SN74LVC1T45

SCES515N – DECEMBER 2003 – REVISED JUNE 2024

SN74LVC1T45 Single-Bit Dual-Supply Bus Transceiver With Configurable Voltage

Translation and 3-State Outputs
1 Features 3 Description
• ESD protection exceeds JESD 22: This single-bit noninverting bus transceiver uses two
– 2000V Human-Body Model (A114-A) separate configurable power-supply rails. The A port
– 200V Machine Model (A115-A) is designed to track VCCA. VCCA accepts any supply
– 1000V Charged-Device Model (C101) voltage from 1.65V to 5.5V. The B port is designed
• Available in the Texas Instruments NanoFree™ to track VCCB. VCCB accepts any supply voltage from
package 1.65V to 5.5V. This allows for universal low-voltage
• Fully configurable dual-rail design allows each port bidirectional translation between any of the 1.8V, 2.5V,
to operate over the full 1.65V to 5.5V power-supply 3.3V, and 5V voltage nodes.
range The SN74LVC1T45 is designed for asynchronous
• VCC isolation feature – if either VCC input is at communication between two data buses. The logic
GND, both ports are in the high-impedance state levels of the direction-control (DIR) input activate
• DIR input circuit referenced to VCCA either the B-port outputs or the A-port outputs. The
• Low power consumption, 4µA maximum ICC device transmits data from the A bus to the B bus
• ±24mA output drive at 3.3V when the B-port outputs are activated and from the
• Ioff supports partial-power-down mode operation B bus to the A bus when the A-port outputs are
• Maximum data rates activated. The input circuitry is always active on both
– 420Mbps (3.3V to 5V translation) A and B ports and must have a logic HIGH or LOW
– 210Mbps (translate to 3.3V) level applied to prevent excess ICC and ICCZ.
– 140Mbps (translate to 2.5V)
– 75Mbps (translate to 1.8V) The SN74LVC1T45 is designed so that the DIR input
• Latch-up performance exceeds 100mA per JESD is powered by VCCA. This device is fully specified
78, Class II for partial-power-down applications using Ioff. The Ioff
circuitry disables the outputs, preventing damaging
2 Applications current backflow through the device when it is
powered down. The VCC isolation feature is designed
• Personal electronic
so that if either VCC input is at GND, then both ports
• Industrial
are in the high-impedance state.
• Enterprise
• Telecom NanoFree™ package technology is a major
breakthrough in IC packaging concepts, using the die
Functional Block Diagram as the package.
Package Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2)

5 DRL (SOT, 6) 1.6mm × 1.6mm

DIR
DBV (SOT-23, 6) 2.9mm × 2.8mm
SN74LVC1T45 DCK (SC70, 6) 2mm × 2.1mm
3
A DPK (USON, 6) 1.6mm × 1.6mm
YZP (DSBGA, 6) 1mm × 0.5mm
4
B (1) For more information, see Section 11.
(2) The package size (length × width) is a nominal value and
includes pins, where applicable.
VCCA VCCB

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1 7.2 Functional Block Diagram......................................... 13
2 Applications..................................................................... 1 7.3 Feature Description...................................................13
3 Description.......................................................................1 7.4 Device Functional Modes..........................................14
4 Pin Configuration and Functions...................................2 8 Applications and Implementation................................ 15
5 Specifications.................................................................. 4 8.1 Application Information............................................. 15
5.1 Absolute Maximum Ratings........................................ 4 8.2 Typical Application.................................................... 15
5.2 ESD Ratings............................................................... 4 8.3 Power Supply Recommendations.............................17
5.3 Recommended Operating Conditions.........................4 8.4 Layout....................................................................... 17
5.4 Thermal Information....................................................5 9 Device and Documentation Support............................19
5.5 Electrical Characteristics.............................................6 9.1 Documentation Support............................................ 19
5.6 Switching Characteristics (VCCA = 1.8V ± 0.15V)....... 7 9.2 Receiving Notification of Documentation Updates....19
5.7 Switching Characteristics (VCCA = 2.5V ± 0.2V)......... 7 9.3 Support Resources................................................... 19
5.8 Switching Characteristics (VCCA = 3.3V ± 0.3V)......... 8 9.4 Trademarks............................................................... 19
5.9 Switching Characteristics (VCCA = 5V ±0.5V)............. 8 9.5 Electrostatic Discharge Caution................................19
5.10 Operating Characteristics......................................... 9 9.6 Glossary....................................................................19
5.11 Typical Characteristics............................................ 10 10 Revision History.......................................................... 19
6 Parameter Measurement Information.......................... 12 11 Mechanical, Packaging, and Orderable
7 Detailed Description......................................................13 Information.................................................................... 20
7.1 Overview................................................................... 13

