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1. EL ECT R ONICS SEM ICONDU CT OR 1

P H YS I C S

2. LOGIC GATE 46
 Physics

E L E C T R ON I C S
SEMICONDUCTOR

1. INTRODUCTION
Electronics - Electron's dynamics
The word "electronics' is derived from electron + dynamics which means the study of the behavior of an electron
under different conditions of externally applied fields.
That field of science which deals with electron devices and their utilization. "Here an electronic device is "a
device in which conduction takes place by the movement of electron - through a vacuum, a gas, or a semi-
conductor. Some familiar devices are
(1) Rectifier (2) Amplifier (3) Oscillator etc.
Important point :
 Main application of electronics is computer which is used in every field.
 All electronics equipment required D.C. supply for operation (not A.C. supply)
Classification of Electronics (According to Technology)

Vacuum tube electronics Semiconductor electronics

Both technology based on behavior of electron
Electron

Bonded electron Free electron

(1) Revolve around nucleus and bounded by (1) Freely move in substance, there is almost
attraction force of nucleus. no attraction of nucleus.
(2) Can't help in flow of current (2) Help in flow of current.
(3) All electrons have different properties. (3) All electrons have same properties.
2. ENERGY BANDS IN SOLIDS
Based on - Pauli's exclusion principle
In an Isolated atom electrons present in energy
level but in solid atoms they are not isolated
there is interaction among each other due to
this energy level splited into different energy level
Quantity of these different energy level depends
on quantity of interacting atom. Splitting of sharp
and closely com pact energy level results
energy band. This is de create in nature. Order
of energy levels in a band is 1023 and their energy
difference = 10 –23 eV.
2.1 SOME IMPORTANT DEFINITIONS
(1) Energy Band - Range of energy possessed by electron in a solid is known as energy band.
(2) Valence Band (VB) - Range of energies possessed by valence electron is known as valence band,
(a) Have bonded electron
(b) No flow of current due to such electron
(c) Always fulfill by electron
(3) Conduction Band (CB)
Range of energies possessed by free electron is known as conduction band.
(a) Also called empty band of minimum energy.
(b) In general Partialy filled by electron.
(c) If Conduction Band is empty, then conduction is not possible.
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(4) Forbidden Energy gap (FEG) (Eg) - [ Eg. = (C B) Min - (V B) Max]
Energy gap between conduction band and valence band, where no free electrons exist.
Special Points :
 No free electron present in F.E.G. Max
Conduction Band
 Width of F.E.G. depends upon the nature of substance. Min
Band
 Width is more, then valence electrons are strongly attached with nucleus Energy Forbidden Energy gap
Max
 Width of F.E.G. is represented in eV. Valence Band
Min
 As temp  F.E.G.  (Very slightly)
According to Energy Band Theory: Explanation of Conductor, Semiconductor & Insulator.

CONDUCTOR :
In some solids conduction band and valence band are overlapping there is no any band gap, between them
it means  Eg =,0. Due to this a large number of electrons available for electrical conduction and therefore
its resistivity is low ( = 10–2 – 10–8 M) and conductivity is high ( =102 - 108 mho/m). Such material called
conductor. For example gold, silver, copper etc.
INSULATOR :
In some solids energy gap is large (Eg > 3 eV). So in conduction band there are no electrons and so no
electrical conduction is possible. Here energy gap is so large that electrons cannot be easily excited from
the valence band to conduction band by any external energy (electrical, thermal or optical). Such material
called as "insulator"; Its  = 108 –m &  = 10–8 (-m)–1 = 10–8 Sm –1
SEMICONDUCTOR :
In some solid a finite but small bandgap (Eg < 3eV) exists. Due to this small band gap some electrons can
be thermally excited to "Conduction band". These thermally excited electron can move in conduction band
and can conduct current their resistivity and conductivity both are in medium range. its  =105 – 100 -m
&  = 10–5 – 100 Sm –1
Example of Semiconductor Material
Elemental semiconductor = Si and Ge
Compound Semiconductor,
Inorganic = CdS, GaAs, CdSe, InP etc.
Organic = anthracene, doped phalocyanines.
Organic polymers = Poly pyrrole, Poly aniline, polythiophene etc.

3. PROPERTIES OF SEMICONDUCTORS
 Negative temperature coefficient (a), T , R  ,  I
 Covalent Bond
 Crystalline structure [Face centred cubic (FCC)]
 By adding small impurity conduction properties change.
 Place in Periodic Table  IV group
 Forbidden Energy gap (0.1 to 3 eV)
 There are many semiconductor but few of them have practical application in electronics like
Ge & Si Ge  32 2, 8, 18, 4
Si  14 2, 8, 4
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 Charge Carriers
(i) Electron (ii) Hole
4. CONCEPT OF "HOLES" IN SEMICONDUCTORS
Due to external energy (temp. or radiation) when electron goes from valence band to conduction band
(i.e. bonded electrons becomes free), vacancy of free e– create in VB.
Which have same charge as electron but positive, this positively charged
vacancy which move randomly. In semiconductor solid it is shown in
diagram called as hole.
This positively charged randomly moved electron vacancy called as"hole"
1. Missing electron in VB.
2. It acts as +ve charge.
3. Effective mass is more than electron.
4. Mobility of hole is less than electron
Note: hole acts as virtual charge, although there is no physical charge on it.
HOLE CURRENT
At room temp, due to breaking of some Covalent Bonds some free electrons are produced. By applying electric
field current flow due to free electrons. At same time hole current also flow in semiconductor.
5. EFFECTING FACTOR
I. EFFECT OF TEMPERATURE :

1. At absolute zero kelvin temp. : At this temp Covalent

Bonds are very strong and there are no free electron and
semiconductor behaves as perfect insulator

2. Above absolute temp. : When temp increases some

of Covalent Bonds are break due to thermal Energy
supplied. These free electron can constitute a tiny
electric current if potential difference is applied accross
semiconductor crystal. This shows that R. by T
so (-ve )

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Important point
 No. of Electrons reaching from VB to CB
 Eg

n = A T3/2 2 kT
e
k = Boltzmann Const = 1.38 x 10–23 J/k
T = Absolute Temp.
A = Simple constant
 For Silicon solid at room temperature out of approximate 1012 silicon atoms only one electron goes from VB to CB.
 For Germanium solid at room temperature out of approximate 109 germanium atoms only one electron goes
from VB to CB.
 In semiconductors, Ohms law is obeyed only for low electric field (less than 106 Vm –1). Above this field, the
current becomes almost independent of applied field.
ii. Effect of impurity in semiconductor
Doping is a method of addition of "desirable" impurity atoms to pure semiconductor to increase conductivity
of semiconductor.
Important point
  The concentration of dopant atoms be very low, doping ratio is vary from
impure: pure :: 1 : 106 to 1 : 1010 In general it is 1 : 108
  There are two main method of doping.
(i) Alloy method (ii) Diffusion method (The best)
  The size of dopant atom (impurity) should be almost the same as that of crystal atom. So that crystalline
structure of solid remain unchanged.

6. C L AS S I F IC AT I O N O F S E M I C O N D U C T O R

ne = nh = ni ne >> nh nh >> ne

N TYPE SEMICONDUCTOR:
When a pure semicon-
ductor (Si or Ge) is
doped by pentavalent
impurity (P, As, Sb, Bi)
then four electrons out of
the five valence electrons
of impurity take part, in
covalent bonding, with
four silicon atoms sur-
rounding it and the fifth
electron is set free.
These impurity atoms
which donate free e- for
conduction are called Donor impurity (ND). Here free e-increases very much so it is called as "N" type semiconductor
here impurity ions are known as "Immobile Donor positive Ion". "Free e–" called as "majority" charge carries and "holes"
called as "minority" charge carriers.
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P TYPE SEMICONDUCTOR :
When a pure semiconductor
(Si or Ge) is doped by trivalent
impurity (B, AI, In, Ga) then
outer most three electrons of the
valence band of impurity take
part, in covalent bonding with
four silicon atoms surrounding
it and except one electron from
semiconductor and make hole
in sem iconductor. These
impurity atoms which except
bonded e- from valance band are
called as Acceptor impurity (NA). Here holes increases very much so it is called as "P" type semiconductor
here impurity ions known as "Immobile Acceptor negative Ion". Free e– called as minority charge carriers and
holes called as majority charge carriers.

Intrinstic semiconductor P-type (Trivalent impurity) N-type (Pentavalent Impurity)

Mass action Law : In any semiconductor due to thermal effect, generation of free e– and hole take place.
A part from the process of generation, a process of recombination also occurs simultaneously. In which free
e– further recombine with hole. At equilibrium rate of generation of charge carries equal to rate of recombination
of charge carrier.

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Important point
(i) The recombination occurs due to e- colliding with a hole, larger value of ne or nh, higher is the probability~
of their recombination.
(ii) Under thermal equilibrium, the product of the concentration 'ne' of free electrons & the concentration nh of holes
is a constant, independent of the amount of doping by acceptor & donor impurities.
Mathematically ne x n h = n i 2 Mass action law
EAXMPLE BASED ON SEMICONDUCTOR
Ex.1 The energy of a photon of sodium light ( = 589 nm) equals the band gap of a semiconducting material.
(a) Find the minimum energy E required to create a hole-electron pair.
(b) Find the value of E/kT at a temperature of 300 K

hc hc
Sol. (a) E = h = (in J) = (in eV),
 e

12400
So E = Here E is in eV and  is in Å


12400
 = 589 nm = 5890 Å E = = 2.1 eV
5890

E 2.1 (eV)
(b) = ,
kT 1.38  10 23  300(J)

E 2.1 1.6  1019 J

=  81
kT 1.38  1023  300(J)

Ex.2 A P type semiconductor has acceptor level 57 meV above the valence band What is maximum wavelength
of light required to create a hole ?

hc hc 6.62  10 34  3  10 8
Sol. E = (in J) = (in eV ) =  217100 Å
 e 57  10  3  1.6  10 19

Ex.3 A silicon specimen is made into a p-type semiconductor by doping on an average one indium atom per 5 x 107
silicon atoms. If the number density of atoms in the silicon specimen is 5 x 1028 atoms/m 3 ; find the number of
acceptor atoms in silicon per cubic centimeter.
Sol. The doping of one indium atom in silicon semiconductor will produce one acceptor atom in p-type
semiconductor. Since one indium atom has been dopped per 5 × 10 7 silicon atoms, so number density
of acceptor atoms in silicon

5  10 28
 10 21 atoms/m 3 = 1015 atoms/cm 3
5  10 7

Ex.4 The concentration of hole - electron pairs in pure silicon at T = 300 K is 7 x 1015 per cubic meter. Antimony
is doped into silicon in a proportion of 1 atom in 107 Si atoms. Assuming that half of the impurity atoms contribute
electron In the conduction band, calculate the factor by which the number of charge carriers in creases due
to doping the number of silicon atoms per cubic metre is 5 × 1028.
Sol. In pure semiconductor
electron-hole pair = 7 x 1015
ntotal initial = nh + ne = 14 × 1015
after doping :
Donor impurity,

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5  10 28
ND   5  10 21
10 7
According to question

ND
ne   2.5  10 21
2
so nfinal = nh + ne
Here ne > > nh
so nfinal  ne  2.5 × 1021

nfinal  ninitial 2.5  10 21

Factor =   1.8  105
ninitial 14  1015
7. RESISTIVITY AND CONDUCTIVITY OF SEMICONDUCTOR
Conduction in conductor
a. Relation between current (I)
& drift velocity (VD)
I = ne A Vd
n = No. of electron in unit volume
J = neVd
A = cross sectional Area
J = ne E
Vd = Drift velocity of electron = E

I
J = E J= Amp/m 2 current density
A
 = ne =1/  = conductivity  = Resistivity

Vd
Mobility    = Mobility
E
Conduction in Semiconductor -
Intrinsic semiconductor p-type N-type
ne = n h nh >> ne ne >> nh
J = ne [ve + vh] J  enhvh J  e ne ve

1 1 1
  en[ e  h ]   e nh h    e ne  e
  
Important point
 Due to impurity the conductivity increases approx 103 times
  sc   e  h  n e e e  nh e h

8. P-N JUNCTION
8.1 DESCRIPTION OF P-N JUNCTION WITHOUT APPLIED VOLTAGE OR BIAS :
Given diagram shows a P-N junction immediately after it is formed.

