Actively Tunable Single PeakBroadband Absorbent Hi
Actively Tunable Single PeakBroadband Absorbent Hi
Actively Tunable Single PeakBroadband Absorbent Hi
Article
Actively Tunable “Single Peak/Broadband” Absorbent, Highly
Sensitive Terahertz Smart Device Based on VO2
Baodian Fan 1 , Hao Tang 2 , Pinghui Wu 2 , Yu Qiu 1 , Linqin Jiang 1 , Lingyan Lin 1 , Jianzhi Su 2 , Bomeng Zhou 2
and Miao Pan 2, *
1 Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University,
Fuzhou 350108, China; fanbd@fjjxu.edu.cn (B.F.); yuqiu@fjjxu.edu.cn (Y.Q.); linqinjiang@fjjxu.edu.cn (L.J.);
lingyanlin@fjjxu.edu.cn (L.L.)
2 Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and
Information Engineering, Quanzhou Normal University, Quanzhou 362000, China;
18350115109@139.com (H.T.); phwu@zju.edu.cn (P.W.); sujianzhi@126.com (J.S.); simonqz@foxmail.com (B.Z.)
* Correspondence: miaopan2021@163.com; Tel./Fax: +86-0595-22796091
Abstract: In recent years, the development of terahertz (THz) technology has attracted significant
attention. Various tunable devices for THz waves (0.1 THz–10 THz) have been proposed, including
devices that modulate the amplitude, polarization, phase, and absorption. Traditional metal materials
are often faced with the problem of non-adjustment, so the designed terahertz devices play a single
role and do not have multiple uses, which greatly limits their development. As an excellent phase
change material, VO2 ’s properties can be transformed by external temperature stimulation, which
provides new inspiration for the development of terahertz devices. To address these issues, this study
innovatively combines metamaterials with phase change materials, leveraging their design flexibil-
ity and temperature-induced phase transition characteristics. We have designed a THz intelligent
absorber that not only enables flexible switching between multiple functionalities but also achieves
precise performance tuning through temperature stimulation. Furthermore, we have taken into con-
sideration factors such as the polarization mode, environmental temperature, structural parameters,
and incident angle, ensuring the device’s process tolerance and environmental adaptability. Addi-
tionally, by exploiting the principle of localized surface plasmon resonance (LSPR) accompanied by
Citation: Fan, B.; Tang, H.; Wu, P.;
local field enhancement, we have monitored and analyzed the resonant process through electric field
Qiu, Y.; Jiang, L.; Lin, L.; Su, J.; Zhou,
characterization. In summary, the innovative approach and superior performance of this structure
B.; Pan, M. Actively Tunable “Single
Peak/Broadband” Absorbent, Highly provide broader insights and methods for THz device design, contributing to its theoretical research
Sensitive Terahertz Smart Device value. Moreover, the proposed absorber holds potential for practical applications in electromagnetic
Based on VO2 . Micromachines 2024, 15, invisibility, shielding, modulation, and detection scenarios.
208. https://doi.org/10.3390/
mi15020208 Keywords: terahertz; heat regulation; vanadium dioxide; metamaterial; local surface plasmon resonance
ω P2
ε(ω )VO2 = ε ∞ − (1)
ω (ω + iγ)
σ 2
ω P2 = ω (2)
σ0 P0
Micromachines 2024, 15, x FOR PEER REVIEW 3 of 14
Figure
Figure1. 1.(a)(a)Structure
Structurearray
arraydiagram
diagramofof
the TIA;
the (b)
TIA; xyxy
(b) plane
plane diagram
diagramofof
periodic unit;
periodic (c)(c)
unit; periodic
periodic
unit yzyz
unit plane
plane diagram;
diagram;(d)(d)
TIA
TIAdevice preparation
device preparationprocess flow
process flowchart.
chart.