4 Pin Configuration and Functions

Figure 4-2. DCK Package, 6-Pin SC70 (Top View)

Figure 4-1. DBV Package, 6-Pin SOT-23 (Top View)

Figure 4-3. DRL Package, 6-Pin SOT (Top View) Figure 4-4. DPK Package, 6-Pin USON (Top View)

Table 4-1. Pin Functions

PIN
DBV, DCK, DRL, TYPE(1) DESCRIPTION
NAME
DPK
VCCA 1 P SYSTEM-1 supply voltage (1.65V to 5.5V)
GND 2 G Device GND
A 3 I/O Output level depends on VCC1 voltage.
B 4 I/O Input threshold value depends on VCC2 voltage.
DIR 5 I GND (low level) determines B-port to A-port direction.
VCCB 6 P SYSTEM-2 supply voltage (1.65V to 5.5V)

(1) P = power, G = ground, I/O = input and output, I = input

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1 2

C A B

B GND DIR

A V V
CCA CCB

Not to scale

Figure 4-5. YZP Package, 6-Pin DSBGA (Bottom View)

Legend
Power Input
Input or Output Ground

Table 4-2. Pin Functions

PIN
TYPE(1) DESCRIPTION
NO. NAME
A1 VCCA P SYSTEM-1 supply voltage (1.65V to 5.5V)
A2 VCCB P SYSTEM-2 supply voltage (1.65V to 5.5V)
B1 GND G Device GND
B2 DIR I GND (low level) determines B-port to A-port direction.
C1 A I/O Output level depends on VCC1 voltage.
C2 B I/O Input threshold value depends on VCC2 voltage.

(1) P = power, G = ground, I/O = input and output, I = input

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5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCCA
Supply voltage –0.5 6.5 V
VCCB
VI Input voltage(2) –0.5 6.5 V
VO Voltage range applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V

Voltage range applied to any output in the high or low A port –0.5 VCCA + 0.5
VO V
state(2) (3) B port –0.5 VCCB + 0.5
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

5.2 ESD Ratings

VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 V
Machine Model ±200

(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

See (1) (2) (3)
VCCI VCCO MIN MAX UNIT
VCCA 1.65 5.5
Supply voltage V
VCCB 1.65 5.5
1.65 o 1.95V VCCI × 0.65

High-level 2.3 to 2.7V 1.7

VIH Data inputs(4) V
input voltage 3 to 3.6V 2
4.5 to 5.5V VCCI × 0.7
1.65 o 1.95V VCCI × 0.35

Low-level 2.3 to 2.7V 0.7

VIL Data inputs(4) V
input voltage 3 to 3.6V 0.8
4.5 to 5.5V VCCI × 0.3
1.65 to 1.95V VCCA × 0.65

High-level DIR 2.3 to 2.7V 1.7

VIH V
input voltage (referenced to VCCA)(5) 3 to 3.6V 2
4.5 to 5.5V VCCA × 0.7

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5.3 Recommended Operating Conditions (continued)

See (1) (2) (3)
VCCI VCCO MIN MAX UNIT
1.65 to 1.95V VCCA × 0.35

Low-level DIR 2.3 to 2.7V 0.7

VIL V
input voltage (referenced to VCCA)(5) 3 to 3.6V 0.8
4.5 to 5.5V VCCA × 0.3
VI Input voltage 0 5.5 V
VO Output voltage 0 VCCO V
1.65 to 1.95V –4
2.3 to 2.7V –8
IOH High-level output current mA
3 to 3.6V –24
4.5 to 5.5V –32
1.65 to 1.95V 4
2.3 to 2.7V 8
IOL Low-level output current mA
3 to 3.6V 24
4.5 to 5.5V 32
1.65 to 1.95V 20
2.3 to 2.7V 20
Input transition Data inputs
Δt/Δv 3 to 3.6V 10 ns/V
rise or fall rate
4.5 to 5.5V 5
Control inputs 1.65 to 5.5V 5
TA Operating free-air temperature –40 85 °C

(1) VCCI is the VCC associated with the input port.