P region has mobile majority holes and immobile negatively charged impurity ions.

N region has mobile majority free electrons and immobile positively charged impurity ions.

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Due to concentration difference diffusion of holes starts from P to N side and diffusion of e– s starts N to P side.

Due to this a layer of only positive (in N side) and negative (in P-side) started to form which generate an
electric field (N to P side) which oppose diffusion process, during diffusion magnitude of electric field increases
due to this diffusion it gradually decreased and ultimately stopped.

The layer of immobile positive and negative ions, which have no any free electrons and holes called as depletion
layer as shown in diagram.
Important Point:
 Width of depletion layer  10–6 m
(a) As doping increases depletion layer decreases
(b) As temperature increased depletion width decreases.
(c) P-N Jn  unohmic
 Potential Barrier

Ge  0.3 V Si  0.7 V

 Electric field is produced due to potential barrier

E = V/d = 0.5 / 10 –6  E  105 V/m
This field prevents the respective majority carrier from crossing barrier region
Diffusion & Drift Current
(1) Diffusion current - P to N side (2) Drift current - N to P side
If there is no biasing diffusion current = drift current So total current is zero

Behaviour of P-N Junction with an external voltage applied or Bias

(i) Forward Bias : If we apply a, voltage 'V" such that P-side is positive and N-side is
negative as shown in diagram.
The applied voltage is opposite to the junction barrier potential. Due to this effective potential barrier decreases
junction width also decreases, so more majority carrier. will be allowed to flow across junction. It means the
current flow in principally due to majority charge carriers and is large (mA) called as forward Bias.
(ii) Reverse Bias : If we apply a voltage "V" such that P-side is negative and N-side is positive as shown in diagram.
The applied voltage is same side of to the junction barrier potential. Due to this effective potential barrier increased
junction width also increased, so no majority carriers will be allowed to flow across junction. Only minority carriers
will drifted. It means the current flow in principally due to minority charge carriers and is very small (A) called as
reversed high Bias.

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Important Points
 In reverse bias, the current is very small and nearly constant with bias (termed as reverse saturation current).
However interesting behaviors results in some special cases if the reverse bias is increased further beyond
a certain limit above particular high voltage breakdown of depletion layer started.
 This breakdown due to covalent breaking of deption layer termed as Zener breakdown (After the discover, C.
Zener) and such a diode is Zener diode.
 Zener diodes with different breakdown voltages (for regulations of different voltages) can obtained by changing
the doping concentration of its p-and n-sides.
 There is another variant of Zener like breakdown if the doping concentrations of p-and n-sides are not as high
as for the case of zener diode. Such diodes will have relatively wider junction widths. At very high reverse
bias, already existing electrons and holes are accelerated in the junction field and may undergo many collisions
with the atoms in the crystal.
 These new electron-hole pairs are created by impact ionisation also get accelerated in the junction field and
collide further with the crystal atoms giving an increasing number of new electrons and holes. These bias beyond
a certain critical value. This phenomenon is known as Avalanche breakdown and the device is referred to as
Avelanche diode.
Zener Break down Avelanche Break down
Where covalent bonds of depletion layer, its Here covalent bonds of depletion
layers are bro
self break, due to high electric field of very ken by collision of "Minorities" which
aquire high
high Reverse bias voltage. kinetic energy from high electric field
of very-very
high reverse bias voltage.
This phenomena predominant This phenomena predominant
(1) At lower voltage after "break down" (1) At high voltage after breakdown
(2) P - N Jn. having "High doping"; (2) P - N Jn. having "Low doping"
(3) P - N Jn. having thin depletion layer (3) P - N Jn. having thick depletion
layers
Here P - N not damage permanently Here P - N damage permanently due
to'
"In D.C voltage stablizer zener phenomena "Heating effect" due to abruptly incre-
ment
of it is sused". minorities during repetitive collisions.

DIFFERENCE BETWEEN FORWARD BIAS & REVERSE BIAS

Forward Bias Reverse Bias

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Important point
1. Potential Barrier reduces 1. Potential Barrier increases.
2. Width of depletion layer decrease 2. Width of depletion layer increases.
3. P-N JN provide very small resistance 3. P-N JN provide high resistance
4. Forward current flow in circuit 4. Very small current flow.
5. Order of forward current in mili amp. 5. Order of current micro amp.(Ge) or Nano amp.(Si)
6. Mainly flow majority current. 6. Mainly minority current.
7. Forward characteristic curves. 7. Reverse characteristic curve
8. Forward resistance 8. Reverse resistance

Vf VB
Rf   100 RB   10 6 
If IB
9. Knee or cut in voltage 9. Breakdown voltage
Ge  0.3 V Ge  25 V
Si  0.7 V Si  35 V
10. Forward current equation 10. Reverse current equation
 qvkt  qv
kt
 qvkt 
I I0 e 1 e 1 I I0 e 1
   
qv qv

I  I0 e kt (exp. increment) e KT  1
I  I0

Characteristic curve of P-N junction diode :

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11.

For ideal diode

On switch

Off switch

MODEL

Approximate model

Simplified model

Ideal model

RR RR
S.P.  103 : 1 for Ge  104 :1 for Si
RF RF

9. Application of diode

9.1 RECTIFIER  Which converts AC into DC

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(1) Half wave rectifier :

(i) During positive half cycle

D F.B.  On switch output due to diode D
(ii) During Negative half cycle
D R.B off switch  No output

(2) Full wave rectifier :

(i) During +ve half cycle

D1 F.B. On switch
 ouput due to diode D1
D2 R.B. Off switch

(i) During -ve half cycle

D1 R.B. Off switch
 ouput due to diode D2
D2 F.B. On switch
PIV = Vm = 2Vin

(3) Bridge Rectifier :

(i) During +ve half cycle

D2 & D4 F.B.  on switch
 ouput due to diode D2 & D 4

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D1 & D3 R.B.  off switch

(ii) During -ve half cycle

D1 & D3 F.B.  on switch
 ouput due to diode D1 & D3
D2 & D4 R.B.  off switch

9.2 RIPPLE & RIPPLE FACTOR :

In the output of rectifier some A.C. components are present. They are called ripple & there measurement is
given by a factor so it is called ripple factor . for good rectifier ripple factor must be very low.
Total output current

Irms  I2ac  I2 dc Iac  rms value of AC component

Iac
Ripple factor f = I
dc

2
I 
r   rms   1
 Idc 
I0 I0
(i) For Half wave rectifier Irms  , Idc  r = 1.21
2 

I0 2I0
(ii) For full wave or bridge wave rectifier Irms  , Idc  r = 0.48
2 

9.3 RECTIFIER EFFICIENCY

Pdc I2 dc R L
  2
Pac I rms (R F  R L )

Half wave rectifier Full wave rectifier or bridge wave rectifier

0.406 Rf 0.812 Rf
 if R  1 
R if RL
 1
R L 1 f
1 f
RL RL

  40.6%   81.2%
special note If Rf = RL If Rf = RL
  20.3%   40.6%

Note; In bridge full wave rectifier Rf is two times of resistance of P-N Jn FB

9.4 FORM FACTOR
Irms Erms
F or
Idc Edc

F for full wave rectifier
2 2

F for half wave rectifier
2

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9.5 RIPPLE FREQUENCY
(i) For half wave rectifier

(ii) For full wave rectifier

9.6 Pulse : It is counting, no unit

(i) For half wave rectifier

(ii) For full wave rectifier

Average current for H.W.R. RMS current for H.W.R

 1 T 2 1 T
I  Idt I   I 2 dt
T 0 T 0

 1 T/2 T 1 T/2 1 T 2I 20 sin 2 tdt

I  Idt   Idt   I0 sin tdt  0
T 0 T / 2 T 0
=
T 
0 2

T/2
I0   cos t  I0  T  I20  T / 2
   cos   cos 0  (1  cos 2t)dt  0 
T    0 2T  0

T  2 


 I I20  T  I20 I0
I 0   0  Irms  
 2T  2  4 2

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COMPARISON BETWEEN AVERAGE RECTIFIERS
Full wave
Half - wave Centre- tap Bridge
Number of diodes 1 2 4
Transformer necessary No Yes No
Peak secondary voltage Vm Vm Vm
Peak load current, Im Vin/(rd+RL) Vin /(rd+RL) Vin/(2rd+RL)

RMS current, Irms Im/2 Im/ 2 Im/ 2

DC current, Idc Im/ 2Im/ 2Im/

Ripple factor, Idc 1.21 0.482 0.482
Rectification efficiency (max) 4 0.6% 81.2% 81.2%
Lowest ripple frequency, fr fi 2fi 2fi

Filter circuit : To reduce AC components

1. Capacitor Filter :

2. L- C Filter :

3. - Filter (Best Filter)

Zener Diode - C Zener

A properly doped crystel diode which has sharp Break down voltage is known as Zener diode.

It is always connected R.B. manner.

Used as a voltage regulation

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In FB. it works as a simple diode.

SOME SPECIAL DIODES

 Photodiode : A junction diode made from "light or photo sensitive semiconductor" is called a "photo diode" its

symbol When light of energy "h" falls on the photodiode (Here h > energy gap) more electrons move from
valence band, to conduction band, due to this current in circuit of photodiode in "Reverse bias", increases. As
light intensity is increased, the current goes on increases so photo diode is used, "to detect light intensity" for
example it is used in 'Video camera" .
 Light emitting diode (L.E.D) : When a junction diode is "forward biased" energy is released at junction in the
form of light due to recombination of electrons and holes. In case of Si or Ge diodes, the energy released is in
infra-red region.
In the junction diode made of GaAs, InP etc energy is released in visible region such a junction diode is called

"light emitting diode" (LED) Its symbol

 Solar cell : Solar cell is a device for converting solar energy into electrical. A junction diode in which one
of the P or N sections is made very thin (So that the light energy falling on diode is not greatly asorbed before
reaching the junction) can be used to convert light energy into electric energy such diode called as solar cell.

Its symbol

(i) It is operated into photo voltaic mode i.e., generation of voltage due to the bombardment of optical photon.
(ii) No external bias is applied.
(iii) Active junction area is kept large, because we are interested in more power. Materials most commanly used for
solar cell is Si, As, CdS, CdTe, CdSe, etc.
 Variable capacitor (Variactor) : P - N junction diode can be used as a "Capacitor" here depletion layer acts as
"dielectric material" and remaining "P" and "N" part acts as metal plates.

= , its symbol

Diode laser: - It is interesting form of LED in which' special construction helps to produce stimulated radiation as
in laser.

Example based on semi conductor

Ex.1 What will be conductance of pure silicon crystal at 300K Temp. If electron hole pairs per cm 3 is 1.072 × 1010 at
this Temp; n = 1350 cm 2/volt sec & P = 480 cm 2 / volt sec

Sol.   ni e e  ni eh

= ni e( e  h )  3.14  10 6 mho / cm

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Ex.2 A potential barrier of 0.5 V exists across a p-n junction (i) If the depletion region is 5 x 10–7 m wide. What is the
intensity of the electric field in this region? (ii) An electron with speed 5 x 105 m/s approaches the p-n junction
from the n-side with what speed will it enter the p-side.

V 0.5V
Sol. (i) E  = Depletion layer = L
L 5  10 7
V
E=
V L
E = 106
m P N
(ii) Work energy theorem

1 1
MVi2  eV  MVf2
2 2

MVi2  2eV
Vf  = 2.7 ×105 m/s
M
Ex.3 Figure shows a diode connected to an external resistance and an e.m.f. Assuming that the barrier potential
developed in diode is 0.5 V1 obtain the value of current in the circuit in milliampere.
Sol. Here, E = 45 V1R = 100 , voltage drop across p-n
junction, = 0.5 V. Effective voltage in the circuit,
V = 4.5 – 0.5 = 4.0 V
current in the circuit,

V 4.0
I   0.04A = 0.04 × 1000 mA = 40mA
R 100
10. TRANSISTOR
INTRODUCTION
I. Transistor is a three terminal device which is formed when a thin layer of one type of extrinsic semiconductor
(P or N type is sandwitched between two thick layers of other two type extrinsic semiconductor. Each transistor
have three terminals which are :
(i) Emitter (E) (ii) Base (B) (iii) Collector (C)
(i) Emitter :- It is the left most part of the transistor. It emit the majority carrier towards base. It is highly
doped and medium in size.
(ii) Base :- It is the middle part of transistor which is sandwitched by emitter (E) and collector (C). It is lightly
doped and very thin in size.
(iii) Collector :- It is right part of the transistor which collect the majority carrier which is emitted by emitter.
It have large size and moderately doped.
There are two Semiconductor Junction :
(i) The junction between emitter and base is known as emitter-base junction (JEB)
(ii) The junction between base & collector is known as base-collector junction (JCB)
Types of transistor :- Transistor are two types
1. N-P-N Transistor :
If a thin layer of p-type semiconductor is sandwitched between two thick layer of n-type semiconductor is
known as NPN transistor.

