SMART PAPER-05

CLASS 12th

MARKING SCHEME: PHYSICS

PAPER-05
Q.No. VALUE POINTS/EXPECTED ANSWERS Marks Total
Marks
SECTION –A

1. F 1 1
(b)
8
2. (d) 1 1

3. (d) 1  1 1
4. (a) 1 1

5. (a) Repelled by both the poles. 1 1

6. (c) 0.19 V 1 1
7. (c) Resistance ( r ) 1 1
8. d E 1 1
(c) o
dt
9. (a) Zero 1 1
10. (c) n2 1 1
11. (d) 95 nm 1 1
12. (d) Independent of A 1 1
13. (c) 1 1

14. (b) it becomes a p-type semiconductor 1 1

15. (d) 0.01 eV 1 1
16. (d) Assertion (A) is false and Reason (R ) is also false. 1 1
17. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct 1 1
explanation of Assertion (A).
18. (b) Both Assertion (A) and Reason ( R ) are true but reason ( R) is the not 1 1
correct explanation of the Assertion (A)
SECTION-B
3

1
19.

Calculation of acceleration of alpha particle 2

  
F=q(v×B) ½

= q(3 105 i  (0.4i  0.3 j )) N


F = q (0.9  105 k ) N ½
 
F = m a = q (0.9  105 k)N
 q ½
a  (0.9  105 k )ms 2
m
= 4.8 × 107 ×0.9 ×105 k ms-2
½
= 4.32 × 1012 k ms-2 2
Note: Deduct ½ mark if a student does not mention the direction of
acceleration.
20.
Identification 1
Justification 1

Induced electric field due to changing magnetic field is easily observed. 1

Induced electric field due to changing magnetic field can be easily produced
by various ways like rotating/moving a coil in magnetic field, changing the
shape of coil in magnetic field, bringing bar magnet near a coil etc. 1 2
21. (a)
Ray diagram 1
Proof of Snell’s law of refraction 1

AB is incident wave front, incident at an angle i. Let  be time taken by the

wave front to travel distance BC.
BC= v1 τ where v1 is speed of wave in medium 1.
To determine shape of refracted wave front, we draw a sphere of radius
v2 τ, where v2 is speed of wave in medium 2.
CE represents a tangent drawn from point C on sphere, CE is the refracted
wave front.
BC v1 ½
sin i = 
AC AC
AE v 2
sin r = 
AC AC

4
2
 sin i v
= 1 = n21 ½
sin r v2

Note: Give full credit if student derives Snell’s law by taking incident
wavefront in denser medium.

OR
(b)

Reason for preferring reflecting type telescope over refracting

telescope ½+½
Justification ½+½

1
No Chromatic Aberration - No refraction in mirrors
2
No Spherical Aberration - Due to use of parabolic reflector
3
Easy mechanical support required - Mirrors weigh less and can be
supported over entire back surface.
4 High resolving power – Due to Mirror with large diameter. 1+1 2
5 Brighter image – Large mirrors gather more light waves.
(Any two)

22.
Finding the ratio of maximum and minimum intensities 2

I max ( I1  I 2 ) 2
= ½
I min ( I1  I 2 ) 2

I1  I 2  2 I1 I 2
= ½
I1  I 2  2 I1 I 2
5I  4 I ½
=
5I  4 I
9
= ½
1
Alternatively
I1 a 2 4 I 4
  
I2 b2 I 1 ½
a 2

b 1 ½

3
 I max (a  b)2
 ½
I min (a  b) 2

I max (2  1)2 9
 =
I min (2  1) 2 1 ½ 2

23.
Calculation of potential energy of electron 1
Calculation of kinetic energy of electron 1

13.6
En = eV = Total energy
n2
For third excited state n=4
13.6 13.6
E4 = 2
= = -0.85 eV ½
4 16
Potential Energy = 2  Total Energy = 2  E4
= 2  (-0.85) eV
= - 1.70 eV ½
Kinetic energy = - (Total Energy) = -E4 ½
= 0.85 eV ½ 2
24. (a)