Here,
Here,ε ∞𝜀is the dielectric parameter at a high frequency, which has a value of 12, and
∞ is the dielectric parameter at a high frequency, which has a value of 12, and
ω𝜔P 𝑃is is
the
the plasmafrequency
plasma frequencyrelated
relatedtoto conductivity,
conductivity, as illustrated in
as illustrated in Equation
Equation(2). (2).The
Thein-
initial × 15 −1 5 5 −1−1
15s −1, σ0 = 3 × 10 Sm
itial value of the plasma frequency is 𝜔𝑃0 = 1.45 × 10 s , 𝜎0 = 3 × 10 Sm , andthe
value of the plasma frequency is ω P0 = 1.45 10 , and the
13 −1
collision frequencyγ 𝛾==5.75
collisionfrequency 5.75×× 101013 ss −1.. The
The conductivity
conductivity σ𝜎 willwillvary
varywith
withthe thephase
phase
change
change ofof
thethe
vanadium
vanadium dioxide film.
dioxide From
film. the relationship
From between
the relationship the dielectric
between constant
the dielectric con-
and the conductivity of the material, we are able to obtain the relational equation
stant and the conductivity of the material, we are able to obtain the relational equation for the
for
conductivity of vanadium dioxide films at various temperatures in the phase transition
process, as shown in Equation (3) [35,36].
σ = −iε 0 ω (ε c − 1 ) (3)
Micromachines 2024, 15, 208 4 of 13
broadband absorption. When the absorber interacts with external electromagnetic waves,
the resonant structure resonates with specific frequencies of the external electromagnetic
waves.
Figure 2.This resonance
Schematic results
diagram in the
of the generation
spectral curve ofofthe
absorption peaks at certain
TIA. (a) Absorption curves offrequencies.
vanadium
dioxide
The cube in thedesign
appropriate metallicofstate (T = 345 K)structure
the resonant and the insulating
enables the state (T = 312 to
absorber K);possess
(b) absorption
multi-
spectra
ple of TIA devices
resonance in TE and
frequencies, eachTMleading
modes. to a strong absorption. Furthermore, under the
excitation of external terahertz waves, the interaction and coupling between the excited
To investigate
electromagnetic the intrinsic
modes on the TIA mechanism
structure behind
cause the theresonance
ultra-wideband absorption
frequencies exhib-
to be closely
ited by the absorber when vanadium dioxide is in its metallic state,
spaced, resulting in overlapping and coinciding absorption peaks, ultimately achieving we conducted simu-
lations
REVIEWand absorption
Micromachines 2024, 15, x FOR PEERbroadband plotted the[44].surface electric field and its components at different
Thus, it can be concluded that the combination of the circular frequencies,
5 of 14
as illustrated
ring in Figure
and the square disk3.constitutes
The observations revealed
a successful a distinct
resonant distribution of the internal
structure.
electric field within the absorber on both the gold ring and the vanadium dioxide square
at lower and mid-range frequencies. However, as the frequency transitioned from the
mid-range to high frequencies, the field strength inside the absorber shifted towards the
center, with a more concentrated and stronger electric field on the vanadium dioxide disk
compared to the gold ring. This indicates that the resonant response at high frequencies
is primarily contributed by the vanadium dioxide square. In fact, the combination of the
gold ring and the four vanadium dioxide squares forms a resonant structure, which is
responsible for the broadband absorption. When the absorber interacts with external elec-
tromagnetic waves, the resonant structure resonates with specific frequencies of the exter-
nal electromagnetic waves. This resonance results in the generation of absorption peaks
at certain frequencies. The appropriate design of the resonant structure enables the ab-
sorber to possess multiple resonance frequencies, each leading to a strong absorption. Fur-
thermore, under the excitation of external terahertz waves, the interaction and coupling be-
tween the excited electromagnetic modes on the TIA structure cause the resonance frequen-
Figure2.2.Schematic
Figure Schematic diagram
diagram of ofthe
thespectral
spectralcurve
curveof
ofthe
theTIA.
TIA.(a)
(a)Absorption
Absorptioncurves
curvesofofvanadium
vanadium
cies to be closely spaced, resulting in overlapping and coinciding absorption peaks, ulti-
dioxidecube
dioxide cubeininthe
themetallic
metallicstate
state(T(T==345
345K)K)and
andthe
theinsulating
insulatingstate
state(T(T==312
312K);
K);(b)
(b)absorption
absorption
mately achieving broadband absorption [44]. Thus, it can be concluded that the combination
spectraof
spectra ofTIA
TIAdevices
devicesininTE
TEand
andTM TMmodes.
modes.
of the circular ring and the square disk constitutes a successful resonant structure.
