600V N-Channel Super Junction MOSFET

Voltage 600 V Rdson 190 mΩ ITO-220AB-F

Current 20 A Qg 40 nC

Feature:
 RDS(ON) Max, VGS@10V: 190mΩ
 Easy to use/ drive
 High Speed Switching and Low RDS(ON)
 100% Avalanche Tested
 100% Rg Tested
 Lead free in compliance with EU RoHS 2.0
 Green molding compound as per IEC 61249 standard

Mechanical Data
 Case: ITO-220AB-F package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.068 ounces, 2 grams

Application
 PFC, TV Power, PC Power, PD Charger, Adapter, Server, UPS

Absolute Maximum Ratings (TA = 25 oC unless otherwise specified)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage @ Tjmax VDS 650
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30
TC=25oC 20
Continuous Drain Current ID A
TC=100oC 13
Pulsed Drain Current TC=25oC IDM 60 A
Single Pulse Avalanche Energy EAS 420 mJ
MOSFET dv/dt ruggedness dv/dt 50 V/ns
TC=25oC 38
Power Dissipation PD W
TC=100oC 15
Insulation Withstand Voltage for ITO-220AB-F VISO 3.5 kV

Operating Junction and Storage Temperature Range -55~150 oC

TJ,TSTG

Thermal Characteristics
PARAMETER SYMBOL MAXIMUM UNITS
Junction-to-Case 3.3 oC/W
RθJC
Thermal Resistance
Junction-to-Ambient (Note 3) RθJA 62.5 oC/W

June 4,2021 PJMF190N60E1-REV.00 Page 1

Electrical Characteristics (TA = 25 oC unless otherwise specified)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS

Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 600 670 -
V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 3.1 4
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=9.5A(Note 1) - 157 190 mΩ
Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA
Transfer characteristics gfs VDS=20V, ID=20A - 18 - S
Dynamic (Note 5)

Total Gate Charge Qg - 40 -

VDS=480V, ID=20A,
Gate-Source Charge Qgs - 9 - nC
VGS=10V
Gate-Drain Charge Qgd - 17 -
Input Capacitance Ciss - 1410 -
VDS=400V, VGS=0V,
Output Capacitance Coss - 50 -
f=250kHz
Reverse Transfer Capacitance Crss - 13 -
pF
VDS=0V to 480V,
Effective Output Capacitance
Co(er) VGS=0V, f=250kHz - 68 -
Energy Related
(Note 4)

Turn-On Delay Time td(on) - 51 -

VDD=300V, ID=20A,
Turn-On Rise Time tr - 81 -
VGS=10V, RG=25Ω ns
Turn-Off Delay Time td(off) (Note 2)
- 174 -
Turn-Off Fall Time tf - 78 -
Gate Resistance Rg f=1.0MHz - 8 - Ω
Drain-Source Diode
Maximum Continuous Drain-Source
IS - - 20 A
Diode Forward Current
Diode Forward Voltage VSD IS=20A, VGS=0V - - 1.4 V
Reverse Recovery Charge Qrr IS=20A - 6.5 - μC
Reverse Recovery Time Trr di/dt=100A/μs - 380 - ns

NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance.
4. Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS
5. Guaranteed by design, not subject to production testing

June 4,2021 PJMF190N60E1-REV.00 Page 2

 TYPICAL CHARACTERISTIC CURVES

50 60
VGS=10V TJ=-40℃
VGS=8V 50
40
ID-Drain Current (A)

ID-Drain Current (A)

40 TJ=25℃
30
VGS=6V
30
TJ=125℃
20
20

10
10

0 0
0 5 10 15 20 1 2 3 4 5 6 7 8
VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V)

Fig.1 Output Characteristics Fig.2 Transfer Characteristics

400 2.4
2.2
RDS(on)- On-Resistance (Normalized)

350
RDS(on)- On-Resistance (mΩ)

2.0
300
1.8 VGS=10V
250 1.6
200 1.4
VGS=10V 1.2
150
1.0
100
0.8
50 0.6
0 0.4
0 10 20 30 40 50 -75 -50 -25 0 25 50 75 100 125 150
ID- Drain Current (A) Temperature (℃)
Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction Temperature
10000 100
f=250kHz
ISD-Source-to-Drain Current (A)

1000
Ciss
10
Capacitance (pF)

100 TJ=125℃
TJ=25℃
Coss
1
10
Crss
TJ=-40℃

1 0.1
1 10 100 600 0.2 0.4 0.6 0.8 1 1.2
VDS- Drain-to-Source Voltage (V) VSD-Source-to-Drain Voltage(V)

Fig.5 Capacitance vs. Drain-Source Voltage Fig.6 Source-Drain Diode Forward Voltage

June 4,2021 PJMF190N60E1-REV.00 Page 3

 TYPICAL CHARACTERISTIC CURVES

BVDSS- Drain-to-Source Voltage (Normalized)

10 1.2
VDS=480V ID=250uA
VGS-Gate-to-Source Voltage (V)

ID=20A
8
1.1

6
1.0
4

0.9
2

0 0.8
0 7 14 21 28 35 42 -75 -50 -25 0 25 50 75 100 125 150
Qg (nC) Temperature (℃)

Fig.7 Gate-Charge Characteristics Fig.8 Breakdown Voltage Variation vs. Temperature

1.4 25
VGS(th)-Threshold Voltage (Normalized)

ID=250uA
1.2 20
ID-Drain Current (A)

1.0 15

0.8 10

0.6 5

0.4 0
-75 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150
Temperature (℃) Temperature (℃)

Fig.9 Threshold Voltage Variation with Temperature Fig.10 Drain Current vs. Case Temperature

100 10
SINGLE PULSE
RDS(ON) RӨJC=3.3°C/W
ZӨJC Normalized Transient Thermal

10 1
ID-Drain Current (A)

Impedance

1 0.1
Duty=0.5
Duty=0.2
Duty=0.1 PDM

Duty=0.05 PW
D= T

Duty=0.02
0.1 0.01 Duty=0.01 PW

SINGLE PULSE T
Single
RӨJC=3.3°C/W Notes:
TC=25°C Duty = PW / T
TJ = TC + PDM x ZӨJC x RӨJC
0.01 0.001
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS- Drain-to-Source Voltage (V) t, Pulse Width PW (sec)
Fig.11 Maximum Safe Operating Area Fig.12 Normalized Transient Thermal Impedance

June 4,2021 PJMF190N60E1-REV.00 Page 4

 TYPICAL CHARACTERISTIC CURVES

12

10

8
Eoss (uJ)

0
0 100 200 300 400 500 600
VDS- Drain-to-Source Voltage (V)

Fig.13 Typ. Coss Stored Energy Fig.8 Source-Drain Diode Forward Voltage

June 4,2021 PJMF190N60E1-REV.00 Page 5

Product and Packing Information

Part No. Package Type Packing Type Marking

PJMF190N60E1 ITO-220AB-F 50pcs / Tube 190N60E1

Packaging Information

ITO-220AB-F Dimension Unit: inch(mm)

Marking Diagram

PJ Y = Year Code
190N60E1 W = Week Code (A~Z)
YWLL x
LL = Lot Code (00~99)
x = Production Line Code

June 4,2021 PJMF190N60E1-REV.00 Page 6

 Disclaimer

● Reproducing and modifying information of the document is prohibited without permission from Panjit
International Inc..
● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime
without notification. Please refer to our website for the latest document.
● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product
including damages incidentally and consequentially occurred.
● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability
or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International
Inc. for any damages resulting from such improper use or sale.
● Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when
complaining.

June 4,2021 PJMF190N60E1-REV.00 Page 7