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    EE212 Midterm Exam-2021

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    EE212 Midterm Exam-2021

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    EE212 Midterm Exam-2021

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    EE212 Electronics I Midterm Exam

    EE212
    - Electronics I -
    Midterm Exam

    Instructor: M. Zübeyir Ünlü, PhD


    zubeyirunlu@iyte.edu.tr

    Midterm Exam # 1 1
    EE212 Electronics I Midterm Exam Question # 1

    Question #1:

    Plot vO for the circuit in figure for the


    input shown for the two cases:

    (a) Vγ = 0 V.

    (b) Vγ = 0.7 V.

    Midterm Exam # 1 2
    EE212 Electronics I Midterm Exam Question # 2

    Question #2:

    (a) Sketch vo versus time for the circuit in figure. The


    input is a sine wave given by vi = 10 sinωt V.
    Assume Vγ = 0.7 V.

    (b) Determine the rms value of the output voltage.

    Midterm Exam # 1 3
    EE212 Electronics I Midterm Exam Question # 3

    Question #3:

    Consider the circuit in figure. Let Vγ = 0.

    a) Plot vO versus vI over the range −10 ≤ vI ≤ +10 V.

    b) Plot i1 over the same input voltage range as in part


    (a).

    Midterm Exam # 1 4
    EE212 Electronics I Midterm Exam Question # 4

    Question #4: In the circuit in figure, the transistor


    parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate
    VGS, ID, and VDS.

    Note: For n-Channel Enhancement-Mode MOSFET

    The region for which vDS < vDS(sat) is known as the nonsaturation or
    triode region. The ideal current–voltage characteristics in this region
    are described by the equation iD = Kn 2(vGS − VTN) vDS − v2DS

    In the saturation region, the ideal current–voltage characteristics for


    vGS > VT N are described by the equation iD = Kn(vGS − VT N)2

    Midterm Exam # 1 5
    EE212 Electronics I Midterm Exam Question # 5

    Question #5: The transistor in the circuit in figure has parameters


    VTP = −0.8 V and Kp = 0.20 mA/V2. Sketch the load line and plot the
    Q-point for VDD = 5 V, RD = 4 kΩ. What is the operating bias region?

    Note: For p-Channel Enhancement-Mode MOSFET

    The saturation point is given by vSD(sat) = vSG + VTP.

    For the p-channel device biased in the nonsaturation region, the


    current is given by iD = Kp [ 2(vSG + VTP) vSD − v2SD]

    In the saturation region, the current is given by iD = Kp(vSG + VTP)2

    Midterm Exam # 1 6

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