BF494 NPN RF Transistor

July 2006

BF494 tm

NPN RF Transistor

TO-92

1. Collector 2. Emitter 3. Base

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 20 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 30 mA
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range - 55 ~ 150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics
Symbol Parameter Value Unit
PD Total Device Dissipation, by RθJA 350 mW
Derate above 25°C 2.8 mW/°C
RθJC Thermal Resistance, Junction to case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Electrical Characteristics* TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Max. Units

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 20 V
V(BR)CBO Collector-Base BreakdownVoltage IC = 10µA, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V
ICES Collector-Emitter Sustaining Current VCE = 40V, VEB = 0V 10 nA
hFE DC Current Gain VCE = 10V, IC = 1mA 67 222
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.2 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.92 V
VBE(ON) Base-Emitter On Voltage VCE = 10V, IC = 10mA 650 740 mV
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

BF494 Rev. A
 BF494 NPN RF Transistor
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

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BF494 Rev. A
 BF494 NPN RF Transistor
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I20

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BF494 Rev. A