BJT

Electronic Devices and
System
Dr Chinmayee Dora
Dept. Electronics & Communication Engineering
Centurion University of Technology & Management
Bipolar Junction Transistors
The bipolar junction transistor (BJT) was named because its
operation involves conduction by two carriers: electrons and
Bipolar Juntion holes in the same crystal. The first bipolar transistor was
invented at Bell Labs by William Shockley, Walter Brattain,
Transistors and John Bardeen so late in 1947 that it was not published
until 1948.
A bipolar junction transistor (BJT) consists of three differently
doped regions. These can have the configuration of npn or pnp
and the various layers can either be parallel or perpendicular to
Construction the surface.
Emitter region - this is usually a heavily doped region (p+). The
emitter ‘emits’ the carriers into the base.
Base region - this is a lightly doped n region. The base region is
also physically thin so that carriers can pass through with minimal
recombination.
Collector region - this is a p type region. The collector region has a
larger width that the other two regions since charge is
accumulated here from the base.
A transistor consists of two pn junctions, each with its own
depletion region.
1. Emitter-base junction - since the emitter is usually heavily
doped, the depletion region lies almost entirely in the base.
Construction 2. Base-collector junction - the depletion region at this junction is

usually divided between base and collector, since they are
comparably doped.
There are three different configurations in which the BJT can
function - common base, common emitter, and common
collector.
BJT Symbol:
PNP
NPN
Configuration
•Common Base (CB) Configuration: no current gain but voltage gain
•Common Emitter (CE) Configuration: current gain and voltage gain
•Common Collector (CC) Configuration: current gain but no voltage gain

• One p–n junction of a transistor is reverse-biased, whereas the other is forward-
biased.
• A large number of majority carriers will diffuse across the forward biased p–n
junction into the n -type material.
• It contribute directly to the base current IB or pass directly into the p -type
material. Since the sandwiched n -type material is very thin and has a low
conductivity, a very small number of these carriers will take this path of high
Transistor resistance to the base terminal.
• The magnitude of the base current is typically on the order of microamperes, as
Operation compared to milliamperes for the emitter and collector currents.
Transistor
Operation
To describe the behavior of a three-terminal device such as the common-
base amplifiers requires two sets of characteristics—
One for the driving point or input parameters and the other for the output
side. The input set for the common-base amplifier relates an input current
(IE ) to an input voltage ( VBE ) for various levels of output voltage ( VCB ).
CB
Configuration
Characteristics
The output set relates an output current ( IC ) to an output voltage ( VCB ) for
various levels of input current ( IE )
CB
Configuration
Characteristics
Active Region: The base–emitter junction is forward-biased, whereas the
Regions in O/P collector–base junction is reverse-biased.
characteristics
Cutoff region: The base–emitter and collector–base junctions of a
of BJT in CB transistor are both reverse-biased.
configuration Saturation Region: The base–emitter and collector–base junctions are
forward-biased.
For practical devices alpha typically extends from 0.90 to 0.998,
with most values approaching the high end of the range.
Alpha (α)
The ac alpha is formally called the common-base , short-circuit ,

amplification factor.
Voltage gain in
CB
configuration
AV = Vout/Vin = (ICRL) / (IERin)

•This configuration provides voltage gain but no current gain.
•Being VCB constant, with a small increase in the Emitter-base voltage VEB, Emitter
current IE gets increased.
•Emitter Current IE is independent of Collector voltage VCB.
•Collector Voltage VCB can affect the collector current IC only at low voltages, when
VEB is kept constant.
Characteristics •The input resistance Ri is the ratio of change in emitter-base voltage ΔVEB to the
change in emitter current ΔIE at constant collector base voltage VCB.
of CB η=ΔVEB/ΔIE, at constant VCB
•As the input resistance is of very low value, a small value of VEB is enough to
configuration produce a large current flow of emitter current IE.
•The output resistance Ro is the ratio of change in the collector base voltage ΔVCB
to the change in collector current ΔIC at constant emitter current IE.
Ro= ΔVCB / ΔIC at constant lE
As the output resistance is of very high value, a large change in VCB produces a
very little change in collector current IC.
•This Configuration provides good stability against increase in temperature.
•The CB configuration is used for high frequency applications.
CE
Configuration
CE
Characteristics
CE
Characteristics
For linear (least distortion) amplification purposes, cutoff for the common-
emitter configuration will be defined by IC =I CEO .
• Where IC and IB are determined at a particular operating point on the
characteristics.
• For practical devices the level of β typically ranges from about 50 to over 400,
with most in the midrange.
Beta (β)
• The formal name for βac is common-emitter , forward-current ,

amplification factor.
!
α and β 1 1
1
!
#
and !
#$
! 1
%!
!
!
! 1
•This configuration provides good current gain and voltage gain.
•Keeping VCE constant, with a small increase in VBE the base
current IB increases rapidly than in CB configurations.
•For any value of VCE above knee voltage, IC is approximately equal to
βIB.
Characteristics •The input resistance Ri is the ratio of change in base emitter
voltage ΔVBE to the change in base current ΔIB at constant collector
of CE emitter voltage VCE.
configuration Ri=ΔVBE/ΔIB at constant VCE
As the input resistance is of very low value, a small value of VBE is
enough to produce a large current flow of base current IB.
•The output resistance Ro is the ratio of change in collector emitter
voltage ΔVCE to the change in collector current ΔIC at constant IB.
Ro=ΔVCE/ΔIC at constant IB
As the output resistance of CE circuit is less than that of CB circuit.
•This configuration is usually used for bias stabilization methods and
audio frequency applications.
Breakdown
region
Common
Collector
Configuration
Also know as, Emitter follower configuration, it provides

a high input impedance and a low output impedance.
• This configuration provides current gain but no voltage gain.
• In CC configuration, the input resistance is high and the output
resistance is low.
• The voltage gain provided by this circuit is less than 1.
Characteristics • The sum of collector current and base current equals emitter
of CC current.
• The input and output signals are in phase.
configuration
• This configuration works as non-inverting amplifier output.
• This circuit is mostly used for impedance matching. That means,
to drive a low impedance load from a high impedance source.

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Electronic Devices and

Construction 2. Base-collector junction - the depletion region at this junction is

•Common Base (CB) Configuration: no current gain but voltage gain

•Common Emitter (CE) Configuration: current gain and voltage gain

•Common Collector (CC) Configuration: current gain but no voltage gain

The ac alpha is formally called the common-base , short-circuit ,

AV = Vout/Vin = (ICRL) / (IERin)

• The formal name for βac is common-emitter , forward-current ,

Also know as, Emitter follower configuration, it provides

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