To investigate the intrinsic mechanism behind the ultra-wideband absorption exhib-
ited by the absorber when vanadium dioxide is in its metallic state, we conducted simu-
lations and plotted the surface electric field and its components at different frequencies,
as illustrated in Figure 3. The observations revealed a distinct distribution of the internal
electric field within the absorber on both the gold ring and the vanadium dioxide square
at lower and mid-range frequencies. However, as the frequency transitioned from the
mid-range to high frequencies, the field strength inside the absorber shifted towards the
center, with a more concentrated and stronger electric field on the vanadium dioxide disk
compared to the gold ring. This indicates that the resonant response at high frequencies
is primarily contributed by the vanadium dioxide square. In fact, the combination of the
gold ring and the four vanadium dioxide squares forms a resonant structure, which is
responsible for the broadband absorption. When the absorber interacts with external elec-
tromagnetic waves, the resonant structure resonates with specific frequencies of the exter-
nal electromagnetic waves. This resonance results in the generation of absorption peaks
at certain frequencies. The appropriate design of the resonant structure enables the ab-
sorber to possess multiple resonance frequencies, each leading to a strong absorption. Fur-
thermore, under the excitation of external terahertz waves, the interaction and coupling be-
tween3.the
Figure excited
(a–c) electromagnetic
and (d–f) modes
show the electric on the TIAand
field distribution structure cause
the electric the
field resonance
component Ezfrequen-
distribu-
ciesontothe
tion besurface
closely spaced,
of the resulting
absorber in overlapping
at frequencies f = 7.74 THz,and coinciding
f = 9.0 THz, and fabsorption peaks, ulti-
= 10.5 THz, respectively.
mately achieving broadband absorption [44]. Thus, it can be concluded that the combination
Subsequently,
of the the the
circular ring and intrinsic
squaremechanism behind
disk constitutes the narrowband
a successful resonant absorption
structure. of the
absorber in the insulating state of vanadium dioxide was investigated. Figure 4a,b depict
the absorption characteristics of the absorber with and without the vanadium dioxide disk,
respectively (with the vanadium dioxide disk in the insulating state). It is evident that
both structures exhibit a resonance frequency at f = 7.45 THz. The first structure achieves
a peak absorption rate of >99.4%. The absorber consists solely of a gold ring, which acts
as a resonator. Upon interaction between the terahertz wave at f = 7.44 THz and the gold
layer. The structure of the absorber is analogous to the scenario when only the gold ring
is present. The absorption peak can be explained in the same way, but the overall absorber
performance in the second structure surpasses that of the first structure. By comparing the
absorbers in both structures presented in Figure 4, it is evident that the surface current
Micromachines 2024, 15, 208 density and electric field intensity in the second structure surpass those in the first struc- 6 of 13
ture. This enhancement is attributed to the presence of the vanadium dioxide disk, which
amplifies the resonance effect of the gold ring to a certain extent [45]. According to the
ring structure,
classical a resonance
three-layer structureeffect manifests,
of the absorber,resulting in localizedcoupling
the electromagnetic field enhancements,
caused by the as
illustrated
reverse in Figure
current on the4c. This and
upper resonance effectively
lower surfaces establishes
will a dipole
limit the ability ofoscillation mode,
the electromag-
tightly
netic confining
wave to reachthe energy
the middleof dielectric
the incident terahertz
layer, so thatwave intemperatures,
at low the near field, VO
substantially
2 exhibits
depleting the incident wave’s energy and thereby generating a resonance absorption
an insulating state and works with the middle dielectric layer so that more energy is lim- peak
at f = 7.44 THz.
ited and a higher absorption peak is generated.
Figure 4. (a,b) are the absorption spectra of the two structures at T = 312 K, respectively. (c,d) are the
surface electric field distributions of the two structures |E| when f = 7.44 THz.
The second structure achieves a peak absorption rate of >99.7%. In this case, as the
vanadium dioxide disk is in the insulating state, its role is equivalent to that of a dielectric
layer. The structure of the absorber is analogous to the scenario when only the gold ring is
present. The absorption peak can be explained in the same way, but the overall absorber
performance in the second structure surpasses that of the first structure. By comparing
the absorbers in both structures presented in Figure 4, it is evident that the surface current
density and electric field intensity in the second structure surpass those in the first structure.
