VS40200AT

40V/200A N-Channel Advanced Power MOSFET

V DS 40 V
Features
R DS(on),TYP@ VGS=10V 2.5 mΩ
 N-Channel，5V Logic Level Control
R DS(on),TYP@ VGS=4.5V 3.5 mΩ
 Enhancement mode
ID 200 A
 Very low on-resistance RDS(on) @ VGS=4.5V

 100% Avalanche test TO-220AB

 Pb-free lead plating; RoHS compliant

Tape and reel

Part ID Package Type Marking
information
VS40200AT TO-220AB 40200AT 50pcs/Tube

Maximum ratings, at T j=25°C, unless otherwise specified

Symbol Parameter Rating Unit

V(BR)DSS Drain-Source breakdown voltage 40 V

IS Diode continuous forward current TC =25°C 200 A

TC =25°C 200 A
ID Continuous drain current @VGS=-10V
TC =100°C 142 A

IDM Pulse drain current tested ① TC =25°C 800 A

EAS Avalanche energy, single pulsed ② 390 mJ

PD Maximum power dissipation TC =25°C 150 W

VGS Gate-Source voltage ±20 V

TSTG TJ Storage and operating temperature range -55 to 175 °C

Thermal Characteristics

Rθ JC Thermal Resistance-Junction to Case 1.0 °C/W

Rθ JA Thermal Resistance-Junction to Ambient 62.5 °C/W

Copyright Vanguard Semiconductor Co., Ltd

Rev B – FEB, 2018 www.vgsemi.com
 VS40200AT
40V/200A N-Channel Advanced Power MOSFET

Symbol Parameter Condition Min. Typ. Max. Unit

Static Electrical Characteristics @T j= 25°C (unless otherwise stated)

V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 -- -- V

Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA

IDSS
Zero Gate Voltage Drain Current(Tj=125℃) VDS=40V,VGS=0V -- -- 100 μA

IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA

VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.8 2.4 V

RDS(ON) Drain-Source On-State Resistance③ VGS=10V, ID=60A -- 2.5 4 mΩ

RDS(ON) Drain-Source On-State Resistance③ VGS=4.5V, ID=30A -- 3.5 6 mΩ

Dynamic Electrical Characteristics @ T j = 25°C (unless otherwise stated)

Ciss Input Capacitance 5600 6605 7600 pF

VDS=20V,VGS=0V,
Coss Output Capacitance 400 550 700 pF
f=1MHz
Reverse Transfer Capacitance 320 440 560 pF
Crss
Rg Gate Resistance f=1MHz -- 1.9 -- Ω

Qg Total Gate Charge -- 109 -- nC

VDS=20V,ID=30A,
Qgs Gate-Source Charge -- 30.5 -- nC
VGS=10V

Qgd Gate-Drain Charge -- 42 -- nC

Switching Characteristics

t d(on) Turn-on Delay Time -- 30 -- nS

VDD=20V,
Turn-on Rise Time -- 24 -- nS
tr ID=30A,

Turn-Off Delay Time RG=3Ω, -- 45.5 -- nS

t d(off)
VGS=10V
Turn-Off Fall Time -- 16.5 -- nS
tf
Source- Drain Diode Characteristics@ T j = 25°C (unless otherwise stated)

VSD Forward on voltage ISD=30A,VGS=0V -- 0.9 1.2 V

Reverse Recovery Time Tj=25℃,Isd=30A, -- 29 -- nS

t rr
VGS=0V
Qrr Reverse Recovery Charge 179 nC
di/dt=500A/μs
NOTE:
① Repetitive rating; pulse width limited by max. junction temperature.
② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 29A,VGS =10V. Part not recommended for use above this value
③ Pulse width ≤ 300μs; duty cycle≤ 2%.

Copyright Vanguard Semiconductor Co., Ltd

Rev B – FEB, 2018 www.vgsemi.com
 VS40200AT
40V/200A N-Channel Advanced Power MOSFET
Typical Characteristics

VGS(TH), Gate -Source Voltage (V)

ID, Drain-Source Current (A)

VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C)

Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs.Tj
ID, Drain-Source Current (A)

Normalized On Resistance

VGS, Gate -Source Voltage (V) Tj - Junction Temperature (°C)

Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj
ISD, Reverse Drain Current (A)

ID - Drain Current (A)

VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V)

Fig5. Typical Source-Drain Diode Forward Voltage Fig6. Maximum Safe Operating Area

Copyright Vanguard Semiconductor Co., Ltd

Rev B – FEB, 2018 www.vgsemi.com
 VS40200AT
40V/200A N-Channel Advanced Power MOSFET

Typical Characteristics

VGS, Gate-Source Voltage (V)

C, Capacitance (pF)

VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC)

Fig7. Typical Capacitance Vs.Drain-Source Voltage Fig8. Typical Gate Charge Vs.Gate-Source Voltage
ZθJC Normalized Transient
Thermal Resistance

Pulse Width (s)

Fig9. Normalized Maximum Transient Thermal Impedance

Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms

Copyright Vanguard Semiconductor Co., Ltd

Rev B – FEB, 2018 www.vgsemi.com
 VS40200AT
40V/200A N-Channel Advanced Power MOSFET

TO-220AB Package Outline Data

Dimensions (unit: mm)
Symbol
Min Typ Max
A 4.30 4.52 4.70
A1 1.15 1.30 1.40
A2 2.20 2.40 2.60
b 0.70 0.80 1.00
b2 1.17 1.32 1.50
c 0.45 0.50 0.61
D 15.30 15.65 15.90
D1 9.00 9.20 9.40
DEP 0.05 0.10 0.25
E 9.66 9.90 10.28
E1 - 8.70 -
E2 9.80 10.00 10.20
ΦP1 1.40 1.50 1.60
e 2.54 BSC
e1 5.08 BSC
H1 6.40 6.50 6.80
L 12.70 - 14.27
L1 - - 3.95
L2 2.40 2.50 2.60
ΦP 3.53 3.60 3.70
Q 2.70 2.80 2.90
θ1 5゜ 7゜ 9゜
θ2 1゜ 3゜ 5゜

Notes:
1. Refer to JEDEC TO-220 variation AB
2. Dimension "D" and "E" do NOT include mold flash. Mold flash shall not exceed 0.127mm per side.

Customer Service
Sales and Service:
sales@vgsemi.com
Vanguard Semiconductor CO., LTD
TEL: (86-755) -26902410
FAX: (86-755) -26907027
WEB: www.vgsemi.com

Copyright Vanguard Semiconductor Co., Ltd

Rev B – FEB, 2018 www.vgsemi.com