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2. P-N-P Transistor : If a thin layer of n-type of semiconductor is sandwitched between two thick layer of
p-type semiconductor is known as PNP transistor. 100

4.5V

10.1 WORKING OF TRANSISTOR :

(a) Working of NPN Transistor :- The
emitter Base junction is forward
biased and collector base junction is
reversed biased of n-p-n transistor in
circuit (A) and symbolic representa-
tion is shown in Figure.
W hen em itter base junction is
forward biased, electrons (majority
carriers) in emitter are repelled
towards base. The barrier of emitter base junction is reduced and the electron enter the base. About 5% of
these electron recombine with hole in base region result in small current (Ib). The remaining electron (  95%)
enter the collector region because they are attracted towards the positive terminal of battery. For each electron
entering the positive terminal of the battery connected with collector base junction an electron from negative
terminal, of the battery connected with emitter base junction enters the region. The emitter current (Ie) is more
than the collector (Ic). The base current is the difference between Ie and Ic and proportional to the number
of electron hole combination in the base.Ie = Ib + Ic
(b) Working of PNP Transistor
When emitter-base junction is
forward biased holes (majority
ca rr ie rs) in the e m itter a re
repelled towards the base and
diffuse through the emitter base
junction. The barrier potential of
emitter-base junction decreases
and hole enter the n-region (i.e.
base). A small number of holes
(  5%) combine with electron of n-region resulting small current (Ib ). The remaining hole (  95%) enter into
the collector region because they are attracted towards negative terminal of the battery connect with the
collector-base junction. These holes constitute the collector current (Ic).

As one hole reaches the collector, it is neutralized by the battery. As soon as one electron and a hole neutralized
in collector a covalent bond is broken in emitter region. The electron hole pair is produced. The released electron
enter the positive terminal of battery and hole more towards the collector.

10.2 CHARACTERISTIC OF TRANSISTOR :

To study about the characteristic of transistor we have to make a circuit [i.e. JEB  Forward bias and JCB 
Reverse bias] we need four terminal. But the transistor have three terminals. By keeping one of the terminal of
transistor is common in input and output both. So the transistor is connected in three ways in circuit.

(i) Common Base connector (CB) (ii) Common Emitter (CE) (iii) Common Collector (CC)
In these three CE is widely used and CC is rarely used.

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Common Emitter characteristics of a transistor :- CE characteristic are two types:
1. Input characteristics :- The variation of base current (Ib) (input) with base emitter voltage (VEB) at constant-
emitter voltage (VCE) is called input characteristics.

(i) Keep the collector-emitter voltage (VCE) constant (say VCE) = 1 V)

(ii) Now change the emitter base voltage by R1 and note the corresponding value of base current (Ib)
(iii) Plot the graph between VEB and Ib.
(iv) A set of such curve can be plotted at different (VCE = 2V)

(2) Output characteristic :- The variation of collector current Ic (output)

with collector-emitter voltage (VCE) at constant base current (Ib)
is called output characteristics.
(i) Keep the base current (Ib) constant (say Ib = 10A)
(ii) Now change the collector-emitter voltage (V CE) using variable
resistance R 2 and note the corresponding values of collectors
current (IC).
(iii) Plot the graph between (VCE v/s Ic)
(iv) A set of such curve can be plotted at different fixed values of base
current (say 0, 20A, 30A etc.)
Important point :
 Comparative study of E, B, C
Type of Terminal Size Doping
E Medium High
B Smallest Low
C Largest Medium
 The collector region is made physically larger than the emitter. Because collector has to dissipate much
greater power.
 Transistor have two P-N Junction J EB and J CB. On the basis of junction condition transistor work in four
region.

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EB Jn. CB Jn. Region of working
(i) Forward Bias (FB) Reverse Bias (RB) Active E C
n p n
(ii) (FB) (FB) Inverse Active
(iii) (RB) (RB) Cut off
(iv) (FB) (FB) Saturation JEB J CB

 Transistors allmost work in active region in electronic devices & transistor works as an amplifier in Active region
only.
 Transistor i.e. It is a short form of two words 'Transfer resistors". Signal is introduced at low resistance circuit
and out put is taken at high resistance circuit.
 Base is lightly doped. Otherwise the most of the charge carrier from the emitter recombine in base region
and not reaches at collector.
 Transistor is a current operated device i.e. the action of transistor is controlled by the motion of charge
carriers. i.e. current
Input characteristic :
 In put characteristics is just similar to the forward characteristic of junction diode.
 For fixed value of VBE, the base current Ib is decreases when we increase the VCE'

 VBE 
 The ratio of change in VBE to the small change in Ib is known as the, input resistance (r1) =  I  it is

 b 
inverse of slope of input characteristics.
Output characteristic :
 For given values of Ib, collector increase with VCE in beginning but at high value of VCE collector current becomes
constant.

 VCE 
 Out put resistance (r0) =  I 
 c 

10.3 TRANSISTOR AS AN AMPLIFIER :

The process to increasing the amplitude of input signal without distorting its wave shape and without changing
frequency is known as amplification. .
A device which increase the amplitude of the input signal is called.
Amplifier are three:
(i) Common Emitter (CE) amplifier
(ii) Common Base (CB) amplifier
(iii) Common Collector (CC) amplifier
The device by which the amplitude of the signal at the output is mode greater than that if input signal is called
amplifier.

Some of the important parameter of amplifier

1. Voltage gain (voltage amplification factor)

V0 Output voltage
Av  
Vin Input voltage

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2. Current gain (current amplification factor) 3. Power gain (Ap)

I0 Output power
Ai  Ap 
Iin Input power

C.E. AMPLIFIER :

Comparative study of transistor configuration

1. Common base (CB) 2. Common emitter (CE) 3.Common collector (CC)

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Important point:
 In transistor charge carriers moves from emitter to collector. Emitter send the charge carrier and collector
collects them this happen only when emitter-base junction is forward bias and collector base junction is reverse
bias (base of amplifier)
 In transistor reverse bias is high as compared to forward bias so that the charge carrier move from emitter
to base exert a large attractive. force to enter in collector region so the base currant is very less.
 CE configuration is widely used because it have large voltage and power gain as compared to other amplifier.
 In amplifier negative feed back is used to stabilized the gain.
 
 CC is used for impedance matching for connecting two transistor in caused.
Example based on transistor
Ex. In a transistor, the value of  is 50. Calculate the value of .
Sol. Here  = 50


Using   , we get
1 


50 = or 50 – 50  = 
1 

50
or 51 = 50    = = 0.98
51
Ex. Calculate the emitter current for which Ib = 20 A,  = 100
Sol. Here  = 100, Ib = 20 A

Ic

Ib  Ic = Ib = 100 × 20 = 2000 A

Using Ie = Ib + Ic , we get
Ie = 20 + 2000 = 2020 A = 2.02 × 10–3 A
= 2.02 mA

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Ex. For a common emitter amplifier, current gain = 50. If the emitter current is 6.6 mA, calculate the collector
and base current. Also calculate current gain, when emitter is working as common base amplifier.
Sol. Here,  = 50; Ie = 6.6 mA

Ic
Step-I since   I
b

Ic = Ib = 50Ib ........(1)

Step-II Now Ie = Ic + Ib
6.6 = 50 Ib + Ib = 51Ib (using equation 1)

6. 6
or Ib   0.129mA
51

6. 6
Hence I c  50   6.47mA
51

  50
Stip-III   or  = = 0.98
1  1  51
Ex. Transistor with  = 75 is connected to common-base configuration. What will be the maximum collector current
for an emitter current of 5mA ?
Sol. Here  = 75, Ie = 5mA

 
Step-I Using   , we get 75  or 75 – 75  = 
1  1 
or 75  = 75

75
or 
76

Ic 75
Step-II  I c  I e   5  4.93 A
Ie  76
Ex. The base current is 100 A and collector current is 3mA.
(a) Calculate the values of , Ie and 
(b) A change of 20 A in the base current produces a change of 0.5 mA is the collector current.
Calculate  ac.
Sol. Here Ib = 100A = 0.100 mA
Ic = 3mA

Ic 3
(a) Using   I , we get    30
b 0 . 100


Using  , wet get
1 


30   30  30  
1 

30
or 31 = 30     0.97
31

Ic
Using  , we get
Ie
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I c 3  31
Ie    3.1 mA
 30

(b) Here Ib  20A  0.02mA

Ic  0.50mA

I c 0. 5
  ac = I  0.02  25
b

Ex. In npn transistor circuit, the collector current is 10 mA. If 95% of the electrons emitted reach the collector,
what is the base current ?
Sol. Setp-I Ic = 65% Ie = 0.95Ie

Ic 10
 Ie   ( Ic = 10mA)
0.95 0.95
=10.53mA
Setp-II Now Ie = Ic + Ib
 Ib = Ie – Ic
= 10.53 – 10 = 0.53mA
Ex. In an NPN transistor 1010 electrons enter the emitter in 10–6 s and 2% electrons recombine with holes in base,
then current gain  and  are :

Ne 1010  1.6  10 19

Sol. Emitter current IE = = 1.6mA
t 10  6

2
Base current IB =  1.6mA = 0.032 mA
100
but IE = IC + IB
 IC = IE – IB = 1.6 – 0.032 = 1.568 mA

I C 1.568 I C 1.568
    0.98     49
IE 1.6 IB 0.032

Feedback :- Feedback is of two type :

1. Positive feedback :- When input and output are in the same phase then positive feedback is there. It is
used in oscillators.
2. Negative feedback :- If input and output are out of phase and some part of that is fedback to input is known
as negative feedback. It is used to get constant gain amplifier.
10.4 TRANSISTOR IN AN OSCILLATOR CIRCUIT :
Oscillator is device which delivers a.c. output
wave form of desired frequency from d.c. power
even without input signal excitation.
The electric oscillations are produced by
L-C circuit (i.e. tank circuit containing inductor
and capacitor). These oscillations are damped
one i.e. their amplitude decrease with the
passage of time due to the small resistance
of the inductor. In other words, the energy of the L-C oscillations decreases. If this loss of energy is
compensated from outside, then undamped oscillations decreases. If this loss of energy is compensated
from outside, then undamped oscillations (of constant amplitude) can be obtained. This can be done
by using feed back arrangement and a transistor in the circuit.
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L-C circuit producing L-C oscillations consists of an inductor of inductance L and capacitor of variable
capacitance.Inductor of inductance L' is connected in the collector-emitter circuit through a battery and
a tapping key (K). Inductors L and L' are inductively coupled (Figure)
Working :- When key K is closed, collector current begins to flow through the coil L'. As this current
grows, magnetic flux linked with coil L' increase (i.e. changes). Since coil 1 is inductively coupled with
L', so magnetic flux linked with coil L also changes. Due to change in magnetic flux, induced e.m.f. is
set up across the coil L. The direction of induced e.m.f. is such that the emitter-base junction is forward
biased. As a result of this biasing, emitter current Ie increases which in turn increases the collector current
Ic [ Ie = Ib + Ic]
With the increase in collector current, magnetic flux linked with coil L' also increases. This increases
the e.m.f. induced in the coil L. The increased induced e.m.f. increases the forward bias of emitter base
junction. Hence emitter current is further increased which in turn increases the collector current. The process
of increasing the collector current continues till the magnetic flux linked with coil L' becomes maximum
(i.e. constant). At this stage, the induced e.m.f. in coil L becomes zero. The upper plate of the capacitor
C gets positively charged during this process. When induced e.m.f. becomes zero, the capacitor C starts
discharging through the inductor L. The. emitter current starts decreasing resulting in the collector current.
With decreasing collector current which flows through L', e.m.f. is again induced produced in the coil L
but in the opposite direction. It opposes the emitter current and hence collector current ultimately de-
creases to zero. The change in magnetic flux linked with coil L' stops and hence induced e.m.f. in the
coil L becomes zero. At this stage, the capacitor gets discharged through coil L but now in the opposite
direction. Now the emitter current and hence collector current increase but now in the opposite direction .This
process repeats and the collector current oscillates between maximum and minimum values.