(2) VCCO is the VCC associated with the output port.
(3) All unused data inputs of the device must be held at VCCI or GND to ensure proper device operation. See the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
(4) For VCCI values not specified in the data sheet, VIH min = VCCI × 0.7V, VIL max = VCCI × 0.3V.
(5) For VCCI values not specified in the data sheet, VIH min = VCCA × 0.7V, VIL max = VCCA × 0.3V.

5.4 Thermal Information

SN74LVC1T45
DBV DCK DPK DRL YZP
THERMAL METRIC(1) UNIT
(SOT-23) (SC70) (USON) (SOT) (DSBGA)
6 PINS
RθJA Junction-to-ambient thermal resistance 215.1 210.9 278.3 223.7 131.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 136.5 139.2 133.4 88.7 1.3 °C/W
RθJB Junction-to-board thermal resistance 96.6 72 174.1 58.4 22.6 °C/W
ψJT Junction-to-top characterization parameter 71.5 54.9 23.4 5.9 5.2 °C/W
ψJB Junction-to-board characterization parameter 96.3 71.7 173.5 58.1 22.6 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

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5.5 Electrical Characteristics

over recommended operating free-air temperature range, TA = –40 to +85°C (unless otherwise noted)(1) (2)
PARAMETER TEST CONDITIONS VCCA VCCB MIN TYP MAX UNIT
IOH = –100μA 1.65 to 4.5V 1.65 to 4.5V VCCO – 0.1
IOH = –4mA 1.65V 1.65V 1.2
VOH IOH = –8mA VI = VIH 2.3V 2.3V 1.9 V
IOH = –24mA 3V 3V 2.4
IOH = –32mA 4.5V 4.5V 3.8
IOL = 100μA 1.65 to 4.5V 1.65 to 4.5V 0.1
IOL = 4mA 1.65V 1.65V 0.45
VOL IOL = 8mA VI = VIL 2.3V 2.3V 0.3 V
IOL = 24mA 3V 3V 0.55
IOL = 32mA 4.5V 4.5V 0.55
TA = 25 °C ±1
II DIR VI = VCCA or GND 1.65 to 5.5V 1.65 to 5.5V TA = –40 to μA
±2
+85°C
TA = 25 °C ±1
A port 0V 0 to 5.5V TA = –40 to
±2
+85°C
Ioff VI or VO = 0 to 5.5V μA
TA = 25 °C ±1
B port 0 to 5.5V 0V TA = –40 to
±2
+85°C
TA = 25 °C ±1
A or B
IOZ VO = VCCO or GND 1.65 to 5.5V 1.65 to 5.5V TA = –40 to μA
port ±2
+85°C
1.65 to 5.5V 1.65 to 5.5V 3
ICCA VI = VCCI or GND, IO = 0 5.5V 0V 2 μA
0V 5.5V –2
1.65 to 5.5V 1.65 to 5.5V 3
ICCB VI = VCCI or GND, IO = 0 5.5V 0V –2 μA
0V 5.5V 2
ICCA + ICCB
V = VCCI or GND, IO = 0 1.65 to 5.5V 1.65 to 5.5V 4 μA
(see Table 7-1) I
A port at VCCA – 0.6V,
A port 50
DIR at VCCA, B port = open
ΔICCA DIR at VCCA – 0.6V, 3 to 5.5V 3 to 5.5V μA
DIR B port = open, 50
A port at VCCA or GND
B port at VCCB – 0.6V,
ΔICCB B port DIR at GND, 3 to 5.5V 3 to 5.5V 50 μA
A port = open
Ci DIR VI = VCCA or GND 3.3V 3.3V TA = 25 °C 2.5 pF
A or B
Cio VO = VCCA/B or GND 3.3V 3.3V TA = 25 °C 6 pF
port

(1) VCCO is the VCC associated with the output port.

(2) VCCI is the VCC associated with the input port.

