 79 K11 PD10 I/O FT_ha - -
FMC_D15,
SAI2_SCK_A,
DS13543 Rev 2
LPTIM3_ETR,
EVENTOUT
I2C4_SMBA,
USART3_CTS,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM4_CH2, I2C4_SDA,
USART6_CTS,
LCD_VSYNC,
TSC_G6_IO4,
- 60 H11 82 U1 N3 K12 K11 N14 - 60 H11 82 K12 PD13 I/O FT_fha - LPGPIO1_P6, ADC4_IN17
FMC_A18,
DS13543 Rev 2
LPTIM4_IN1,
LPTIM2_CH1,
EVENTOUT
- - - 83 T2 C7 J12 G4 F9 - - - 83 J12 VSS S - - - -
- - - 84 R1 AC9 A11 R2 L9 - - - 84 J13 VDD S - - - -
TIM4_CH3,
USART6_CK, LCD_B2,
- 61 H10 85 N3 P2 J10 N10 N15 - 61 H10 85 J10 PD14 I/O FT_h - FMC_D0, -
LPTIM3_CH1,
EVENTOUT
TIM4_CH4,
USART6_RTS_DE,
- 62 H12 86 P2 R1 J11 K9 K12 - 62 H12 86 J11 PD15 I/O FT_h - LCD_B3, FMC_D1, -
LPTIM3_CH2,
EVENTOUT
STM32U5Axxx
SPI1_SCK, FMC_A12,
- - G10 87 N1 N1 K13 F9 G12 - - G10 87 K13 PG2 I/O FT_hs - SAI2_SCK_B, -
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
SPI1_MISO,
- - G11 88 M4 L1 J8 H9 D15 - - G11 88 J8 PG3 I/O FT_hs - FMC_A13, SAI2_FS_B, -
EVENTOUT
SPI1_MOSI,
FMC_A14,
- - G9 89 M2 M2 H11 J10 F12 - - G9 89 H11 PG4 I/O FT_hs - -
SAI2_MCLK_B,
DS13543 Rev 2
EVENTOUT
SPI1_NSS,
LPUART1_CTS,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
138/390
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
I2C3_SDA,
- - F12 93 K4 K2 H9 F11 E13 - - F12 93 H9 PG8 I/O FT_fs - LPUART1_RX, -
EVENTOUT
- - - 94 K2 - - N4 G10 - - - 94 - VSS S - - - -
- - - 95 J1 G1 H12 E2 G11 - - - 95 H12 VDDIO2 S - - - -
DS13543 Rev 2
CSLEEP, TIM3_CH1,
TIM8_CH1,
MDF1_CKI3, LCD_R0,
SDMMC1_D0DIR,
TSC_G4_IO1,
37 63 F11 96 J3 N5 H13 D5 C15 37 63 F11 96 H13 PC6 I/O FT_a - -
DCMI_D0/PSSI_D0,
SDMMC2_D6,
SDMMC1_D6,
SAI2_MCLK_A,
EVENTOUT
CDSTOP, TIM3_CH2,
TIM8_CH2,
MDF1_SDI3, LCD_R1,
SDMMC1_D123DIR,
TSC_G4_IO2,
38 64 E10 97 L5 J3 G12 D3 B15 38 64 E10 97 G12 PC7 I/O FT_a - DCMI_D1/PSSI_D1, -
SDMMC2_D7,
STM32U5Axxx
SDMMC1_D7,
SAI2_MCLK_B,
LPTIM2_CH2,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
SRDSTOP, TIM3_CH3,
TIM8_CH3,
USART6_RX,
TSC_G4_IO3,
39 65 E12 98 G1 K4 G10 D7 A14 39 65 E12 98 G10 PC8 I/O FT_a - -
DCMI_D2/PSSI_D2,
SDMMC1_D0,
DS13543 Rev 2
LPTIM3_CH1,
EVENTOUT
TRACED0,
TIM8_BKIN2,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM1_CH2, SPI2_SCK,
DCMI_D0/PSSI_D0,
USART1_TX(boot), OTG_HS
42 68 D10 101 F2 F2 G11 C6 E12 42 68 D10 101 G11 PA9 I/O FT_u -
SAI1_FS_A, _VBUS
TIM15_BKIN,
EVENTOUT
DS13543 Rev 2
CRS_SYNC,
TIM1_CH3,
LPTIM2_IN2, SAI1_D1,
DCMI_D1/PSSI_D1,
43 69 D11 102 E3 G3 F11 C4 D12 43 69 D11 102 F11 PA10 I/O FT_u - USART1_RX(boot), -
OTG_HS_ID,
SAI1_SD_A,
TIM17_BKIN,
EVENTOUT
- - - - - - - D1 F11 - - - - - VDD11USB S - - - -
TIM1_CH4,
TIM1_BKIN2,
(5) SPI1_MISO, OTG_HS_
44 70 C12 103 E1 E1 G13 C2 B14 44 70 C12 103 G13 PA11 I/O TT
USART1_CTS, DM(boot)
FDCAN1_RX,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM1_ETR,
SPI1_MOSI,
45 71 B12 104 C1 C1 F13 B1 B13 45 71 B12 104 F13 PA12 I/O TT (5) OCTOSPIM_P2_NCS, OTG_HS_
USART1_RTS_DE, DP(boot)
FDCAN1_TX,
EVENTOUT
DS13543 Rev 2
PA13 JTMS/SWDIO,
(6)
46 72 C10 105 D2 E3 F12 B3 C13 46 72 C10 105 F12 (JTMS/ I/O FT IR_OUT, SAI1_SD_B, -
SWDIO) EVENTOUT
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
JTDI, TIM2_CH1,
TIM2_ETR,
USART2_RX,
(4)
SPI1_NSS, SPI3_NSS,
50 77 A11 110 F4 B4 A10 A8 A11 50 77 A11 110 A10 PA15 (JTDI) I/O FT_c (6) UCPD1_CC1
USART3_RTS_DE,
UART4_RTS_DE,
DS13543 Rev 2
SAI2_FS_B,
EVENTOUT
TRACED1,
LPTIM3_ETR,
ADF1_CCK1,
SPI3_SCK,
USART3_TX(boot),
UART4_TX,
51 78 B11 111 D4 D4 C9 B9 A10 51 78 B11 111 C9 PC10 I/O FT_a - -
TSC_G3_IO2,
DCMI_D8/PSSI_D8,
LPGPIO1_P8,
SDMMC1_D2,
SAI2_SCK_B,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM3_IN1,
ADF1_SDI0,
DCMI_D2/PSSI_D2,
OCTOSPIM_P1_NCS,
SPI3_MISO,
USART3_RX(boot),
DS13543 Rev 2
52 79 A10 112 B4 J5 A9 C10 B10 52 79 A10 112 A9 PC11 I/O FT_ha - UART4_RX, -
TSC_G3_IO3,
DCMI_D4/PSSI_D4,
UCPD1_FRSTX2,
LCD_B4, FDCAN1_RX,
FMC_D2, EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
144/390
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
I2C6_SCL, I2C5_SCL,
SPI2_SCK, LCD_B5,
- 82 B9 115 E5 E5 F6 A10 C9 - 82 B9 115 F6 PD1 I/O FT_fh - -
FDCAN1_TX,
FMC_D3, EVENTOUT
TRACED2, TIM3_ETR,
I2C5_SMBA,
DS13543 Rev 2
USART3_RTS_DE,
UART5_RX,
TSC_SYNC,
54 83 A9 116 C5 G5 F7 D13 B9 54 83 A9 116 F7 PD2 I/O FT - -
DCMI_D11/PSSI_D11,
LPGPIO1_P7,
SDMMC1_CMD,
LPTIM4_ETR,
EVENTOUT
I2C6_SMBA,
SPI2_SCK,
DCMI_D5/PSSI_D5,
SPI2_MISO,
MDF1_SDI0,
- 84 C8 117 A5 K6 D8 C12 A9 - 84 C8 117 D8 PD3 I/O FT_hv - -
USART2_CTS,
LCD_CLK,
OCTOSPIM_P2_NCS,
FMC_CLK,
STM32U5Axxx
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
SPI2_MOSI,
MDF1_CKI0,
USART2_RTS_DE,
- 85 B8 118 H6 B6 C8 D15 A8 - 85 B8 118 C8 PD4 I/O FT_h - -
OCTOSPIM_P1_IO4,
FMC_NOE,
EVENTOUT
DS13543 Rev 2
SPI2_RDY,
USART2_TX,
- 86 A8 119 F6 D6 E7 E16 B8 - 86 A8 119 E7 PD5 I/O FT_h - OCTOSPIM_P1_IO5, -
FMC_NWE,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
MDF1_CKI1,
USART2_CK,
OCTOSPIM_P1_IO7,
- 88 D7 123 L7 H6 D7 C14 D8 - 88 D7 123 D7 PD7 I/O FT_h - SDMMC2_CMD, -
FMC_NCE/FMC_NE1,
LPTIM4_OUT,
DS13543 Rev 2
EVENTOUT
OCTOSPIM_P2_IO6,
SPI3_SCK(boot),
USART1_TX,
- - B7 124 J7 - A7 B13 A7 - - B7 124 A7 PG9 I/O FT_hs - FMC_NCE/FMC_NE2, -
SAI2_SCK_A,
TIM15_CH1N,
EVENTOUT
LPTIM1_IN1,
OCTOSPIM_P2_IO7,
SPI3_MISO(boot),
USART1_RX,
- - C7 125 E7 - C7 F19 B7 - - C7 125 C7 PG10 I/O FT_hs - -
FMC_NE3,
SAI2_FS_A,
TIM15_CH1,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_IN2,
OCTOSPIM_P1_IO5,
SPI3_MOSI,
- - - - C7 - - E18 C7 - - M11 126 M10 PG11 I/O FT_hs - USART1_CTS, -
SAI2_MCLK_A,
TIM15_CH2,
DS13543 Rev 2
EVENTOUT
LPTIM1_ETR,
OCTOSPIM_P2_NCS,
SPI3_NSS(boot),
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_CH1,
I2C1_SMBA,
- - - 131 H8 - A5 H17 A5 - - B4 132 A5 PG15 I/O FT_hs - OCTOSPIM_P2_DQS, -
DCMI_D13/PSSI_D13,
EVENTOUT
JTDO/TRACESWO,
DS13543 Rev 2
TIM2_CH2,
LPTIM1_CH1,
ADF1_CCK0,
I2C1_SDA, SPI1_SCK,
PB3 (JTDO/
SPI3_SCK, COMP2_
55 89 C6 132 K8 B8 D6 B17 E7 55 89 C6 133 D6 TRACESW I/O FT_fa -
USART1_RTS_DE, INM2
O)
CRS_SYNC,
LPGPIO1_P11,
SDMMC2_D2,
SAI1_SCK_B,
EVENTOUT
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
NJTRST,
LPTIM1_CH2,
TIM3_CH1,
ADF1_SDI0,
I2C3_SDA,
SPI1_MISO,
DS13543 Rev 2
SPI3_MISO,
PB4 (6) USART1_CTS, COMP2_
56 90 B6 133 L9 E7 B6 G18 D6 56 90 B6 134 B6 I/O FT_fa
(NJTRST) UART5_RTS_DE, INP1
TSC_G2_IO1,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_IN1,
TIM3_CH2,
OCTOSPIM_P1_NCLK
, I2C1_SMBA,
SPI1_MOSI,
SPI3_MOSI(boot),
UCPD1_
DS13543 Rev 2
USART1_CK,
57 91 D6 134 A9 A9 C6 C18 B5 57 91 D6 135 C6 PB5 I/O FT_havc - DBCC1,
UART5_CTS,
WKUP6
TSC_G2_IO2,
DCMI_D10/PSSI_D10,
COMP2_OUT,
SAI1_SD_B,
TIM16_BKIN,
EVENTOUT
LPTIM1_ETR,
TIM4_CH1,
TIM8_BKIN2,
I2C1_SCL(boot),
I2C4_SCL,
COMP2_
MDF1_SDI5,
58 92 A5 135 E9 D8 B5 A18 A4 58 92 A5 136 B5 PB6 I/O FT_fa - INP2,
USART1_TX,
WKUP3
TSC_G2_IO3,
DCMI_D5/PSSI_D5,
STM32U5Axxx
SAI1_FS_B,
TIM16_CH1N,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
LPTIM1_IN2,
TIM4_CH2,
TIM8_BKIN,
I2C1_SDA(boot),
I2C4_SDA,
COMP2_
MDF1_CKI5,
INM1,
DS13543 Rev 2
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
152/390
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
IR_OUT, TIM4_CH4,
SAI1_D2, I2C1_SDA,
SPI2_NSS,
SDMMC1_CDIR,
FDCAN1_TX(boot),
- 96 A4 139 B10 F8 D5 C20 C5 62 96 A4 140 D5 PB9 I/O FT_f - DCMI_D7/PSSI_D7, -
DS13543 Rev 2
SDMMC2_D5,
SDMMC1_D5,
SAI1_FS_A,
TIM17_CH1,
EVENTOUT
TIM4_ETR,
USART6_RX,
LCD_HSYNC,
DCMI_D2/PSSI_D2,
- 97 C4 140 M10 H8 D4 A20 A2 - 97 C4 141 D4 PE0 I/O FT_h - -
LPGPIO1_P13,
FMC_NBL0,
TIM16_CH1,
EVENTOUT
USART6_TX,
LCD_VSYNC,
DCMI_D3/PSSI_D3,
- - A3 141 K10 E9 C4 B21 B3 - 98 A3 142 C4 PE1 I/O FT_h - -
FMC_NBL1,
STM32U5Axxx
TIM17_CH1,
EVENTOUT
- - - - - - - - - - - - - A4 VCAP S - - - -
62 98 B4 142 A11 B10 A4 A22 E6 - - - - - VDD11 S - - - -
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
OCTOSPIM_P1_IO4,
- - - - - - F10 B7 D11 - - - - F10 PH2 I/O FT_h - -
EVENTOUT
I2C5_SDA, I2C2_SCL,
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
I2C3_SDA,
OCTOSPIM_P2_IO3,
- - - - - - D12 G16 D10 - - - - D12 PH8 I/O FT_fh - -
DCMI_HSYNC/PSSI_D
E, EVENTOUT
I2C3_SMBA,
OCTOSPIM_P2_IO4,
DS13543 Rev 2
STM32U5Axxx
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM5_CH3,
TIM8_CH4N,
OCTOSPIM_P2_IO7,
- - - - - - B13 M5 M15 - - - - B13 PH12 I/O FT_hv - -
HSPI1_IO2,
DCMI_D3/PSSI_D3,
EVENTOUT
DS13543 Rev 2
TIM8_CH1N,
HSPI1_IO3,
- - - - - - C12 M7 L15 - - - - C12 PH13 I/O FT_hv - -
FDCAN1_TX,
EVENTOUT
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM5_CH4,
OCTOSPIM_P1_IO5,
SPI2_NSS,
- - - - - - B12 K7 K15 - - - - B12 PI0 I/O FT_hv - -
HSPI1_IO6,
DCMI_D13/PSSI_D13,
EVENTOUT
DS13543 Rev 2
SPI2_SCK,
OCTOSPIM_P2_IO2,
- - - - - - A12 K5 J12 - - - - A12 PI1 I/O FT_hv - HSPI1_IO7, -
DCMI_D8/PSSI_D8,
EVENTOUT
- - - - - - - K3 K7 - - - - - VSS S - - - -
- - - - - - - H1 K11 - - - - - VDD S - - - -
TIM8_CH4,
SPI2_MISO,
OCTOSPIM_P2_IO1,
- - - - - - D11 J6 J13 - - - - D11 PI2 I/O FT_hv - -
HSPI1_DQS0,
DCMI_D9/PSSI_D9,
EVENTOUT
TIM8_ETR,
SPI2_MOSI,
STM32U5Axxx
OCTOSPIM_P2_IO0,
- - - - - - D10 K1 J14 - - - - D10 PI3 I/O FT_hvp - -
HSPI1_CLK,
DCMI_D10/PSSI_D10,
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
TIM8_BKIN,
SPI2_RDY,
- - - - - - B10 J2 H14 - - - - B10 PI4 I/O FT_hvp - HSPI1_NCLK, -
DCMI_D5/PSSI_D5,
EVENTOUT
TIM8_CH1,
DS13543 Rev 2
OCTOSPIM_P2_NCS,
- - - - - - B3 C22 C4 - - - - B3 PI5 I/O FT_hv - -
DCMI_VSYNC/PSSI_R
DY, EVENTOUT
HSPI1_IO9,
- - - - - - - H7 G15 - - - - - PI10 I/O FT_hv - -
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
158/390
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
HSPI1_IO10,
- - - - - - - G6 G14 - - - - - PI11 I/O FT_hv - -
EVENTOUT
HSPI1_IO11,
- - - - - - - G8 G13 - - - - - PI12 I/O FT_hv - -
EVENTOUT
- - - - - - - L4 K9 - - - - - VSS S - - - -
DS13543 Rev 2
- - - - - - - M1 - - - - - - VDD S - - - -
HSPI1_IO12,
- - - - - - - F7 F15 - - - - - PI13 I/O FT_hv - -
EVENTOUT
HSPI1_IO13,
- - - - - - - F5 F14 - - - - - PI14 I/O FT_hv - -
EVENTOUT
HSPI1_IO14,
- - - - - - - E8 F13 - - - - - PI15 I/O FT_hv - -
EVENTOUT
I2C5_SMBA,
- - - - - - - E6 E15 - - - - - PJ0 I/O FT_hv - HSPI1_IO15, -
EVENTOUT
- - - - - - - M3 L10 - - - - - VSS S - - - -
- - - - - - - N2 - - - - - - VDD S - - - -
I2C5_SDA,
- - - - - - - - G4 - - - - - PJ1 I/O FT_fhv - -
STM32U5Axxx
EVENTOUT
I2C5_SCL,
- - - - - - - - D2 - - - - - PJ2 I/O FT_fhv - -
EVENTOUT
Table 27. STM32U5Axxx pin/ball definitions(1) (continued)
STM32U5Axxx
Pin number
I/O structure
TFBGA169 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP64 SMPS Pin name
Pin type
UFBGA132
Additional
TFBGA169
Notes
LQFP100
LQFP144
(function Alternate functions
LQFP64
functions
after reset)
USART6_TX,
- - - - - - - - D1 - - - - - PJ3 I/O FT_hv - -
EVENTOUT
USART6_RX,
- - - - - - - - E3 - - - - - PJ4 I/O FT_hv - -
EVENTOUT
- - - - M12 V2 B11 - R1 - - - - B11 VSS S - - - -
DS13543 Rev 2
USART6_RTS_DE,
- - - - - - - - F3 - - - - - PJ5 I/O FT_hv - -
EVENTOUT
USART6_CK,
STM32U5Axxx
4.3 Alternate functions
STM32U5Axxx
Table 28. Alternate function AF0 to AF7(1)
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
OCTOSPIM_P1
PA4 - - - - SPI1_NSS SPI3_NSS USART2_CK
_NCS
PA5 CSLEEP TIM2_CH1 TIM2_ETR TIM8_CH1N PSSI_D14 SPI1_SCK - USART3_RX
USART3_RTS_
PA15 JTDI TIM2_CH1 TIM2_ETR USART2_RX - SPI1_NSS SPI3_NSS
DE
Table 28. Alternate function AF0 to AF7(1) (continued)
162/390
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
OCTOSPIM_P1
PB5 - LPTIM1_IN1 TIM3_CH2 I2C1_SMBA SPI1_MOSI SPI3_MOSI USART1_CK
_NCLK