1

2 LC
Advantages and disadvantages of Semiconductor devices over Vacuum tubes :
Advantage:
 Semiconductor devices are very small in size as compared to the vacuum tubes. Hence the circuits using
semiconductor devices are more compact.
 In vacuum tubes, current flows when the filament is heated and starts emitting electrons. So, we have to wait
for some time for the operation of the circuit. On the other hand, in semiconductor devices no heating is required
and the circuit begins to operate as soon as it is switched on.
 Semiconductor devices require low voltage for their operation as compared to the vacuum tube. So lot of electrical
power is saved.
 Semiconductor devices do not produce any humming noise which is large in case of vacuum tube.
 Semiconductor devices have longer life than the vacuum tube. Vacuum tube gets damaged when its filament
is burnt.
 Semiconductor devices are shock proof.
 The cost of production of semiconductor-devices is very small as compared to the vacuum tubes.
 Semiconductor devices can be easily transported as compared to vacuum tube.
Disadvantage:
 Semiconductor devices are heat sensitive. They get damaged due to overheating and high voltages. So they
have to be housed in a controlled temperature room.
 The noise level in semiconductor devices is very high.
 Semiconductor devices have poor response in high frequency range.

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EXERCISE # 1
Q.1 Correct statement of diode is -
[1] In full wave rectifier both diode work alternatively
[2] In full wave rectifier both diode work simultaneously
[3] Efficiency of full wave rectifier and half wave rectifier is same
[4] Full wave rectifier is bidirectional
Q.2 To convert P-N junction is forward biased condition negative terminal of battery is connected to -
[1] P side [2] NO connection [3] n side [4] dependends of temp.
Q.3 A semiconductor wire is connected in electric circuit in series and temperature of system increases current
[1] Decrease [2] Const [3] Increase [4] Flow will stops
Q.4 In forward Bias condition.The width of depletion layer -
[1] Increase [2] Decrease [3] Remains constant [4] Can't Say
Q.5 For pure 'Ge' semiconductor quantity of 'e' and hole is 10 19 e/m 3 if we doped donor impurity in it with density
1023 e/m 3 then quantity of hole (c/m 3) in semiconductor is -
[1] 10 15 [2] 10 19 [3] 10 23 [4] 10 27
Q.6 To a germanium sample traces of gallium are added as an impurity. The resultant sample could behave
like -
[1] A conductor [2] A n-type semiconductor
[3] A p-type semiconductor [4] An insulator
Q.7 In the case of constant  and  of a transistor -
[1]    [2]  < 1  > 1 [3]  = 1 [4]  > 1  < 1
Q.8 The electrical circuit used to get smooth DC output from a rectifier circuit is called -
[1] Filter [2] Oscillator [3] Logic gate [4] Amplifier
Q.9 If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will
be -
[1] 25 Hz [2] 50 Hz [3] 70.7 Hz [4] 100 Hz
Q.10 Barrier potential of a p-n junction diode does not depend on -
[1] diode design [2] temperature [3] forward bias [4] doping density
Q.11 A n-p-n transistor conducts when -
[1] both collector and emitter are positive with respect to the base
[2] collector is positive and emitter is negative with respect to the base
[3] collector is positive and emitter is at same potential as the base
[4] both collector and emitter are negative with respect to the base
Q.12 Reverse bias applied to a junction diode -
[1] lowers the potential barrier [2] raises the potential barrier
[3] increase the majority carrier current [4] increases the minority carrier current
Q.13 In P-N junction depletion layer decreases, when -
[1] 0V, FB [2] FB [3] RB [4] none of these

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Q.14 How depletion layer is decreases in P-N diode -
[1] diode at zero potential [2] diode at forward biasing
[3] diode at backward biasing [4] decrease in temp.
Q.15 Ripple coefficient of a half wave rectifier is -
[1] 1.21 [2] 0.48 [3] 0.61 [4] 2.14
Q.16 If the forward voltage in a diode is increased, the width of the depletion region -
[1] decreases [2] increases [3] fluctuates [4] does not change
Q.17 The band gap in Silicon and Germanium (in eV) respectively is -
[1] 0.7, 1.1 [2] 1.1, 0.7 [3] 1.1, 0 [4] 0.7, 0
Q.18 The ratio of resistance for forward to reverse bias of P-N junction diode is -
[1] 10 2 : 1 [2] 10 –2 : 1 [3] 1 : 10 –4 [4] 1 : 10 4
Q.19 P type semiconductors are made by adding impurity element -
[1] As [2] P [3] B [4] BI
Q.20 The resistance of a reverse biased pn junction diode is about -
[1] 1 ohm [2] 10 2 ohm [3] 10 3 ohm [4] 10 6 ohm
Q.21 If ne and n h are the number of electrons and holes in a semiconductor heavily doped with phosphorus,
then -
[1] n e >> n h [2] n e << n h [3] n e  nh [4] n e = n h
Q.22 At ordinary temperatures, an increase in temperature increases the conductivity of -
[1] conductor [2] insulator [3] semiconductor [4] alloy
Q.23 Symbol of zener diode -

[1] [2] [3] [4]

Q.24 Best representation of PN junction in FB condition -

[1] [2] [3] [4] none

Q.25 GaAs -
[1] elemental semiconductor [2] compound semiconductor
[3] insulator [4] metallic semiconductor
Q.26 In a full wave rectifier if input freq. is 50Hz then o/p ripple frequency will be -
[1] 50 Hz [2] 100 Hz [3] 200 Hz [4] 25 Hz
Q.27 Charge density of intrinsic semiconductor 'Si' is -
[1] 15 × 10 17 M–3 [2] 1.6 × 10 16 M–3 [3] 15 × 10 13 M–3 [4] 15 × 10 14 M–3
Q.28 For transistor current relation is -

  1  
[1]   [2]   [3]   [4]  
1  1   1 

Q.29 Depletion layer in p-n junction is due to -

[1] Drift holes [2] Diffusion of free carriers
[3] Migration of impurity ions [4] Drift of electron

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Q.30 Ratio of forward bias and reverse bias resistance of P-N junction diode is -
[1] 10 2 : 1 [2] 10 –2 : 1 [3] 1 : 10 4 [4] 1 : 10 –4
Q.31 Forbidden energy gap of Ge is 0.75 ev, maximum wave length of incident radiation of photon for producing
electron hole pair in germanium semiconductor is -
[1] 4200 Å [2] 16500 Å [3] 4700 Å [4] 4000 Å
Q.32 Mobility of electrons in N-type Ge is 5000 cm 2/volt sec and conductivity 5 mho/cm. If effect of holes in
negligible then impurity concentration will be -
[1] 6.25 × 10 15 / cm 3 [2] 9.25 × 10 14 / cm 3 [3] 6 × 10 13 / cm 3 [4] 9 × 10 13 / cm 3
Q.33 What will be conductance of pure silicon crystal at 300K temp. If electron hole pairs per cm 3 is 1.072 × 10 10
at this temp.,  n = 1350 cm 2/volt sec &  p = 480 cm 2/volt sec -
[1] 3.14 × 10 –6 mho/cm [2] 3 × 10 6 mho/cm [3] 10 –6 mho/cm [4] 10 6 mho/cm
Q.34 In an n-p-n transistor circuit, then collector current in 10mA. If 90% of electron emitted reach the collector
[1] the emitter current will be 9 mA [2] emitter current will be 11mA
[3] Base current will be 1mA [4] Base current will be –1mA
Q.35 Region which have no free elements and holes in a p-n junction is -
[1] p-region [2] n-region [3] junction [4] depletion region
Q.36 The intrinsic semiconductor becomes an insulator at -
[1] 0ºC [2] 0 K [3] 300 K [4] –100ºC
Q.37 In a ........ biased P-N Jn. the net flow holes is from n-region to the P-region -
[1] F.B. [2] R.B. [3] NO [4] Both 1 & 2
Q.38 In a transistor, -
[1] The emitter has the least concentration of impurity.
[2] The collector has the least concentration of impurity.
[3] The base has the least concentration of impurity.
[4] All the three regions have equal concentration of impurity.
Q.39 Diffusion current in a p-n junction is greater that the drift current in magnitude. -
[1] if the junction is forward biased [2] if the junction is reverse-biased
[3] if the junction is unbiased [4] in no case.
Q.40 The diffusion current in a p-n junction is -
[1] from the n-side to the p-side [2] from the p-side to the p-side
[3] from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse
biased.
[4] from the p-side to the n-side if the junction is forward biased and in the opposite direction if it is reverse
biased.
Q.41 The minority current in a p-n junction is -
[1] from the n-side to the p-side
[2] from the p-side to the n-side
[3] from the n-side to the p-side if the junction if forward biased and in the opposite direction if it is reverse biased
[4] from the p-side the n-side if the junction is forward biased and in the opposite direction if it is reverse biased

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Q.42 If the two ends of a p-n junction are joined by a wire, -
[1] There will not be a steady current from in the circuit
[2] There will be a steady current from the n-side to the p-side
[3] There will be a steady current from the p-side to the n-side
[4] There may or may not be a current depending upon the resistance of the connecting wire.
Q.43 When an impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor -
[1] increases [2] decreases [3] remains the same [4] become zero
Q.44 A p-type semiconductor is -
[1] positively charged [2] negatively charged [3] uncharged
[4] uncharged at 0K but charged at higher temperature.
Q.45 Let n p and n e be the number of holes and conduction electron in an extrinsic semiconductor -
[1] n p > n e [2] n p = n e [3] n p < n e [4] n p  ne
Q.46 Let n p and n e be the number of holes and conduction electron in an intrinsic semiconductor -
[1] n p > n e [2] n p = n e [3] n p < n e [4] n p  ne
Q.47 Electric conduction in a semiconductor takes place due to -
[1] electron only [2] holes only
[3] both electrons and holes [4] neither electrons nor holes
Q.48 When a potential difference is applied across, the current passing through -
[1] A semiconductor at 0K is zero [2] A metal at 0K is infinte.
[3] A P-N diode at 300K is finite if it is reverse biased [4] All
Q.49 In P-N junction at the near at junction -
[1] Positive ion [2] Negative ion
[3] Positive and Negative Ion [4] Electron and holes
Q.50 In P type semi conductor the majority charge carriers are -
[1] electrons [2] holes [3] neutrons [4] protons
Q.51 The forbidden gap in the energy bands of germanium at room temperature about -
[1] 1.1 eV [2] 0.1 eV [3] 0.67 eV [4] 6.7 eV

Q.52 A common Emitter circuit is used as a amplifier. Whose current gain is 50. If input resistance is 1K
and input voltage is 5 volt then output current will be -

[1] 250 mA [2] 30 mA [3] 50 mA [4] 100 mA

Q.53 In P-N Jn. which stops electron and holes to move from P to N and N to P -

[1] Increase in +ve and -ve ions at junction [2] increases in electrons at junction

[3] Increase in holes at junction [4] Increase in holes and electrons at junction

Q.54 A device whose one end is connected to -ve terminal end other end connected to +ve terminal then current
flow takes place. If both ends are interchanged with supply then current is not flowing then device will
be -

[1] P-N Jn. [2] Transistor [3] Zener diode [4] Triode

Electronics - Semiconductor |29|

 Physics
Q.55 In a P-N junction diode not connected to any circuit -

[1] Potential is the same very where

[2] The p-type side is at a higher potential than the n-type side

[3] There is an electric field at the junction directed form the n-type side to the P-type side

[4] There is an electric field at the junction directed form the P-type to the n-type side

Q.56 By Adding Arsenic in silicon semiconductor then its conductivity

[1] Increases [2] decreases [3] Remain same [4] Becomes zero

Q.57 Use of Inverter is :

[1] As a amplifier [2] AC to DC [3] As a modulator [4] DC to AC

Q.58 Input resistance of common emitter transistor is -

[1] low [2] high [3] low and high [4] none of these

Q.59 The contact potential at the junction side in a p-n junction is

[1] positive on p side and negative on n side [2] negative on p side and positive on n side

[3] zero [4] infinite

Q.60 An oscillator is nothing but an amplifier with -

[1] positive feedback [2] high gain [3] no feed back [4] negative feed back.