Difference between intrinsic and extrinsic semiconductor 2

Intrinsic semiconductor Extrinsic semiconductor

1. Pure semiconductor. Semiconductor is Doped with
impurities.

2. Low conductivity at room High conductivity at room

temperature. temperature. 1+1
3. ne = nh n e  nh
(Any one)
Note: Give full credit if a student writes any other relevant correct answer.
OR
(b)
Circuit diagram for forward and reverse biased p-n junction diode
½+½
V-I characteristic (Forward and Reverse bias) ½+½

4
 ½+½

Forward Bias Reverse Bias

½+½

2
Characteristics of silicon Diode

25.
Formation of potential barrier 2

The diffusion current due to concentration gradient at the junction forms a

space charge region consisting of immobile charge carriers. Due to this an
electric field is generated at the junction giving rise to drift current in a
direction opposite to diffusion current.
The potential at which diffusion current becomes equal to drift current is
called potential barrier. 2 2
SECTION –C
26.
a) Finding electric potential at the centre 1
Finding electric field at the centre 1
b) Finding electric potential at the centre 1

(a)
Electric potential due to point charge
kq ½
V=
R
Value of each charge = - q , Total charge = -12q
k ( 12q )
Total potential V =
R
12kq 12q
V = = ½
R 4 0 R
By symmetry the resultant of all electric field vectors becomes zero. 1
So electric field is zero.

5
 (b)
Electric potential is a scalar quantity and does not depend on placement of
charges
12kq 12q 1
Therefore V= = 3
R 4 0 R
27. (a)

Difference between resistance and impedance 1

Obtaining expression for impedance 2

1. Resistance is the opposition offered to both alternating current and direct

current while impedance is the opposition offered to alternating current only.

2. Resistance is independent of frequency of source while impedance

depends on frequency.

3. Resistance is opposition offered by material of the conductor while 1

impedance is combined opposition offered by different electrical
components such as resistor, inductor or capacitor.

(Any One)
(Note: Give credit of this part if a student writes any other correct answer.)

VR = imR , Vc = im Xc , VL = imXL ½
im = Peak value of current in the circuit.
   
VL VR  VC  Vm
(Vm)2 = VR2 + (VC – VL)2
= ( imR)2 + (imXc - imXL)2 ½
= im [R2 + (Xc – XL)2]
Vm
im =
R  ( X c  X L )2
2

V ½
im = m where Z = R 2  ( X c  X L )2
Z = impedance

6
 OR
(b)
Finding condition for resonance 1
Factors affecting resonant frequency 1
Graph 1

½
Z= R 2  ( X L  X c )2
For maximum current, Z should be minimum therefore to minimize Z
XL = XC ½

Alternatively
½
XL = XC
1
ωL =
C
1 ½
ωr =
LC

Resonant Frequency depends on value of Inductance and Capacitance

½+½

28.
Finding
a) Induced emf 2
b) Mutual inductance between solenoid and coil 1

a) magnetic field produced in the solenoid near the center

B= o nI ½
Flux linked with the coil wound over solenoid
 = NBA= N πr2 B
= N πr2 o nI ½
d dI ½
Induced emf e = = -πr2 Nnμo (i)
dt dt
2
= - μoπr nN Ioω cos ωt ½

7
 dI ½
b) comparing Eq (i) with e =  M
dt
M = μoπr2nN ½
3
29.
Explanation of emission of electron 1
a) variation of photocurrent with collector plate potential for
different intensity 1
b) variation of photo current with intensity of incident radiation 1

According to Einstein’s photoelectric equation

An electron absorbs a quantum of energy ‘hυ’ of incident radiation. If the
energy of absorbed quantum exceeds the minimum energy needed by the
electron to escape from the metal surface (work function φo ), the electron is 1
emitted.

