22b3952 11october

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EE204 (Analog Circuits)

Summarising the class on 11.10.2023


22B3952
Last time we were done till DC Offset, Voltage Gain, DC input bias current (I/p
bias current) and offset current, Gain Bandwidth and Slew Rate, Ideal
Integrator and Now we’ll move on to MOSFET, MOSFET in 3D, its connections
and its operations.

MOSFET:
MOSFETs are essential electronic devices used to control the flow of electric
current in a wide range of applications. They belong to the family of field-effect
transistors and are essential for modern electronics due to their small size, high
efficiency, and precise switching capabilities.
MOSFETs have four terminals: source, gate, drain, and body. The body terminal
is usually connected to the source terminal, making them three-terminal
devices like other field-effect transistors. MOSFETs can be used in both analog
and digital circuits.

Comprising three fundamental components, a MOSFET includes a metal gate,


an insulating oxide layer, and a semiconductor channel. When an electrical
voltage is applied to the metal gate relative to the semiconductor, it generates
an electric field within the oxide layer. This electric field impacts the
conductivity of the semiconductor channel, enabling precise regulation of the
current flow between the source and drain terminals.
MOSFETs come in two primary variants, N-channel and P-channel, each
influencing its operational characteristics. N-channel MOSFETs are primarily
employed for low-side switching, whereas P-channel MOSFETs are commonly
utilized for high-side switching tasks. The voltage applied to the gate terminal
dictates whether the MOSFET operates in an "on" or "off" state, rendering it an
excellent choice for digital switching applications.

MOSFET in 3D:
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an essential
electronic component used to control the flow of electrical current in various
applications. In three-dimensional terms, a MOSFET consists of a thin, flat,
semiconductor material that acts as a channel. Above this channel, there's a
layer of insulating oxide material, and on top of that, there is a metal gate.
When a voltage is applied to the metal gate, it creates an electric field within
the oxide layer, which influences the conductivity of the semiconductor
channel. This manipulation of conductivity allows precise control of electrical
current flow between the source and drain terminals of the device.
In a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), the channel
refers to the region within the semiconductor material where the flow of
electrical current can be controlled. This channel is located between the source
and drain terminals and plays a crucial role in the transistor's operation.

 Channel length: Longer channels are slower and more resistant, while
shorter channels are faster and less resistant. However, making the
channel too short can lead to undesirable effects.
 Channel width: Wider channels have a higher current capacity, while
narrower channels have a lower current capacity. However, narrow
channels can also have faster switching speeds.
MOSFET CONNECTIONS:

1. Identify the type of MOSFET: N-channel for low-side switching, P-channel


for high-side switching.
2. Connect the source terminal to ground.
3. Connect the drain terminal to the load.
4. Connect the gate terminal to the control signal source.
5. Add a gate resistor (100-1,000 ohms) to protect the MOSFET.
6. Ensure that the control signal source and the load share a common
ground.
7. Apply voltage to the gate terminal to turn the MOSFET on or off.
MOSFET OPERATIONS:

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