PB6 - LPTIM1_ETR TIM4_CH1 TIM8_BKIN2 I2C1_SCL I2C4_SCL MDF1_SDI5 USART1_TX
Port B
STM32U5Axxx
PB15 RTC_REFIN TIM1_CH3N LPTIM2_IN2 TIM8_CH3N - SPI2_MOSI MDF1_CKI2 -
Table 28. Alternate function AF0 to AF7(1) (continued)
STM32U5Axxx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
OCTOSPIM_P1
PC0 - LPTIM1_IN1 - I2C3_SCL SPI2_RDY MDF1_SDI4 USART6_CTS
_IO7
PC1 TRACED0 LPTIM1_CH1 - SPI2_MOSI I2C3_SDA - MDF1_CKI4 USART6_CK
PC2 - LPTIM1_IN2 - - - SPI2_MISO MDF1_CCK1 USART6_RX
PC3 - LPTIM1_ETR LPTIM3_CH1 SAI1_D1 - SPI2_MOSI - USART6_TX
PC4 - - I2C6_SMBA - - - - USART3_TX
PC5 - TIM1_CH4N SAI1_D3 PSSI_D15 - - USART3_RX
DS13543 Rev 2
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
DE
PD5 - - - - - SPI2_RDY - USART2_TX
DCMI_D10/
PD6 - - - SAI1_D1 SPI3_MOSI MDF1_SDI1 USART2_RX
PSSI_D10
Port D
STM32U5Axxx
PD14 - - TIM4_CH3 - - - - USART6_CK
USART6_RTS_
PD15 - - TIM4_CH4 - - - -
DE
Table 28. Alternate function AF0 to AF7(1) (continued)
STM32U5Axxx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
STM32U5Axxx
PF14 - - - - I2C4_SCL - - -
PF15 - - - - I2C4_SDA - - -
Table 28. Alternate function AF0 to AF7(1) (continued)
STM32U5Axxx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
PG0 - - - - - OCTOSPIM_P2_IO4 - -
PG1 - - - - - OCTOSPIM_P2_IO5 - -
PG2 - - - - - SPI1_SCK - -
PG3 - - - - - SPI1_MISO - -
PG4 - - - - - SPI1_MOSI - -
PG5 - - - - - SPI1_NSS - -
DS13543 Rev 2
OCTOSPIM_P1
PG6 - - - I2C3_SMBA SPI1_RDY - LCD_R1
_DQS
OCTOSPIM_P2_
PG7 - - - SAI1_CK1 I2C3_SCL MDF1_CCK0 -
PG8 - - - - I2C3_SDA - - -
PG9 - - - - - OCTOSPIM_P2_IO6 SPI3_SCK USART1_TX
PG10 - LPTIM1_IN1 - - - OCTOSPIM_P2_IO7 SPI3_MISO USART1_RX
OCTOSPIM_P1
PG11 - LPTIM1_IN2 - - - SPI3_MOSI USART1_CTS
_IO5
OCTOSPIM_P2_ USART1_RTS_
PG12 - LPTIM1_ETR - - - SPI3_NSS
NCS DE
PG13 - - - - I2C1_SDA - SPI3_RDY USART1_CK
PG14 - LPTIM1_CH2 - - I2C1_SCL - - -
OCTOSPIM_P2_
PG15 - LPTIM1_CH1 - - I2C1_SMBA - -
DQS
167/390
Table 28. Alternate function AF0 to AF7(1) (continued)
168/390
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
PH0 - - - - - - - -
PH1 - - - - - - - -
OCTOSPIM_P1
PH2 - - - - - - -
_IO4
PH3 - - - - - - - -
OCTOSPIM_P2_
PH4 - - I2C5_SDA - I2C2_SCL - -
DQS
DS13543 Rev 2
OCTOSPIM_P2_
PH7 - - - - I2C3_SCL - -
NCLK
PH8 - - - - I2C3_SDA OCTOSPIM_P2_IO3 - -
PH9 - - - - I2C3_SMBA OCTOSPIM_P2_IO4 - -
PH10 - - TIM5_CH1 - - OCTOSPIM_P2_IO5 - -
PH11 - - TIM5_CH2 - - OCTOSPIM_P2_IO6 - -
PH12 - - TIM5_CH3 TIM8_CH4N - OCTOSPIM_P2_IO7 - -
PH13 - - - TIM8_CH1N - - - -
PH14 - - - TIM8_CH2N - - - -
STM32U5Axxx
PH15 - - - TIM8_CH3N - OCTOSPIM_P2_IO6 - -
Table 28. Alternate function AF0 to AF7(1) (continued)
STM32U5Axxx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
OCTOSPIM_P1
PI0 - - TIM5_CH4 - SPI2_NSS - -
_IO5
OCTOSPIM_P2
PI1 - - - - - SPI2_SCK -
_IO2
OCTOSPIM_P2
PI2 - - - TIM8_CH4 - SPI2_MISO -
_IO1
OCTOSPIM_P2
PI3 - - - TIM8_ETR - SPI2_MOSI -
_IO0
DS13543 Rev 2
PI6 - - - TIM8_CH2 - - -
CLK
OCTOSPIM_P2_
PI7 - - - TIM8_CH3 - - -
NCLK
PI8 - - - - - - - -
PI9 - - - - - - - -
PI10 - - - - - - - -
PI11 - - - - - - - -
PI12 - - - - - - - -
PI13 - - - - - - - -
PI14 - - - - - - - -
169/390
PI15 - - - - - - - -
Table 28. Alternate function AF0 to AF7(1) (continued)
170/390
ADF1/I2C4/
Port I2C5/6/ OCTOSPIM_P1/ DCMI/ DCMI/I2C4/MDF1/ I2C3/MDF1/
CRS/LPTIM1/ LPTIM1/ LCD/
LPTIM1/2/3/ OTG_HS/SAI1/ I2C1/2/3/4/5/ OCTOSPIM_P1/2/ OCTOSPIM_P2/
SYS_AF TIM1/2/5/8 USART1/2/3/6
TIM1/2/3/4/5 SPI2/TIM1/8/ LPTIM3 SPI1/2/3 SPI3
USART2
PJ0 - - - - I2C5_SMBA - - -
PJ1 - - - - I2C5_SDA - - -
PJ2 - - - - I2C5_SCL - - -
PJ3 - - - - - - - USART6_TX
PJ4 - - - - - - - USART6_RX
USART6_RTS_
PJ5 - - - - - - -
Port J
DE
DS13543 Rev 2
PJ6 - - - - - - - USART6_CK
PJ7 - - - - - - - USART6_CTS
PJ8 - - I2C6_SMBA - - - - -
PJ9 - - I2C6_SDA - - - - -
PJ10 - - I2C6_SCL - - - - -
PJ11 - - - - - - - -
1. Refer to the next table for AF8 to AF15.
STM32U5Axxx
Table 29. Alternate function AF8 to AF15(1)
STM32U5Axxx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
OCTOSPIM_P2_
PA0 UART4_TX - - SDMMC2_CMD AUDIOCLK TIM2_ETR EVENTOUT
NCS
OCTOSPIM_P1_
PA1 UART4_RX - LPGPIO1_P0 - - TIM15_CH1N EVENTOUT
DQS
OCTOSPIM_P1_ UCPD1_
PA2 LPUART1_TX - - - TIM15_CH1 EVENTOUT
NCS FRSTX1
OCTOSPIM_P1_
PA3 LPUART1_RX - LPGPIO1_P1 - SAI1_MCLK_A TIM15_CH2 EVENTOUT
CLK
DS13543 Rev 2
DCMI_HSYNC/
PA4 - - - - SAI1_FS_B LPTIM2_CH1 EVENTOUT
PSSI_DE
PA5 - - - - - - LPTIM2_ETR EVENTOUT
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
DCMI_D10/
PB5 UART5_CTS TSC_G2_IO2 - COMP2_OUT SAI1_SD_B TIM16_BKIN EVENTOUT
PSSI_D10
PB6 - TSC_G2_IO3 DCMI_D5/PSSI_D5 - - SAI1_FS_B TIM16_CH1N EVENTOUT
DCMI_VSYNC/
Port B
STM32U5Axxx
PB13 LPUART1_CTS TSC_G1_IO2 - - - SAI2_SCK_A TIM15_CH1N EVENTOUT
PB14 - TSC_G1_IO3 - - SDMMC2_D0 SAI2_MCLK_A TIM15_CH1 EVENTOUT
PB15 - - - FMC_NBL1 SDMMC2_D1 SAI2_SD_A TIM15_CH2 EVENTOUT
Table 29. Alternate function AF8 to AF15(1) (continued)
STM32U5Axxx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
D0DIR
SDMMC1_
PC7 TSC_G4_IO2 DCMI_D1/PSSI_D1 SDMMC2_D7 SDMMC1_D7 SAI2_MCLK_B LPTIM2_CH2 EVENTOUT
Port C
D123DIR
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
DCMI_HSYNC/
PD8 LCD_R3 - - FMC_D13 - - EVENTOUT
PSSI_DE
DCMI_PIXCLK/
PD9 LCD_R4 - - FMC_D14 SAI2_MCLK_A LPTIM3_IN1 EVENTOUT
PSSI_PDCK
PD10 LCD_R5 TSC_G6_IO1 - - FMC_D15 SAI2_SCK_A LPTIM3_ETR EVENTOUT
FMC_CLE/
PD11 LCD_R6 TSC_G6_IO2 - - SAI2_SD_A LPTIM2_ETR EVENTOUT
FMC_A16
FMC_ALE/
PD12 LCD_R7 TSC_G6_IO3 - - SAI2_FS_A LPTIM2_IN1 EVENTOUT
FMC_A17
PD13 LCD_VSYNC TSC_G6_IO4 - LPGPIO1_P6 FMC_A18 LPTIM4_IN1 LPTIM2_CH1 EVENTOUT
STM32U5Axxx
PD14 LCD_B2 - - - FMC_D0 - LPTIM3_CH1 EVENTOUT
PD15 LCD_B3 - - - FMC_D1 - LPTIM3_CH2 EVENTOUT
Table 29. Alternate function AF8 to AF15(1) (continued)
STM32U5Axxx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
STM32U5Axxx
Table 29. Alternate function AF8 to AF15(1) (continued)
STM32U5Axxx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
DE FRSTX1
UCPD1_
PG7 LPUART1_TX - - FMC_INT SAI1_MCLK_A - EVENTOUT
FRSTX2
Port G
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
PH0 - - - - - - - EVENTOUT
PH1 - - - - - - - EVENTOUT
PH2 - - - - - - - EVENTOUT
PH3 - - - - - - - EVENTOUT
PH4 - - PSSI_D14 - - - - EVENTOUT
DCMI_PIXCLK/PSSI
PH5 - - - - - - EVENTOUT
_PDCK
DS13543 Rev 2
DCMI_HSYNC/PSSI
PH8 - - - - - - EVENTOUT
_DE
PH9 HSPI1_NCS - DCMI_D0/PSSI_D0 - - - - EVENTOUT
PH10 HSPI1_IO0 - DCMI_D1/PSSI_D1 - - - - EVENTOUT
PH11 HSPI1_IO1 - DCMI_D2/PSSI_D2 - - - - EVENTOUT
PH12 HSPI1_IO2 - DCMI_D3/PSSI_D3 - - - - EVENTOUT
PH13 HSPI1_IO3 FDCAN1_TX - - - - - EVENTOUT
PH14 HSPI1_IO4 FDCAN1_RX DCMI_D4/PSSI_D4 - - - - EVENTOUT
DCMI_D11/PSSI_
PH15 HSPI1_IO5 - - - - - EVENTOUT
D11
STM32U5Axxx
Table 29. Alternate function AF8 to AF15(1) (continued)
STM32U5Axxx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
DCMI_D13/PSSI_
PI0 HSPI1_IO6 - - - - - EVENTOUT
D13
PI1 HSPI1_IO7 - DCMI_D8/PSSI_D8 - - - - EVENTOUT
PI2 HSPI1_DQS0 - DCMI_D9/PSSI_D9 - - - - EVENTOUT
DCMI_D10/PSSI_
PI3 HSPI1_CLK - - - - - EVENTOUT
D10
PI4 HSPI1_NCLK - DCMI_D5/PSSI_D5 - - - - EVENTOUT
DCMI_VSYNC/PSSI
DS13543 Rev 2
PI5 - - - - - - EVENTOUT
_RDY
PI6 - - DCMI_D6/PSSI_D6 - - - - EVENTOUT
Port I
HSPI1/LCD/ DSI/FMC/
Port CRS/DCMI/ COMP1/2/FMC/
LPUART1/ LPGPIO1/ LPTIM2/4/ LPTIM2/3/
CAN1/TSC OCTOSPIM_P1/2/ SDMMC1/2/ EVENTOUT
SDMMC1/ SDMMC2/ SAI1/2 TIM2/15/16/17
OTG_HS SYS_AF
UART4/5 UCPD1
PJ6 - - - - - - - EVENTOUT
DS13543 Rev 2
PJ7 - - - - - - - EVENTOUT
PJ8 - - - - - - - EVENTOUT
PJ9 - - - - - - - EVENTOUT
PJ10 - - - - - - - EVENTOUT
PJ11 - - - - - - - EVENTOUT
1. For AF0 to AF7 refer to the previous table.
STM32U5Axxx
STM32U5Axxx Electrical characteristics
5 Electrical characteristics
Figure 21. Pin loading conditions Figure 22. Pin input voltage
MSv68045V1 MSv68046V1
as close as possible to, or below, the appropriate pins on the underside of the PCB to
ensure the proper functionality of the device.
VCAP
COUT = 4.7 μF
VCORE
VDD
n x VDD LDO VCORE
regulator
VDDIO1
OUT
Level shifter
n x 100 nF GPIOs I/O
IN logic Kernel logic
+ 10 μF
(CPU, digital
and memories)
n x VSS
VDDIO2
m x VDDIO2
VDDIO2
Level shifter
m x100 nF OUT
I/O
+ 4.7 μF GPIOs
IN
logic
m x VSS
VDDA
VDDA
VREF
ADCs/
100 nF VREF+ DACs/
+ 1 μF OPAMPs/
100 nF+ 1 μF VREF- COMPs/
VREFBUF
VSSA
MSv71165V2
Caution: If there are two VCAP pins (TFBGA169 package), each pin must be connected to a 2.2 µF
(typical) capacitor.
The external capacitor on VCAP pin requires the following characteristics:
• COUT = 4.7 µF or 2 × 2.2 µF ±20%
• COUT ESR < 20 mΩ at 3 MHz
• COUT rated voltage ≥ 10 V
L = 2.2 μH
2 x VDD11
COUT = 2 x 2.2 μF Kernel logic
VSSSMPS
SMPS OFF (CPU, digital
VDD11(1) and memories)
VDD11USB(1)
VDD11DSI
VDD LDO
n x VDD
VDDIO1
OUT
Level shifter
n x VSS
VDDIO2
m x VDDIO2
VDDIO2
Level shifter
m x100 nF OUT
I/O
+ 4.7 μF GPIOs
IN
logic
m x VSS
VDDA
VDDA
VREF
ADCs/
100 nF VREF+ DACs/ (1) Only available on specific
+ 1 μF OPAMPs/
VREF- COMPs/
packages
100 nF+ 1 μF
VREFBUF
VSSA
MSv67887V3
Note: SMPS and LDO regulators provide, in a concurrent way, the VCORE supply depending on
application requirements. However, only one of them is active at the same time. When
SMPS is active, it feeds the VCORE on the two VDD11 pins supplied by the filtered SMPS
VLXSMPS output pin. When LDO is active, it supplies the VCORE and regulates it using the
same capacitors on VDD11 pins. It is recommended to add a decoupling capacitor of 100 nF
near each VDD11 pin/ball, but it is not mandatory.
The external capacitors on VDD11 pins require the following characteristics:
• COUT = 2 × 2.2 µF ±20%
• COUT ESR < 20 mΩ at 3 MHz
• COUT rated voltage ≥ 10 V
The external capacitor on VDDSMPS pin requires the following characteristics:
• CIN = 10 µF ±20%
• CIN ESR < 10 mΩ at 3 MHz
• CIN rated voltage ≥ 10 V
The external inductance between VLXSMPS and VDD11 requires the following
characteristics:
• L = 2.2 µH ±20%
• L ISAT > 0.5 A
• L DCR < 200 mΩ
VBAT
IDD_VBAT
IDD
VDD
VDDA
VDDDSI
VDDUSB
VDDSMPS
VDDIO2
MSv67884V2
functional operation of the device at these conditions is not implied. Exposure to maximum
rating conditions for extended periods may affect device reliability. Device mission profile
(application conditions) is compliant with JEDEC JESD47 qualification standard, extended
mission profiles are available on demand.
∑IVDD Total current into sum of all VDD power lines (source)(1) 200
∑IVSS Total current out of sum of all VSS ground lines (sink)(1) 200
(1)
IVDD Maximum current into each VDD power pin (source) 100
IVSS Maximum current out of each VSS ground pin (sink)(1) 100
Output current sunk by any I/O and control pin 20
IIO mA
Output current sourced by any I/O and control pin 20
Total output current sunk by sum of all I/Os and control pins(2) 120
∑I(PIN)
Total output current sourced by sum of all I/Os and control pins(2) 120
IINJ(PIN)(3)(4) Injected current on FT_xx, TT_xx, RST pins -5/+0
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) ±25
1. All main power (VDD, VDDSMPS, VDDA, VDDUSB, VDDDSI, VDDIO2, VBAT) and ground (VSS, VSSA, VSSSMPS) pins
must always be connected to the external power supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins, referring to high pin count QFP packages.
3. Positive injection (when VIN > VDDIOx) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 30 for the minimum
allowed input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN) is the absolute sum of the negative
injected currents (instantaneous values).
