Designed for use in general purpose power amplifier and switching applications. • Collector-emitter sustaining voltage-Vceo(sus) = 100V (minimum). • Collector-emitter saturation voltage-Vce(sat) = 1.5V (maximum) at Ic = 6A. • Current gain-bandwidth product ft = 3MHz (minimum) at Ic = 500mA.
Maximum Ratings Characteristics Symbol Values Unit Collector-Emitter Voltage Vceo 100 Collector-Base Voltage Vcbo V Emitter-Base Voltage Vebo 5 Collector Current - Continuous 6 Ic - Peak 10 A Base Current Ib 2 Total Power Dissipation at Tc = 25°C 65 W Pd Derate above 25°C 0.52 W/°C Operating and Storage Junction -65 to Tj, Tstg °C Temperature Range +150
Thermal Characteristics Characteristics Symbol Values Unit Thermal Resistance Junction to Case Rθjc 1.92 °C/W
Electric Characteristics (Tc = 25°C unless otherwise noted)
Characteristics Symbol Minimum Maximum Unit Off Characteristics Collector-Emitter Sustaining Voltage (1) Vceo(sus) 100 - V (Ic = 30mA, Ib = 0) Collector Cut-off Current Iceo - 0.7 (Vce = 60V, Ib = 0) Collector Cut-off Current Ices - 0.4 mA (Vce = 100V, Veb = 0) Emitter Cut-off Current Iebo - 1 (Veb = 5V, Ic = 0) On Characteristics (1) DC Current Gain (Ic = 0.3A, Vce = 4V) hFE 30 75 - (Ic = 0.3A, Vce = 4V) 15
There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e. the transistor must not be subjected to greater dissipation than curves indicate. The data of curve is base on Tj(PK) = 150°C; Tc is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided Tj(PK) ≤150°C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Description Part Number PNP Power Transistor TIP42C
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