CGP30 and DGP30

New Product Vishay Semiconductors

formerly General Semiconductor

Clamper/Damper Glass
Passivated Rectifier Reverse Voltage 1400 to 1500V
Forward Current 3.0A
DO-201AD Features
• Specially designed for clamping circuits, horizontal
deflection systems and damper applications

ted
1.0 (25.4)* • Plastic package has Underwriters Laboratories

n
Min.

te
Flammability Classification 94V-0

Pa
• High temperature metallurgically bonded construction
0.210 (5.3)
0.190 (4.8) • Cavity-free glass passivated junction
Dia. • 3.0 ampere operation at TA=50°C with no thermal runaway
• Typical IR less than 0.1µA
0.375 (9.5) • Capable of meeting environmental standards of
0.285 (7.2) MIL-S-19500
® • High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

Mechanical Data
1.0 (25.4) Case: JEDEC DO-201AD, molded plastic over glass body
Min. Terminals: Plated axial leads, solderable per
0.052 (1.32)
Dimensions MIL-STD-750, Method 2026
0.048 (1.22)
Dia. in inches and Polarity: Color band denotes cathode end
(millimeters) Mounting Position: Any
Weight: 0.04 oz., 1.12 g
*Glass-plastic encapsulation technique is covered by Packaging codes/options:
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306 1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per ammo mag., 9K per box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol CGP30 DGP30 Unit
Maximum repetitive peak reverse voltage VRRM 1400 1500 V
Maximum RMS voltage VRMS 980 1050 V
Maximum DC blocking voltage VDC 1400 1500 V
Maximum average forward rectified current IF(AV) 3.0 A
0.375” (9.5mm) lead length at TA = 50°C
Peak forward surge current 8.3ms single half sine wave IFSM 100 A
superimposed on rated load (JEDEC Method) at TA = 50°C
Maximum full load reverse current full cycle IR(AV) 200 µA
average 0.375” (9.5mm) lead length at TA = 70°C
Typical thermal resistance (Note 1) RΘJA 20 °C/W
Operating junction and storage temperature range TJ, TSTG –65 to +175 °C

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter Symbol CGP30 DGP30 Unit

Maximum instantaneous forward voltage at 3.0A VF 1.2 V
Maximum DC reverse current TA = 25°C IR 5.0 µA
at rated DC blocking voltage TA = 100°C 100
Maximum reverse recovery time at IF = 0.5A, IR = 50mA trr 15 20 µs
Maximum reverse recovery time typical trr 1.0 µs
at IF=0.5A, IR=1.0A, Irr=0.25A maximum 2.0
Typical junction capacitance at 4.0V, 1MHz CJ 40 pF

Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, with leads attached to heat sink

Document Number 88569 www.vishay.com

03-Jan-03 1
CGP30 and DGP30
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current Fig. 2 – Maximum Non-Repetitive
Derating Curve Peak Forward Surge Current
4.0 200
TA = 50°C
Average Forward Rectified Current (A)

60 HZ
Resistive or 8.3ms Single Half Sine-Wave

Peak Forward Surge Current (A)

Inductive Load (JEDEC Method)
3.0 100

2.0

1.0

0.375" (9.5mm) Lead Length

0 10
0 25 50 75 100 125 150 175 1 10 100

Ambient Temperature (°C) Number of Cycles at 60 HZ

Fig. 3 – Typical Instantaneous Fig. 4 – Typical Reverse

Forward Characteristics Characteristics
30 10
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)

10
TJ = 100°C

1.0

1
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
0.1

TJ = 25°C

0.01 0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100
Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)

Fig. 5 – Typical Junction

Capacitance
100
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
Junction Capacitance (pF)

10
1 10 100
Reverse Voltage (V)

www.vishay.com Document Number 88569

2 03-Jan-03