Table 35. Embedded reset and power control block characteristics(1) (continued)
Symbol Parameter Conditions Min Typ Max Unit
MSv69159V1
Electrical characteristics
Table 38. Current consumption in Run mode on LDO, code with data processing
running from flash memory, ICACHE ON in 1-way, prefetch ON(1)
Conditions Typ Max at 1.71 V ≤ VDD ≤ 3.6 V(2)
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
24 1.85 2.50 4.45 7.4 13.0 3.1 4.8 11 20 37
16 1.45 2.10 4.05 7 12.5 2.7 4.4 11 19 36
12 1.20 1.80 3.80 6.7 12.0 2.4 4.0 9.9 19 36
fHCLK = fMSI,
all peripherals disabled, 4 0.65 1.30 3.25 6.15 11.5 1.8 3.5 9.3 18 35
Range 4
Flash bank 2 in power down, 2 0.53 1.15 3.10 6.05 11.5 1.6 3.3 9.2 18 35
all SRAMs enabled
1 0.47 1.10 3.05 6.0 11.5 1.6 3.3 9.1 18 35
0.4 0.43 1.05 3.00 5.95 11.5 1.5 3.2 9 18 35
DS13543 Rev 2
STM32U5Axxx
2. Evaluated by characterization. Not tested in production.
Table 39. Current consumption in Run mode on SMPS, code with data processing
STM32U5Axxx
running from flash memory, ICACHE ON in 1-way, prefetch ON(1)
Conditions Typ at VDD = 1.8 V Max at 1.71 V ≤ VDD ≤ 3.6 V(2)(3)
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
24 1.20 1.50 2.65 4.40 7.60 2.1 2.9 7 13 23
16 0.93 1.25 2.40 4.15 7.35 1.8 2.6 6 12 23
12 0.80 1.10 2.25 4.00 7.20 1.6 2.5 6.3 12 22
fHCLK = fMSI,
all peripherals disabled, 4 0.43 0.79 1.95 3.70 6.90 1.2 2.1 5.9 12 22
Range 4
Flash bank 2 in power down, 2 0.31 0.65 1.85 3.60 6.80 1.0 2 5.8 12 22
all SRAMs enabled
1 0.27 0.60 1.85 3.55 6.80 1.0 1.9 5.8 12 22
0.4 0.25 0.58 1.80 3.55 6.75 0.9 1.8 6 12 22
0.1 0.24 0.57 1.80 3.55 6.75 0.9 1.8 6 12 22
DS13543 Rev 2
Supply
IDD 160 11.5 12.0 14.5 18.0 24.0 15 17 27 40 64
current in mA
(Run) Run mode
fHCLK = PLL on HSE 16 MHz Range 1 140 10.0 10.5 13.0 16.5 22.5 14 16 25 38 62
in bypass mode,
120 8.75 9.35 12.0 15.5 21.5 12 14 24 37 61
all peripherals disabled,
Flash bank 2 in power down, 110 6.75 7.15 9.05 12.0 16.5 9 11 18 28 45
all SRAMs enabled Range 2 72 4.75 5.20 7.10 9.80 14.5 7 9 16 25 43
64 4.30 4.80 6.70 9.40 14.0 6.2 8 15 25 42
fHCLK = fHSE bypass mode, 55 3.15 3.55 5.00 7.15 11.0 4.5 6 11 19 32
all peripherals disabled,
Range 3
Flash bank 2 in power down,
Electrical characteristics
32 2.10 2.50 4.00 6.15 10.0 3.3 4.5 10 17 31
all SRAMs enabled
1. The current consumption from SRAM is similar.
2. Evaluated by characterization. Not tested in production.
3. The maximum value is at VDD = 1.71 V in Run mode on SMPS.
195/390
Table 40. Current consumption in Run mode on SMPS, code with data processing
196/390
Electrical characteristics
running from flash memory, ICACHE ON in 1-way, prefetch ON, VDD = 3.0 V(1)
Conditions Typ at VDD = 3.0 V Max at VDD = 3.0 V(2)
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
24 0.77 0.95 1.65 2.75 4.75 1.3 1.9 4.0 7 14
16 0.61 0.80 1.50 2.60 4.60 1.2 1.7 3.9 7 14
12 0.50 0.70 1.40 2.50 4.50 1.0 1.6 3.8 7 13
fHCLK = fMSI,
all peripherals disabled, 4 0.28 0.49 1.20 2.30 4.30 0.8 1.4 3.6 7 13
Range 4
Flash bank 2 in power down, 2 0.23 0.45 1.20 2.25 4.25 0.7 1.3 3.6 7 13
all SRAMs enabled
1 0.21 0.43 1.15 2.25 4.25 0.7 1.3 3.5 7 13
0.4 0.19 0.42 1.15 2.25 4.25 0.7 1.3 3.5 7 13
0.1 0.18 0.41 1.15 2.20 4.20 0.7 1.3 3.5 7 13
DS13543 Rev 2
Supply
IDD 160 7.60 8.00 9.70 12.0 16.0 10 11 17 25 39
current in mA
(Run) Run mode
fHCLK = PLL on HSE 16 MHz Range 1 140 6.80 7.20 8.90 11.5 15.5 9 10 16 24 39
in bypass mode,
120 5.95 6.40 8.05 10.5 14.5 8 9 15 23 38
all peripherals disabled,
Flash bank 2 in power down, 110 4.65 5.00 6.25 8.05 11.5 6 7 12 17 28
all SRAMs enabled Range 2 72 3.30 3.70 4.95 6.75 10.0 4.5 5.6 10 16 27
64 3.05 3.45 4.70 6.50 9.75 4.3 5.3 9 16 26
fHCLK = fHSE bypass mode, 55 2.30 2.60 3.60 5.05 7.70 3.2 4.0 7 12 20
all peripherals disabled,
Range 3
Flash bank 2 in power down, 32 1.55 1.90 2.85 4.30 6.95 2.4 3.2 6 11 19
all SRAMs enabled
1. The current consumption from SRAM is similar.
2. Evaluated by characterization. Not tested in production.
STM32U5Axxx
Table 41. Typical current consumption in Run mode on LDO, with different codes
STM32U5Axxx
running from flash memory, ICACHE ON (1-way), prefetch ON(1)
Conditions Typ Typ
Symbol
Parameter Unit Unit
- Voltage Code 1.8 V 3V 3.3 V 1.8 V 3V 3.3 V
scaling
Reduced Code 1.85 1.85 1.85 77 77 77
CoreMark 1.85 1.85 1.85 77 77 77
fHCLK = fMSI = 24 MHz,
all peripherals disabled, SecureMark 2 2 2 83 83 83
Range 4
Flash bank 2 in power down, Dhrystone 2.1 1.95 1.95 1.95 81 81 81
all SRAMs enabled
Fibonacci 1.6 1.6 1.6 67 67 67
While(1) 1.4 1.4 1.4 58 58 58
Reduced Code 14 14 14 88 88 88
fHCLK = fPLL = 160 MHz,
CoreMark 14.5 14.5 14.5 91 91 91
DS13543 Rev 2
Electrical characteristics
Fibonacci 7.55 7.6 7.6 69 69 69
all SRAMs enabled
While(1) 6.7 6.75 6.75 61 61 61
197/390
Table 41. Typical current consumption in Run mode on LDO, with different codes
198/390
Electrical characteristics
running from flash memory, ICACHE ON (1-way), prefetch ON(1) (continued)
Conditions Typ Typ
Symbol
Parameter Unit Unit
- Voltage Code 1.8 V 3V 3.3 V 1.8 V 3V 3.3 V
scaling
Reduced Code 4.5 4.6 4.6 82 84 84
CoreMark 4.6 4.65 4.7 84 85 85
fHCLK = fHSE = 55 MHz,
Supply SecureMark 5 5.05 5.1 91 92 93
IDD all peripherals disabled,
current in Range 3 mA µA/MHz
(Run) Flash bank 2 in power down, Dhrystone 2.1 4.85 4.9 4.9 88 89 89
Run mode
all SRAMs enabled
Fibonacci 3.7 3.8 3.8 67 69 69
While(1) 3.25 3.35 3.35 59 61 61
1. The current consumption from SRAM is similar.
DS13543 Rev 2
STM32U5Axxx
Table 42. Typical current consumption in Run mode on SMPS, with different codes
STM32U5Axxx
running from flash memory, ICACHE ON (1-way), prefetch ON(1)
Conditions Typ Typ
Symbol
Parameter Unit Unit
- Voltage Code 1.8 V 3V 3.3 V 1.8 V 3V 3.3 V
scaling
Reduced Code 1.2 0.77 0.7 50 32 29
CoreMark 1.2 0.77 0.7 50 32 29
fHCLK = fMSI = 24 MHz,
all peripherals disabled, SecureMark 1.3 0.83 0.76 54 35 31
Range 4
Flash bank 2 in power down, Dhrystone 2.1 1.25 0.81 0.74 52 34 31
all SRAMs enabled
Fibonacci 1.05 0.66 0.61 44 27 25
While(1) 0.94 0.61 0.54 39 25 22
Reduced Code 11.5 7.6 7.1 72 48 44
fHCLK = fPLL = 160 MHz,
CoreMark 11.5 7.65 7.15 72 48 45
DS13543 Rev 2
Electrical characteristics
Fibonacci 5.6 3.9 3.7 51 35 34
all SRAMs enabled
While(1) 5.0 3.5 3.3 45 32 30
199/390
Table 42. Typical current consumption in Run mode on SMPS, with different codes
200/390
Electrical characteristics
running from flash memory, ICACHE ON (1-way), prefetch ON(1) (continued)
Conditions Typ Typ
Symbol
Parameter Unit Unit
- Voltage Code 1.8 V 3V 3.3 V 1.8 V 3V 3.3 V
scaling
Reduced Code 3.15 2.3 2.2 57 42 40
CoreMark 3.2 2.35 2.2 58 43 40
fHCLK = fHSE = 55 MHz,
Supply SecureMark 3.5 2.5 2.4 64 45 44
IDD all peripherals disabled,
current in Range 3 mA µA/MHz
(Run) Flash bank 2 in power down, Dhrystone 2.1 3.35 2.45 2.3 61 45 42
Run mode
all SRAMs enabled
Fibonacci 2.65 1.95 1.85 48 35 34
While(1) 2.35 1.75 1.7 43 32 31
1. The current consumption from SRAM is similar.
DS13543 Rev 2
Table 43. Typical current consumption in Run mode on LDO, with different codes running
from flash memory in low-power mode, ICACHE ON (1-way), prefetch ON
Conditions Typ Typ
Symbol
STM32U5Axxx
Table 44. Typical current consumption in Run mode on SMPS, with different codes running
STM32U5Axxx
from flash memory in low-power mode, ICACHE ON (1-way), prefetch ON
Conditions Typ Typ
Symbol
Parameter Unit Unit
- Voltage Code 1.8 V 3V 3.3 V 1.8 V 3V 3.3 V
scaling
Reduced Code 1.05 0.66 0.61 43.8 27.5 25.4
fHCLK = fMSI = 24 MHz,
CoreMark 1.05 0.66 0.61 43.8 27.5 25.4
all peripherals disabled,
Supply SecureMark 1.15 0.73 0.67 47.9 30.4 27.7
IDD Flash bank 1 in low power,
current in Range 4 mA µA/MHz
(Run) Run mode Flash bank 2 in power down, Dhrystone 2.1 1.10 0.70 0.65 45.8 29.2 26.9
SRAM2 enabled,
Fibonacci 0.94 0.56 0.52 39 23.3 21.5
SRAM1/3/4/5 in power down
While(1) 0.80 0.49 0.45 33.3 20.2 18.5
DS13543 Rev 2
Electrical characteristics
201/390
Table 45. Current consumption in Sleep mode on LDO, flash memory in power down
202/390
Electrical characteristics
Conditions Typ Max at 1.71 V ≤ VDD ≤ 3.6 V(1)
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
24 0.75 1.35 3.30 6.25 11.5 1.8 3.4 9.2 18 34
16 0.63 1.25 3.20 6.10 11.5 1.6 3.3 9.1 18 34
12 0.57 1.20 3.15 6.05 11.5 1.6 3.2 9.0 18 34
fHCLK = fMSI, 4 0.42 1.05 3.00 5.90 11.5 1.4 3.1 8.9 18 34
Range 4
all peripherals disabled 2 0.39 1.00 2.95 5.85 11.0 1.4 3.0 8.8 18 33
1 0.37 1.00 2.95 5.85 11.0 1.3 3.0 8.8 18 33
0.4 0.36 0.99 2.90 5.85 11.0 1.3 3.0 8.7 18 33
Supply 0.1 0.36 0.98 2.90 5.85 11.0 1.3 3.0 8.7 18 33
IDD
current in mA
DS13543 Rev 2
(Sleep) Sleep mode 160 4.80 6.00 9.15 14.0 22.0 7.7 11 21 37 64
Range 1 140 4.40 5.55 8.70 13.5 21.5 7.2 9.7 21 36 64
fHCLK = PLL on HSE 120 3.95 5.10 8.25 13.0 21.0 6.7 9.2 20 36 63
16 MHz in bypass mode,
all peripherals disabled 110 3.25 4.20 6.90 11.0 18.0 5.3 8.2 19 34 60
Range 2 72 2.50 3.45 6.15 10.0 17.0 4.5 7.4 18 33 59
64 2.35 3.30 5.95 9.90 17.0 4.3 7.2 18 33 59
fHCLK = fHSE bypass mode, 55 1.75 2.55 4.80 8.20 14.5 3.2 5.4 13 25 45
Range 3
all peripherals disabled 32 1.30 2.05 4.35 7.75 14.0 2.7 4.9 13 24 45
1. Evaluated by characterization. Not tested in production.
STM32U5Axxx
Table 46. Current consumption in Sleep mode on SMPS, flash memory in power down
STM32U5Axxx
Conditions Typ at VDD = 1.8 V Max at 1.71 V ≤ VDD ≤ 3.6 V(1)(2)
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
24 0.47 0.86 1.95 3.7 6.85 1.1 2.1 5.8 12 22
16 0.39 0.75 1.90 3.6 6.80 1.0 1.9 5.7 12 22
12 0.36 0.69 1.85 3.6 6.75 0.9 1.9 5.7 12 22
fHCLK = fMSI, 4 0.22 0.55 1.75 3.5 6.65 0.8 1.7 5.6 11 21
Range 4
all peripherals disabled 2 0.21 0.53 1.75 3.45 6.65 0.7 1.7 5.6 11 21
1 0.20 0.52 1.75 3.45 6.65 0.7 1.7 5.6 11 21
0.4 0.19 0.52 1.75 3.45 6.65 0.7 1.7 5.6 11 21
Supply 0.1 0.19 0.51 1.75 3.45 6.65 0.7 1.7 5.6 11 21
IDD
current in mA
DS13543 Rev 2
(Sleep) Sleep mode 160 3.95 4.70 7.10 10.5 16.5 5.9 8 18 31 55
Range 1 140 3.60 4.35 6.75 10.0 16.5 5.5 8 18 30 55
fHCLK = PLL on HSE 120 3.25 4.00 6.40 9.85 16.0 5.1 7 17 30 54
16 MHz in bypass mode,
all peripherals disabled 110 2.50 3.05 4.90 7.6 12.5 3.9 5.5 13 22 40
Range 2 72 1.95 2.50 4.35 7.05 12.0 3.3 4.9 12 22 40
64 1.80 2.40 4.25 6.95 11.5 3.1 4.8 12 22 39
fHCLK = fHSE bypass mode, 55 1.25 1.70 3.15 5.3 9.15 2.2 3.4 9 16 29
Range 3
all peripherals disabled 32 0.98 1.45 2.90 5.0 8.85 1.9 3.1 8 16 29
1. Evaluated by characterization. Not tested in production.
Electrical characteristics
2. The maximum value is at VDD = 1.71 V in Sleep mode on SMPS.
203/390
Table 47. Current consumption in Sleep mode on SMPS,
204/390
Electrical characteristics
flash memory in power down, VDD = 3.0 V
Conditions Typ at VDD = 3.0 V Max at VDD = 3.0 V(1)
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
24 0.29 0.50 1.20 2.30 4.25 0.7 1.3 3.4 7 13
16 0.25 0.46 1.15 2.25 4.20 0.6 1.2 3.3 7 13
12 0.22 0.44 1.15 2.20 4.20 0.6 1.2 3.3 7 13
fHCLK = fMSI, 4 0.16 0.38 1.10 2.15 4.15 0.5 1.1 3.3 7 13
Range 4
all peripherals disabled 2 0.15 0.37 1.10 2.15 4.10 0.5 1.1 3.3 7 13
1 0.14 0.36 1.05 2.15 4.10 0.5 1.1 3.2 7 13
0.4 0.14 0.36 1.05 2.15 4.10 0.5 1.1 3.2 7 13
Supply 0.1 0.14 0.36 1.05 2.15 4.10 0.5 1.1 3.2 7 13
DS13543 Rev 2
IDD
current in mA
(Sleep) Sleep mode 160 2.80 3.35 4.95 7.20 11.5 4.0 5.5 11 19 34
Range 1 140 2.55 3.10 4.70 7.00 11.0 3.8 5.2 11 19 33
fHCLK = PLL on HSE 120 2.35 2.85 4.45 6.75 11.0 3.5 5.0 11 19 33
16 MHz in bypass mode,
all peripherals disabled 110 1.85 2.25 3.50 5.30 8.50 2.7 3.8 8 14 25
Range 2 72 1.50 1.90 3.15 4.90 8.10 2.3 3.4 7 14 24
64 1.40 1.85 3.05 4.85 8.05 2.2 3.4 7 14 24
fHCLK = fHSE bypass mode, 55 1.05 1.35 2.35 3.75 6.35 1.7 2.5 5.4 10 18
Range 3
all peripherals disabled 32 0.82 1.15 2.10 3.55 6.10 1.4 2.2 5.1 10 18
1. Evaluated by characterization. Not tested in production.
STM32U5Axxx
Table 48. SRAM1/SRAM3/SRAM5 current consumption in Run/Sleep mode with LDO and SMPS
STM32U5Axxx
Conditions Typ Max
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
Range 4 24 0.05 0.16 0.50 1.00 2.00 0.20 0.48 1.5 3.0 6.0
SRAM1 supply current in
IDD Run/Sleep mode Range 1 160 0.15 0.32 0.85 1.65 3.10 0.53 0.96 2.6 5.0 9.3
(SRAM1) (SRAM1PD = 1 versus Range 2 110 0.11 0.25 0.71 1.40 2.65 0.38 0.75 2.2 4.2 8.0
SRAM1PD = 0)
Range 3 55 0.08 0.20 0.59 1.20 2.30 0.28 0.60 1.8 3.6 6.9
Range 4 24 0.06 0.17 0.53 1.10 2.10 0.22 0.51 1.6 3.3 6.3
SRAM3 supply current in
IDD Run/Sleep mode Range 1 160 0.16 0.35 0.91 1.75 3.30 0.56 1.1 2.8 5.3 9.9
LDO mA
(SRAM3) (SRAM3PD = 1 versus Range 2 110 0.12 0.27 0.75 1.50 2.80 0.42 0.81 2.3 4.5 8.4
SRAM3PD = 0)
Range 3 55 0.08 0.21 0.63 1.25 2.45 0.30 0.63 1.9 3.8 7.4
DS13543 Rev 2
Range 4 24 0.06 0.17 0.53 1.10 2.15 0.22 0.51 1.6 3.3 6.5
SRAM5 supply current in
IDD Run/Sleep mode Range 1 160 0.16 0.35 0.92 1.75 3.30 0.58 1.1 2.8 5.3 9.9
(SRAM5) (SRAM5PD = 1 versus Range 2 110 0.12 0.27 0.76 1.50 2.85 0.42 0.81 2.3 4.5 8.6
SRAM5PD = 0)
Range 3 55 0.08 0.22 0.64 1.25 2.45 0.30 0.65 2.0 3.8 7.4
Electrical characteristics
205/390
Table 48. SRAM1/SRAM3/SRAM5 current consumption in Run/Sleep mode with LDO and SMPS (continued)
206/390
Electrical characteristics
Conditions Typ Max
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
Range 4 24 0.04 0.10 0.29 0.63 1.21 0.14 0.32 0.93 2.0 3.9
SRAM1 supply current in
IDD Run/Sleep mode Range 1 160 0.12 0.27 0.70 1.35 2.50 0.48 0.85 2.3 4.3 7.9
(SRAM1) (SRAM1PD = 1 versus Range 2 110 0.08 0.18 0.53 1.04 2.00 0.31 0.58 1.7 3.3 6.4
SRAM1PD = 0)
Range 3 55 0.05 0.14 0.41 0.83 1.60 0.21 0.44 1.3 2.7 5.1
Range 4 24 0.04 0.11 0.31 0.66 1.29 0.15 0.34 0.98 2.1 4.1
SRAM3 supply current in
IDD Run/Sleep mode Range 1 160 0.12 0.28 0.75 1.44 2.67 0.47 0.90 2.4 4.6 8.5
SMPS(1) mA
(SRAM3) (SRAM3PD = 1 versus Range 2 110 0.09 0.20 0.57 1.12 2.08 0.33 0.64 1.8 3.6 6.6
SRAM3PD = 0)
Range 3 55 0.06 0.15 0.44 0.88 1.67 0.23 0.47 1.4 2.8 5.3
DS13543 Rev 2
Range 4 24 0.04 0.11 0.32 0.67 1.30 0.15 0.34 1.0 2.2 4.2
SRAM5 supply current in
IDD Run/Sleep mode Range 1 160 0.13 0.28 0.76 1.46 2.75 0.51 0.90 2.4 4.7 8.7
(SRAM5) (SRAM5PD = 1 versus Range 2 110 0.09 0.20 0.58 1.13 2.17 0.34 0.64 1.9 3.6 6.9
SRAM5PD = 0)
Range 3 55 0.06 0.15 0.44 0.89 1.75 0.23 0.48 1.4 2.9 5.6
STM32U5Axxx
Table 48. SRAM1/SRAM3/SRAM5 current consumption in Run/Sleep mode with LDO and SMPS (continued)
STM32U5Axxx
Conditions Typ Max
Symbol
Parameter Unit
- Voltage fHCLK 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
scaling (MHz)
Range 4 24 0.02 0.06 0.18 0.38 0.73 0.08 0.18 0.53 1.2 2.2
SRAM1 supply current in
IDD Run/Sleep mode Range 1 160 0.07 0.16 0.42 0.81 1.50 0.27 0.48 1.3 2.5 4.5
(SRAM1) (SRAM1PD = 1 versus Range 2 110 0.05 0.11 0.32 0.63 1.20 0.18 0.33 0.96 1.9 3.6
SRAM1PD = 0)
Range 3 55 0.03 0.08 0.25 0.50 0.96 0.12 0.25 0.74 1.5 2.9
Range 4 24 0.02 0.06 0.19 0.40 0.78 0.09 0.19 0.56 1.2 2.4
SRAM3 supply current in
IDD SMPS Run/Sleep mode Range 1 160 0.07 0.17 0.45 0.87 1.60 0.27 0.51 1.4 2.6 4.8
mA
(SRAM3) (VDD = 3.0V) (SRAM3PD = 1 versus Range 2 110 0.05 0.12 0.34 0.67 1.25 0.19 0.36 1.1 2.1 3.8
SRAM3PD = 0)
Range 3 55 0.04 0.09 0.27 0.53 1.00 0.13 0.27 0.80 1.6 3.0
DS13543 Rev 2
Range 4 24 0.02 0.06 0.19 0.40 0.78 0.09 0.20 0.57 1.2 2.4
SRAM5 supply current in
IDD Run/Sleep mode Range 1 160 0.08 0.17 0.46 0.88 1.65 0.29 0.51 1.4 2.7 5.0
(SRAM5) (SRAM5PD = 1 versus Range 2 110 0.05 0.12 0.35 0.68 1.30 0.19 0.36 1.1 2.1 3.9
SRAM5PD = 0)
Range 3 55 0.04 0.09 0.27 0.54 1.05 0.13 0.27 0.80 1.7 3.2
1. The typical value is measured at VDD = 1.8 V. The maximum value is for 1.71 ≤ VDD ≤ 3.6V and is at VDD = 1.71 V in Run/Sleep mode on SMPS.