Kmax = hυ - φo

a)

b)

1 3

10

8
30.
a)
Energy level diagram for hydrogen atom 1½
Transitions corresponding to ultraviolet region, visible region and
infrared region ½+½+½

1½

Note: Award 1 ½ mark for energy level diagram if the student does not show
the transitions.
OR
b)

Diagram to show variation 1

Two features of diagram ½+½
Reason for nuclear fusion 1

(Note: Award full credit even if a student does not mark so many elements
and does not mention the values of Ebn.)

Features of diagram (any two)

1. Binding energy per nucleon is practically independent of atomic number
for nuclei of middle mass number (30 <A < 170)
2. The curve has maximum of about 8.75 MeV for A= 56 and has a value of
7.6 MeV for A= 238
3. Binding energy per nucleon is lower for both light nuclei (A<30) and
heavy nuclei (A>170) ½+½

Two lighter nuclei fuse together to form heavier nuclei as the binding energy
per nucleon of fused heavier nuclei is more than the binding energy per
nucleon of the lighter nuclei. Thus the final system is more tightly bound

11

9
 than initial system.
Alternatively
To attain the stability 1
3
SECTION –D
31. (a)

i) Statement of coulomb’s law and vector form 1+1

ii) Explanation of Gauss’s law based on coulomb’s law 1
iii) Force exerted by charge A on charge B 2

i) Force between two point charges varies inversely with the square of
distance between the charges and is directly proportional to the product of 1
magnitude of the two charges and acts along the line joining the two charges.

Alternatively

 1 q1q2 

F12  r12
4 o r12 3

Where r12 is a vector from charge q2 to charge q1.
ii) In derivation of Gauss’s law, flux is calculated using Coulomb’s law and
1
surface area. Here coulomb’s law involves 2 factor and surface area
r 1
involves r2 factor. When product is taken, the two factors cancel out and flux
becomes independent of r.
iii)

 
r  AB  ai  a j
 ½
r = AB  a 2  a 2  2a
 1 q1q2 
F r
4 o r 2

12

10
 1 q  2 q ( ai  a  j)
F  
4 o ( 2 a ) 2
2a
½
 1 
2 q (i  j )
2 
F  2
4 o 2a 2
 1 q 2
F   (i  j)
4 o 2a 2

 q2
F (i   j) ½
4 2 o a 2

Note: Award 1 mark if a student calculates the magnitude of force only.

 1 q2
F 
4 o a 2

Alternatively
Give full credit if a student uses component method to solve the question.
OR
(b)
i) Derivation of electric field 2
ii) Effect on electric field 1
iii) Finding magnitude and direction of electric field 2

i)

q 1
E+q =  2
4 o r  a 2
q 1
E-q =  2
4 o r  a 2
½
The components normal to dipole axis cancel away. The components along
the dipole axis add up.
½
Total electric field is opposite to dipole moment.

13

11
 
p
= ½
4 o ( r 2  a 2 )3/ 2
Deduct ½ mark if the expression of electric field is not in vector form.
ii) At far off point r >> a

 p
E
4 o r 3
When distance is halved.

 p
E
r ½
4 o ( )3
2

8 p
=
4 o r 3
 ½
E becomes 8 times

iii)

p1  q  2Cm (along OA)

p2  q  2 Cm (along OD)
pnet  p12  p2 2 ½
= 2 2 q Cm
Electric field at centre O
kp
E = 2 net2 3/2
(r +a ) ½
at point O, r = 0 , a = 1 m
k  2 2q 2 2q
E  2 2kq  ½
13
4 o
Along DC ½

14

12
Alternatively

kq ½
E=
r2
AC= BD= 2m
r = OA =OB= OC=OD=1m
Electric field at O due to charges at B and D
E1 = EB+ ED
kq kq
E1 = 2  2 along OB
1 1 ½
= 2kq
Electric field at O due to charges at A and C
E2 = EA+ EC
kq kq
E2 = 2  2
1 1 ½
= 2kq along OC
Enet = E12  E2 2
2 2q
= 2 2 kq =
4 o ½