Q.61 The region of transistor in which extra impurity is doped to obtain a large number of majority carrier is
called as:

[1] emitter [2] base [3] collector

[4] anyone of these depending upon the transistor

Q.62 To use transistor as an amplifier

[1] emitter base junction is in forward biased and base collector junction is reverse biased.

[2] biasing voltage are not required

[3] both junctions are forward based

[4] both junctions are reverse biased.

Q.63 The value of barrier potential of p-n junction or n-p junction in Ge is :

[1] 0.03 volt in the direction of for ward current

[2] 0.3 volt in the direction opposite to the forward current.

[3] 25 volt in the direction opposite to the forward current

[4] 25 volt in the direction of the forward current.

Q.64 In a p-n junction the reverse saturated current is 10–5 ampere at 27°C. The value of forward current for
it at 0.2 volt bias will be : [exp (7.62) = 2038.6, k = 1.4 × 10–23 J/K]
[1] 2037.6 x 10–3 ampere [2] 203.76 x 10–3 ampere [3] 20.376 x 10–3 ampere [4] 2.0376 x 10–3ampere
Q.65 Transistor can be used as :
[1] amplifier [2] rectifier [3] oscillator [4] all of the above

Electronics - Semiconductor |30|

 Physics
Q.66 In transistor symbols, the arrows shows the direction of :
[1] current in the emitter [2] electron current in the emitter
[3] holes current in the emitter [4] electron current in the emitter
Q.67 The thinest part of a transistor is -
[1] emitter [2] base [3] collector
[4] according to transistor parameters none of these.
Q.68 When a p-n diode is reversed biased, then the current through the junction is mainly due to
[1] diffusion of charge [2] nature of the material
[3] drift of the charges [4] both drift and diffusion of the charges.
Q.69 Symbolic representation of photodiode is

[1] [2] [3] [4]

Q.70 P-n Junction is called as forward biased when :

[1] positive terminal of the battery is connected to the p-type semiconductor and negative terminal is connected
to the n-type semiconductor.
[2] positive terminal of battery is connected to the n-type semiconductor and negative terminal is connected
to the p-type semiconductor
[3] positive terminal of battery is connected to either P or n-type of semiconductor.
[4] A mechanical force is applied in for ward direction
Q.71 When the voltage drop across a PN junction diode is increased from 0.65 V to 0.70 V, the change in the diode
current is 5 mA. The dynamic resistance of diode is
(1) 10 (2) 20 (3) 50 (4) 80
Q.72 In a CE amplifier, using output resistance of 5000W and input resistance of 2000W, the value of b is 50. If the peak
value of signal voltage is 10 mV, then the peak value of output voltage is
(1) 5 × 10–6V (2) 2.5 × 10–4 V (3) 1.25 V (4) 125 V
Q.73 In the previous Q.72, the power gain is

125
(1) 125 × 50 (2) (3) 1.25 × 50 (4) 2.5 × 10–4
90

Q.74 14 × 1015 electrons reach the anode per second. If the power consumed is 448 mW, the anode voltage is
(1) 150 V (2) 200 V (3) (14 × 448) V (4) (448/14)V

ANSWER KEY EXERCISE # 1

Qus. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Ans. 1 3 3 2 1 3 4 1 4 1 2 2 2 2 1 1 2
Qus. 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Ans. 4 3 4 1 3 1 3 2 2 2 2 2 3 2 1 1 2,3
Qus. 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51
Ans. 4 2 2 3 1 2 1 1 1 3 4 2 3 4 3 2 3
Qus. 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68
Ans. 1 1 1 3 1 4 1 2 1 1 1 2 3 4 1 2 3
Qus. 69 70 71 72 73 74
Ans. 3 1 1 3 1 2

Electronics - Semiconductor |31|

 Physics
EXERCISE # 2
Q.1 Semiconductor is characterized by -
[1] Fulfilled valance band [2] Partially filled valance band
[3] Overlapping of valance and conduction band [4] None
Q.2 In the following common emitter configuration an 'npn' transistor with current gain  = 100 is used the
output voltage of amplifier will be -

[1] 10 mV [2] 0.1 V [3] 1.0 V [4] 10 V

Q.3 For the given circuit of P-N junction diode which is correct -

[1] In F.B. the voltage across R is V [2] In R.B. the voltage across R is V
[3] In F.B. the voltage across R is 2V [4] In R.B. the voltage across R is 2V
Q.4 In a P-N junction -
[1] High potential at N side and low potential at P side [2] High potential at P side and low potential at N side
[3] P and N both are at same potential [4] Undetermined
Q.5 In a n-p-n transistor circuit, the collector current is 10mA. If 90% of the electrons emitted reach the collector,
the emitter current (IE) and base current (IB) are given by -
[1] IE = 1mA ; IB = 11mA [2] IE = 11mA ; IB = 1mA[3] IE = –1mA ; IB = 9mA [4] IE = 9mA ; IB = –1mA
Q.6 A full wave rectifier circuit along with the input and output voltage is shown in the figure then output due
to diode (2) is -

output voltage

output voltage

[1] A, C [2] B, D [3] B, C [4] A, D

Q.7 Two wires P and Q made up of different materials have same resistance at room temperature. When heated,
resistance of P increases and that of Q decreases. We conclude that -
[1] P and Q both are conductors but because of being made of different materials it happens so
[2] P is n-type semiconductor and Q is p-type semiconductor
[3] P is semiconductor and Q is conductor
[4] P is conductor and Q is semiconductor
Q.8 Current in the circuit will be -

5 5
[1] [2]
40 50

5 5
[3] [4]
10 20
Q.9 The current flowing through the zener diode in fig. is -

[1] 20 mA [2] 25 mA
[3] 15 mA [4] 5mA

Electronics - Semiconductor |32|

 Physics
Q.10 Find VAB,

[1] 10 V [2] 20 V [3] 30 V [4] none

Q.11 Out of following in which configuration the diode value is in forward biased -

-5v -3v -2v 0v 0v -2v -2v -1v

[1] [2] [3] [4]

Q.12 In which case the junction diode is not reverse biased -

-5V +10V -10V -15V 0V 1V -2V 0V
[1] [2] [3] [4]

Q.13 Which of the following diode is reverse biased -

(I) (II)

(III) (IV)

[1] I [2] II [3] III [4] IV

Q.14 A two volts battery forward biases a diode however there is a drop of 0.5 v across the diode which is
independent of current. Also a current greater than 10mA produces large joule loss and damages diode.
It diode is to be operated at 5mA, the series resistance to be put is -

[1] 3 kW [2] 300 k [3] 300 k [4] 200 k

Q.15 In sample of pure silicon 10 13 atom/cm 3 is mixed of phosphorus. If all atoms are active then what will
be resistivity at 20ºC is mobility of electron is 1200 cm 2 / volt sec -
[1] 0.5209 ohm cm [2] 5.209 ohm cm [3] 52.09 ohm cm [4] 520.9 ohm cm
Q.16 An electric field is applied to a semiconductor. Let the number of charge carriers density in n' and the
average drift speed be v. If the temperature is increased, -
[1] both n and v will increase [2] n will increase but v will decrease
[3] v will increase but n will decrease [4] both n and v will decrease
Q.17 A transistor is used in the common emitter mode as amplifier then -
[a] The base emitter junction is forward biased [b] The base emitter junction is reverse biased
[c] The input signal is connected in series with the voltage applied to bias the base emitter junction
[d] The input signal is connected in series with the voltage applied to bias the base collector junction
[1] A, B [2] A, D [3] A, C [4] only C

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 Physics
Q.18 In the figure input is applied across A and C and output is taken across B and D, then the output is
B

A C

D
[1] Zero [2] same as input [3] full wave rectified [4] half wave rectified
Q.19 For a reverse bias p-n junction:
[1] P region is positive and current is due to electrons.
[2] P region is positive and the current is due to holes
[3] P region is negative and the current is due to electrons
[4] P region is negative and the current is due to both electron and holes.
Q.20 Refer to the circuit of fig. The base is left unconnected. In which direction would the current flow ?

(1) From emitter to collector (2) From collector to emitter

(3) The current would not flow (4) Data is not adequate
Q.21 Suppose emitter and base of NPN transistor have same doping concentration. In this case,
(1) both the base and collector currents will decrease
(2) both the base and collector currents will increase
(3) the base current shall decrease and the collector current shall increase
(4) the base current shall increase considerably and the collector current shall decrease considerably.
Q.22 Fig. shows a piece of semiconductor (pure one) S in series with a variable resistor R and a source of constant
voltage V. S is heated and the current is kept constant by adjustment of R. Which of the following factors will
decrease during this process ?

(a) The drift velocity of the conduction electrons in S.

(b) The DC resistance of S
(c) The number of conduction electrons in S. Which of the following is correct ?
(1) only 1 (2) 1 and 2 (3) 1, 2 and 3 (4) only 3
Q.23 A semiconductor diode and a resistor of constant resistance are connected in some way inside a box having two
external terminals. When a potential difference V of 1V is applied, I = 25 mA. If potential difference is reversed,
I = 50 mA. Forward resistance diode and resistance of resistor are

(1) 40W, 20W (2) 40W and 40W (3) 0W, ¥ (4) 6W, 12W

Electronics - Semiconductor |34|

 Physics
Q.24 Assume that the silicon diode in the circuit requires a minimum current of 1mA to be above the knee point (0.7V)
of I-V characteristics. Also assume that the voltage across the diode is independent of current above the knee
point. If VB = 5V, then the maximum value of R so that the voltage is above the knee point is

(1) 4.3 k (2) 2 k (3) 1  (4) 0

Q.25 In Q.24, if VB = 5 V, then the value of R to establish a current of 5 mA in the circuit is
(1) 860  (2) 910  (3) 1827  (4) 1917.8 
Q.26 In Q.24, what is the total power dissipated in the resistance and in the diode, when a current of 5 mA flows in the
circuit at VB = 6 volt ?
(1) 10 mW (2) 26.5 mW (3) 3.5 mW (4) 30 mW
Q.27 In Fig. the rms value of input is 20V. The transformation ratio is 1 : 2. The peak value of the voltage applied to the
diodes is

(1) 20 V (2) 20 2 V (3) 40 2 V (4) 80 2 V

Q.28 In Q.27, the D.C. component of the rectified output voltage is

2 2 2
(1) V (2)  20 (3)  40  2 V (4) 7 V
  
Q.29 In Q.27, the A.C. component of the rectified output is

2 2
(1) 0.48   40  2 V (2) 0.48   40 V (3) 1.21 × 7 V (4) 1.21
 
Q.30 A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the circuit shown so that half
wave rectification occurs. If the forward resistance of the diode is negligible compared to R, the rms voltage across
R is

100
(1) 200 (2) 100 (3) (4) 283
2

ANSWER KEY EXERCISE # 2

Qus. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Ans. 2 3 1 1 2 2 4 2 4 1 3 2 3 3 4 2 3
Qus. 18 19 20 21 22 23 24 25 26 27 28 29 30
Ans. 3 4 3 4 2 2 1 1 4 3 3 1 2

