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Abstract
Cadmium Sulfide thin films were deposited on soda-lime glass substrates by
chemical bath deposition technique at bath pH varying from 8 to 11. The films were annealed at temperature 120 °C for 5 min using radiative annealing. The best film coverage at thickness ~ 99 nm, with bandgap 2.15 eV and resistivity of 0.5x101 Ωcm was obtained at a bath pH 10. Introduction CdS is considered as one of the best-suited buffer layers for CdTe, CuZnSnSe2, CuInGaSe2 absorber layers in the heterojunction solar cell [1]. It has a direct bandgap of 2.2 to 2.42 eV at room temperature [2]. Hexagonal (wurtzite, P63mc) [3], and cubic (zincblende, F43m) [4] are two polymorphs of CdS with hexagonal being stable at room temperature. While several processing techniques such as vacuum evaporation, sputtering, spray pyrolysis and chemical bath deposition(CBD) [5], [6], [7], [8], [9] have been developed, CBD became most popular for solar cell applications, mainly because of its simplicity, high reproducibility, and ease of thickness control [2], [6]. CBD involves dipping the substrate in a chemical bath containing Cd2+ and S2- followed by annealing in conventional furnaces at temperatures > 150 °C for several minutes/hours [7], [10], [11]. The particle size, surface morphology and optical properties of the deposited CdS thin films depend on the stability constant of cadmium sources and pH of the solution during CBD [3], [5], [12]. Several attempts were made to reduce the processing time and exposure to higher temperatures, which results in inter- diffusion and degradation of already deposited layers [7], [8]. Earlier, attempts to achieve crystalline CdS thin films by quick annealing (≤5 min) required higher annealing temperatures>400 °C [4], [13]. To the best of our knowledge, there are no reports of CdS thin films processing within 5 min at temperatures as low as 120 °C to achieve crystalline films with desired bandgap and coverage. Rapid thermal annealing (RTA) utilises radiative heating of films for a few seconds/minutes, where most of light is absorbed by the top layer while the underneath layers remain largely unaffected. This would be a unique benefit of radiative annealing methods for processing multilayer systems such as solar cells. Here, we report the deposition of CdS thin films on soda-lime glass (SLG) by CBD technique at varying bath pH values to optimise the film coverage and thickness. As-deposited films were annealed at low temperature (120 °C) for 5 min in a radiative annealing chamber. Access through your organization Check access to the full text by signing in through your organization. Access through your organization Section snippets Experimental CdS thin films were deposited by CBD technique. Solutions of 6.7 mmol of cadmium acetate hydrate (Cd(CH3COO)2, ≥99.99%), 83 mmol of thiourea (CH4N2S, ≥ 99.0%) in DI water and 0.5 M NH4OH (25% GR, Merck) were separately prepared. The three solutions were heated to 95 °C and mixed in a bath. The pH of the solution was maintained by regulating the amount of NH4OH solution while the bath temperature was maintained at 80 °C. To deposit the CdS thin films, the SLG substrate was submerged into the Result and discussion Scanning electron microscopy revealed that the morphology, grain sizes and the yield of the CdS thin films were strongly dependent on the bath pH. At bath pH of 8 (Fig. 1a), the thin film was porous, and the coverage was not uniform (Fig. 1b) with clusters of average size 47 ± 18 nm. The primary gains in the cluster were in the range of 21.35 ± 3.27 nm. The average (of more than five different points) Cd:S atomic ratio obtained from EDS was ~ 5:1. On increasing the bath pH to 9, the grain size Conclusions Phase pure wurtzite-CdS thin films were obtained by radiative annealing (at 120 °C for 5 min) of CBD deposited films, saving a lot on thermal budget when compared to the furnace annealing. The thickness of the films reduced from ~125 to 83 nm, while the bandgap increased from 2.15 to 2.31 eV on increasing the bath pH from 8 to 11. A ~ 99 nm thick, stoichiometric CdS film, with uniform coverage having a bandgap and resistivity ~3.01 × 101 Ωcm suitable for solar cells buffer layer application was CRediT authorship contribution statement M S Pradeepkumar: Investigation, Methodology, Formal Analysis, Writing - original draft, Writing - review & editing. H V Singh: Investigation, Methodology. S Kumar: Investigation, Methodology. J Basu: Supervision, Writing - review & editing. Md. Imteyaz Ahmad: Formal Analysis, Funding acquisition, Supervision, Writing - original draft, Writing - review & editing. Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. Acknowledgement The authors would like to thank the DST-SERB, New Delhi, for financial support (Sanction no. ECR/2016/000854). References (17) T.D. Lee et al. Renew. Sustain. Energy Rev. (2017) D. Fernando et al. Mater. Sci. Semicond. Process. (2015) V.D. Moreno-Regino et al. J. Alloys Compd. (2019) E. Yücel et al. Ceram. Int. (2016) K.V. Zinoviev et al. Mater. Chem. Phys. (2001) B. Ghosh et al. Appl. Surf. Sci. (2014) M.A. Islam et al. Energy Procedia (2013) J. Enríquez Sol. Energy Mater. Sol. Cells. (2003) There are more references available in the full text version of this article. Cited by (5) Wurtzite nanoparticle ink spray processing for chalcopyrite CuIn(S,Se)<inf>2</inf> photovoltaic absorber layer 2024, Materials Science in Semiconductor Processing Show abstract Phase transformation and grain growth in spray deposited wurtzite CuInS<inf>2</inf> films 2022, Ceramics International Citation Excerpt : Of all the polymorphs, chalcopyrite CISSe is the most promising candidate for PV absorbers. It has been reported to exhibit the highest PCE compared to the other allotropes [15], mainly due to its suitable bandgap (1.01 eV) [26], absorption coefficient (103 -105cm−1) [27], and nearly matching lattice constants with the buffer layer CdS [28,29]. Large elongated grains are preferred for the application as a PV absorber, which is generally achieved after the selenization [18,30–32]. 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