Along DC

Alternatively

Considering AB as dipole, electric field at O

2kq  a 2kqa ½
E1 =   2kqa
1 1 1 1
(( ) 2  ( )2 )3/2 (  )3/2
2 2 2 2
Similarly considering DC as another dipole, electric field at O

15
13
 2 kq  a 2 kq a
E2 =   2 kqa
1 2 1 2 3/2 1 1 3/2
(( ) ( ) ) (  ) ½
2 2 2 2
1 1
Enet = E1+ E2 = 4kqa=  4 q ½
4 o 2
2 2q ½
= 2 2 kq 
4 o
Along DC

32. (a)

i) Statement of Biot-Savart’s law 1

Expression for magnetic field 2
Diagram for magnetic field lines ½
ii) Finding current by revolving electron 1½
(i)
The magnetic field at a point due to a current carrying element is
proportional to magnitude of current, element length and inversely 1
proportional to the square of the distance from the element.
 
  dl  r
dB  o
I 3
4 r
o Idl sin 
dB 
4 r2

Consider a circular coil of radius a carrying current I.

According to Biot-Savart’s law

  Idl sin 

dB  o ½
4 r2
 
At point A I dl  a

16
14
  90o ,sin 90o  1
 Idl
Hence dB= o 2
4 a
Magnetic field at centre
2 a 2 a
 Idl ½
B=  dB   o 2
o 0
4 a
o I
B=   2 a
4 a 2
o I ½
B=
2a
Note: Give full credit of 2 marks if a student derives the expression for
magnetic field at the axis of the loop and then puts the distance of point as 0
from the centre.

ii) q=e , v=107 ms -1 ,r=10-10 m

q
i=
T ½
qv
=
2πr
ev
=
2πr
½
1.6 1019  107
=
2   1010

0.8
=  102 A
 ½
= 0.255 102 A = 2.55 mA

OR
b)
i) Derivation of expression for force 2
Statement of Rule ½
Conditions for maximum and minimum force ½+½
ii) Calculation of magnitude of force 1½

Consider a rod of uniform cross sectional area A and length l. Let the
number density of mobile charge carriers in it be n.
Thus the total number of mobile charge carriers in it is n l A.
 ½
For steady current I, drift velocity of electrons vd , in the presence of

17

15
 
external magnetic field B , the force on these carriers is
   ½
F=n l Aq(vd ×B)
 
=  jAl   B ½
 
= I (l  B ) ½
  
Where nqvd is current density ( j ) and jA is current (I)
Fleming’s left hand Rule: If forefinger, middle finger and thumb are
stretched in mutually perpendicular directions, such that forefinger indicates
the direction of magnetic field, middle finger indicates the direction of
current in the conductor, then thumb indicates the direction of force on the
conductor.
Alternatively

Right Hand Thumb Rule : If the fingers of right hand are made to rotate from
  ½
l to B through angle θ, the thumb points in the direction of force on the
current carrying conductor.
Condition for maximum force  = 900

F  I l B sin  = I l B ½
Condition for minimum force  = 0o or 1800

F =0 ½

ii)

 o 2 I1 I 2
F= l
4 d ½
107  2  5  2.5
= 2
 10  102 N ½
2.5 10
= 10-5 N
½ 5

18
16
33. a)

i) (1) Difference between interference pattern and 1+1

diffraction pattern
(2) Two factors affecting fringe width in young’s double ½ + ½
slit experiment
ii) (1) calculation of angular separation 1
(2) calculation of distance between two maxima 1