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5.6 Switching Characteristics (VCCA = 1.8V ± 0.15V)

over recommended operating free-air temperature range, VCCA = 1.8V ± 0.15V (see Figure 6-1)
VCCB = 1.8V VCCB = 2.5V VCCB = 3.3V VCCB = 5V
FROM TO ±0.15V ±0.2V ±0.3V ±0.5V
PARAMETER UNIT
(INPUT) (OUTPUT)
MIN MAX MIN MAX MIN MAX MIN MAX
tPLH 3 17.7 2.2 10.3 1.7 8.3 1.4 7.2
A B ns
tPHL 2.8 14.3 2.2 8.5 1.8 7.1 1.7 7
tPLH 3 17.7 2.3 16 2.1 15.5 1.9 15.1
B A ns
tPHL 2.8 14.3 2.1 12.9 2 12.6 1.8 12.2
tPHZ 5.2 19.4 4.8 18.5 4.7 18.4 5.1 17.1
DIR A ns
tPLZ 2.3 10.5 2.1 10.5 2.4 10.7 3.1 10.9
tPHZ 5.2 21.9 4.9 11.5 4.6 10.3 2.8 8.2
DIR B ns
tPLZ 4.2 16 3.7 9.2 3.3 8.4 2.4 6.4
tPZH (1) 33.7 25.2 23.9 21.5
DIR A ns
tPZL (1) 36.2 24.4 22.9 20.4
tPZH (1) 28.2 20.8 19 18.1
DIR B ns
tPZL (1) 33.7 27 25.5 24.1

(1) The enable time is a calculated value, derived using the formula shown in the Enable Times section.

5.7 Switching Characteristics (VCCA = 2.5V ± 0.2V)

over recommended operating free-air temperature range, VCCA = 2.5V ± 0.2V (see Figure 6-1)
VCCB = 1.8V VCCB = 2.5V VCCB = 3.3V VCCB = 5V
FROM TO ±0.15V ±0.2V ±0.3V ±0.5V
PARAMETER UNIT
(INPUT) (OUTPUT)
MIN MAX MIN MAX MIN MAX MIN MAX
tPLH 2.3 16 1.5 8.5 1.3 6.4 1.1 5.1
A B ns
tPHL 2.1 12.9 1.4 7.5 1.3 5.4 0.9 4.6
tPLH 2.2 10.3 1.5 8.5 1.4 8 1 7.5
B A ns
tPHL 2.2 8.5 1.4 7.5 1.3 7 0.9 6.2
tPHZ 3 8.1 3.1 8.1 2.8 8.1 3.2 8.1
DIR A ns
tPLZ 1.3 5.9 1.3 5.9 1.3 5.9 1 5.8
tPHZ 5.2 23.7 4.1 11.4 3.9 10.2 2.4 7.1
DIR B ns
tPLZ 3.9 18.9 3.2 9.6 2.8 8.4 1.8 5.3
tPZH (1) 29.2 18.1 16.4 12.8
DIR A ns
tPZL (1) 32.2 18.9 17.2 13.3
tPZH (1) 21.9 14.4 12.3 10.9
DIR B ns
tPZL (1) 21 15.6 13.5 12.7

(1) The enable time is a calculated value, derived using the formula shown in the Enable Times section.

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5.8 Switching Characteristics (VCCA = 3.3V ± 0.3V)

over recommended operating free-air temperature range, VCCA = 3.3V ± 0.3V (see Figure 6-1)
VCCB = 1.8V VCCB = 2.5V VCCB = 3.3V VCCB = 5V
FROM TO ±0.15V ±0.2V ±0.3V ±0.5V
PARAMETER UNIT
(INPUT) (OUTPUT)
MIN MAX MIN MAX MIN MAX MIN MAX
tPLH 2.1 15.5 1.4 8 0.7 5.8 0.7 4.4
A B ns
tPHL 2 12.6 1.3 7 0.8 5 0.7 4
tPLH 1.7 8.3 1.3 6.4 0.7 5.8 0.6 5.4
B A ns
tPHL 1.8 7.1 1.3 5.4 0.8 5 0.7 4.5
tPHZ 2.9 7.3 3 7.3 2.8 7.3 3.4 7.3
DIR A ns
tPLZ 1.8 5.6 1.6 5.6 2.2 5.7 2.2 5.7
tPHZ 5.4 20.5 3.9 10.1 2.9 8.8 2.4 6.8
DIR B ns
tPLZ 3.3 14.5 2.9 7.8 2.4 7.1 1.7 4.9
tPZH (1) 22.8 14.2 12.9 10.3
DIR A ns
tPZL (1) 27.6 15.5 13.8 11.3
tPZH (1) 21.1 13.6 11.5 10.1
DIR B ns
tPZL (1) 19.9 14.3 12.3 11.3

(1) The enable time is a calculated value, derived using the formula shown in the Enable Times section.