This enhancement is attributed to the presence of the vanadium dioxide disk, which
amplifies the resonance effect of the gold ring to a certain extent [45]. According to the
classical three-layer structure of the absorber, the electromagnetic coupling caused by the
reverse current on the upper and lower surfaces will limit the ability of the electromagnetic
wave to reach the middle dielectric layer, so that at low temperatures, VO2 exhibits an
insulating state and works with the middle dielectric layer so that more energy is limited
and a higher absorption peak is generated.
In addition, we introduce the equivalent circuit diagram to explain the two absorption
modes, as shown in Figure 5. When the external electromagnetic wave is incident, the
induced current of the device is excited by the upper and lower metal layers. Treating the
underlying metal layer as a wire, the equivalent impedance of the intermediate dielectric
layer is regarded as Zd , which is related to its dielectric constant. The equivalent resistance
of the top microstructure is regarded as Zg , and Zg is expressed as Zg = R + jωL − j/ωc,
ω = 2π f . This indicates the frequency, and the value of Zg is affected by the structure and
size of the microstructure. Because the external free impedance Z0 is 377 Ω, when the
overall impedance of the device is equal to the external free impedance, the impedance
layer is regarded as Zd, which is related to its dielectric constant. The equivalent resistance
of the top microstructure is regarded as Zg, and Zg is expressed as Zg = R + jωL − j/ωc, ω =
2𝜋𝑓. This indicates the frequency, and the value of Zg is affected by the structure and size
of the microstructure. Because the external free impedance Z0 is 377 Ω, when the overall
Micromachines 2024, 15, 208 impedance of the device is equal to the external free impedance, the impedance matching 7 of 13
condition of the absorber can be achieved, and the maximum absorption benefit is formed.
We can adjust the size of Zg by changing the formation of the top microstructure and the
matching
propertiescondition of the absorber
of the internal structure,cansobethat
achieved, and the
the overall maximum
absorption absorption
system can meet benefit
the
isimpedance
formed. We can adjust
matching conditions. Zg by changing
the size ofAccording the formation
to transmission lineof the topthe
theory, microstructure
transmission
and theof
matrix properties
the top VO of2 the internal structure,
microstructure and theso that the
middle overalllayer
dielectric absorption system can
can be expressed as
meet the
[46,47]: impedance matching conditions. According to transmission line theory, the
transmission matrix of the top VO2 microstructure and the middle dielectric layer can be
1 0
expressed as [46,47]: 1
( ! ) (4)
1 0 1
𝑅 + 𝑗𝜔𝐿1
− 𝑗/𝜔𝐶 (4)
R+ jωL− j/ωC 1
cosℎ 𝛾ℎ −Z sinh 𝛾ℎ
(cos 1hγh − Zsinhγh ) (5)
(5)
− Z−
1
sinsinℎ
𝑍
hγh𝛾ℎ coscosℎ hγh𝛾ℎ
whereZZrepresents
where representsthethenormalized
normalized characteristic
characteristic impedance,
impedance, γ represents
𝛾 represents the transmission
the transmis-
coefficient
sion coefficient of the material, which is related to the free space permeabilityand
of the material, which is related to the free space permeability andits itsown
own
dielectric constant, and h represents the thickness of the material.
dielectric constant, and h represents the thickness of the material. When the impedance When the impedance
matching
matchingcondition
conditionisisreached,
reached,the therelative
relativeimpedance
impedancewill willbebe1.1. Finally,
Finally,we wecancanseeseefrom
from
simple observations that the impedance value of the top VO layer
simple observations that the impedance value of the top2 VO2 layer can be adjusted be- can be adjusted between
10 to the10fourth
tween to thepower
fourthand power 10 the
andfirst power.
10 the firstNow
power. that our that
Now structure is fixed, the
our structure process
is fixed, the
isprocess
regulated by changing the internal structural properties of VO 2 .
is regulated by changing the internal structural properties of VO2. At both low andAt both low and high
temperatures,
high temperatures, it canitbe
cancombined
be combined withwithZd Ztod to
achieve
achieve impedance
impedancematchingmatchingconditions,
conditions,
resulting in an electromagnetic response and perfect
resulting in an electromagnetic response and perfect absorption. absorption.