Electrical characteristics
207/390
Table 49. Static power consumption of flash memory banks when supplied by LDO or SMPS
208/390
Electrical characteristics
Typ Max
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
2. If no bank is in power down, the additional static consumption of the flash memory in normal mode versus low-power mode is 2 × IDD(Flash_Bank_LPM).
STM32U5Axxx
Table 50. Current consumption in Stop 0 mode on LDO
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
1.8 150 390 1100 2150 4000 550 1200 3300 6500 12000
Supply current in Stop 0 mode,
2.4 150 390 1100 2150 4000 550 1200 3300 6500 12000
regulator in range 4,
RTC disabled, 3 150 390 1100 2150 4050 550 1200 3300 6500 13000
8-Kbyte SRAM2 + ICACHE 3.3 150 390 1100 2150 4050 550 1200 3300 6500 13000
retained
3.6 155 390 1100 2150 4050 560 1200 3300 6500 13000
IDD(Stop 0) µA
1.8 190 465 1300 2600 4950 690 1400 3900 7800 15000
Supply current in Stop 0 mode, 2.4 190 465 1300 2600 5000 690 1400 3900 7800 15000
regulator in range 4,
3 190 465 1300 2600 5000 690 1400 3900 7800 15000
RTC disabled,
all SRAMs retained 3.3 190 465 1300 2600 5000 690 1400 3900 7800 15000
DS13543 Rev 2
3.6 190 470 1300 2600 5000 690 1500 3900 7800 15000
1. Evaluated by characterization. Not tested in production.
Electrical characteristics
209/390
Table 51. Current consumption in Stop 0 mode on SMPS
210/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
1.8 71 195 580 1250 2400 260 590 1800 3800 7200
Supply current in Stop 0 mode,
2.4 57 155 465 965 1850 210 470 1400 2900 5600
regulator in range 4,
RTC disabled, 3 50 135 400 790 1500 190 410 1200 2400 4500
8-Kbyte SRAM2 + ICACHE 3.3 47 125 370 730 1400 170 380 1200 2200 4200
retained
3.6 45 120 345 680 1300 170 360 1100 2100 3900
IDD(Stop 0) µA
1.8 92 230 815 1550 2950 330 690 2500 4700 8900
Supply current in Stop 0 mode, 2.4 74 185 575 1150 2250 270 560 1800 3500 6800
regulator in range 4,
3 64 165 480 965 1850 240 500 1500 2900 5600
RTC disabled,
all SRAMs retained 3.3 60 150 445 880 1700 220 450 1400 2700 5100
DS13543 Rev 2
3.6 57 145 415 825 1600 210 440 1300 2500 4800
1. Evaluated by characterization. Not tested in production.
STM32U5Axxx
Table 52. Current consumption in Stop 1 mode on LDO
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
1.8 115 340 1000 2000 3800 420 1100 3000 6000 12000
Supply current in Stop 1 mode,
2.4 125 345 1000 2000 3800 460 1100 3000 6000 12000
regulator in range 4,
RTC disabled, 3 125 345 1050 2000 3850 460 1100 3200 6000 12000
8-Kbyte SRAM2 + ICACHE 3.3 130 345 1050 2000 3850 470 1100 3200 6000 12000
retained
3.6 120 345 1050 2050 3850 440 1100 3200 6200 12000
IDD(Stop 1)
1.8 145 415 1250 2450 4750 530 1300 3800 7400 15000
2.4 155 410 1250 2450 4750 560 1300 3800 7400 15000
Supply current in Stop 1 mode,
RTC disabled, 3 160 415 1250 2450 4800 580 1300 3800 7400 15000
all SRAMs retained
3.3 160 415 1250 2450 4750 580 1300 3800 7400 15000
DS13543 Rev 2
3.6 150 405 1250 2450 4800 550 1300 3800 7400 15000
µA
1.8 115 345 1000 2000 3800 420 1100 3000 6000 12000
Supply current in Stop 1 mode, 2.4 125 345 1000 2000 3800 460 1100 3000 6000 12000
RTC(2) clocked by LSI 32 kHz,
3 125 345 1050 2000 3850 460 1100 3200 6000 12000
8-Kbyte SRAM2 + ICACHE
retained 3.3 130 350 1050 2000 3850 470 1100 3200 6000 12000
IDD(Stop 1 3.6 120 345 1050 2050 3850 440 1100 3200 6200 12000
with RTC) 1.8 115 350 1000 2000 3750 420 1100 3000 6000 12000
Supply current in Stop 1 mode,
2.4 125 350 1000 2000 3750 460 1100 3000 6000 12000
RTC(2) clocked by LSE
Electrical characteristics
bypassed at 32768 Hz, 3 120 340 1000 2000 3750 460 1100 3200 6000 12000
8-Kbyte SRAM2 + ICACHE
3.3 130 345 1000 2000 3800 470 1100 3200 6000 12000
retained
3.6 120 350 1050 2000 3800 440 1100 3200 6200 12000
211/390
Table 52. Current consumption in Stop 1 mode on LDO (continued)
212/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Supply current in Stop 1 mode, 1.8 135 340 1000 2000 3700 - - - - -
RTC(2) clocked by LSE quartz 2.4 140 340 1000 2000 3750 - - - - -
IDD(Stop 1 in low-drive mode,
3 135 340 1000 2000 3750 - - - - - µA
with RTC) RCC_BDCR.LSESYSEN = 0,
8-Kbyte SRAM2 + ICACHE 3.3 135 345 1000 2000 3750 - - - - -
retained
3.6 135 340 1050 2000 3800 - - - - -
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
DS13543 Rev 2
STM32U5Axxx
Table 53. Current consumption in Stop 1 mode on SMPS
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
1.8 71 195 580 1250 2400 260 590 1800 3800 7200
Supply current in Stop 1 mode, 2.4 57 155 465 965 1800 210 470 1400 2900 5400
RTC disabled,
3 50 135 400 790 1500 180 410 1200 2400 4500
8-Kbyte SRAM2 + ICACHE
retained 3.3 46 125 370 725 1400 170 380 1200 2200 4200
3.6 44 120 345 680 1300 160 360 1100 2100 3900
IDD(Stop 1)
1.8 91 230 815 1550 2950 330 690 2500 4700 8900
2.4 74 185 575 1150 2250 270 560 1800 3500 6800
Supply current in Stop 1 mode,
RTC disabled, 3 64 165 480 965 1850 240 500 1500 2900 5600
all SRAMs retained
3.3 60 150 445 880 1700 220 450 1400 2700 5100
DS13543 Rev 2
3.6 57 145 415 820 1600 210 440 1300 2500 4800
µA
1.8 71 195 580 1250 2400 260 590 1800 3800 7200
Supply current in Stop 1 mode, 2.4 57 155 465 965 1800 210 470 1400 2900 5400
RTC(2) clocked by LSI 32 kHz,
3 50 135 400 790 1500 190 410 1200 2400 4500
8-Kbyte SRAM2 + ICACHE
retained 3.3 47 125 370 725 1400 170 380 1200 2200 4200
IDD(Stop 1 3.6 45 120 350 680 1300 170 360 1100 2100 3900
with RTC) 1.8 71 195 585 1250 2400 260 590 1800 3800 7200
Supply current in Stop 1 mode,
2.4 57 160 470 970 1800 210 480 1500 3000 5400
RTC(2) clocked by LSE
Electrical characteristics
bypassed at 32768 Hz, 3 50 135 400 785 1500 190 410 1200 2400 4500
8-Kbyte SRAM2 + ICACHE
3.3 47 125 370 725 1400 170 380 1200 2200 4200
retained
3.6 45 120 345 680 1300 170 360 1100 2100 3900
213/390
Table 53. Current consumption in Stop 1 mode on SMPS (continued)
214/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
STM32U5Axxx
Table 54. Current consumption in Stop 2 mode on LDO
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
3.6 55 110 315 665 1350 200 330 950 2000 4100
µA
1.8 12.5 30.5 86 175 355 46 92 260 530 1100
Supply current in Stop 2 mode, 2.4 13 27 86 175 355 47 81 260 530 1100
RTC(2) clocked by LSI 32 kHz,
3 12 29.5 87.5 180 360 44 89 270 540 1100
8-Kbyte SRAM2 + ICACHE
retained 3.3 13.5 29 89.5 180 365 49 87 270 540 1100
Electrical characteristics
3 11 29 87 180 360 40 87 270 540 1100
8-Kbyte SRAM2 + ICACHE
retained 3.3 13 29 89 180 365 47 87 270 540 1100
3.6 12.5 32 91.5 185 375 46 96 280 560 1200
215/390
Table 54. Current consumption in Stop 2 mode on LDO (continued)
216/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
retained
3.6 13.5 32 91.5 185 365 - - - - -
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
Table 55. SRAM static power consumption in Stop 2 when supplied by LDO
Typ Max(1)
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
STM32U5Axxx
IDD(SRAM2_56kB)(3) 1.0 2.4 7.8 16.5 32.5 3.40 7.10 24.0 50.0 98.0
(SRAM2PDS2 = 1 versus SRAM2PDS2 = 0)
Table 55. SRAM static power consumption in Stop 2 when supplied by LDO (continued)
STM32U5Axxx
Typ Max(1)
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Electrical characteristics
PKA SRAM static consumption
IDD(PKARAM) 0.1 0.2 0.7 1.3 2.7 0.37 0.48 2.1 3.9 8.0
(PKARAMPDS = 1 versus PKARAMPDS = 0)
1. Evaluated by characterization. Not tested in production.
2. SRAM1 total consumption is 12 x IDD(SRAM1_64KB).
3. SRAM2 total consumption is IDD(SRAM2_8KB) + IDD(SRAM2_56KB).
217/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
3.6 17.5 37.5 105 225 470 62 120 320 670 1400
µA
1.8 6.65 15.5 47 97.5 200 24 47 140 290 590
Supply current in Stop 2 mode, 2.4 5.45 13 39.5 82.5 170 20 39 120 250 500
RTC(2) clocked by LSI 32 kHz,
3 5.10 12 36 75.5 155 19 36 110 230 460
8-Kbyte SRAM2 + ICACHE
retained 3.3 5.15 12 35 72.5 150 19 36 110 220 440
IDD(Stop 2 3.6 5.85 12.5 35.5 72.5 150 21 36 110 210 440
with RTC) 1.8 6.5 15.5 47 97.5 200 24 47 140 290 590
Supply current in Stop 2 mode, 2.4 5.2 12.5 39.5 82 170 19 38 120 250 500
RTC(2) clocked by LSI 250 Hz,
3 4.75 11.5 36 75 155 17 34 110 220 460
8-Kbyte SRAM2 + ICACHE
retained 3.3 4.8 11.5 34.5 72.5 150 17 34 110 220 440
3.6 5.4 12.5 35 72 150 19 36 110 210 440
STM32U5Axxx
Table 56. Current consumption in Stop 2 mode on SMPS (continued)
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
retained
3.6 6.1 12.5 35.5 71.5 145 - - - - -
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
Table 57. SRAM static power consumption in Stop 2 when supplied by SMPS
Typ Max(1)
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Electrical characteristics
SRAM2 8KB page 1 static consumption
IDD(SRAM2_8kB)(3) 0.1 0.2 0.5 1.3 2.4 0.28 0.51 1.60 3.80 7.2
(SRAM2PDS1 = 1 versus SRAM2PDS1 = 0)
µA
(3) SRAM2 56 KB page 2 static consumption
IDD(SRAM2_56kB) 0.4 0.9 2.9 6.2 13.0 1.50 2.90 8.60 19.0 39.0
(SRAM2PDS2 = 1 versus SRAM2PDS2 = 0)
SRAM3 64 KB page x static consumption
IDD(SRAM3_64kB)(4) 0.4 0.7 2.2 4.7 9.7 1.30 2.20 6.50 14.0 30.0
219/390
Electrical characteristics
Typ Max(1)
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
µA
DMA2D SRAM static consumption
IDD(DMA2DRAM) (DMA2DRAMPDS = 1 versus 0.01 0.02 0.09 0.31 0.41 0.04 0.07 0.27 0.93 1.3
DMA2DRAMPDS = 0)
FMAC, FDCAN and USB peripherals SRAM
IDD(PRAM) static consumption 0.05 0.09 0.26 0.67 1.15 0.18 0.27 0.78 2.00 3.5
(PRAMPDS = 1 versus PRAMPDS = 0)
Graphic peripherals (LTDC, GFXMMU) SRAM
IDD(GPRAM) static consumption 0.04 0.08 0.28 0.61 1.15 0.14 0.25 0.83 1.90 3.5
(GPRAMPDS = 1 versus GPRAMPDS = 0)
PKA SRAM static consumption
IDD(PKARAM) 0.03 0.07 0.24 0.60 1.05 0.11 0.23 0.72 1.80 3.2
(PKARAMPDS = 1 versus PKARAMPDS = 0)
1. Evaluated by characterization. Not tested in production.
2. SRAM1 total consumption is 12 x IDD(SRAM1_64KB).
3. SRAM2 total consumption is IDD(SRAM2_8KB) + IDD(SRAM2_56KB).
STM32U5Axxx
4. SRAM3 total consumption is 13 x IDD(SRAM3_64KB).
5. SRAM5 total consumption is 13 x IDD(SRAM5_64KB).
Table 58. Current consumption in Stop 3 mode on LDO
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
IDD(Stop 3 3.6 8.15 20.5 66.5 140 290 29 60 200 420 860
with RTC) 1.8 5.55 18.5 60.5 130 270 20 56 180 390 800
Supply current in Stop 3 mode, 2.4 6.2 17 61 130 275 23 51 190 390 820
RTC(2) clocked by LSI 250 Hz,
Electrical characteristics
3 5.95 17 62 135 280 22 51 210 400 830
8-Kbyte SRAM2 + ICACHE
retained 3.3 7.35 19 63.5 135 285 26 57 190 400 840
3.6 7.3 20 66 140 290 26 59 200 420 860
221/390
Table 58. Current consumption in Stop 3 mode on LDO (continued)
222/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
retained
3.6 9.05 20 66 140 285 - - - - -
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
STM32U5Axxx
Table 59. SRAM static power consumption in Stop 3 when supplied by LDO
STM32U5Axxx
Typ Max(1)
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Electrical characteristics
DMA2DRAMPDS = 0)
223/390
Table 59. SRAM static power consumption in Stop 3 when supplied by LDO (continued)
224/390
Electrical characteristics
Typ Max(1)
Symbol Parameter Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
STM32U5Axxx
Table 60. Current consumption in Stop 3 mode on SMPS
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Electrical characteristics
3 2.1 6.15 21.5 47 100 7.3 18 63 140 290
8-Kbyte SRAM2 + ICACHE
retained 3.3 2.35 6.4 21.5 46.5 100 8 19 62 140 290
3.6 3.1 7.5 22.5 47.5 100 11 21 64 140 290
225/390
Table 60. Current consumption in Stop 3 mode on SMPS (continued)
226/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
retained
3.6 3.65 7.75 23 47.5 98.5 - - - - -
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
Table 61. SRAM static power consumption in Stop 3 when supplied by SMPS
Parameter Typ Max(1)
Symbol Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
STM32U5Axxx
IDD(SRAM2_56kB) (2)
0.2 0.6 2.2 4.9 11.0 0.69 1.80 6.60 15.0 33.0
(SRAM2PDS2 = 1 versus SRAM2PDS2 = 0)
SRAM3 64 KB page x static consumption
IDD(SRAM3_64kB)(4) 0.2 0.5 1.8 4.1 9.4 0.60 1.50 5.40 13.0 29.0
(SRAM3PDSx = 1 versus SRAM3PDSx = 0)
Table 61. SRAM static power consumption in Stop 3 when supplied by SMPS (continued)
STM32U5Axxx
Parameter Typ Max(1)
Symbol Unit
25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
µA
DMA2D SRAM static consumption
IDD(DMA2DRAM) (DMA2DRAMPDS = 1 versus 0.01 0.02 0.08 0.13 0.70 0.03 0.06 0.25 0.39 2.1
DMA2DRAMPDS = 0)
FMAC, FDCAN and USB peripherals SRAM static
IDD(PRAM) consumption 0.02 0.05 0.20 0.40 1.30 0.07 0.14 0.59 1.20 3.9
(PRAMPDS = 1 versus PRAMPDS = 0)
Graphic peripherals (LTDC, GFXMMU) SRAM
IDD(GPRAM) static consumption 0.02 0.05 0.22 0.38 1.35 0.06 0.17 0.65 1.20 4.1
(GPRAMPDS = 1 versus GPRAMPDS = 0)
PKA SRAM static consumption
IDD(PKARAM) 0.02 0.05 0.21 0.39 1.25 0.06 0.15 0.63 1.20 3.8
(PKARAMPDS = 1 versus PKARAMPDS = 0)