5.9 Switching Characteristics (VCCA = 5V ±0.5V)

over recommended operating free-air temperature range, VCCA = 5V ±0.5V (see Figure 6-1)
VCCB = 1.8V VCCB = 2.5V VCCB = 3.3V VCCB = 5V
FROM TO ±0.15V ±0.2V ±0.3V ±0.5V
PARAMETER UNIT
(INPUT) (OUTPUT)
MIN MAX MIN MAX MIN MAX MIN MAX
tPLH 1.9 15.1 1 7.5 0.6 5.4 0.5 3.9
A B ns
tPHL 1.8 12.2 0.9 6.2 0.7 4.5 0.5 3.5
tPLH 1.4 7.2 1 5.1 0.7 4.4 0.5 3.9
B A ns
tPHL 1.7 7 0.9 4.6 0.7 4 0.5 3.5
tPHZ 2.1 5.4 2.2 5.4 2.2 5.5 2.2 5.4
DIR A ns
tPLZ 0.9 3.8 1 3.8 0.7 3.7 0.7 3.7
tPHZ 4.8 20.2 2.5 9.8 1 8.5 2.5 6.5
DIR B ns
tPLZ 3.2 14.8 2.5 7.4 2.5 7 1.6 4.5
tPZH (1) 22 12.5 11.4 8.4
DIR A ns
tPZL (1) 27.2 14.4 12.5 10
tPZH (1) 18.9 11.3 9.1 7.6
DIR B ns
tPZL (1) 17.6 11.6 10 8.6

(1) The enable time is a calculated value, derived using the formula shown in the Enable Times section.

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5.10 Operating Characteristics

TA = 25°C
VCCA = VCCA = VCCA = VCCA =
TEST VCCB = 1.8V VCCB = 2.5V VCCB = 3.3V VCCB = 5V
PARAMETER UNIT
CONDITIONS
TYP TYP TYP TYP
A-port input, B-port output CL = 0 pF, 3 4 4 4
CpdA (1) f = 10 MHz, pF
B-port input, A-port output tr = tf = 1 ns 18 19 20 21

A-port input, B-port output CL = 0 pF, 18 19 20 21

CpdB (1) f = 10 MHz, pF
B-port input, A-port output tr = tf = 1 ns 3 4 4 4

(1) Power dissipation capacitance per transceiver

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5.11 Typical Characteristics

10 10

9 9

8 8

7 7

6 6

t PLH − ns
t PHL − ns

5 5

4 4

3 3

2 2

1 1

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35

CL − pF CL − pF

TA = 25°C, VCCA = 1.8V TA = 25°C, VCCA = 1.8V

Figure 5-1. Typical Propagation Delay (A to B) vs Load Figure 5-2. Typical Propagation Delay (B to A) vs Load
Capacitance Capacitance
10 10

9 9

8 8

7 7

6 t PLH − ns 6
t PHL − ns

5 5

4 4

3 3

2 2

1 1

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL − pF CL − pF

TA = 25°C, VCCA = 2.5V TA = 25°C, VCCA = 2.5V

Figure 5-3. Typical Propagation Delay (A to B) vs Load Figure 5-4. Typical Propagation Delay (B to A) vs Load
Capacitance Capacitance
10 10

9 9

8 8

7 7

6 6
t PHL − ns

t PLH − ns

5 5

4 4

3 3

2 2

1 1

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL − pF CL − pF

TA = 25°C, VCCA = 3.3V TA = 25°C, VCCA = 3.3V

Figure 5-5. Typical Propagation Delay (A to B) vs Load Figure 5-6. Typical Propagation Delay (B to A) vs Load
Capacitance Capacitance

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5.11 Typical Characteristics (continued)