Electronics - Semiconductor |35|

 Physics
EXERCISE # 3
Q.1 A P-type semiconductor can be obtained by adding [MP PMT - 1987]
[1] Arsenic to pure silicon [2] Gallium to pure silicon
[3] Antimony to pure germanium [4] Phosphorous to pure germanium
Q.2 In a semiconductor, the concentration of electrons is 8 × 1014/cm 3 and that of the holes is 5 × 1012/cm 3. The
semiconductor is [RPET- 1999]
[1] P-type [2] N-type [3] Intrinsic [4] PNP-type
Q.3 When the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the
semiconductor is said to be [AIIMS-1997]
[1] Donar [2] Acceptor [3] Intrinsic [4] Extrinsic
Q.4 A piece of copper and the other of germanium are cooled from the room temperature to 80 K, then which of the
following would be a correct statement [RPET- 1999]
[1] Resistance of each increases [2] Resistance of each decreases
[3] Resistance of copper increases while that of germanium decreases
[4] Resistance of copper decreases while that of germanium increases
Q.5 To obtain P-type Si semiconductor, we need to dope pure Si with [PMT- 2001,02]
[1] Aluminium [2] Phosphorous [3] Oxygen [4] Germanium
Q.6 The energy gap of silicon is 1.14 eV. The maximum wavelength at which silicon will begin absorbing energy is
[1] 10888 Å [2] 1088.8 Å [MP PMT- 1983]
[3] 108.88 Å [4] 10.888 Å
Q.7 A silicon speciman is made into a P-type semi-conductor by dropping, on an average, one Indium atom per
5 × 107 silicon atoms. If the number density of atoms in the silicon specimen is 5 × 1028 atoms/m 3, then
the number of acceptor atoms in silicon per cubic centimeter will be [MP PMT- 1993,02]
[1] 2.5 × 1030 atoms/cm 3 [2] 1.0 × 1013 atoms/cm 3 [3] 1.0 × 1015 atoms/cm 3 [4] 2.5 × 1036 atoms/cm 3
Q.8 In P-N junction diode the reverse saturation current is 10–5 amp at 27ºC. The forward current for a voltage of 0.2
volt is [MP PMT- 1993]
[1] 2037.6 × 10–3 amp [2] 203.76 × 10–3 amp [3] 20.376 × 10–3 amp [4] 2.0376 × 10–3 amp
{exp (7.62) = 2038.6 K = 1.4 × 10–23 J/K}
Q.9 Bonding in a germanium crystal (semiconductor) is [EAMCET(Med)- 1995]
[1] Metallic [2] Ionic [3] Vander Waal's type [4] Covalent
Q.10 The electrical circuit used to get smooth dc output from a rectifier circuit is called [Karnataka CET- 2003]
[1] Oscillator [2] Filter [3] Amplifier [4] Logic gates
Q.11 What is the current in the circuit shown below [AFMC- 2000]

– 4v PN – 1V
300 

[1] 0 amp [2] 10–2 amp [3] 1 apm [4] 0.10 amp
Q.12 The p-n junction diode is used as [RPMT- 2002]
[1] An amplifier [2] A rectifier [3] An oscillator [4] A modulator
Q.13 When the forward voltage is increased in the crystal diode, then the thickness of depletion layer
[1] Decreases [2] Increases [Karnataka CET- 2001]
[3] Remains unchanged [4] Increases in the ratio of applied voltage

Electronics - Semiconductor |36|

 Physics
Q.14 Two P-N junctions can be connected in series by three different methods as shown in the figure. If the potential
difference in the junctions is the same, then the correct connections will be [IIT- 1989]

PN NP PN PN NP NP

+ – + – + –
(a) (b) (c)

[1] In the circuit (a) and (b) [2] In the circuit (b) and (c) [3] In the circuit (a) and (c) [4] Only in the circuit (a)
Q.15 A P-N junction has a thickness of the order of [BIT- 1990]
[1] 1 cm [2] 1 mm [3] 10–6 m [4] 10–12 cm
Q.16 In an insulator the forbidden energy gap between the valence band and conduction band is of the order of
[1] 1 MeV [2] 0.1 MeV [3] 1 eV [4] 5 eV[MP PET- 1996]
Q.17 The electrical resistance of the following decrease with rise in temperature [MP PET- 1994]
[1] Metals [2] Semiconductors [3] Gold [4] Constantan
Q.18 N-type semiconductor is prepared by doping silicon semiconductor by a [MP PET- 1994]
[1] Monovalent impurity [2] Divalent impurity [3] Trivalent impurity [4] Pentavalent impurity
Q.19 The forbidden energy band gap in conductors, semiconductors and insulators are EG1, EG2 and EG3 respectively.
The relation among them is [RPMT- 1997]
[1] EG1 = EG2 = EG3 [2] EG1 < EG2 < EG3 [3] EG1 > EG2 > EG3 [4] EG1 < EG2 > EG3
Q.20 Which of the following statements concerning the depletion zone of an unbiased P-N junction is (are) true
[1] The width of the zone is independent of the densities of the dopants (impurities) [IIT- 1995]
[2] The width of the zone is dependent on the densities of the dopants
[3] The electric field in the zone is produced by ionized dopant atoms
[4] The electric field in the zone is provided by the electrons in the conduction band and the holes in the
valence band
Q.21 Wires P and Q have the same resistance at ordinary (room) temperature. When heated, resistance of P increases
and that of Q decreases. We conclude that [MP PET- 2001]
[1] P and Q are conductors of different materials
[2] P is n-type semiconductor and Q is p-type semiconductor
[3] P is semiconductor and Q is conductor
[4] P is conductor and Q is semiconductor
Q.22 Holes are charge carriers in [IIT- 1996]
[a] Intrinsic semiconductors [b] Ionic solids [c] p-type semiconductor [d] Metals
[1] a, b, [2] b, c [3] a, c [4] only c
Q.23 In extrinsic P and N-type, semiconductor materials, the ratio of the impurity atoms to the pure
semiconductor atoms is about [MP PET- 2003]
[1] 1 [2] 10–1 [3] 10–4 [4] 10–7
Q.24 Different voltages are applied across a p-n junction and the currents are measured for each value. Which of the
following graphs is obtained between voltage and current [UPSEAT- 2002]

l l l l

[1] [2] [3] [4]

–v +v –v +v –v +v –v +v

Electronics - Semiconductor |37|

 Physics
Q.25 In P-type semiconductor the majority and minority charge carries are respectively [MH CET- 2000]
[1] Protons and electrons [2] Electrons and protons [3] Electrons and holes [4] Holes and electrons
Q.26 The approximate ratio of resistance in the forward and reverse bias of the PN junction diode is[MP PET- 2000]
[1] 102 : 1 [2] 10–2 : 1 [3] 1 : 10–4 [4] 1 : 104
Q.27 When a potential difference is applied across, the current passing through [IIT- 1999]
[a] An insulator at 0 K is zero [b] A semiconductor at 0 K is zero
[c] A metal at 0 K is finite [d] A p-n diode at 300 K is finite, if it is reverse biased
[1] a, b, c [2] a, b, d [3] b, d [4] none
Q.28 The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junction are
[IIT- 1997]
[1] Drift in forward bias, diffusion in reverse bias [2] Diffusion in forward bias, drift in reverse bias
[3] Diffusion in both forward and reverse bias [4] Drift in both forward and reverse bias
Q.29 In intrinsic semiconductor at room temperature number of electrons and holes are [JIPMER- 2001,02]
[1] Equal [2] Zero [3] Unequal [4] Infinite
Q.30 The impurity atom added to germanium to make it n-type semiconductor is [Karnataka CET- 2000]
[1] Arsenic [2] Iridium [3] Aluminium [4] Iodine
Q.31 The temperature coefficient of resistance of a semiconductor [AFMC-1998]
[1] Is always positive [2] Is always negative
[3] Is zero [4] May be positive or negative or zero
Q.32 Which one is reverse biased [DCE- 1999]

–5v
10v
[1] 15v [2] –5v [3] –10v [4]
–10v 10v

Q.33 In N-type semiconductors, majority charge carries are [AIIMS- 1999]

[1] Holes [2] Protons [3] Neutrons [4] Electrons
Q.34 Semiconductor is damaged by the strong current due to [MH CET- 2000]
[1] Lack of free electron [2] Excess of electrons [3] Excess of proton [4] None of these
Q.35 Which one is in forward bias [RPMT- 2000]

[1] [2] [3] [4] None of these

+ – – +

Q.36 If the distance between the conduction band and valence band is 1 eV, then this combination is [AIIMS- 2000]
[1] Metal [2] Insulator [3] Conductor [4] Semiconductor
Q.37 N-type semiconductor will be obtained, when germanium is doped with [MP PET- 2003]
[1] Phosphorus [2] Aluminium [3] Arsenic [4] Both (a) or (c)
Q.38 Intrinsic sem iconductor is electrically neutral. Extrinsic semiconductor having large num ber of
current carriers would be [AMU (Engg.)- 2003]
[1] Positively charged [2] Negatively charged
[3] Positive charged or negatively charged depending upon the type of impurity that has been added
[4] Electrically neutral

Electronics - Semiconductor |38|

 Physics
Q.39 In comparison to a half wave rectifier the full wave rectifier gives lower [AFMC- 2001]
[1] Efficiency [2] Average dc [3] Average output voltage [4] none of these
Q.40 The band gap in Germanium and silicon in eV respectively is [MP PMT- 2001]
[1] 0.7, 1.1 [2] 1.1, 0.7 [3] 1.1, 0 [4] 0, 1.1
Q.41 A full wave rectifier circuit along with the input and output voltages is shown in the figure. [MP PMT- 2001]

1
Output
2 voltage

Input voltage

A B C D
Output voltage

The contribution to output voltage from diode 2 is

[1] A, C [2] B, D [3] B, C [4] A, D

Q.42 Which is the correct relation for forbidden energy gap in conductor semi conductor and insulator
[1] Egc > Egsc > Eginsulator [2] Eginsulator > Egsc > Egconductor [AIEEE- 2002]

[3] Egconductor > Eginsulator > Egsc [4] Egsc > Egconductor > Eginsulator

Q.43 A 2V battery is connected across the point A and B as shown in the figure given below. Assuming that the
resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery
when its positive terminal is connected to A is [UPSEAT- 2002]

[1] 0.2 A [2] 0.4 A [3] zero [4] 0.1 A

Q.44 In the given figure which of the diodes are forward biased ? [Kerala PET- 2002]
+5V
R +10V
–10V –12V
R
a. b. c. d.
+5V –5V

R
e.
–10V
[1] a, b, c [2] b, d, e [3] a, c, d [4] b, c, d
Q.45 A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 5.0 × 10–7 m wide, the intensity
of the electric field in this region is [UPSEAT- 2002]
[1] 1.0 × 106 V/m [2] 1.0 × 105 V/m [3] 2.0 × 105 V/m [4] 2.0 × 106 V/m
Q.46 If np and ne are the number of holes and electrons then in an intrinsic semi-conductor [MP PMT- 2002]
[1] np > ne [2] np = ne [3] np < ne [4] np  ne
Q.47 If no external voltage is applied across P-N junction, there would be [Orissa JEE- 2002]
[1] No electric field across the junction
[2] An electric field pointing from N-type to P-type side across the junction
[3] An electric field pointing from P-type to N-type side across the junction
[4] A temporary electric field during formation of P-N junction that would subsequently disappear

Electronics - Semiconductor |39|

 Physics
Q.48 Which value of potential barrier is in the range, for given PN junction: [PET- 1980]

[1] 0.2 [2] 25 [3] 2.5 [4] 35

Q.49 The barrier potential in a p-n junction is maximum in : [PET- 1988]

[1] the reveres bias condition [2] the forward bias condition
[3] the condition when the junction diode is use as rectifier.
[4] zero bias condition

Q.50 When value of current increase in p-n junction, then the value of contact potential - [PET- 1985]
[1] decrease [2] increase
[3] remain unchanged [4] depends on temperature
Q.51 The P-n junction is a [PET- 1985]
[1] ohmic resistance [2] non ohmic resistance [3] positive resistance [4] negative resistance
Q.52 The depletion region of a P-n junction contains : [MP PMT-1993]
[1] electrons only [2] electrons and hole both
[3] holes only [4] neither electrons nor holes

Q.53 A P-type silicon semiconductor is made by adding one atom of indium per 5 x 10 7 atoms of silicon is
25 x 10 28 atom per meter 3. Point the number of acceptor atoms in per cubic cm. of silicon.
[1] 2 x 10 30 atom/cm 3 [2] 5 x 10 15 atom/cm 3 [MP PMT- 1993]
[3] 1 x 10 15 atom/cm 3 [4] 2.5 x 10 36 atom/cm 3
Q.54 Which element is to be mixed in germanium to make acceptor type semiconductor [PET- 1995]
[1] tri-valent atom [2] tetra-valent atom [3] penta-valent atom [4] none of the above
Q.55 In a P-type semiconductor, the acceptor level is 57 mev, above the valence band. The maximum wave
length of light required to produce a hole will be - [MP PMT- 1995]
[1] 57 Å [2] 57 x 10 –3 Å [3] 217100 Å [4] 11.61 x 10 Å
–34
(Planck's constant h = 6.6 x 10 Joule x Sec)

Q.56 For P-type semiconductor impurity element is : [PMT- 1995]

[1] Boron [2] Bismoth [3] Arsenic [4] Phosporus
Q.57 Which statement is correct for p -type semiconductor: [PET- 1994]
[1] the number of electrons in conduction band is more than number of holes in valence bond at room
temperature
[2] the number of holes in valence band is more than number of electrons in conduction bond at room
temperature
[3] there are no holes and electrons at room temperature
[4] number of holes and electrons is equal in valence and conduction bond

Q.58 P type semi conductor is - [PET- 1992]

[1] Positive charged
[2] Made by mixing of impurity of boron in germanium
[3] made by mixing of impurity of phosphorus in silicon.
[4] made by mixing of impurity of carbon in silicon

Electronics - Semiconductor |40|

 Physics
Q.59 If n-type semiconductor is heated then - [PMT- 1993]

[1] the number of electrons increases and the number of holes decreases.