Electrical characteristics
1. Evaluated by characterization. Not tested in production.
2. SRAM1 total consumption is 12 x IDD(SRAM1_64KB).
3. SRAM2 total consumption is IDD(SRAM2_8KB) + IDD(SRAM2_56KB).
4. SRAM3 total consumption is 13 x IDD(SRAM3_64KB).
5. SRAM5 total consumption is 13 x IDD(SRAM5_64KB).
227/390
Table 62. Current consumption in Standby mode
228/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Supply current in
Standby mode (backup 3.6 1.7 3.5 8.85 18 39 5.10 8.6 22 44 94
IDD(Standby) µA
registers retained), 1.8 0.54 1.1 3.8 9.25 23 0.76 2.2 8.7 22 53
RTC disabled
2.4 0.69 1.25 4.1 9.8 24 0.95 2.4 9.3 23 56
With independent
watchdog clocked 3 0.955 1.75 5.35 12.5 29 1.60 3.5 13 29 69
by LSI 32 kHz
3.3 1.4 2.45 6.75 14.5 33.5 2.70 5.2 16 35 80
3.6 2.4 4.05 9.45 18.5 39.5 5.60 9.1 23 45 95
1.8 0.355 0.94 3.65 9 23 0.70 2.2 8.5 22 53
2.4 0.39 1 3.85 9.45 23.5 0.80 2.3 9.0 23 56
With independent
watchdog clocked 3 0.565 1.4 5 12 29 1.30 3.3 12 29 69
by LSI 250 Hz
3.3 0.92 2.05 6.35 14 33 2.40 4.9 16 34 80
3.6 1.85 3.6 9 18 39 5.20 8.8 22 44 95
STM32U5Axxx
Table 62. Current consumption in Standby mode (continued)
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Supply current in
IDD(Standby Standby mode (backup 3.6 1.85 3.65 9.05 18 39 5.30 8.8 22 44 95
µA
with RTC) registers retained), 1.8 0.48 1.05 3.75 9.1 22.5 0.87 2.3 8.8 22 54
RTC enabled
2.4 0.555 1.15 4 9.6 23.5 1.10 2.6 9.3 23 56
RTC(2) clocked by
LSE bypassed at 3 0.785 1.6 5.2 12 29 1.70 3.7 12 29 69
32768 Hz
3.3 1.2 2.3 6.55 14.5 33 2.80 5.3 16 35 80
3.6 2.2 3.9 9.25 18.5 39 5.70 9.2 23 45 95
1.8 0.65 1.2 3.9 9.25 22.5 - - - - -
2.4 0.69 1.3 4.1 9.7 23.5 - - - - -
RTC(2) clocked by
Electrical characteristics
LSE quartz in 3 0.885 1.7 5.3 12 28.5 - - - - -
low-drive mode
3.3 1.25 2.35 6.65 14.5 32.5 - - - - -
3.6 2.25 3.9 9.3 18.5 38.5 - - - - -
229/390
Table 62. Current consumption in Standby mode (continued)
230/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
1.8 0.14 0.26 0.5 0.95 2 0.5 0.8 1.5 2.9 6.0
Supply current to be 2.4 0.135 0.26 0.5 0.65 2 0.5 0.8 1.5 2.0 6.0
added in Standby mode
IDD(BKPSRAM) - 3 0.13 0.25 0.5 0.5 1.5 0.5 0.8 1.5 1.5 4.5
when backup SRAM is
retained 3.3 0.135 0.2 0.5 1 2 0.5 0.6 1.5 3.0 6.0
3.6 0.15 0.25 0.5 1 2 0.6 0.8 1.5 3.0 6.0
1.8 1.695 5.36 15.5 32.1 65.5 6.2 17 47 97 200
Supply current to be 2.4 1.715 5.41 15.3 32.15 65 6.2 17 46 97 200
added in Standby mode
IDD(SRAM2) 3 1.755 5.45 15.65 32 65.5 6.4 17 47 96 200 µA
when full SRAM2 is
retained 3.3 1.755 6.25 15.3 32.5 66 6.4 19 46 98 200
DS13543 Rev 2
STM32U5Axxx
Table 62. Current consumption in Standby mode (continued)
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Electrical characteristics
231/390
Table 63. Current consumption in Shutdown mode
232/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
Shutdown mode 3.6 2.05 3.75 8.90 17.50 36.5 5.00 8.9 22.0 44 92
IDD(Shutdown (backup registers
with RTC) retained), 1.8 0.55 1.10 3.60 8.45 20.0 - - - - -
RTC enabled 2.4 0.59 1.15 3.80 8.90 21.0 - - - - -
RTC(2) clocked by
LSE quartz in 3 0.78 1.60 4.95 11.50 26.0 - - - - -
low-drive mode
3.3 1.15 2.20 6.30 13.50 30.0 - - - - -
3.6 2.15 3.80 8.95 17.50 36.0 - - - - -
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
STM32U5Axxx
Table 64. Current consumption in VBAT mode
STM32U5Axxx
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
1.8 0.08 0.23 0.93 2.30 5.65 0.24 0.68 2.6 5.8 15
Supply current in 2.4 0.08 0.24 0.97 2.35 5.80 0.24 0.70 2.6 5.9 15
VBAT mode (backup
IDD(VBAT) - 3 0.12 0.33 1.25 2.90 6.90 0.36 0.83 3.2 7.3 18
registers retained),
RTC disabled 3.3 0.20 0.51 1.80 4.25 10 0.61 1.30 4.5 11 25
3.6 0.40 0.82 2.35 4.95 11 1.30 2.10 5.9 13 28
1.8 0.39 0.55 1.25 2.65 5.95 0.58 1.10 2.9 6.2 15
2.4 0.47 0.63 1.40 2.80 6.20 0.67 1.30 3.1 6.4 15
RTC(2) clocked by LSE
3 0.62 0.82 1.75 3.45 7.40 0.91 1.40 3.7 7.9 18 µA
bypassed at 32768 Hz
3.3 0.78 1.05 2.35 4.80 10.50 1.30 1.90 5.2 12 26
DS13543 Rev 2
Supply current in
IDD(VBAT VBAT mode (backup 3.6 1.05 1.40 2.95 5.60 11.50 2.00 2.70 6.6 14 29
with RTC) registers retained), 1.8 0.30 0.46 1.20 2.55 5.85 0.49 1.10 2.8 6.1 15
RTC enabled
2.4 0.34 0.51 1.25 2.70 6.10 0.53 1.10 3.0 6.3 15
RTC(2) clocked by LSE
bypassed at 32768 Hz, 3 0.46 0.65 1.60 3.30 7.20 0.74 1.30 3.6 7.7 18
RTC_CALR.LPCAL = 1
3.3 0.60 0.87 2.20 4.65 10.5 1.10 1.70 5.0 12 26
3.6 0.87 1.20 2.75 5.40 11.5 1.80 2.50 6.4 13 29
Electrical characteristics
233/390
Table 64. Current consumption in VBAT mode (continued)
234/390
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD (V) 25°C 55°C 85°C 105°C 125°C 30°C 55°C 85°C 105°C 125°C
STM32U5Axxx
STM32U5Axxx Electrical characteristics
I SW = V DDIOx × f SW × C
where:
• ISW is the current sunk by a switching I/O to charge/discharge the capacitive load.
• VDDIOx is the I/O supply voltage.
• fSW is the I/O switching frequency.
• C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS.
• CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
• The ambient operating temperature and supply voltage conditions are summarized
in Table 33: General operating conditions.
• The power consumption of the digital part of the on-chip peripherals is given in the table
below. The power consumption of the analog part of the peripherals (where applicable)
is indicated in each related section of the datasheet.
µA/MHz
ICACHE 0.94 0.79 0.72 0.63 - 0.42 0.35 0.29 0.23 -
MDF1 8.05 7.29 6.62 5.89 - 3.99 3.28 2.75 2.19 -
(1)
MDF1 indep 0.92 0.87 0.79 0.69 - 0.47 0.39 0.33 0.26 -
RAMCFG 2.26 2.00 1.81 1.60 - 1.07 0.90 0.75 0.59 -
SRAM1 1.20 1.02 0.92 0.80 - 0.55 0.45 0.38 0.29 -
TSC 1.37 1.20 1.08 0.95 - 0.64 0.54 0.45 0.35 -
AHB2_1 1.02 0.78 0.71 0.62 - 0.42 0.34 0.29 0.24 -
ADC12 4.53 4.13 3.71 3.38 - 2.22 1.85 1.56 1.22 -
ADC12 indep(1) 0.85 0.81 0.73 0.66 - 0.44 0.36 0.30 0.25 -
AES 2.95 2.67 2.39 2.20 - 1.44 1.20 1.00 0.77 -
AHB2-1
µA/MHz
SDMMC1
1.67 1.53 1.38 1.30 - 0.82 0.69 0.58 0.52 -
indep(1)
SDMMC2 12.82 11.68 10.56 9.50 - 6.31 5.26 4.41 3.48 -
SDMMC2
1.63 1.49 1.36 1.26 - 0.81 0.67 0.57 0.51 -
indep(1)
SRAM2 1.22 1.10 0.97 0.94 - 0.59 0.49 0.42 0.30 -
SRAM3 2.31 2.10 1.86 1.74 - 1.13 0.93 0.79 0.60 -
AHB2_2 0.18 0.12 0.10 0.09 - 0.10 0.05 0.04 0.02 -
FMC 6.71 6.13 5.52 5.00 - 3.30 2.74 2.30 1.82 -
HSPI1 3.36 3.05 2.72 2.51 - 1.65 1.36 1.14 0.88 -
(1)
HSPI1 indep 2.37 2.12 1.91 1.71 - 1.15 0.95 0.80 0.62 -
OCTOSPI1 1.44 1.30 1.15 1.07 - 0.70 0.58 0.48 0.36 -
AHB2-2
OCTOSPI1
1.10 1.00 0.90 0.81 - 0.54 0.45 0.38 0.29 -
indep(1)
OCTOSPI2 1.47 1.33 1.17 1.12 - 0.72 0.59 0.49 0.37 -
OCTOSPI2
1.28 1.16 1.05 0.94 - 0.63 0.53 0.44 0.34 -
indep(1)
SRAM5 2.16 1.96 1.74 1.62 - 1.06 0.87 0.73 0.56 -
DAC1 indep(1) 1.00 0.92 0.83 0.75 0.75 0.50 0.42 0.35 0.27 0.27
GTZC2 1.31 1.20 1.09 0.96 - 0.60 0.53 0.45 0.34 -
LPDMA1 0.40 0.38 0.34 0.29 0.41 0.16 0.16 0.14 0.11 0.15
LPGPIO1 0.09 0.08 0.07 0.06 0.18 0.04 0.03 0.03 0.02 0.06
PWR 0.18 0.17 0.15 0.13 - 0.09 0.07 0.06 0.05 -
SRAM4 1.00 0.92 0.84 0.74 - 0.49 0.40 0.35 0.26 -
APB1 1.16 0.90 0.79 0.76 - 0.48 0.38 0.33 0.24 -
CRS 0.36 0.34 0.31 0.30 - 0.22 0.15 0.13 0.11 -
FDCAN1 4.88 4.46 4.06 3.64 - 2.41 2.01 1.69 1.36 -
FDCAN1
µA/MHz
2.33 2.21 2.12 1.89 - 1.28 1.07 0.88 0.71 -
indep(1)
I2C1 0.87 0.81 0.74 0.67 - 0.43 0.36 0.30 0.25 -
(1)
I2C1 indep 2.10 1.91 1.73 1.55 - 1.03 0.86 0.72 0.56 -
I2C2 3.04 2.78 2.53 2.28 - 1.50 1.24 1.05 0.85 -
(1)
I2C2 indep 2.13 1.98 1.80 1.61 - 1.12 0.89 0.75 0.59 -
I2C4 0.92 0.85 0.77 0.71 - 0.46 0.38 0.32 0.26 -
APB1
(1)
I2C4 indep 2.21 2.02 1.83 1.64 - 1.09 0.91 0.76 0.60 -
I2C5 3.15 2.88 2.61 2.33 - 1.56 1.29 1.09 0.88 -
I2C5 indep(1) 2.31 2.12 1.92 1.72 - 1.14 0.95 0.80 0.63 -
I2C6 3.02 2.77 2.50 2.23 - 1.53 1.23 1.04 0.84 -
I2C6 indep(1) 2.19 2.00 1.81 1.61 - 1.08 0.90 0.75 0.59 -
LPTIM2 1.36 1.23 1.12 1.02 - 0.66 0.55 0.46 0.38 -
LPTIM2
4.01 3.66 3.32 2.97 - 1.98 1.64 1.38 1.10 -
Indep(1)
LTDC 10.29 9.38 8.49 7.59 - 5.07 4.22 3.54 2.80 -
SPI2 1.89 1.71 1.54 1.42 - 0.91 0.76 0.64 0.53 -
SPI2 indep(1) 0.71 0.64 0.58 0.51 - 0.35 0.29 0.24 0.19 -
µA/MHz
USART6 6.61 6.03 5.48 4.89 - 3.25 2.71 2.29 1.82 -
USART6
4.49 4.11 3.73 3.32 - 2.21 1.85 1.55 1.24 -
indep(1)
WWDG 0.47 0.45 0.39 0.34 - 0.23 0.19 0.17 0.14 -
APB2 0.83 0.59 0.51 0.47 - 0.31 0.24 0.22 0.16 -
DSI 13.76 12.53 11.33 10.14 - 6.78 5.65 4.74 3.86 -
SAI1 1.68 1.51 1.36 1.22 - 0.81 0.68 0.56 0.45 -
(1)
SAI1 indep 1.30 1.18 1.08 0.95 - 0.64 0.53 0.45 0.34 -
SAI2 1.77 1.57 1.42 1.29 - 0.85 0.71 0.59 0.47 -
SAI2 indep(1) 1.40 1.29 1.17 1.00 - 0.69 0.58 0.49 0.38 -
APB2
USART1
3.97 3.63 3.31 2.94 - 1.96 1.63 1.37 1.10 -
indep(1)
APB3 0.34 0.21 0.17 0.16 - 0.11 0.08 0.07 0.06 -
COMP 0.23 0.21 0.19 0.17 0.14 0.11 0.09 0.08 0.06 0.05
I2C3 0.64 0.59 0.52 0.47 0.48 0.32 0.26 0.22 0.17 0.17
(1)
I2C3 indep 1.73 1.59 1.42 1.27 1.28 0.90 0.71 0.60 0.45 0.47
LPTIM1 1.08 0.98 0.89 0.78 0.81 0.57 0.44 0.37 0.29 0.29
LPTIM1
3.03 2.74 2.47 2.20 2.24 1.48 1.21 1.03 0.81 0.82
indep(1)
LPTIM3 1.03 0.95 0.85 0.76 0.77 0.51 0.43 0.35 0.28 0.28
LPTIM3
µA/MHz
2.87 2.54 2.32 2.06 2.13 1.41 1.15 0.98 0.77 0.78
indep(1)
LPTIM4 0.65 0.60 0.54 0.48 0.49 0.33 0.27 0.22 0.18 0.18
APB3
LPTIM4
1.69 1.54 1.46 1.28 1.34 0.88 0.72 0.63 0.47 0.49
indep(1)
LPUART1 1.27 1.16 1.04 0.93 0.95 0.67 0.52 0.44 0.34 0.35
LPUART1
2.12 1.94 1.76 1.58 1.58 1.05 0.87 0.73 0.57 0.58
indep(1)
OPAMP 0.24 0.22 0.18 0.17 0.18 0.11 0.10 0.08 0.07 0.06
RTC 1.87 1.70 1.52 1.38 1.39 0.93 0.77 0.64 0.50 0.51
SPI3 1.13 1.01 0.90 0.80 0.81 0.54 0.45 0.37 0.30 0.30
(1)