10 10

9 9

8 8

7 7
t PHL − ns

t PLH − ns
6 6

5 5

4 4

3 3

2 2

1 1

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
CL − pF CL − pF

TA = 25°C, VCCA = 5V TA = 25°C, VCCA = 5V

Figure 5-7. Typical Propagation Delay (A to B) vs Load Figure 5-8. Typical Propagation Delay (B to A) vs Load
Capacitance Capacitance

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6 Parameter Measurement Information

2 × VCCO
TEST S1
RL S1 Open tpd Open
From Output
GND tPLZ/tPZL 2 × VCCO
Under Test
tPHZ/tPZH GND
CL RL
(see Note A)

LOAD CIRCUIT tw

VCCI
Input VCCI/2 VCCI/2
VCCO CL RL VTP 0V
1.8 V ± 0.15 V 15 pF 2 kΩ 0.15 V
VOLTAGE WAVEFORMS
2.5 V ± 0.2 V 15 pF 2 kΩ 0.15 V PULSE DURATION
3.3 V ± 0.3 V 15 pF 2 kΩ 0.3 V
5 V ± 0.5 V 15 pF 2 kΩ 0.3 V

Output VCCA
Control VCCA/2 VCCA/2
(low-level
enabling) 0V

tPZL tPLZ

Output VCCO
VCCI
Input VCCI/2 VCCI/2 Waveform 1 VCCO/2 VOL + VTP
S1 at 2 × VCCO VOL
0V
(see Note B)
tPLH tPHL tPZH tPHZ
Output
VOH
VOH Waveform 2 VOH − VTP
S1 at GND VCCO/2
Output VCCO/2 VCCO/2
(see Note B) 0V
VOL
VOLTAGE WAVEFORMS VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES ENABLE AND DISABLE TIMES

NOTES: A. CL includes probe and jig capacitance.

B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR v10 MHz, ZO = 50 Ω, dv/dt ≥ 1 V/ns.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. VCCI is the VCC associated with the input port.
I. VCCO is the VCC associated with the output port.
J. All parameters and waveforms are not applicable to all devices.

Figure 6-1. Load Circuit and Voltage Waveforms

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7 Detailed Description
7.1 Overview
The SN74LVC1T45 is a single-bit, dual-supply, noninverting voltage level transceiver. Pin A and the direction
control pin (DIR) are supported by VCCA and pin B is supported by VCCB. The A port is able to accept I/O
voltages ranging from 1.65V to 5.5V, while the B port can accept I/O voltages from 1.65V to 5.5V. The high on
the DIR allows data transmissions from A to B and a low on the DIR allows data transmissions from B to A.
7.2 Functional Block Diagram

5
DIR

3
A

4
B

VCCA VCCB

Figure 7-1. Logic Diagram (Positive Logic)

7.3 Feature Description

7.3.1 Fully Configurable Dual-Rail Design Allows Each Port to Operate Over the Full 1.65V to 5.5V
Power-Supply Range
Both VCCA and VCCB can be supplied at any voltage between 1.65V and 5.5V, making the device suitable for
translating between any of the voltage nodes (1.8V, 2.5V, 3.3V, and 5V).
7.3.2 Support High Speed Translation
The SN74LVC1T45 device supports high data rate applications. The translated signal data rate can be up to
420Mbps when the signal is translated from 3.3V to 5V.
7.3.3 Ioff Supports Partial Power-Down Mode Operation
The inputs and outputs for this device enter a high-impedance state when the device is powered down, inhibiting
current backflow into the device. The maximum leakage into or out of any input or output pin on the device is
specified by Ioff in the Electrical Charateristics.
7.3.4 Balanced High-Drive CMOS Push-Pull Outputs
A balanced output allows the device to sink and source similar currents. The high drive capability of this device
creates fast edges into light loads so impedance matching and load conditions should be considered to prevent
ringing. Additionally, the outputs of this device are capable of driving larger currents than the device can sustain
without being damaged. Two outputs can be connected together for a stronger output drive strength. The
electrical and thermal limits defined in the Absolute Maximum Ratings must be followed at all times.
7.3.5 Glitch-Free Power Supply Sequencing
Either supply rail may be powered on or off in any order without producing a glitch on the I/Os (that is, where
the output erroneously transitions to VCC when it should be held low or vice versa). Glitches of this nature can
be misinterpreted by a peripheral as a valid data bit, which could trigger a false device reset of the peripheral, a
false device configuration of the peripheral, or even a false data initialization by the peripheral.