[2] The number of holes increase and the number of electrons decreases.

[3] the number of electrons and holes both remain equal

[4] the number of both electrons and holes increases.

Q.60 n-type semiconductor is made by mixing following one impurity with silicon semiconductor:

[1] Mono valent impurity [2] divalent impurity [PET- 1994]

[3] trivalent impurity [4] penta-valent impurity

Q.61 Which of the following energy band diagram shows the n-type semiconductor: [RPET- 1986]

Q.62 In pure semiconductor Ge when we add the impurity of arsenic then we get a : [PMT- 1989]

[1] P-type semiconductor [2] n-type semiconductor [3] conductor [4] P-n junction

Q.63 On adding a small amount of arsenic impurity in Si its Conductivity: [PMT- 1985]

[1] Increases [2] decreases [3] remains unchanged [4] becomes Zero

Q.64 The width of forbidden energy gap in silicon is : [RPET- 1985]

[1] 0 ev [2] 0.7 ev [3] 1.1ev [4] 7 ev

Q.65 The energy gap in a semiconductor is of the order of : [RPET- 1980]

[1] 1 ev [2] 5 ev [3] 10 ev [4] 15 ev

Q.66 The forbidden energy gap in Ge is : [RPET- 1989]
[1] 0.72 ev [2] 0.072 ev [3] 7.2 ev [4] 0.0072 ev

Q.67 The atomic bonding is same for which of the following pairs : [RPET- 1989]
[1] Ag and Si [2] Ge and Si [2] Ne and Ge [4] Nacl and Ge

Q.68 Platinum and silicon are cooled after heating up to 250º C - [RPET- 1989]
[1] resistance of platinum will increases and that of silicon decrease

[2] resistance of silicon will increases and that of platinum decrease

[3] resistance of both will decrease [4] resistance of both increases
Q.69 At absolute zero Temperature, pure germanium and silicon are : [RPET- 1995]

[1] Conductor [2] good semiconductors [3] ideal insulators [4] super conductors

Electronics - Semiconductor |41|

 Physics

Q.70 The resistivity of a semiconductor depends upon its - [MP PMT- 1992]
[1] Size [2] type of atoms

[3] length [4] size and type of atom

Q.71 On increasing the temperature the specific resistance of a semiconductor - [RPET- 1991]

[1] increases [2] decreases

[3] does not change [4] first decreases and then increases

Q.72 In a sample of intrinsic silicon crystal the number electrons holes are - [RPET- 1991]
[1] equal [2] different [3] time dependent [4] none of the above
Q.73 The materials resistance of which decreases with increases in temperature ( i.e. the temperature coefficient

of resistance is negative) are called - [MP PET- 1994]

[1] Conductors [2] Insulators [3] semiconductors [4] All of the above

Q.74 Semiconductors such as germanium and silicon exhibit [RPET- 1988, PET-93]
[1] Covalent bonding [2] metallic bonding [3] ionic bonding [4] vanderwalls bonding

Q.75 Pick out the set in which all the materials are good conductors of electricity - [MP PET- 1995]

[1] Cu, Ag, and Au [2] Cu, Si and diamond [3] Cu, Hg and Nacl [4] Cu, Ge and Hg.

Q.76 If number of holes and free electrons in semiconductor are n p and ne respectively then [MP PET- 1995]

[1] n p > n e in intrinsic Semiconductor. [2] n p = n e in extrinsic Semiconductor.

[3] n p = n e in intrinsic Semiconductor. [4] n e > n p in intrinsic Semiconductor.

Q.77 Cu and Ge are coiled to 70 K then - [PMT- 1995]

[1] the resistance of Cu will decrease and that of Ge will decrease

[2] the resistance of Cu will decrease and that of Ge will increase

[3] the resistance of both Cu and Ge decrease

[4] the resistance of both Cu and Ge increase

Q.78 The energy gap in insulator is of the order - [PMT- 1995]

[1] Zero [2] 0.7 ev [3] 1.1 ev [4] 5 ev

Q.79 The valence band at 0ºK is - [CPMT- 1995]

[1] Completely filled [2] Completely empty [3] partially filled [4] nothing can be said

Q.80 The energy gap for insulators is - [RPMT- 1996]

[1] 1.1 ev [2] 0.02 ev [3] 6 ev [4] 0.7 ev
Q.81 For a metallic wire the ratio (v/i) : (v = applied potential = i = Current flowing) [MP PET- 1994]

[1] does not depend upon temperture.

[2] increases with increase in temperature

[3] decreases with increase in temperature.

[4] Increases or decrease by increase in temperature as according to nature of the metal

Electronics - Semiconductor |42|

 Physics
Q.82 In insulators - [MP PET- 1993]
[1] Valence band is completely filled with electrons.
[2] Conduction band is partially filled with electron
[3] Conduction band is partially filled with electrons but the valence band is empty
[4] Conduction band is empty and valence band is completely filled with electrons.
Q.83 Which impurity is dropped in Si to form N-type semi-conductor - [AIEEE-2002]
[1] Al [2] B [3] As [4] none of these
Q.84 The energy band gap is maximum in - [AIEEE-2002]
[1] Metals [2] Superconductors [3] Insulators [4] semiconductors
Q.85 The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially
due to the difference in the - [AIEEE-2003]
[1] Variation os scattering mechanism with temperature
[2] Crystal structure
[3] Variation of the number of charge carriers with temperature
[4] Type of bonding
Q.86 In the middle of the depletion layer of a reverse-biased P-N junction, the [AIEEE-2003]
[1] Potential is zero [2] Electric field is zero
[3] Potential is maximum [4] Electric field is maximum
Q.87 When npn transistor is used as an amplifier - [AIEEE-2004]
[1] holes move from base to emitter [2] holes move from emitter to base
[3] electrons move from emitter to base [4] electrons move from base to emitter
Q.88 The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter
than 2480 nm is incident on it. The band gap in (eV) for the semiconductor is - [AIEEE-2005]
[1] 0.5 eV [2] 0.7 eV [3] 1.1 eV [4] 2.5 eV
Q.89 In a common base amplifier, the phase difference between the input signal voltage and output voltage is -

 
[1] 0 [2] [3] [4]  [AIEEE-2005]
2 4
Q.90 In a full wave rectifier circuit operating from 50Hz mains frequency, the fundamental frequency in the ripple would
be - [AIEEE-2005]
[1] 100 Hz [2] 70.7 Hz [3] 50 Hz [4] 25 Hz
Q.91 A semiconductor dopped with a donor impurity is [AFMC-2005]
[1] p-type [2] n-type [3] n-p-n type [4] p-n-p type
Q.92 Application of a forward bias to a p-n junction - [CPMT-2005]
[1] increase the number of donors on the n side [2] widens the depletion zone
[3] increase the potential difference across the depletion zone [4] increase the electric field in the depletion zone
Q.93 Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bands
are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following
relationships is true in their case [CPMT-2005]
[1] (Eg)C < (Eg)Ge [2] (Eg )C < (Eg)Si [3] (Eg )C = (Eg)Si [4] (Eg )C > (Eg)Si
Q.94 Zener diode is used for - [CPMT-2005]
[1] Amplification [2] Producing oscillations in an oscillator
[3] Stabilisation [4] Rectification
Q.95 Choose the only false statement from the following [CPMT-2005]
[1] Substances with energy gap of the order of 10 eV are insulators
[2] The conductivity of a semiconductor increases with increase in temperature
[3] In conductors the valence and conduction bands may over lap.
[4] The resistivity of a semiconductor increases with increase in temperature.

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 Physics
Q.96 For a transistor amplifier in common emitter configuration for load impedance of 1kW (h fe = 50 and
hoe = 25mA/V), the current gain is - [AIEEE- 2004]
[1] –5.2 [2] –15.7 [3] –24.8 [4] –48.78
Q.97 A piece of copper and another of germanium are cooled from room temperature to 77K, the resistance of -
[1] each of them increases [2] each of them decreases [AIEEE- 2004]
[3] copper decreases and germanium increases [4] copper increases and germanium decreases
Q.98 When p-n junction diode is forward biased, then [AIEEE- 2004]
[1] the depletion region is reduced and barrier height is increased
[2] the depletion region is widened and barrier height is reduced
[3] both the depletion region and barrier height is reduced
[4] both the depletion region and barrier height are increased
Q.99 In a common base mode of transistor, the collector current is 5.488mA for an emitter current of 5.60mA. The
value of the base current amplification factor (b) will be - [AIEEE- 2006]
[1] 50 [2] 51 [3] 48 [4] 49

7
Q.100 If the ratio of the concentration of electrons to that of holes in a semiconductor is and the ratio of currents
5

7
is , then what is the ratio of their drift velocities - [AIEEE- 2006]
4

4 5 4 5
[1] [2] [3] [4]
5 4 7 8

Q.101 In the following, which one of the diodes is reverse biased - [AIEEE- 2006]

-12V
R R
[1] [2]
-5V -10V
+5V
+10V
R
[3] ` [4] R
+5V

Q.102 If the lattice constant of this semiconductor is decreased, then which of the following is correct -[AIEEE- 2006]
conduction band width Ec

band gap Eg

valence band width Ev

[1] Ec and Ev increase, but Eg decreases [2] Ec and Ev decrease, but Eg increase
[3] All Ec, Eg, Ev decrease [4] All Ec, Eg, Ev increase
Q.103 The circuit has two oppositely connected ideal didoes in parallel. What is the current flowing in the circuit-
4

D1 D2

12V
3 2

[1] 2.00 A [2] 2.31 A [3] 1.33 A [4] 1.71 A[AIEEE- 2006]

Electronics - Semiconductor |44|

 Physics
Q.104 A transistor is operated in common emitter configuration at constant collector voltage Vc = 1.5V such that a
change in the base current from 100mA to 150mA produces a change in the collector current from 5mA to 10mA.
The current gain (b) is - [CPMT - 2006]
[1] 75 [2] 100 [3] 50 [4] 67
Q.105 A forward biased diode is - [CPMT - 2006]

[1] 3V 5V [2] -2V +2V

[3] 0V -2V [4] -4V -3V

Q.106 Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following
statements is most appropriate - [AIEEE-2007]
[1] The number of free conduction electrons is significant in C but small in Si and Ge.
[2] The number of free conduction electrons is negligibly small in all the three.
[3] The number of free electrons for conduction is significant in all the three.
[4] The number of free electrons for conduction is significant only in Si and Ge but small in C.
Q.107 In the energy band diagram of a material shown below the open circles and filled circles denote holes and electrons
respectively. The material is [CPMT-2007]

EC

Eg

EV

[1] an n-type semiconductor [2] a p-type semiconductor

[3] an insulator [4] a metal
Q.108 A common emitter amplifier has a voltage gain of 50, an input impedance of 100 and an output impedance
of 200W. The power gain of the amplifier is [CPMT-2007]
[1] 100 [2] 500 [3] 1000 [4] 1250

ANSWER KEY EXERCISE # 3

Qus. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Ans. 2 2 3 4 1 1 3 3 4 2 1 2 1 2 3 4 2
Qus. 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Ans. 4 2 2 4 3 4 3 4 4 2 2 1 1 2 3 4 2
Qus. 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51
Ans. 2 4 4 3 4 1 2 2 1 2 1 2 2 1 1 1 2
Qus. 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68
Ans. 4 2 1 3 1 2 2 4 4 2 2 1 3 1 1 2 2
Qus. 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85
Ans. 3 2 2 1 3 1 1 3 2 4 1 3 2 4 3 3 3
Qus. 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102
Ans. 4 3 1 1 1 2 3 4 3 4 4 3 3 4 2 3 4
Qus. 103 104 105 106 107 108
Ans. 1 2 3 4 2 4

Electronics - Semiconductor |45|

 Physics

LOGIC GATE

INTRODUCTION
A logic gate is a digital circuit which is based on certain logical relationship between the input and the output
voltages of the circuit.
The logic gates are built using the semiconductor diodes and transistors.
Each logic gate is represented by tits characteristic symbol.
The operation of a logic gate is indicated in a table, known as truth table. This table contains all possible
combinations of inputs and the corresponding outputs.
A logic gate is also represented by a Boolean algebraic expression. Boolean algebra is a method of writing
equations showing how an output depends upon the combination of inputs. Boolean algebra was invented by
George Boole.
Basic logic gates
(1) OR gate (2) AND gate, and (3) NOT gate
The OR gate : - The output and an OR gate attains the state 1 if one or more inputs attain the state 1.
Logic symbol of OR gate
A
Y = A+ B
B
The Boolean expression of OR gate is Y = A + B, read as Y equals A or B.
Truth table of a two input OR gate
Input Output
A B Y
0 0 0
0 1 1
1 0 1
1 1 1
The AND gate : The output of an AND gat attains the state 1 if and only if all the inputs are in state 1.
Logic symbol of AND gate
A
Y = AB
B
The Boolean expression of AND gate is Y = A.B It is read as Y equal A and B
Truth table of a two input AND gate
Input Output
A B Y
0 0 0
0 1 0
1 0 0
1 1 1
The NOT gate : The output of a NOT gate attains the state 1 if and only if the input does not attain the state 1.
Logic symbol of NOT gate
A Y

The Boolean expression is Y  A , read as Y equals NOT A.

