2SC4988

Silicon NPN Epitaxial

ADE-208-004
1st. Edition

Application

VHF / UHF wide band amplifier

Features

• High gain bandwidth product

fT = 8.5 GHz Typ
• High gain, low noise figure
PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz

Outline

UPAK

1
2
3

4 1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SC4988

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 9 V
Emitter to base voltage VEBO 1.5 V
Collector current IC 100 mA
1
Collector power dissipation PC 800* mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 15 — — V I C = 10 µA, IE = 0
voltage
Collector cutoff current I CBO — — 1 µA VCB = 12 V, IE = 0
I CEO — — 1 mA VCE = 9 V, RBE = ∞
Emitter cutoff current I EBO — — 10 µA VEB = 1.5 V, IC = 0
DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob — 1.1 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 5.5 8.5 — GHz VCE = 5 V, IC = 20 mA
Power gain PG 7.5 10.5 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF — 1.3 2.5 dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “FR”.

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2
 2SC4988

DC Current Transfer Ratio

Collector Power Dissipation Curve vs. Collector Current
1600
Collector Power Dissipation Pc (mW)

200
(on the alumina ceramic board)

VCE = 5V

DC Current Transfer Ratio h FE

160
1200

120
800

80

400
40

0
0 50 100 150 200 1 2 5 10 20 50 100
Ambient Temperature Ta (°C) Collector Current I C (mA)

Collector Output Capacitance vs.

Gain Bandwidth Product
Collector to Base Voltage
vs. Collector Current
12 1.8
Collector Output Capacitance Cob (pF)

IE = 0
Gain Bandwidth Product f T (GHz)

VCE = 5 V
f = 1 MHz
10
1.6

8
1.4
6
1.2
4

2 1.0

0 0.8
1 2 5 10 20 50 100 0.5 1 2 5 10 20
Collector Current I C (mA) Collector to Base Voltage V CB (V)

3
2SC4988

Power Gain vs. Collector Current Noise Figure vs. Collector Current

20 5
VCE = 5V VCE = 5V
f = 900 MHz f = 900MHz
16 4

NF (dB)
Power Gain PG (dB)

12 3

Noise Figure
8 2

4 1

0 0
1 2 5 10 20 50 100 1 2 5 10 20 50 100
Collector Current I C (mA) Collector Current I C (mA)

S21 Parameter vs. Collector Current

20
VCE = 5V
|S21 | (dB)

f = 1 GHz
16

12
S 21 Parameter

0
1 2 5 10 20 50 100
Collector Current I C (mA)

4
 2SC4988

S11 Parameter vs. Frequency S21 Parameter vs. Frequency

.8 1 90° Scale: 5 / div.

1.5
.6 120° 60°
2
.4
3
4 150° 30°
.2 5

10

0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0°

–10

–.2 –5
–4
–150° –30°
–3
–.4
–2
–.6 –120° –60°
–.8 –1.5
–1 –90°
Condition: V CE = 5 V , Zo = 50 Ω Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step)
(I C = 5 mA) (I C = 5 mA)
(I C = 20 mA) (I C = 20 mA)

S12 Parameter vs. Frequency S22 Parameter vs. Frequency

90° Scale: 0.01 / div. .8 1

1.5
120° 60° .6
2
.4
3
150° 30° 4
.2 5

10

180° 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10

0°
–10

–.2 –5
–4
–150° –30°
–3
–.4
–2
–120° –60° –.6
–.8 –1.5
–90° –1
Condition: V CE = 5 V , Zo = 50 Ω Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step)
(I C = 5 mA) (I C = 5 mA)
(I C = 20 mA) (I C = 20 mA)

5
2SC4988

S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.555 –66.6 9.68 124.7 0.0717 62.3 0.672 –39.7
400 0.328 –102.5 5.98 102.2 0.106 59.4 0.462 –49.8
600 0.225 –133.1 4.24 89.3 0.138 60.8 0.371 –53.4
800 0.185 –160.5 3.31 80.3 0.170 61.4 0.326 –56.4
1000 0.172 170.5 2.71 72.4 0.204 61.3 0.301 –59.9
1200 0.179 148.5 2.34 65.8 0.237 60.7 0.285 –63.6
1400 0.200 131.7 2.06 59.9 0.270 59.5 0.276 –68.2
1600 0.224 120.0 1.86 54.4 0.303 58.1 0.268 –73.2
1800 0.253 108.7 1.71 49.6 0.334 56.4 0.262 –78.7
2000 0.277 99.8 1.58 44.9 0.365 54.5 0.256 –84.7

S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.220 –101.8 13.13 106.0 0.0532 71.5 0.401 –48.6
400 0.135 –149.0 7.08 90.8 0.0946 73.6 0.277 –49.0
600 0.120 175.1 4.83 82.2 0.137 72.6 0.239 –50.1
800 0.132 148.0 3.70 75.5 0.178 70.8 0.221 –53.4
1000 0.155 129.6 3.02 69.5 0.220 68.2 0.212 –57.9
1200 0.174 117.3 2.58 63.9 0.258 65.6 0.205 –63.1
1400 0.196 105.5 2.26 58.8 0.296 62.9 0.201 –69.1
1600 0.225 97.8 2.04 54.1 0.331 60.3 0.197 –75.7
1800 0.246 92.0 1.86 50.0 0.364 57.5 0.193 –82.1
2000 0.267 84.5 1.72 45.7 0.397 54.7 0.190 –89.4

6
 Unit: mm

4.5 ± 0.1
1.5 ± 0.1
1.8 Max 0.44 Max (1.5)

0.4
2.5 ± 0.1
φ1

4.25 Max

(2.5)
0.53 Max

(0.2)
(0.4)
0.48 Max 0.44 Max
0.8 Min
1.5 1.5
3.0

Hitachi Code UPAK

JEDEC —
EIAJ Conforms
Weight (reference value) 0.050 g
Cautions

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