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7.3.6 Vcc Isolation

The I/Os of both ports will enter a high-impedance state when either of the supplies are at GND, while the other
supply is still connected to the device. The maximum leakage into or out of any input or output pin on the device
is specified by Ioff in the Electrical Characteristics.
7.4 Device Functional Modes
Table 7-1. Function Table(1)
INPUT
OPERATION
DIR
L B data to A bus
H A data to B bus

(1) Input circuits of the data I/Os always are active.

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8 Applications and Implementation

Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.

8.1 Application Information

The SN74LVC1T45 device can be used in level-translation applications for interfacing devices or systems
operating at different interface voltages with one another. The maximum data rate can be up to 420Mbps when
device translates signals from 3.3V to 5V.
8.2 Typical Application
8.2.1 Unidirectional Logic Level-Shifting Application
Figure 8-1 shows an example of the SN74LVC1T45 being used in a unidirectional logic level-shifting application.

VCC1 VCC1 VCC2 VCC2

1 6
2 5
3 4

SYSTEM-1 SYSTEM-2

Figure 8-1. Unidirectional Logic Level-Shifting Application

8.2.1.1 Design Requirements

For this design example, use the parameters listed in Table 8-1.
Table 8-1. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
Input voltage range 1.65V to 5.5V
Output voltage range 1.65V to 5.5V

8.2.1.2 Detailed Design Procedure

To begin the design process, determine the following:
• Input voltage range
- Use the supply voltage of the device that is driving the SN74LVC1T45 device to determine the input voltage
range. For a valid logic high the value must exceed the VIH of the input port. For a valid logic low the value must
be less than the VIL of the input port.
• Output voltage range
- Use the supply voltage of the device that the SN74LVC1T45 device is driving to determine the output voltage
range.

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8.2.1.3 Application Curve

Figure 8-2. Translation Up (1.8V to 5V) at 2.5 MHz

8.2.2 Bidirectional Logic Level-Shifting Application

Figure 8-3 shows the SN74LVC1T45 being used in a bidirectional logic level-shifting application. Because the
SN74LVC1T45 does not have an output-enable (OE) pin, the system designer should take precautions to avoid
bus contention between SYSTEM-1 and SYSTEM-2 when changing directions.

VCC1 VCC1 VCC2

VCC2

Pullup/Down Pullup/Down
I/O-1 or Bus Hold(1) or Bus Hold(1) I/O-2
1 6
2 5
3 4

DIR CTRL

SYSTEM-1 SYSTEM-2

Figure 8-3. Bidirectional Logic Level-Shifting Application

8.2.2.1 Design Requirements

See Section 8.2.1.1.
8.2.2.2 Detailed Design Procedure
Table 8-2 shows data transmission from SYSTEM-1 to SYSTEM-2 and then from SYSTEM-2 to SYSTEM-1.
Table 8-2. SYSTEM-1 and SYSTEM-2 Data Transmission
STATE DIR CTRL I/O-1 I/O-2 DESCRIPTION
1 H Out In SYSTEM-1 data to SYSTEM-2
SYSTEM-2 is getting ready to send data to SYSTEM-1. I/O-1 and I/O-2 are disabled. The
2 H Hi-Z Hi-Z
bus-line state depends on pullup or pulldown.(1)
DIR bit is flipped. I/O-1 and I/O-2 still are disabled. The bus-line state depends on pullup or
3 L Hi-Z Hi-Z
pulldown.(1)
4 L In Out SYSTEM-2 data to SYSTEM-1

(1) SYSTEM-1 and SYSTEM-2 must use the same conditions, that is, both pullup or both pulldown.