Figure5.5.Equivalent
Figure Equivalentresonant
resonantcircuit
circuitof
ofthe
thestructural
structuralunit.
unit.
In the preceding discussion, we delved into the absorption efficiency and underlying
mechanisms of the absorber under ideal conditions. However, in practical applications,
there often exists a discrepancy between the structural parameters and theoretical models,
which can potentially impact the absorption efficiency of the absorber [48–50]. To better
adapt the absorber to real-world production, we have conducted separate investigations
of the influence of structural parameters on the absorption efficiency at temperatures of
T = 345 K and T = 312 K. At T = 345 K, based on an analysis of Figure 6a,b,d, it can be
observed that the absorption efficiency at high frequencies remains largely unaffected by
variations in the outer ring radius ‘R’ and the gap distance ‘w’ between the metal outer ring
and VO2 , as well as their thickness ‘t’. This behavior can be attributed to the dominant
contribution of the VO2 square in the high-frequency resonance response. However, in
the case in Figure 6c, the high-frequency absorption efficiency exhibits an initial increase
followed by a decrease with an increasing gap distance ‘d’. This can be attributed to
Micromachines 2024, 15, 208 8 of 13
Figure 6. (a–d) are the scanning graphs of four main parameters affecting the broadband absorption
Figure 6. (a–d) are the scanning graphs of four main parameters affecting the broadband absorption
performance of TIA devices at T = 345 K. (e,f) are the scans of two main parameters affecting the
performance of TIA devices at T = 345 K. (e,f) are the scans of two main parameters affecting the
narrowband absorption performance of TIA devices at T = 312 K.
narrowband absorption performance of TIA devices at T = 312 K.
In addition to considering the geometric parameters, we also studied the absorption
performance of the absorber at different temperatures, as shown in Figure 7. It can be
observed from the figure that when the conductivity ‘σ’ of the vanadium dioxide (VO2)
square varies in the range of 50,000–200,000 S/m, the absorber achieves broadband absorp-
tion in the range of 8.5–11 THz. Within this range of conductivity, the VO2 square behaves
as a metal. The absorber exhibits a traditional metal–dielectric–metal structure. By care-
Micromachines 2024, 15, 208 9 of 13
Figure 7. The absorber is affected by different temperatures. (a) Schematic drawings of absorption
curves at different temperatures; (b)
(b) the
the absorption
absorption curve
curve corresponding
corresponding to
to the
the contour.
contour.
detection during the cooling process. However, compared to previous reports, the designed
TIA exhibits significant advantages and improvements, as shown in Table 1 [59–62]. Not
only does the absorber have a significantly broadened bandwidth, but it also has an en-
hanced absorption performance. Additionally, the absorber offers a wide modulation range
and can flexibly switch between ultra-broadband absorption and narrowband absorption.
Micromachines 2024, 15, x FOR PEERThese
REVIEW 11 of 14
characteristics greatly increase its potential applications in areas such as terahertz
sensing and stealth technology.
Figure8.8.Absorption
Figure Absorptionspectra
spectraofofthe
theabsorber
absorberatat(a)(a)TT==312
312KKand (b)TT==345
and(b) 345K,K,where
wherethe
theincidence
incidence
angleofofthe
angle thelight
lightsource
sourceincreases from0◦0°toto4040°,
increasesfrom ◦ , and
andthe
thecorresponding
correspondingcontour
contourdiagram
diagramofofthe
the
absorption spectra.
absorption spectra.
Table1.1.Some
Table Somecoordinated
coordinatedterahertz
terahertzabsorbers
absorbersininrecent
recentyears.
years.
variations. In summary, the proposed THz smart absorber, referred to as a TIA, exhibits
dynamic tunability, contactless adjustment, multifunctionality, polarization independence,
and low-angle insensitivity, offering superior absorption bandwidth and enhanced control
capabilities compared to previous similar absorbers. Therefore, it holds great potential for
applications in the THz frequency range, such as sensing and stealth technologies.
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