SPI3 indep 0.48 0.44 0.40 0.35 0.35 0.23 0.20 0.16 0.12 0.13
SYSCFG 0.37 0.30 0.27 0.24 - 0.17 0.14 0.11 0.09 -
VREFBUF 0.14 0.12 0.11 0.10 0.11 0.07 0.06 0.05 0.04 0.04
1. Indep stands for independent clock domain.
Nb of
Wake-up time from SLEEP_PD = 0 14 17 CPU
twu(Sleep) cycles
Sleep to Run mode
SLEEP_PD = 1 with MSI = 24 MHz 8.1 9
Wake-up in FLASH, range 4,
FLASHFWU = 1 and
MSI 24 MHz 2.6 3
SRAM4FWU = 1 in PWR_CR2
ICACHE OFF
Wake-up in FLASH, range 4, MSI 24 MHz 11.0 12
Wake-up time from
FLASHFWU = 0 and
twu(Stop 0) Stop 0 to Run mode HSI 16 MHz 10.7 12
SRAM4FWU = 0 in PWR_CR2
All SRAMs retained ICACHE OFF MSI 1 MHz 38.1 40
MSI 24 MHz 5.0 6
Wake-up in SRAM2, range 4,
FLASHFWU = 0 and HSI 16 MHz 6.9 8
SRAM4FWU = 0 in PWR_CR2
MSI 1 MHz 34.1 36
Wake-up in FLASH,
FLASHFWU = 1 and
MSI 24 MHz 13.4 17
SRAM4FWU = 1 in PWR_CR2
ICACHE OFF
Wake-up in FLASH, MSI 24 MHz 21.9 25
Wake-up time from
FLASHFWU = 0 and
twu(Stop 1) Stop 1 to Run mode HSI 16 MHz 21.6 25
SRAM4FWU = 0 in PWR_CR2 µs
All SRAMs retained ICACHE OFF MSI 1 MHz 48.9 53
MSI 24 MHz 15.8 19
Wake-up in SRAM2, range 4,
FLASHFWU = 0 and HSI 16 MHz 17.7 21
SRAM4FWU = 0 in PWR_CR2
MSI 1 MHz 44.9 49
Wake-up in FLASH,
SRAM4FWU = 1 in PWR_CR2 MSI 24 MHz 20.3 24
ICACHE OFF
MSI 24 MHz 22.9 26
Wake-up in FLASH,
Wake-up time from
SRAM4FWU = 0 in PWR_CR2 HSI 16 MHz 22.7 27
twu(Stop 2) Stop 2 to Run mode
ICACHE OFF
All SRAMs retained MSI 1 MHz 58.0 63
MSI 24 MHz 16.9 20
Wake-up in SRAM2, range 4,
HSI 16 MHz 19.0 23
SRAM4FWU = 0 in PWR_CR2
MSI 1 MHz 54.0 59
Wake-up time from Wake-up in FLASH,
twu(Stop 3) Stop 3 to Run mode FSTEN = 0 in PWR_CR3 MSI 24 MHz 55.3 132
All SRAMs retained ICACHE OFF
Nb of
Wake-up time from SLEEP_PD = 0 14 17 CPU
twu(Sleep) cycles
Sleep to Run mode
SLEEP_PD = 1 with MSI = 24 MHz 8.0 9
Wake-up in FLASH, range 4,
FLASHFWU = 1 and
MSI 24 MHz 2.6 3
SRAM4FWU = 1 in PWR_CR2
ICACHE OFF
Wake-up in FLASH, range 4, MSI 24 MHz 11.0 12
Wake-up time from µs
FLASHFWU = 0 and
twu(Stop 0) Stop 0 to Run mode HSI 16 MHz 10.7 12
SRAM4FWU = 0 in PWR_CR2
All SRAMs retained ICACHE OFF MSI 1 MHz 38.1 40
MSI 24 MHz 5.0 6
Wake-up in SRAM2, range 4,
FLASHFWU = 0 and HSI 16 MHz 6.8 8
SRAM4FWU = 0 in PWR_CR2
MSI 1 MHz 34.1 36
Wake-up in FLASH,
FLASHFWU = 1 and
MSI 24 MHz 7.8 9
SRAM4FWU = 1 in PWR_CR2
ICACHE OFF
Wake-up in FLASH MSI 24 MHz 16.2 18
Wake-up time from
FLASHFWU = 0 and
twu(Stop 1) Stop 1 to Run mode HSI 16 MHz 15.9 17
SRAM4FWU = 0 in PWR_CR2
All SRAMs retained ICACHE OFF MSI 1 MHz 43.2 46
MSI 24 MHz 10.1 12
Wake-up in SRAM2, range 4,
FLASHFWU = 0 and HSI 16 MHz 12.0 14
SRAM4FWU = 0 in PWR_CR2
MSI 1 MHz 39.3 42
Wake-up in FLASH
SRAM4FWU = 1 in PWR_CR2 MSI 24 MHz 17.6 20
ICACHE OFF
MSI 24 MHz 20.2 22
Wake-up in FLASH
Wake-up time from
SRAM4FWU = 0 in PWR_CR2 HSI 16 MHz 20.0 22
twu(Stop 2) Stop 2 to Run mode
ICACHE OFF
All SRAMs retained MSI 1 MHz 55.1 59
MSI 24 MHz 14.2 16
Wake-up in SRAM2, range 4,
HSI 16 MHz 16.2 18
SRAM4FWU = 0 in PWR_CR2
MSI 1 MHz 51.1 55
µs
Wake-up in FLASH,
FSTEN = 0 in PWR_CR3 MSI 24 MHz 131.4 164
ICACHE OFF
MSI 24 MHz 30.9 36
Wake-up in FLASH,
Wake-up time from
FSTEN = 1 in PWR_CR3 HSI 16 MHz 30.6 35
twu(Stop 3) Stop 3 to Run mode
ICACHE OFF
All SRAMs retained MSI 1 MHz 67.3 101
MSI 24 MHz 25.0 31
Wake-up in SRAM2, range 4 HSI 16 MHz 26.8 32
MSI 1 MHz 62.8 94
Wake-up in FLASH,
MSI 4 MHz 57.3 88
Wake-up time from FSTEN = 0 in PWR_CR3
twu(Standby
Standby with SRAM2
with SRAM2) Wake-up in FLASH, MSI 4 MHz 57.9 87
to Run mode
FSTEN = 1 in PWR_CR3 MSI 1 MHz 165.2 246
Wake-up in FLASH,
MSI 4 MHz 329.2 417
FSTEN = 0 in PWR_CR3
Wake-up time from
twu(Standby)
Standby to Run mode Wake-up in FLASH, MSI 4 MHz 94.8 125
FSTEN = 1 in PWR_CR3 MSI 1 MHz 200.5 282
Wake-up time from
twu(Shutdown) - MSI 4 MHz 683.2 718
Shutdown to Run mode
Range 4 15.6 19
Range 3 14.5 18
tLDO(2) SMPS to LDO transition time
Range 2 14 18
Range 1 13.9 17
Range 4 13.1 16
Range 3 16.5 19
tSMPS(2) LDO to SMPS transition time
Range 2 16.1 19
Range 1 15.9 19
µs
LDO 18 21
Range 4 to range 3
SMPS 24.3 28
LDO 12.2 15
Range 3 to range 2
SMPS 12.2 15
tVOST(3)
LDO 11.8 14
Range 2 to range 1
SMPS 11.8 14
LDO 40.9 43
Range 4 to range 1
SMPS 47 55
1. Evaluated by characterization. Not tested in production.
2. Time to REGS change in PWR_SVMSR.
3. Time to VOSRDY = 1 in PWR_VOSR.
Voltage scaling
- 4(2) - 50
User external clock range 1, 2, 3
fHSE_ext MHz
source frequency Voltage scaling
- 4(2) - 25
range 4
OSC_IN input pin
VHSEH - 0.7 × VDD - VDD
high-level voltage
V
OSC_IN input pin
VHSEL - VSS - 0.3 × VDD
low-level voltage
Digital mode
(HSEBYP = 1, Voltage scaling
7 - -
tw(HSEH) HSEEXT = 1) range 1, 2, 3
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
range 4
DuCyHSE OSC_IN duty cycle - 45 - 55 %
VHSE_ext_ OSC_IN peak-to-peak
- 0.2 - 2/3 VDD
PP amplitude V
Analog mode
VHSE_ext OSC_IN input range (HSEBYP = 1, - 0 - VDD
HSEEXT = 0)
tr(HSE), 0.05 / 0.3 /
OSC_IN rise and fall time - - ns
tf(HSE) fHSE_ext fHSE_ext
1. Specified by design. Not tested in production.
2. Only for Analog mode. No minimum value in digital mode.
Figure 27. AC timing diagram for high-speed external clock source (digital mode)
VHSE
tw(HSEH)
VHSEH
70%
30%
VHSEL
t
THSE tw(HSEL)
MSv67850V3
Figure 28. AC timing diagram for high-speed external clock source (analog mode)
VHSE_ext
90%
VHSE_ext_PP
10%
tf(HSE) tr(HSE)
t
tHSE_ext = 1/fHSE_ext
MSv71538V1
Figure 29. AC timing diagram for low-speed external square clock source
VLSE_ext
tw(LSEH)
VLSEH
70%
VLSE_ext_PP
30%
VLSEL
t
tLSE = 1/fLSE_ext tw(LSEL)
MSv67851V3
Figure 30. AC timing diagram for low-speed external sinusoidal clock source
VLSE_ext
VLSE_ext_PP
tLSE_ext = 1/fLSE_ext
MSv69160V1
Note: For information on selecting the crystal, refer to the application note ‘Oscillator design guide
for STM8AF/AL/S, STM32 MCUs and MPUs’ (AN2867).
OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain
MS19876V1
Internal stray
CS_PARA parasitic - - 3 - pF
capacitance(3)
tSU(LSE)(4) Startup time VDD is stabilized - 2 - s
1. Specified by design. Not tested in production.
2. Refer to the note below this table.
3. CS_PARA is the equivalent capacitance seen by the crystal due to OSC32_IN and OSC32_OUT internal parasitic
capacitances.
4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Note: For information on selecting the crystal, refer to the application note ‘Oscillator design guide
for STM8AF/AL/S, STM32 MCUs and MPUs’ (AN2867).
OSC32_OUT
CL2
Note: CL1 and CL2 are external load capacitances. Cs (stray capacitance) is the sum of the device OSC32_IN/OSC32_OUT pins
equivalent parasitic capacitance (CS_PARA), and the PCB parasitic capacitance. MSv70418V1
Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
MSI range 0
47.74 48 48.70
(MSIRC0)
MSI range 1 23.87 24 24.35
MSI range 2 15.91 16 16.23
MSI range 3 11.93 12 12.17
MSI range 4
3.98 4 4.06
(MSIRC1)
MSI range 5 1.99 2 2.03 MHz
MSI range 6 1.33 1.33 1.35
MSI range 7 0.99 1 1.01
MSI mode
MSI range 8
3.05 3.08 3.12
(MSIRC2)
MSI range 9 1.53 1.54 1.56
MSI range 10 1.02 1.03 1.04
MSI range 11 0.76 0.77 0.78
MSI range 12
397.68 400 405.71
(MSIRC3)
MSI frequency
VDD = 3 V MSI range 13 198.84 200 202.86
fMSI after factory kHz
TJ = 30 °C
calibration MSI range 14 132.56 133 135.24
MSI range 15 99.42 100 101.43
MSI range 0
- 48.005 -
(MSIRC0)
MSI range 1 - 24.003 -
MSI range 2 - 16.002 -
MSI range 3 - 12.001 -
MSI range 4
- 3.998 -
PLL (MSIRC1)
mode(2) MSI range 5 - 1.999 - MHz
XTAL =
32.768 kHz MSI range 6 - 1.333 -
MSI range 7 - 0.999 -
MSI range 8
- 3.08 -
(MSIRC2)
MSI range 9 - 1.54 -
MSI range 10 - 1.027 -
MSI range 11 - 0.77 -
MSI range 12
- 393 -
(MSIRC3)
MSI frequency PLL mode
VDD = 3 V MSI range 13 - 196.6 -
fMSI (cont’d) after factory XTAL = kHz
TJ = 30 °C
calibration 32.768 kHz MSI range 14 - 131 -
MSI range 15 - 98.3 -
MSI range 0, 4, 8, or 12 38 - 62
(3)
DuCyMSI Duty cycle MSI range 2, 6, 10, or 14 31 - 69
Other MSI ranges 48 - 52
User trimming
TRIMMSI - - 0.4 -
step
MSI oscillator
frequency drift
(4) over
∆ TEMP(MSI) MSI mode TJ = –40 to 130 °C -4 - 2
temperature
(reference is
30 °C)
13
MSIRC0
MSI range 0 to 3 - - cycles +
11 MSI
cycles
4
MSIRC1
MSI range 4 to 7 - - cycles +
11 MSI
MSI oscillator cycles
tsu(MSI)(3)
startup time(5) 4
cycles
MSIRC2
MSI range 8 to 11 - - cycles +
11 MSI
cycles
4
MSIRC3
MSI range 12 to 15 - - cycles +
11 MSI
cycles
3
MSI oscillator destina-
tswitch(MSI)(3) - - -
transition time(6) tion MSI
cycles
Continuous
- - 10
Normal mode(7)
Final frequency µs
mode Sampling
- - 200
mode(8)
MSI oscillator PLL mode,
tstab(MSI)(3) All MSI 1% of final
stabilization time MSIPLL - - 0.8 ms
ranges frequency
FAST = 0
PLL mode,
cycles
MSIPLL All MSI ranges 2
FAST = 1
MSI range 0 to 3 - 6.6 -
MSI range 4 to 7 - 1.6 -
MSI PLL-mode LDO
oscillator power MSI range 8 to 11 - 1.4 -
MSIPLL
consumption MSI range 12 to 15 - 0.8 -
IDD(MSI_OFF EN = 1 and
(3) when MSI is µA
_PLLFAST) MSIPLL MSI range 0 to 3 - 4.7 -
disabled with
FAST = 1
PLL accuracy MSI range 4 to 7 - 1.4 -
retention SMPS
MSI range 8 to 11 - 1.3 -
MSI range 12 to 15 - 0.8 -
21 + 2.5
MSI range 0 to 3 - -
µA/MHz
LDO
19 + 2.5
MSI range 4 to 15 - -
Continuous µA/MHz
mode(7) 21 + 1,3
MSI range 0 to 3 - -
µA/MHz
SMPS(9)
19 + 1,3
MSI range 4 to 15 - -
MSI oscillator µA/MHz
IDD(MSI)(3) power 3 + 2.5 µA
consumption Range 0 to 3 - -
µA/MHz
LDO 1+
Range 4 to 15 - 2.5µA/ -
Sampling MHz
mode(8)
3+1
Range 0 to 3 - -
µA/MHz
SMPS
1+1
Range 4 to 15 - -
µA/MHz
1. Evaluated by characterization and not tested in production, unless otherwise specified.
2. In PLL mode, the MSI accuracy is the LSE crystal accuracy.
3. Specified by design. Not tested in production.
4. This is a deviation for an individual part once the initial frequency has been measured.
5. The MSI startup time is the time when the four MSIRCs are in power down.
6. This delay is the time to switch from one MSIRC to another one. In case the destination MSIRC is in power down, the total
delay is tsu(MSI) + tswitch(MSI).
7. The MSI is in continuous mode when the internal regulator is in voltage range 1, 2 or 3.
8. The MSI is in sampling mode when MSIBIAS = 1 in RCC_ICSCR1, and the regulator is in voltage range 4, or when the
device is in Stop 1 or Stop 2 mode.
9. SMPS efficiency in range 1, based on VCORE current = 19.4 mA.
fHSI48 HSI48 frequency after factory calibration VDD = 3.0 V, TJ = 30 °C 47.5 48 48.5 MHz
MSv69123V1
Integer mode - 25 50
tLOCK(3)(4) PLL lock time μs
Fractional mode - 40 65
Whole bank 10
NEND Endurance TA = –40 to 125 °C kcycles
Limited to 256 Kbytes per bank 100
TA = 85 °C after 1 kcycle(2) 30
TA = 105 °C after 1 kcycle (2)
15
TA = 125 °C after 1 kcycle(2) 10
Whole bank
TA = 55 °C after 10 kcycle (2)
30
tRET Data retention TA = 85 °C after 10 kcycle(2) 15 Years
(2)
TA = 105 °C after 10 kcycle 10
TA = 55 °C after 100 kcycle(2) 30
Limited to 256 Kbytes per bank TA = 85 °C after 100 kcycle(2) 15
TA = 105 °C after 100 kcycle(2) 10
1. Evaluated by characterization. Not tested in production.
2. Cycling performed over the whole temperature range.
Voltage limits to be applied on any I/O pin to VDD = 3.3 V, TA = +25 °C, fHCLK = 160 MHz,
VFESD 3B
induce a functional disturbance TFBGA216 conforming to IEC 61000-4-2
Fast transient voltage burst limits to be
VDD = 3.3 V, TA = +25 °C, fHCLK = 160 MHz,
VEFTB applied through 100 pF on VDD and VSS pins 5A
TFBGA216 conforming to IEC 61000-4-4
to induce a functional disturbance
to prevent unrecoverable errors occurring. See application note Software techniques for
improving microcontrollers EMC performance (AN1015) for more details.
Table 83. EMI characteristics (for fHSE = 8 MHz, fHCLK = 160 MHz)
Monitored frequency
Symbol Parameter Conditions Value Unit
band
Static latch-up
The following complementary static tests are required on three parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78E IC latch-up standard.
The characterization results are given in the table below. The negative induced leakage
current is caused by the negative injection.The positive induced leakage current is caused
by the positive injection.
Unit
Unit
Parameter Conditions Min Typ Max
2. Refer to Figure 34: I/O input characteristics (all I/Os except BOOT0 and FT_c).
3. Specified by design. Not tested in production.
4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following
formula: ITotal_Ileak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg max.
5. Max (VDDXXX) is the maximum value of all the I/O supplies. The I/O supplies depend on the I/O structure options, as
described in Table 26: Legend/abbreviations used in the pinout table.
6. To sustain a voltage higher than Min (VDD, VDDA, VDDUSB, VDDIO2) +0.3 V, the internal pull-up and pull-down resistors must
be disabled.
7. Refer to Ibias in the OPAMP characteristics table for the values of the OPAMP dedicated input leakage current.
8. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS.
This PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in the figure below.
Figure 34. I/O input characteristics (all I/Os except BOOT0 and FT_c)
MSv69136V1
In the user application, the number of I/O pins tat can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2: Absolute maximum ratings:
• The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 31: Current characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS
(see Table 31: Current characteristics).
Table 88. Output voltage characteristics (all I/Os except FT_t I/Os in VBAT mode(1),
and FT_o I/Os)(2)(3)
Symbol Parameter Conditions Min Max Unit
Table 89. Output voltage characteristics for FT_t I/Os in VBAT mode, and for FT_o I/Os(1)
Symbol Parameter Conditions Min Max Unit
Output AC characteristics
The definition and values of output AC characteristics are given in Figure 35: Output AC
characteristics definition and in the table below respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 33.
Table 90. Output AC characteristics, HSLV OFF (all I/Os except FT_c,
FT_t in VBAT mode(1), and FT_o I/Os)(2)(3)(4)
Speed Symbol Parameter Conditions Min Max Unit
Output rise and fall time CL = 50 pF, 1.08 V ≤ VDDIOx < 1.58 V - 85
tr/tf ns
all I/Os CL = 10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 12.5
CL = 10 pF, 1.58 V ≤ VDDIOx < 2.7 V - 25
CL = 10 pF, 1.08 V ≤ VDDIOx < 1.58 V - 50
Table 90. Output AC characteristics, HSLV OFF (all I/Os except FT_c,
FT_t in VBAT mode(1), and FT_o I/Os)(2)(3)(4) (continued)
Speed Symbol Parameter Conditions Min Max Unit
Output rise and fall time CL = 30 pF, 1.08 V ≤ VDDIOx < 1.58 V - 18
tr/tf ns
all I/Os CL = 10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 4.2
CL = 10 pF, 1.58 V ≤ VDDIOx < 2.7 V - 7.5
CL = 10 pF, 1.08 V ≤ VDDIOx < 1.58 V - 12
CL = 30 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 100(5)
CL = 30 pF, 1.58 V ≤ VDDIOx < 2.7 V - 33(5)
Output rise and fall time CL = 30 pF, 1.08 V ≤ VDDIOx < 1.58 V - 13.3
tr/tf ns
all I/Os CL = 10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 2(5)
CL = 10 pF, 1.58 V ≤ VDDIOx < 2.7 V - 4.1(5)
CL = 10 pF, 1.08 V ≤ VDDIOx < 1.58 V - 9.2
CL = 30 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 100(5)
CL = 30 pF, 1.58 V ≤ VDDIOx < 2.7 V - 33(5)
Maximum frequency CL = 30 pF, 1.08 V ≤ VDDIOx < 1.58 V - 5
11 Fmax All I/Os except FT_c, FT_v, MHz
and TT_v CL = 10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 133(5)
CL = 10 pF, 1.58 V ≤ VDDIOx < 2.7 V - 40(5)
CL = 10 pF, 1.08 V ≤ VDDIOx < 1.58 V - 5
Table 90. Output AC characteristics, HSLV OFF (all I/Os except FT_c,
FT_t in VBAT mode(1), and FT_o I/Os)(2)(3)(4) (continued)
Speed Symbol Parameter Conditions Min Max Unit
Output rise and fall time CL = 30 pF, 1.08 V ≤ VDDIOx < 1.58 V - 11
tr/tf
FT_v and TT_v I/Os CL = 10 pF, 2.7 V ≤ VDDIOx ≤ 3.6 V - 1.66(5)
CL = 10 pF, 1.58 V ≤ VDDIOx < 2.7 V - 3.1(5)
CL = 10 pF, 1.08 V ≤ VDDIOx < 1.58 V - 7
Fmax Maximum frequency CL = 550 pF, 1.08 V ≤ VDDIOx < 3.6 V - 1 MHz
CL = 100 pF, 1.58 V ≤ VDDIOx < 3.6 V - 50
Fm+ CL = 100 pF, 1.08 V ≤ VDDIOx < 1.58 V - 80
tf Output fall time(6) ns
CL = 550 pF, 1.58 V ≤ VDDIOx < 3.6 V - 100
CL = 550 pF, 1.08 V ≤ VDDIOx < 1.58 V - 220
1. FT_t I/O characteristics are degraded only in VBAT mode (refer to Table 93).
2. The I/O structure options listed in this table can be a concatenation of options including the option explicitly listed. For
instance TT_a refers to any TT I/O with _a option. TT_xx refers to any TT I/O and FT_xx refers to any FT I/O.
3. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the product reference manual for a description of GPIO
port configuration register.
4. Specified by design. Not tested in production.
5. Compensation system enabled.
6. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.
Output rise and fall time CL = 30 pF, 1.08 V ≤ VDDIOx < 1.58 V - 6.6
FT_v and TT_v I/Os CL = 10 pF, 1.58 V ≤ VDDIOx < 2.7 V 1.6(5)
CL = 10 pF, 1.08 V ≤ VDDIOx < 1.58 V - 3.4
1. FT_t I/O characteristics are degraded only in VBAT mode (refer to Table 93).
2. The I/O structure options listed in this table can be a concatenation of options including the option explicitly listed. For
instance TT_a refers to any TT I/O with _a option. TT_xx refers to any TT I/O and FT_xx refers to any FT I/O.
3. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the product reference manual for a description of
GPIO port configuration register.
4. Specified by design. Not tested in production.
5. Compensation system enabled.
Table 93. Output AC characteristics for FT_t I/Os in VBAT mode, and for FT_o I/Os(1)
Symbol Parameter Conditions Min Max Unit
90% 10%
50% 50%
10% 90%
t r(IO)out t f(IO)out
Maximum frequency is achieved with a duty cycle at (45 - 55%) when loaded by the
specified capacitance.
MS32132V4
External
reset circuit(1) VDD
RPU
NRST(2) Internal reset
Filter
0.1 μF(3)
MS19878V3
tSTAB ADC power-up time LDO already started (3 × 1/fADC) + 1 conversion Cycle
Offset and linearity
tCAL - - 31849 -
calibration time
tOFF_CAL Offset calibration time - - 885 -
Trigger conversion PRESC = 0 3
latency for regular and
PRESC = 1 7
tLATR injected channels,
without aborting the
PRESC = 2 13
conversion
1/fADC
Trigger conversion PRESC = 0 4
latency Injected
tLATRINJ PRESC = 1 9
channels aborting a
regular conversion PRESC = 2 17
ts Sampling time - 5 - 814
Total conversion time
tCONV (including sampling Resolution = N bits ts + N + 3
time)
fs = 2.5 Msps,
- 970 -
resolution = 14 bits
fs = 1 Msps,
- 550 -
resolution = 14 bits
fs = 10 ksps,
- 130 -
ADC consumption on resolution = 14 bits
IDDA_D(ADC)
VDDA Differential mode fs = 2.5 Msps,
- 940 -
resolution = 12 bits
fs = 2.5 Msps,
- 840 -
resolution = 10 bits
fs = 2.5 Msps,
- 730 -
resolution = 8bits
fs = 2.5 Msps,
- 140 -
resolution = 14 bits
fs = 1 Msps,
- 80 -
resolution = 14 bits
fs = 10 ksps,
- 13 -
ADC consumption on resolution = 14 bits
IDDV_D(ADC) µA
VREF+ Differential mode f = 2.5 Msps,
s - 140 -
resolution = 12 bits
fs = 2.5 Msps,
- 140 -
resolution = 10 bits
fs = 2.5 Msps,
- 120 -
resolution = 8bits
fs = 2.5 Msps,
- 980 -
resolution = 14 bits
fs = 1 Msps,
- 550 -
resolution = 14 bits
fs = 10 ksps,
ADC consumption on - 130 -
resolution = 14 bits
IDDA_s(ADC) VDDA Singe-ended
mode fs = 2.5 Msps,
- 900 -
resolution = 12 bits
fs = 2.5 Msps,
- 840 -
resolution = 10 bits
fs = 2.5 Msps,
- 770 -
resolution = 8bits
fs = 2.5 Msps,
- 160 -
resolution = 14 bits
fs = 1 Msps,
- 90 -
resolution = 14 bits
fs = 10 ksps,
ADC consumption on - 15 -
resolution = 14 bits
IDDV_s(ADC) VREF+ Single-ended µA
mode fs = 2.5 Msps,
- 150 -
resolution = 12 bits
fs = 2.5 Msps,
- 150 -
resolution = 10 bits
fs = 2.5 Msps,
- 150 -
resolution = 8bits
1. Specified by design. Not tested in production.
2. The voltage booster on the ADC switches must be used when VDDA < 2.4 V (embedded I/O switches).
3. Degraded differential linearity error below 10 MHz.
4. Depending on the package, VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA.
5. The tolerance is 4 LSBs for 14-bit resolution, and 2 LSBs for 12-bit, 10-bit and 8-bit resolutions.
47 142
14 bits
(2 LSB 68 145
tolerance)
100 170
47 135
68 135
100 140
12 bits 150 145
220 150
330 155
470 180 12
47 128 5
68 130
100 132
150 134
220 140
10 bits 330 146
470 160
680 176
1000 200
1500 240
20
2200 320
47 123
68 124
100 125
150 128
220 130
12
330 137
470 140
8 bits 680 157 5
1000 178
1500 204
2200 250
20
3300 313
4700 400
36
6800 546
10000 830 68
1. Specified by design. Not tested in production.
2. BOOSTEN and ANASWVDD configured properly according to VDD and VDDA values.
3. Values without external capacitor.
VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+
(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+
VSSA
MSv19880V6
VDDA(4) VREF+(4)
MSv67871V3
1. Refer to the ADCx characteristic table for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance
(refer to Table 87: I/O static characteristics for the value of the pad capacitance). A high Cparasitic value downgrades the
conversion accuracy. To remedy this, fADC must be reduced.
3. Refer to Table 87: I/O static characteristics for the values of Ilkg.
4. Refer to Section 5.1.6: Power supply scheme.
tSTAB ADC power-up time LDO already started (3 × 1/fADC) + 1 conversion Cycle
tOFF_CAL Offset calibration time - - 123 -
WAIT = 0, AUTOFF = 0,
4
DPD = 0, fADC = HCLK
WAIT = 0, AUTOFF = 0,
tLATR Trigger conversion latency 4
DPD = 0, fADC = HCLK/2
WAIT = 0, AUTOFF = 0,
3.75
DPD = 0, fADC = HCLK/4
ts Sampling time - 1.5 - 814.5
1/fADC
Resolution = N bits,
ts + N + 0.5
VREFPROTEN = 0
Resolution = N bits,
Total conversion time (including VREFPROTEN = 1 ts + N + 0.5 - ts + N + 1.5
tCONV
sampling time) VREFSECSMP = 0
Resolution = N bits,
VREFPROTEN = 1 ts + N + 0.5 - ts + N + 2.5
VREFSECSMP = 1
47 276
68 288
12.5 19.5
100 306
150 336
220 377
330 442 19.5
39.5
470 526
680 650
1000 840 39.5
12 bits 79.5
1500 1134
2200 1643 79.5
3300 2395
4700 3342
6800 4754 814.5
10000 6840 814.5
15000 9967
22000 14068
33000 19933 N/A
47 86
68 90 3.5
100 95
7.5
150 108
220 116
330 136 7.5
470 161
10 bits 12.5
680 212
1000 276 12.5 19.5
1500 376 39.5
19.5
2200 516
3300 735 79.5
39.5
4700 1012
6800 1423 79.5 814.5
10000 2040
15000 2978
10 bits
22000 4356 814.5 814.5
(cont’d)
33000 6443
47000 8925
47 45
68 46
100 48 3.5
150 53 3.5
220 59
330 69
470 81
7.5
680 101
1000 130 7.5
8 bits 1500 177 12.5
2200 242
12.5 19.5
3300 345
4700 475 19.5
39.5
6800 670
39.5
10000 963
79.5
15000 1417
79.5
22000 2040
33000 2995 814.5
814.5
47000 4158
47 32
68 32
100 33
1.5
150 35
3.5
220 37
6 bits
330 41
470 49
680 61 3.5
1000 79
7.5
1500 106 7.5
2200 146
7.5 12.5
3300 207
4700 286 12.5 19.5
See Figure 37: ADC accuracy characteristics, Figure 38: Typical connection diagram when
using the ADC with FT/TT pins featuring analog switch function, and General PCB design
guidelines.
VBRS = 0 - 5 -
RBC Battery charging resistor kΩ
VBRS = 1 - 1.5 -
Wake-up time from off state Normal mode DAC output buffer
- 4.2 7.5
tWAKEUP (setting the ENx bit in the ON, CL ≤ 50 pF, RL = 5 kΩ
(2) DAC control register) until Normal mode DAC output
the final value ±1 LSB - 2 5
buffer OFF, CL ≤ 10 pF
DC VDDA supply rejection Normal mode DAC output buffer
PSRR 35 -80 -28 dB
ratio ON, CL ≤ 50 pF, RL = 5 kΩ
(3)
Ileak Output leakage current - - - nA
No load, middle
- 170 240
DAC output code (0x800)
µA
buffer ON No load, worst
- 300 400
code (0x0E4)
No load,
DAC output
middle/worst code - 145 180
buffer OFF
(0x800)
DAC consumption
IDDV(DAC)
from VREF+ 170 × TON 400 × TON
Sample and hold mode, buffer /(TON + /(TON +
-
ON, CSH = 100 nF (worst code) TOFF) TOFF)
(4) (4)
2. In buffered mode, the output can overshoot above the final value for low input code (starting from the minimum value).
3. Refer to Table 87: I/O static characteristics.
4. TON is the refresh phase duration. TOFF is the hold phase duration (see the product reference manual for more details).
Buffer(1)
RLOAD
12-bit DAC_OUTx
digital-to-analog
converter
CLOAD
(1) The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads
directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in
the DAC_CR register. MSv47959V2
Signal-to-noise and DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz - 70.1 -
SINAD
distortion ratio(6) DAC output buffer OFF, CL ≤ 50 pF, no RL, 1 kHz - 71.5 -
Effective number DAC output buffer ON, CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz - 11.3 -
ENOB bits
of bits DAC output buffer OFF, CL ≤ 50 pF, no RL, 1 kHz - 11.6 -
1. Specified by design. Not tested in production.
2. Difference between two consecutive codes minus 1 LSB.
3. Difference between the value measured at code i and the value measured at code i on a line drawn between code 0 and
last code 4095.
4. Difference between the value measured at code (0x001) and the ideal value.
5. Difference between the ideal transfer-function slope and the measured slope computed from code 0x000 and 0xFFF when
the buffer is OFF, and from code giving 0.2 V and (VREF+ - 0.2 V) when the buffer is ON.
6. Signal is -0.5 dBFS with Fsampling = 1 MHz.
Power supply DC - 65 -
PSRR dB
rejection 100 kHz - 30 -
CL = 0.5 µF - 110 200
tSTART Startup time CL = 1.1 µF - 240 350 µs
CL = 1.5 µF - 320 500
Control of DC
current drive on
IINRUSH VREFBUF_ - - 8 11 mA
OUT during startup
phase (6)
Iload = 0 µA - 14 18
VREFBUF
IDDA
consumption from Iload = 500 µA - 16 20 µA
(VREFBUF) V
DDA
Iload = 4 mA - 42 50
1. Specified by design and not tested in production, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not accurately maintain the output voltage (VDDA - drop voltage).
3. Evaluated by characterization. Not tested in production.
4. The capacitive load must include a 100 nF capacitor in order to cut off the high-frequency noise.
5. The load regulation value only takes into account the die and package resistance. The parasitic resistance on PCB
degrades this value.
6. To correctly control the VREFBUF inrush current during startup phase and scaling change, the VDDA voltage must be in the
range of [1.8 V-3.6 V], [2.1 V-3.6 V], [2.4 V-3.6 V] and [2.8 V-3.6 V] for VRS = 000, 001, 010 and 011 respectively.
MSv69705V1
MSv69706V1
MSv69707V1
MSv69708V1
CLOAD ≤ 50 pF,
Normal
RLOAD ≥ 3.9 kΩ, - 4 10
mode
Wake-up time from follower config.
tWAKEUP µs
OFF state C ≤ 50 pF,
Low-power LOAD
RLOAD ≥ 20kΩ, - 20 40
mode
follower config.
General purpose input (all (4)
- -
packages except UFBGA)
Dedicated TJ ≤ 75 °C - - 7
Ibias OPAMP input bias current input nA
TJ ≤ 85 °C - - 9
(UFBGA
and TJ ≤ 105 °C - - 18
TFBGA) TJ ≤ 125 °C - - 25
PGA_GAIN[1:0] = 00 - 2 -
PGA_GAIN[1:0] = 01 - 4 -
PGA gain(3) Non-inverting gain value -
PGA_GAIN[1:0] = 10 - 8 -
PGA_GAIN[1:0] = 11 - 16 -
PGA gain = 2 - 80/80 -
R2/R1 internal resistance PGA gain = 4 - 120/40 - kΩ/
Rnetwork values in non-inverting
PGA gain = 8 - 140/20 - kΩ
PGA mode(5)
PGA gain = 16 - 150/10 -
Resistance variation
Delta R - -18 - 18
(R1 or R2) %
PGA gain error PGA gain error - -1 - 1
PGA gain = 2 - GBW/2 -
Normal
no load, quiescent - 130 190
mode
mode,
Low-power standard speed
- 40 58
OPAMP consumption from mode
IDDA(OPAMP) µA
VDDA Normal
no load, quiescent - 138 205
mode
mode,
Low-power high-speed mode
- 42 60
mode
1. Specified by design and not tested in production, unless otherwise specified.
2. OPA_RANGE must be set to 1 in OPAMP1_CSR.
3. Evaluated by characterization. Not tested in production.
4. Mostly I/O leakage when used in analog mode. Refer to Ilkg parameter in Table 87: I/O static characteristics.
5. R2 is the internal resistance between the OPAMP output and the OPAMP inverting input. R1 is the internal resistance
between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1.
Figure 44. OPAMP voltage noise density, normal mode, RLOAD = 3.9 kΩ
ADF_CCK (I/O)
ADF_SDIx (I)
MSv69124V1
MDF_CKIx (I)
MDF_CCK (I/O)
MDF_SDIx (I)
MSv69125V1
1/DCMI_PIXCLK
DCMI_PIXCLK
tsu(HSYNC) th(HSYNC)
DCMI_HSYNC
tsu(VSYNC) th(HSYNC)
DCMI_VSYNC
tsu(DATA) th(DATA)
DATA[0:13]
MS32414V2
CKPOL=0
(input)
CKPOL=1
tv(DATA) tho(DATA)
PSSI D[15:0]
Invalid data OUT Valid data OUT Invalid data OUT
(output)
tv(DE) tho(DE)
DEPOL=0
PSSI_DE
(output)
DEPOL=1
ts(RDY) th(RDY)
PSSI_RDY
RDYPOL=0
(input)
RDYPOL=1
MSv63437V1
tc(PDCK)
CKPOL=0
(input)
CKPOL=1
ts(DATA)
th(DATA)
PSSI D[15:0]
Invalid data IN Valid data IN Invalid data IN
(input)
ts(DE)
th(DE)
DEPOL=0
PSSI_DE
(input)
DEPOL=1
tv(RDY) tho(RDY)
PSSI_RDY
RDYPOL=0
(output)
RDYPOL=1
MSv63436V1
tCLK
LCD_CLK
LCD_VSYNC
tv(HSYNC) th(HSYNC)
LCD_HSYNC
tv(DE) th(DE)
LCD_DE
tv(DATA)
LCD_R[0:7]
LCD_G[0:7] Pixel Pixel Pixel
1 2 N
LCD_B[0:7]
th(DATA)
One line
MS32749V2
tCLK
LCD_CLK
tv(VSYNC) th(VSYNC)
LCD_VSYNC
LCD_R[0:7]
LCD_G[0:7] M lines data
LCD_B[0:7]
One frame
MS32750V2
TCLK-POST TEOT
Clock VIL
Lane
Data VIL
Lane
MS38282V1
Clock
Lane
TLPX THS-PREPARE THS-ZERO
Data
VIL
Lane
TREOT
LP-11 LP-01 LP-00 TEOT
THS-TRAIL THS-EXIT
MS38283V1
Ultra-low-power mode
- 194 208 µA
(PLL OFF)
DSI system (Host, PLL and D-PHY) Stop state - 1 data lane
IDD_DSI - 2.74 3.2
current consumption on VDDDSI (PLL OFF)
Stop state - 2 data lanes
- 4.08 4.8
(PLL OFF)
10 MHz escape clock -
- 4.32 4.8
1 data lane (PLL OFF)
10 MHz escape clock -
- 5.65 6.4
DSI system current consumption on 2 data lanes (PLL OFF)
IDD_DSILP
VDDDSI in LP mode communication(2) 20 MHz escape clock -
- 5.94 6.6
1 data lane (PLL OFF)
20 MHz escape clock -
- 7.27 8.2
2 data lanes (PLL OFF) mA
300 Mbit/s - 1 data lane
- 2.98 3.1
(PLL ON)
300 Mbit/s - 2 data lanes
DSI system (Host, PLL and D-PHY) - 4.33 4.5
(PLL ON)
current consumption on VDDDSI
in HS mode communication(3) 500 Mbit/s - 1 data lane
- 3.21 3.4
IDD_DSIHS (PLL ON)
500 Mbit/s - 2 data lanes
- 4.54 4.8
(PLL ON)
DSI system (Host, PLL and D-PHY)
500 Mbit/s - 2 data lanes
current consumption on VDDDSI - 4.56 4.8
(PLL ON)
in HS mode with CLK like payload
1. Evaluated by characterization. Not tested in production.
2. Values based on an average traffic in LP command mode.
3. Values based on an average traffic (3/4 HS traffic and 1/4 LP) in Video mode.
Ultra-low--power mode
- 7.7 48 µA
(PLL OFF)
DSI system (Host, PLL and D-PHY) Stop state - 1 data lane
IDD11_DSI - 0.56 1.1
current consumption on VDD11DSI (PLL OFF)
mA
Stop state - 2 data lanes
- 0.83 1.7
(PLL OFF)
- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 160 MHz 6.25 - ns
/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock, so that there is always a full
RC period of uncertainty.
1 0 0.025 1.638
2 1 0.051 3.276
4 2 0.102 6.553
8 3 0.204 13.107
ms
16 4 0.409 26.214
32 5 0.819 52.428
46 6 1.177 75.366
128 7 3.276 209.715
Refer to Section 5.3.15: I/O port characteristics for more details on the input/output
characteristics.
tw(NE)
FMC_NE
FMC_NOE
FMC_NWE
tv(A_NE) t h(A_NOE)
FMC_A[25:0] Address
tv(BL_NE) t h(BL_NOE)
FMC_NBL[1:0]
t h(Data_NE)
t su(Data_NOE) th(Data_NOE)
t su(Data_NE)
FMC_D[15:0] Data
t v(NADV_NE)
tw(NADV)
FMC_NADV (1)
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32753V1
FMC_NEx
FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)
FMC_NWE
tv(A_NE) th(A_NWE)
FMC_A[25:0] Address
tv(BL_NE) th(BL_NWE)
FMC_NBL[1:0] NBL
tv(Data_NE) th(Data_NWE)
FMC_D[15:0] Data
t v(NADV_NE)
tw(NADV)
FMC_NADV (1)
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32754V1
FMC_ NE
tv(NOE_NE) t h(NE_NOE)
FMC_NOE
t w(NOE)
FMC_NWE
tv(A_NE) th(A_NOE)
t v(NADV_NE) th(AD_NADV)
tw(NADV)
FMC_NADV
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32755V1
FMC_ NEx
FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)
FMC_NWE
tv(A_NE) th(A_NWE)
t v(NADV_NE) th(AD_NADV)
tw(NADV)
FMC_NADV
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32756V1
FMC_CLK
Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)
FMC_NEx
t d(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV
td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:16]
td(CLKL-NOEL) td(CLKH-NOEH)
FMC_NOE
td(CLKL-ADIV) th(CLKH-ADV)
t d(CLKL-ADV) tsu(ADV-CLKH) tsu(ADV-CLKH) th(CLKH-ADV)
FMC_AD[15:0] AD[15:0] D1 D2
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)
MS32757V1
)0&B&/.
