1/18/22, 11:59 AM Semiconductor Devices (MPHDSE1SET)
Semiconductor Devices (MPHDSE1SET)
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Semiconductor Devices (MPHDSE1SET)
Date: 18/01/2022 Time: 12:00 am to 1:30 pm
Instructions: 1. All questions are compulsory. 2. Each MCQ carries 2 marks. 3. Link will be closed after 1.40 pm. 4. Total marks=30
For Ideal MOS characteristics we assume *
a) Oxide has many charges
b) Work function of metal and semiconductor are same
c) Oxide has finite resistivity
d) All of the above
When V≠0, three cases of energy band diagram for Ideal MOS diodes are *
a) Accumulation, Depletion, Inversion
b) Accumulation, Capacitance, Depletion
c) Depletion, Capacitance, Inversion
d) Accumulation, Saturation, Inversion
https://docs.google.com/forms/d/e/1FAIpQLSfPn1sFsqSU9gu9yqiUAJMaXSyJFQ4G8j2xGA66ZsSJqAayYg/formResponse 1/7 1/18/22, 11:59 AM Semiconductor Devices (MPHDSE1SET)
Which of the following is correct statement? *
a) Capacitance method is slower method of calculating interface trapped charges.
b) Capacitance method is indirect method as the difference between two
capacitances must be calculated.
c) Conductance method is less accurate method for calculating interface trapped
charges.
d) None of the above
MOSFET is also referred to as ________. *
a) FET
b) UJT
c) MESFET
d) IGFET
Tunnel diode has effectively ____________ due to tunneling *
a) Positive resistance
b) Negative resistance
c) Zero resistance
d) Exponential resistance
https://docs.google.com/forms/d/e/1FAIpQLSfPn1sFsqSU9gu9yqiUAJMaXSyJFQ4G8j2xGA66ZsSJqAayYg/formResponse 2/7 1/18/22, 11:59 AM Semiconductor Devices (MPHDSE1SET)
Necessary condition for tunneling is *
a) Tunneling potential barrier height is low
b) Tunneling potential barrier width is small enough
c) There has to be finite tunneling probability
d) All the above.
For metal-insulator-semiconductor diode, the current-voltage characteristics
critically depends on *
a) Insulator thickness
b) Metal thickness
c) Semiconductor thickness
d) None of the above.
LED operates under __________ with light being emitted mainly due to __________ and mainly requires ___________ *
a) Forward bias, band-to-band recombination, direct band gap
b) Reverse bias, band-to-band recombination, direct bandgap
c) Forward bias, Auger recombination, indirect bandgap
d) Forward bias, S-R-H recombination, direct bandgap
https://docs.google.com/forms/d/e/1FAIpQLSfPn1sFsqSU9gu9yqiUAJMaXSyJFQ4G8j2xGA66ZsSJqAayYg/formResponse 3/7 1/18/22, 11:59 AM Semiconductor Devices (MPHDSE1SET)
The energy of photon emitted due to band-to-band recombination in an LED is
___________ the bandgap energy and depends on _____________ and the emission is _________. *
a) Greater than, effective mass of holes, monochromatic
b) Lesser than, effective mass of electrons, not monochromatic
c) Greater than, effective mass of holes and electrons, not monochromatic
d) Greater than, effective mass of holes and electrons, monochromatic
Advantages of a-Si:H over C-Si is? *
a) Expensive
b) high efficiency
c) less material required
d) thermally stable
https://docs.google.com/forms/d/e/1FAIpQLSfPn1sFsqSU9gu9yqiUAJMaXSyJFQ4G8j2xGA66ZsSJqAayYg/formResponse 4/7 1/18/22, 11:59 AM Semiconductor Devices (MPHDSE1SET)
Define the characteristic curves: [ I: current, V: voltage, P: Power] [in the format Y axis variable – X axis variable] *
a) a: I-V curve and b: P-V curve
b) a: V-I curve and b: V-P curve
c) a: P-V curve and b: I-V curve
d) a: V-P curve and b: V-I curve
0-D nanomaterials follows which of the following quantum confinement? *
a) Both 1-D and 2-D confinement
b) 1-D confinement
c) 2-D confinement
d) 3-D confinement
https://docs.google.com/forms/d/e/1FAIpQLSfPn1sFsqSU9gu9yqiUAJMaXSyJFQ4G8j2xGA66ZsSJqAayYg/formResponse 5/7 1/18/22, 11:59 AM Semiconductor Devices (MPHDSE1SET)
What is the general name for the class of structure made of rolled up carbon lattices? *
a) Nanorods
b)Nanotubes
c) Nanosheets
d) Fullerrods
Which ratio decides the efficiency of nano-substances? *
a) Weight/volume
b) Surface area/volume
c) Volume/weight
d) Pressure/volume
What’s the procedure in Top-down fabrication method? *
a) Nano-particles -> Powder -> Bulk
b) Powder -> Bulk – > Nano-particles
c) Bulk -> Powder – > Nano-particles
d) Nano-particle – > Bulk -> Powder
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