EEE-2301 Final Set-C - Autumn-2020
EEE-2301 Final Set-C - Autumn-2020
EEE-2301 Final Set-C - Autumn-2020
SET-C
1(a). Design an Emitter follower amplifier circuit. Why the amplifier is so CO3 An 03
called? U
1(b). Consider the fixed bias configuration of the network of “Fig. 1” where CO2 Ev 03
ro is infinite. Determine a) re, b) Zi, c) Zo, d) Av. Considering ro is 50 Ω
calculate Zoand Avand compare the result.
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2(a). What is the significant feature of a differential amplifier? Explain CO1 R, 02
common mode rejection of a differential amplifier. Un
2(b). There is a multistage RC-coupled transistor amplifier in “Fig. 2” If the CO2 Ev 03
input resistance of each stage is 1K, find: i) Voltage gain of first stage,
ii) voltage gain of second stage and iii) total voltage gain.
3(a). Why N channel FET’s are preferred over P channel FET’s? CO1 Ev 01
3(b). Determine the following from the following network shown in “Fig. 3”. CO2 Ev 02
(a) IDQ and VGSQ, (b) VDS
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4(a). What do you mean by threshold voltage? Why drain current of CO1 U 01
MOSFET is zero before threshold voltage?
4(b). Derive the expression for transconductance of MOSFET? CO1 An 02
4(c). Show the construction and principle of operation of Enhancement mode CO1 Ap 03
MOSFET with the help of suitable diagram.
5(a). Draw the V-I characteristics of UJT with the help of an equivalent circuit. CO1 R 01
5(b). The levels of V DS and I D are specified as VDS = 12VDD and ID = ID(on) CO3 Ev 03
for the network of “Fig. 4”. Determine the levels of V DD and R D. What
are the closest standard commercial values?
Prepared by,
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