Truth table of NOT gate
Input Output
A B
0 1
1 0

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 Physics
COMBINATION OF GATES :
The three basis gates (OR, AND and NOT) when connected in various combinations give us logic gates such
as NAND, NOR gates, which are the universal building blocks of digital circuits.
The NAND gate
Logic symbol of NAND gate
A
Y = AB
B

The Boolean expression of NAND gate is Y  AB

Truth table of a NAND gate
Input Output
A B Y
0 0 1
0 1 1
1 0 1
1 1 0
The NOR gate :
Logic symbol of NOR gate
A
Y = A+ B
B
The Boolean expression of NOR gate is Y  A  B
Truth table of a NOR gate
Input Output
A B Y
0 0 1
0 1 0
1 0 0
1 1 0
UNIVERSAL GATES :
The NAND or NOR gate is the universal building block of all digital circuits. Repeated use of NAND gates
(or NOR gates) gives other gates. Therefore, any digital system can be achieved entirely from NAND or NOR
gates. We shall show how the repeated use of NAND (and NOR) gates will gives use different gates.
The NOT gate from a NAND gate : When all the inputs of a NAND gate are connected together, as shown
in the figure, we obtain a NOT gate
A
Y
B
Truth table of single-input NAND gate
Input Output
A B = (A) Y
0 0 1
1 1 0
The AND gate from a NAND gate : If a NAND gate is followed by a NOT gate (i.e., a single input NAND
gate), the resulting circuit is an AND gate as shown in figure and truth the table given show how an AND
gate has been obtained from NAND gates.
A
Y
B Y’
Truth table
A B Y' Y
0 0 1 0
0 1 1 0
1 0 1 0
1 1 0 1

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 Physics
The OR gate from NAND gate : If we invert the inputs A and B and then apply them to the NAND gate,
the resulting circuit is an OR gate.

A
A
Y
B B

Truth table
A B A B Y
0 0 1 1 0
0 1 1 0 1
1 0 0 1 1
1 1 0 0 1
The NOT gate from NOR gates : When all the inputs of a NOR gate are connected together as shown in
the figure, we obtain a NOR gate.

A y
B

The AND gate from NOR gates : If we invert the inputs A and B and then apply them to the NOR gate,
the resulting circuit is an AND gate.

A
Y

The OR gate from NOR gate : If a NOR gate is followed by a single input NOR gate (NOT gate), the resulting
circuit is an OR gate.
A
Y
B
XOR AND XNOR GATE :
The exclusive - OR gate (XOR gate) : The output of a two -input XOR gate attains the state 1 if one and
only one input attains the state 1.
Logic symbol of XOR gate
A
Y
B

The Boolean expression of XOR gate is Y  A B  AB or Y  A  B

Truth table of a XOR gate

Input Ouput
A B Y
0 0 0
0 1 1
1 0 1
1 1 0

Exclusive : NOR gate (XNOR gate) The output is in state 1 when its both input are the same that is, both
0 or both 1.

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 Physics
Logic symbol of XNOR gate
A
Y
B

The Boolean expression of XNOR gate is Y = A.B + A.B or Y = A  B

Truth table of a XNOR gate

Input Ouput
A B Y
0 0 0
0 1 0
1 0 0
1 1 1
Laws of Boolean Algebra
Basic OR, AND, and NOT operations are given below :
OR AND NOT
A + 0 = A A. 0 = 0 A + A = 1

A + 1 = 1 A. 1 = 1 A. A = 0

A+ A= A A .A = A A .A =A
Boolean algebra obeys commutative, associative and distributive laws as given below :
Commutative laws :
A + B = B + A ;
AB = BA
Associative laws :
A + (B + C) = (A + B) + C;
A. (B. C) = (A. B). C
Distributive laws :
A (B + C) = AB + AC
Some other useful identities :
(i) A + AB = A;
(ii) A. (A + B) = A.

(iii) A + A B = A + B

(iv) A. ( A + B) = AB

(v) A + BC = (A + B) (A + C)

(vi) ( A + B) (A + C) = A C
De Morgan’s theorem :
First theorem :

A  B  A.B

Second theorem :

A.B  A  B

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RAPI D REVI SI ON PACKAGE

Logic gates |50|

 Physics
EXERCISE # 1
Q.1 Following circuit performs the logic function of - [CBSE PM/PD-2003]
[1] AND gate [2] NAND gate [3] OR gate [4] XOR gate
Q.2 Boolean algebra is essentially based on - [AIIMS-1999]
[1] logic [2] truth [3] numbers [4] symbol
Q.3 Which of the following gates will have an output of 1 - [CBSE PM/PD-1998]
1 0 0 0
0 0 1 1
1 1 1 0
(a) (b) (c) (d)
[1] a and b [2] b and c [3] c and d [4] a and d
Q.4 How many AND gate are required to form NAND gate - [BHU-1997]
[1] 1 [2] 3 [3] 2 [4] 4
Q.5 The truth table shown below is for which of the following gate - [CBSE PM/PD-1997]
A B Y
1 1 0
1 0 0
0 1 0
0 0 1
[1] AND [2] NAND [3] XOR [4] NOR
Q.6 The symbol represents - [CBSE PM/PD - 1996]
A
Y
B
[1] NAND gate [2] OR gate [3] AND gate [4] NOR gate
Q.7 Given below are symbols for some logic gates - [AFMC-1994]

(a) (b) (c) (d)

The XOR gate and NOR gate respectively are
[1] a and b [2] b and c [3] c and d [4] a and d

Q.8 In the Boolean algebra A.B equals - [BHU-1994]

[1] A + B [2] A  B [3] A . B [4] A.B

Q.9 Which of the following gate corresponds to the truth table given below - [CBSE PM/PD-1994,95]

A B Y
0 0 1
0 1 1
1 0 1
1 1 0
[1] NAND [2] AND [3] XOR [4] OR
Q.10 In Boolean algebra Y = A + B implies that - [CBSE PM/PD-1993]
[1] Output Y exists when both input A and B exist
[2] output Y exists when either input A exists or input B exist or both inputs A and B exist
[3] Output Y exists when either input A exists or input B exist but not when both inputs A and B exist.
[4] Output Y exists when both inputs A and B exist but not when either input A or B exists.

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 Physics
Q.11 What would be the output of the circuit whose Boolean expression -
[1] 1 [2] 0 [3] both 1 & 2 [4] none of these
Q.12 An OR gate is followed by a single input NAND gate. Using two inputs A and B, the Boolean expression
of the output Y is -

[1] Y  A  B [2] Y = A + B [3] Y = AB [4] Y = AB

Q.13 Which of the following relations is valid for Boolean algebra -

[1] A + A = A [2] A. A = A [3] A. A  0 [4] A + 1 = 1

[5] All
Q.14 The output Y of the combination of gates shown in equal to -
A Y
AND
B
OR
[1] A [2] A [3] A + B [4] AB
Q.15 The truth table shown in of -
A B Y
0 0 0
0 1 1
1 0 1
1 1 0
[1] NAND gate [2] NOR gate [3] XOR gate [4] XNOR gate
Q.16 ‘Output is LOW if and only if all the inputs are HIGH’ Indicate the logic gate for which the above statement
in true. -
[1] AND [2] OR [3] NOR [4] NAND
Q.17 The output of a two input NOR gate is in state 1 when -
[1] either input terminals is at 0 state [2] either input terminals is at 1 state
[3] both input terminals are at 0 state [4] both input terminals are at 1 state
Q.18 The NOR gate is logically equivalent to an OR gate followed by -
[1] an inverter [2] a NOR gate [3] a NAND gate [4] an OR gate
Q.19 A NAND gate followed by a NOT gate is -
[1] an OR gate [2] an AND gate [3] a NOR gate [4] a XOR gate
Q.20 Which of the following paris are universal gates -
[1] NAND, NOT [2] NAND, AND [3] NOR, OR [4] NAND, NOR
Q.21 When all the inputs of a NAND gate are connected together, the resulting circuit is -
[1] a NOT gate [2] an AND gate [3] an OR gate [4] a NOR gate
Q.22 The truth table shown below is for which of the following gates -

A B Y
1 1 0
0 1 1
1 0 1
0 0 1
[1] NAND [2] AND [3] XOR [4] NOR

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 Physics
Q.23 Given below are four logic symbols. Those for OR, NOR and NAND gates are respectively. -

A A A A
Y Y Y Y
B B B B
(a) (b) (c) (d)
[1] a, d, c [2] d, a, b [3] a, c, d [4] d, b, a
Q.24 In Boolean algebra Y = A + B means that -
[1] Y is the sum of A and B
[2] Y exists when either A or B or both A and B exist
[3] Y exists only when both A and B exist
[4] Y exists when either A or B exists but not when both A and B exist
Q.25 Which of the following relation is valid in Boolean algebra -
[1] A  A  0 [2] A + A = 2A [3] A  A  1 [4] A  A  A
Q.26 Digital circuits can be made by repetitive use of -
[1] OR gate [2] AND gate [3] NOT gate [4] NAND gate
Q.27 In Boolean algebra, which of the following is not equal to zero. -

[1] A. A [2] A.0 [3] A  A [4] A.0

Q.28 Which of the following Boolean expression is not correct -

[1] A.B  A  B [2] A  B  A .B [3] (A.B).(A.B)  A B [4] 1  1  1

Q.29 You are given two circuits as shown in following figure. The logic operation carried out by the two circuit
are respectively -

A Y
A Y
Y
B
B

[1] AND, OR [2] OR, AND [3] NAND, OR [4] NOR, AND
Q.30 An XOR gate produces an output only when its two inputs are
[1] same [2] different [3] low [4] high
Q.31 The output of gate is low when at least one of its input is high. This is true for -
[1] NOR [2] OR [3] AND [4] NAND
Q.32 The arrangement shown in figure performs the logic function of a/an ......... gate -
A
Y
B
[1] OR [2] XOR [3] NAND [4] AND
Q.33 The truth table given below if for -

A B Y
0 0 1
0 1 0
1 0 0
1 1 1
[1] OR gate [2] AND gate [3] XNOR gate [4] XOR gate
Q.34 The output of the given logic gate is 1 when inputs A, B and C are such that -
[1] A = 1, B = 0, C = 1 [2] A = 1, B = 1, C = 0 [3] A = B = C = 0 [4] A = B = C = 1

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Q.35 In the circuit below, A and B represent two inputs and C represents the output.
The circuit represents

[1] AND gate [2] NAND gate [3] OR gate [4] NOR gate
Q.36. The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as shown. Pick out the correct out
put waveform.

[1] [2]

[3] [4]

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