(i) (1)
(a) The interference pattern has a number of equally spaced bright and dark
bands while diffraction pattern has a central bright maximum which is twice
as wide as the other maxima.
(b) Interference pattern is obtained by superposing two waves originating
from two narrow slits, while diffraction pattern is a superposition of a
continuous family of waves originating from each point on a single slit.
(c) The maxima in interference pattern is obtained at angle  / a , while the
first minima is obtained at same angle  / a for diffraction pattern.
(d) In interference pattern the intensity of bright fringes remain same while 1+1
in diffraction the intensity falls as we go to successive maxima away from
the center on either side.
(any two)

(2) Factors affecting fringes width

Wave length (  ) / distance of screen from slits (D) / separation between ½+½
slits (d).
(any two)
(ii) (1) d sin  = n  ½
n=1

sin  =
d
 1
For small angle sin    = = radian. ½
100 100

D ½
(2)  = = D
d
1
= 50  102
100
= 50 104 m
= 5 mm ½
OR
(b)
i) Derivation of relation between u and v 3
ii) Finding apparent position 2

19
17
 1

Assume that the aperture of the surface is small as compared to other

distance involved, so that small angle approximation can be made.
For small angles
for NOC , i is the exterior angle
 i = NOM  NCM
MN MN ½
i=  (i)
OM MC
Similarly r = NCM  NIM
MN MN
=  (ii)
MC MI
By Snell’s law
n1sin i = n2 sin r
for small angles ½
n1 i = n2 r

substituting i and r from (i) and (ii) we get

n1 n n n
 2  2 1 ½
OM MI MC
Applying Cartesian coordinates
OM= -u, MI= + v , MC= +R
n2 n1 n2  n1
  ½
v u R

n2 n1 n2  n1
(ii)  
v u R
R= - 6 cm, u = - 3cm , n1 =1.5 n2 = 1
1 1.5 1  1.5 ½
 
v 3 6
1 0.5 1.5
 
v 6 3 ½
1 0.5  3
 ½
v 6
1 2.5

v 6
½
v = - 2.4 cm
5
from the left surface inside the sphere

20
18
 SECTION -E
34.
a) Points at same potential 1
b) Current through arm bg 1
c) Potential difference across R3
OR
c) Power dissipated in R2 2
a) Points (a, b, c)
(d, e)
(j, f, g ,h)
are at same potential 1

Note: Give full credit if a student mentions any two points at same potential
from the above.
b)

According to Kirchhoff’s loop rule

for closed loop abgha
- 6 + 10 I2 + I1 = 0
I1 + 10 I2 = 6 (i)
for closed loop acfha
- 6 + 10 (I1 – I2 ) +I1 = 0
11 I1-10 I2 = 6 (ii)
½
Adding (i) and (ii)
12 I1 = 12
I1 = 1 A
I2 = 0.5 A
½
= current through arm bg
Note: Award 1 mark if a student calculates the current by any other method.

c) VR3 = (I1-I2)  R3
1
= 0.5  5
= 2.5 V
1
OR
(c ) P = (I1-I2) 2  R2 = (0.5)2  5
1
= 1.25 W
1
4

21
19
35.
a) Tracing of path of ray 1
b) Finding velocity of light 1
c) Explanation of two application of TIR 2
OR
c) Definition of TIR 1
Mentioning two conditions of TIR ½+½
a)

From fig. angle of incidence on second face i = 600

critical angle ic = 24.5o
(i )  (ic )
 TIR takes place

c
b) n=
v
c 3  108
v= = = 1.24  108 m/s
n 2.41 1

c) Optical Fibre / Brilliance of diamond / mirage (any two)

Note: Give full credit if students mention the names of applications only. 1+1

OR

c) When light travels from optically denser medium to rarer medium at an

interface and gets reflected back into the same medium the phenomenon is
called as total internal reflection. 1

Conditions for TIR

1. Light must travel from optically denser medium to rarer medium.
2. Angle of incidence at the interface must be greater than the critical angle
for the pair of media. ½+½
4

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