Transistor Charateristics

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ELECTRONICS LAB REPORT

EXPERIMENT (4)
DIODE AND TRANSISTOR
CHARACTERISTICS

Date:---------------------------------
Name:-------------------------------- Partner’s Name:-------------------
Registration No:------------------- Registration No:--------------------
Physics Section:-------------------- Instructor’s Name:-----------------

DATA AND DATA ANALYSIS

1st. DIODE CHARACTERISTICS

1- Connect the circuit shown in figure 1.

A
500 Ω

V
0-25 V

Fig. 1

2- Measure the current I versus forwared voltage V. Enter your data in


Table 4.1
Table (4.1)
Power supply 0.2 0.4 0.6 0.8 1 2 3 4 5 6 7 8 9 10
voltage ( V )
Forward
voltage (V)
Current (mA)

3- Reverse the diode connections and measure the current I versus


reversre voltage V. Enter your data in Table 4.2

1
Table (4.2)
Power supply 2 4 6 8 10 12 14 16 18 20 22 24
voltage ( V )
Reverse
voltage (V)
Current (µA)

4- Plot agraph for the current I versus voltage V for both of the two regions
(forward biase and reverse biase) on the same sheet of graph paper.

5- From the graph determine the forward voltage at which the diode begins
to conduct.
The forward voltage = ………………………….

6- Determine whether the diode is a silicon or germanium diode.

B. TRANSISTOR CHARACTERISTICS

1- Connect the circuit shown in figure 2.

mA
25 V
30 KΩ V
5V
µA
1 KΩ

Fig. 2

2- For a base current IB = 0, take a set of readings of IC versus VCE . Repeat


for IB = 20, 40, 60, 80 and 100 µA. Inter your values in table 4.3

2
Table (4.3)
VCE IC (mA)
(V) IB=0 µA IB=20 µA IB=40 µA IB=60 µA IB=80 µA IB=100 µA
0.2
0.4
0.6
0.8
1
2
4
6
8
10
12
14
16
18
20

3- Plot the characteristics of a common emitter npn transistor by plotting IC


versus VCE for constant IB.

4- From the transistor characteristics obtained determine the common emitter


current gain Bdc, where Bdc = IC/ IB, for VCE = 6 Volts and IB =60 µA.

3
Questions:-

1- Figure 3 shows the collector characteristics curves. Show on the graph


the following operation regions in transistor:-
a- cut off region.
b- active region.
c- saturated region.
d- break down region.

IC(mA)
IB=100 µA
10
IB=80 µA
8
IB=60 µA
6
IB=40 µA
4
IB=20 µA
2
VCE(V)
5 10 15 20 25

Fig. 3

2- Determine IB, IC, IE, VBE, VCE and VCB in the circuit shown in figure 4.
The transistor has Bdc =150.

100 Ω

10 KΩ 10 V

5V βdc=150

Fig. 4

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