'DWDODWHQF\
WG &/./1([/ WG &/.+1([+
)0&B1([
WG &/./1$'9/ WG &/./1$'9+
)0&B1$'9
WG &/./$9 WG &/.+$,9
)0&B$>@
WG &/./1:(/ WG &/.+1:(+
)0&B1:(
WG &/./$',9 WG &/./'DWD
WG &/./$'9 WG &/./'DWD
)0&B1:$,7
:$,7&)* E
:$,732/E WVX 1:$,79&/.+ WK &/.+1:$,79
WG &/.+1%/+
)0&B1%/
06Y9
FMC_CLK
td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV
td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:0]
td(CLKL-NOEL) td(CLKH-NOEH)
FMC_NOE
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)
FMC_D[15:0] D1 D2
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
MS32759V1
(1)
Table 136. Synchronous non-multiplexed NOR/PSRAM read timings
Symbol Parameter Min Max Unit
)0&B&/.
WG &/./1([/ WG &/.+1([+
'DWDODWHQF\
)0&B1([
WG &/./1$'9/ WG &/./1$'9+
)0&B1$'9
WG &/./$9 WG &/.+$,9
)0&B$>@
WG &/./1:(/ WG &/.+1:(+
)0&B1:(
WG &/./'DWD WG &/./'DWD
)0&B1:$,7
:$,7&)* E:$,732/E WVX 1:$,79&/.+ WG &/.+1%/+
WK &/.+1:$,79
)0&B1%/
06Y9
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
FMC_NWE
td(NCE-NOE) th(NOE-ALE)
FMC_NOE (NRE)
tsu(D-NOE) th(NOE-D)
FMC_D[15:0]
MSv38003V1
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
td(NCE-NWE) th(NWE-ALE)
FMC_NWE
FMC_NOE (NRE)
tv(NWE-D) th(NWE-D)
FMC_D[15:0]
MSv38004V1
Figure 65. NAND controller waveforms for common memory read access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
td(NCE-NOE) th(NOE-ALE)
FMC_NWE
tw(NOE)
FMC_NOE
tsu(D-NOE) th(NOE-D)
FMC_D[15:0]
MSv38005V1
Figure 66. NAND controller waveforms for common memory write access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
td(NCE-NWE) tw(NWE) th(NOE-ALE)
FMC_NWE
FMC_NOE
td(D-NWE)
tv(NWE-D) th(NWE-D)
FMC_D[15:0]
MSv38006V1
Clock
tv(OUT) th(OUT)
Data output D0 D1 D2
ts(IN) th(IN)
Data input D0 D1 D2
MSv36878V3
Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)
Data output D0 D1 D2 D3 D4 D5
Data input D0 D1 D2 D3 D4 D5
MSv36879V4
NCLK
VOD(CLK)
CLK
MSv47732V3
NCS
CLK, NCLK
RWDS
Command address
Memory drives DQ[7:0] and RWDS.
Host drives DQ[7:0] and the memory drives RWDS. MSv47733V3
CLK, NCLK
tCKDS
RWDS High = 2x latency count
Low = 1x latency count
RWDS and data
are edge aligned
DQ[7:0] 47:40 39:32 31:24 23:16 15:8 7:0 Dn Dn Dn+1 Dn+1
A B A B
NCS
CLK, NCLK
Latency count
tv(OUT) th(OUT) tv(OUT) th(OUT)
Dn Dn Dn+1 Dn+1
DQ[7:0] 47:40 39:32 31:24 23:16 15:8 7:0
A B A B
Voltage range 1 0 - -
th(IN) Data input hold time
Voltage range 4 0.5 - -
Voltage range 1 - 0.5 1
tv(OUT) Data output valid time
Voltage range 4 - 1.5 2.5
Voltage range 1 0 - -
th(OUT) Data output hold time
Voltage range 4 1 - -
1. Evaluated by characterization. Not tested in production.
Clock
tv(OUT) th(OUT)
Data output D0 D1 D2
ts(IN) th(IN)
Data input D0 D1 D2
MSv36878V3
Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)
Data output D0 D1 D2 D3 D4 D5
Data input D0 D1 D2 D3 D4 D5
MSv36879V4
CLK
VOD(CLK)
NCLK
MSv69140V2
NCS
CLK, NCLK
DQS0
tv(DQ)
Dn Dn Dn+1 Dn+1
IO[15:8] A B A B
MSv69141V2
CLK, NCLK
Latency count
tv(OUT) th(OUT) tv(OUT) th(OUT)
Dn Dn Dn+1 Dn+1
IO[7:0] 47:40 39:32 31:24 23:16 15:8 7:0
A B A B
Command address
tv(OUT) th(OUT)
Dn Dn Dn+1 Dn+1
IO[15:8] A B A B
MSv69142V2
7.5/8.5
tOV Output valid time HS - - 6.5 (6)
ns
tOH Output hold time HS - 3 - -
All modes
- - 84
fPP Clock frequency in data transfer mode except DDR MHz
(3)
DDR mode - - 40
tW(CKL) Clock low time fPP = 52 MHz 8.5 9.5 -
ns
tW(CKH) Clock high time fPP = 52 MHz 8.5 9.5 -
CK
tOH
tOV
D, CMD output
tIH
tISU
D, CMD input
MSv69709V1
CK
tOV tOH
tW(CKH)
CK
tW(CKL)
tOV tOV
tOH tOH
MSv69158V1
tAF Maximum pulse width of spikes that are suppressed by the analog filter 50(2) 115(3) ns
1. Specified by design. Not tested in production.
2. Spikes with widths below tAF min are filtered.
3. Spikes with width above tAF max are not filtered.
1/fCK
tw(CKH)
CPHA=0
CK output
CPOL=0
CPHA=0
CPOL=1
tw(CKL)
CPHA=1
CPOL=0
CK output
CPHA=1
CPOL=1
tsu(RX) tw(CKH)
tw(CKL)
RX input MSB IN BIT6 IN LSB IN
NSS input
1/fCK th(NSS)
tsu(NSS) tw(CKH)
CPHA=0
CPOL=0
CK input
CPHA=0
CPOL=1
tw(CKL) tv(TX) th(TX)
TX output First bit OUT Next bits OUT Last bit OUT
tsu(RX) th(RX)
MSv65387V5
NSS input
tc(SCK) th(NSS)
tsu(NSS) tw(SCKH)
CPHA=0
SCK input
CPOL=0
CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)
MISO output First bit OUT Next bits OUT Last bit OUT
tsu(SI) th(SI)
MSv41658V2
NSS input
tc(SCK) th(NSS)
tsu(NSS) tw(SCKH)
CPHA=1
SCK input
CPOL=0
CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tdis(SO)
MISO output First bit OUT Next bits OUT Last bit OUT
tsu(SI) th(SI)
MSv41659V2
NSS input
tc(SCK)
tw(SCKH)
CPHA=0
SCK output
CPOL=0
CPHA=0
CPOL=1
tw(SCKL)
CPHA=1
CPOL=0
SCK output
CPHA=1
CPOL=1
tsu(MI) th(MI)
MOSI output First bit OUT Next bits OUT Last bit OUT
Data output Slave transmitter (after enable edge), 2.7 V ≤ VDDIOX ≤ 3.6 V - 18
tv(SD_B_ST)
valid time Slave transmitter (after enable edge), 1.71 V ≤ VDDIOX ≤ 3.6 V - 27.5
Data output
th(SD_B_ST) Slave transmitter (after enable edge) 8 -
hold time
Data output Master transmitter (after enable edge), 2.7 V ≤ VDDIOX ≤ 3.6 V - 19
tv(SD_A_MT)
valid time Master transmitter (after enable edge), 1.71 V ≤ VDDIOX ≤ 3.6 V - 27.5
Data output
th(SD_A_MT) Master transmitter (after enable edge) 8 -
hold time
1. Evaluated by characterization. Not tested in production.
2. APB clock frequency that must be at least twice SAI clock frequency.
SAI_SCK_X
(CKSTR = 0)
SAI_SCK_X
(CKSTR = 1)
th(FS)
SAI_FS_X
(output)
tv(FS) tv(SD_MT) th(SD_MT)
SAI_SD_X
(transmit) Slot n Slot n+2
tsu(SD_MR) th(SD_MR)
SAI_SD_X
(receive) Slot n
MS32771V2
SAI_SCK_X
(CKSTR = 0)
SAI_SCK_X
(CKSTR = 1)
SAI_FS_X
(input)
tsu(FS) tv(SD_ST) th(SD_ST)
SAI_SD_X
Slot n
(receive)
MS32772V2
The parameters given in tables below are derived from tests performed under temperature
and VDD supply voltage conditions summarized in Table 33: General operating conditions.
TCK
tsu(TMS/TDI) th(TMS/TDI)
tw(TCKL) tw(TCKH)
TDI/TMS
tov(TDO) toh(TDO)
TDO
MSv40458V1
SWCLK
tov(SWDIO) toh(SWDIO)
SWDIO
(transmit)
MSv40459V1
6 Package information
2 1
(2)
R1
H
R2
B
B-
N
O
TI
C
SE
B GAUGE PLANE
D 1/4
0.25
(6)
S
B
L
4x N/4 TIPS
E 1/4 3
(L1)
aaa C A-B D (1) (11)
bbb H A-B D 4x
SECTION A-A
(13) (N – 4)x e
C
A
0.05
A2 A1 (12)
b
ddd C A-B D ccc C
D (4)
(10)
D (3) b WITH PLATING
N (4)
A A SECTION B-B
(Section A-A)
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
48 33
0.30
49 0.5 32
12.70
10.30
10.30
64 17
1.20
1 16
7.80
12.70
5W_LQFP64_FP_V2
STM32U5A5
Product identification(1)
RJT6
Y WW Date code
Pin 1 identifier
R Revision code
MSv71168V1
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
ș2 ș
(2)
R1
H
R2
B
B-
N
O
(6)
TI
C
SE
D1/4 B GAUGE PLANE
S
E1/4
B ș
4x N/4 TIPS
ș L
4x (L1)
aaa C A-B D
bbb H A-B D (1) (11)
(N-4) x e (13)
C
A (9) (11)
0.05
ccc C b WITH PLATING
A2 A1 b aaa C A-BD
(12)
SIDE VIEW
D (4)
(11) c
(2) (5) D1 c1 (11)
D (3)
(10) (4)
N
b1 BASE METAL
1 (11)
2
3 E1/4 SECTION B-B
E1 E
SECTION A-A
A A
θ1 0° - - 0° - -
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
76 50
0.5
0.3
16.7 14.3
100 26
1.2
1 25
12.3
16.7
1L_LQFP100_FP_V1
STM32U5A5
Product identification(1)
VJT6Q
Date code
Y WW R
Pin 1 identifier
MSv71170V2
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
E1 B A
e E
Z
D1 D
12 1
BOTTOM VIEW Øb (132 balls) TOP VIEW
Øeee M C A B
Ø fff M C
A4
ddd C
A2 A3
b A1 A
SEATING
PLANE
UFBGA132_A0G8_ME_V2
A - - 0.600 - - 0.0236
A1 - - 0.110 - - 0.0043
A2 - 0.450 - - 0.0177 -
A3 - 0.130 - - 0.0051 -
A4 - 0.320 - - 0.0126 -
b 0.240 0.290 0.340 0.0094 0.0114 0.0134
D 6.850 7.000 7.150 0.2697 0.2756 0.2815
D1 - 5.500 - - 0.2165 -
E 6.850 7.000 7.150 0.2697 0.2756 0.2815
E1 - 5.500 - - 0.2165 -
e - 0.500 - - 0.0197 -
Z - 0.750 - - 0.0295 -
ddd - 0.080 - - 0.0031 -
eee - 0.150 - - 0.0059 -
fff - 0.050 - - 0.0020 -
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Dpad
Dsm
BGA_WLCSP_FT_V1
Table 163. UFBGA132 - Example of PCB design rules (0.5 mm pitch BGA)
Dimension Values
Pitch 0.5 mm
Dpad 0.280 mm
0.370 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm
Ball diameter 0.280 mm
STM32U
Product identification(1)
5A5QJI6
Date code
Y WW R Revision code
Pin 1 identifier
MSv71173V1
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
BOTTOM VIEW
2 1
(2)
R1
H
R2
B
B-
N
O
TI
C
SE
(6) B GAUGE PLANE
0.25
D 1/4
S
B
L
3
E 1/4 (L1)
(1) (11)
4x N/4 TIPS
aaa C A-B D SECTION A-A
bbb H A-B D 4x
(N-4)x e
C
A
0.05 (12) ddd C A-B D
A2 A1 b ccc C
D (4)
D1 (2) (5)
(10) (3) D (9) (11)
N (4)
b WITH PLATING
1
2
3 E 1/4
(11) (11)
c c1
(6)
D 1/4 (2)
(3) A B (3) (5)
E1 E b1 BASE METAL
(11)
SECTION B-B
A A
(Section A-A)
TOP VIEW
1A_LQFP144_ME_V2
A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 22.00 BSC 0.8661 BSC
(2)(5)
D1 20.00 BSC 0.7874 BSC
E(4) 22.00 BSC 0.8661 BSC
E1(2)(5) 20.00 BSC 0.7874 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 144
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
108 73
1.35
109 0.35 72
0.50
19.90 17.85
22.60
144 37
1 36
19.90
22.60
1A_LQFP144_FP
R Revision code
Y WW Date code
Pin 1 identifier
MSv70422V2
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
G
A3 A1
B4 B2
DETAIL A
e
e2 E
D A2
BOTTOM VIEW A
SIDE VIEW
A3
A2
A1
eee Z
b Z
(150)
ccc Z XY
ddd Z
E
DETAIL A
ROTATED
90
A1 ORIENTATION
REFERENCE
aaa
D
Y
A - - 0.58 - - 0.0228
(2)
A1 - 0.17 - - 0.0067 -
A2(2) - 0.38 - - 0.0150 -
A3(3) - 0.025 - - 0.0010 -
(4)
b 0.23 0.26 0.28 0.0090 0.0102 0.0110
D 5.36 5.38 5.40 0.2110 0.2118 0.2126
E 5.45 5.47 5.49 0.2146 0.2153 0.2161
e - 0.40 - - 0.0157 -
e1 - 4.16 - - 0.1638 -
e2 - 4.40 - - 0.1732 -
F(5) - 0.612 - - 0.0241 -
G(5) - 0.535 - - 0.0212 -
N 150
aaa - 0.10 - - 0.0043 -
bbb - 0.10 - - 0.0043 -
(6)
ccc - 0.10 - - 0.0043 -
(7)
ddd - 0.05 - - 0.0020 -
eee - 0.05 - - 0.0020 -
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. The maximum total package height is calculated by the RSS method (root sum square) using nominal and
tolerances values of A1 and A2.
3. Back side coating. Nominal dimension is rounded to the third decimal place resulting from process
capability.
4. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
5. Calculated dimensions are rounded to the third decimal place.
6. Bump position designation per JESD 95-1, SPP-010. The tolerance of position that controls the location of
the pattern of balls with respect to datums X and Y. For each ball, there is a cylindrical tolerance zone ccc
perpendicular to datum Z and located on true position with respect to datums X and Y as defined by e. The
axis perpendicular to datum Z of each ball must lie within this tolerance zone.
7. The tolerance of position that controls the location of the balls within the matrix with respect to each other.
For each ball, there is a cylindrical tolerance zone ddd perpendicular to datum Z and located on true
position as defined by e. The axis perpendicular to datum Z of each ball must lie within this tolerance zone.
Each tolerance zone ddd in the array is contained entirely in the respective zone ccc above. The axis of
each ball must lie simultaneously in both tolerance zones.
Dpad
Dsm
BGA_WLCSP_FT_V1
Pitch 0.4 mm
Dpad 0,250 mm
Dsm 0.325 mm typ. (depends on soldermask registration tolerance)
Stencil opening 0.325 mm
Stencil thickness 0.080 to 0.100 mm
Ball A1 identifier
MSv71554V1
C Seating plane
A4
ddd C
A
A2 A1
b
SIDE VIEW
B
E1
A
e Z
A
B
C Z
D
E
F
G D1 D
H
J
K
L e
M
N
13 12 11 10 9 8 7 6 5 4 3 2 1
Øb (169 balls)
Ø eee M C A B
BOTTOM VIEW Ø fff M C
B0MA_TFBGA169_ME_V1
Dpad
Dsm
BGA_WLCSP_FT_V1
Table 168. TFBGA169 - Example of PCB design rules (0.5 mm pitch BGA)
Dimension Values
Pitch 0.5 mm
Dpad 0.30 mm
Dsm 0.376 mm (pad + 2 x 0.038)
Board metal pad diameter 0.25 mm to 0.30 mm
Trace width top view 0.14 mm aperture diameter.
Product
identification (1) STM32U5
A5AJH6
Revision code
R
Date code
Ball A1
identifier Y WW
MSv71540V2
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
G
DETAIL A
e2 E E
e D A2
D
A
BOTTOM VIEW TOP VIEW
A3 SIDE VIEW
A2
b BUMP
FRONT VIEW
A1
eee Z
Z
b(208x)
ccc Z X Y
ddd Z
DETAIL A SEATING PLANE
ROTATED 90
B0DV_WLCSP208_ME_V1
Dpad
Dsm
1. Dimensions are expressed in millimeters.
Pitch 0.35 mm
Dpad 0,210 mm
Dsm 0.275 mm typ. (depends on soldermask registration tolerance)
Stencil opening 0.235 mm
Stencil thickness 0.100 mm
Ball A1 identifier
MSv70423V2
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
Z Seating plane
ddd Z
A2
A1 A
D1 A1 ball A1 ball X
identifier index area D
e F
A
G
E1 E
e
Y
R
15 1
BOTTOM VIEW Øb (216 balls) TOP VIEW
Ø eee M Z Y X
Ø fff M Z
A0L2_ME_V3
A - - 1.200 - - 0.0472
A1(2) 0.150 - - 0.0059 - -
A2 - 0.760 - - 0.0299 -
(3)
b 0.350 0.400 0.450 0.0138 0.0157 0.0177
D 12.850 13.000 13.150 0.5059 0.5118 0.5177
D1 - 11.200 - - 0.4409 -
E 12.850 13.000 13.150 0.5059 0.5118 0.5177
E1 - 11.200 - - 0.4409 -
e - 0.800 - - 0.0315 -
F - 0.900 - - 0.0354 -
G - 0.900 - - 0.0354 -
ddd - - 0.100 - - 0.0039
(4)
eee - - 0.150 - - 0.0059
fff(5) - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.
2. • The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metallized
markings, or other feature of package body or integral heat slug.
• A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1
corner. Exact shape of each corner is optional.
3. Initial ball equal 0.350 mm.
4. The tolerance of position that controls the location of the pattern of balls with respect to datums A and B.
For each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true
position with respect to datums A and B as defined by e. The axis perpendicular to datum C of each ball
must lie within this tolerance zone.
5. The tolerance of position that controls the location of the balls within the matrix with respect to each other.
For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position
as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each
tolerance zone fff in the array is contained entirely in the respective zone eee above The axis of each ball
must lie simultaneously in both tolerance zones.
Dpad
Dsm
BGA_WLCSP_FT_V1
Pitch 0.8 mm
Dpad 0.400 mm
0.470 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.400 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.120 mm
Product
identification (1) STM32U5A9
NJH6Q
Revision code
R
Date code
Y WW
Ball A1
identifier
MSv70424V2
MSv69529V1
1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.
7 Ordering information
Product type
U = ultra-low-power
Device subfamily
Pin/ball count
R = 64 pins
V = 100 pins
Q = 132 balls
Z = 144 pins or 150 balls
A = 169 balls
B = 208 balls
N= 216 balls
Package
T = LQFP
H = TFBGA
I = UFBGA
Y = WLCSP
Temperature range
Dedicated pinout
Packing
For a list of available options (such as speed or package) or for further information on any
aspect of this device, contact the nearest ST sales office.
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9 Revision history
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