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8.2.2.2.1 Enable Times

Calculate the enable times for the SN74LVC1T45 using the following formulas:
• tPZH (DIR to A) = tPLZ (DIR to B) + tPLH (B to A)
• tPZL (DIR to A) = tPHZ (DIR to B) + tPHL (B to A)
• tPZH (DIR to B) = tPLZ (DIR to A) + tPLH (A to B)
• tPZL (DIR to B) = tPHZ (DIR to A) + tPHL (A to B)
In a bidirectional application, these enable times provide the maximum delay from the time the DIR bit is
switched until an output is expected. For example, if the SN74LVC1T45 initially is transmitting from A to B, then
the DIR bit is switched; the B port of the device must be disabled before presenting it with an input. After the
B port has been disabled, an input signal applied to it appears on the corresponding A port after the specified
propagation delay.
8.2.2.3 Application Curve

Figure 8-4. Translation Down (5V to 1.8V) at 2.5 MHz

8.3 Power Supply Recommendations

Always apply a ground reference to the GND pins first. This device is designed for glitch free power sequencing
without any supply sequencing requirements such as ramp order or ramp rate.
This device was designed with various power supply sequencing methods in mind to help prevent unintended
triggering of downstream devices, as described in Glitch-free Power Supply Sequencing.
8.4 Layout
8.4.1 Layout Guidelines
To ensure reliability of the device, the following common printed-circuit board layout guidelines are
recommended:
• Bypass capacitors should be used on power supplies.
• Short trace lengths should be used to avoid excessive loading.
• Placing pads on the signal paths for loading capacitors or pullup resistors to help adjust rise and fall times of
signals depends on the system requirements

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8.4.2 Layout Example

Figure 8-5. Layout Example

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9 Device and Documentation Support

9.1 Documentation Support
9.1.1 Related Documentation
For related documentation see the following:
• Texas Instruments, Implications of Slow or Floating CMOS Inputs
9.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Notifications to register and receive a weekly digest of any product information that has changed. For change
details, review the revision history included in any revised document.
9.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.4 Trademarks
NanoFree™ is a trademark of Texas Instruments.
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
9.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

9.6 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

10 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision M (November 2022) to Revision N (June 2024) Page
• Updated the Power Supply Recommendations section................................................................................... 17

Changes from Revision L (February 2017) to Revision M (November 2022) Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1
• Updated the thermals in the Thermal Information section..................................................................................5
• Updated the Switching Characterisitcs sections: extended some minimum specifications for lower delays .....7
• Updated the Ioff Supports Partial Power-Down Mode Operation section..........................................................13
• Added the Balanced High-Drive CMOS Push-Pull Outputs and VCC Isolation sections.................................. 13

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11 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

SN74LVC1T45DBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 (2PUH, CT15, CT1F, Samples
CT1R)
SN74LVC1T45DBVRE4 ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (2PUH, CT15, CT1F, Samples
CT1R)
SN74LVC1T45DBVRG4 ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (2PUH, CT15, CT1F, Samples
CT1R)
SN74LVC1T45DBVT ACTIVE SOT-23 DBV 6 250 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 (CT15, CT1F, CT1R) Samples

SN74LVC1T45DBVTG4 ACTIVE SOT-23 DBV 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (CT15, CT1F, CT1R) Samples

SN74LVC1T45DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 (TA5, TAF, TAR) Samples

SN74LVC1T45DCKRE4 ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (TA5, TAF, TAR) Samples

SN74LVC1T45DCKRG4 ACTIVE SC70 DCK 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 (TA5, TAF, TAR) Samples

SN74LVC1T45DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 (TA5, TAF, TAR) Samples

SN74LVC1T45DCKTE4 ACTIVE SC70 DCK 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 (TA5, TAF, TAR) Samples

SN74LVC1T45DCKTG4 ACTIVE SC70 DCK 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 (TA5, TAF, TAR) Samples

SN74LVC1T45DPKR ACTIVE USON DPK 6 5000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TA7 Samples

SN74LVC1T45DRLR ACTIVE SOT-5X3 DRL 6 4000 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 85 (1JX, TA7, TAR) Samples

SN74LVC1T45DRLRG4 ACTIVE SOT-5X3 DRL 6 4000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (1JX, TA7, TAR) Samples

SN74LVC1T45YZPR ACTIVE DSBGA YZP 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 (TA2, TA7, TAN) Samples

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

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(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF SN74LVC1T45 :

• Automotive : SN74LVC1T45-Q1
• Enhanced Product : SN74LVC1T45-EP

NOTE: Qualified Version Definitions:

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
• Enhanced Product - Supports Defense, Aerospace and Medical Applications

Addendum-Page 2
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