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Lecture 04_annotated - ECE213

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Lecture 04_annotated - ECE213

Uploaded by

Saad Qayyum
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Electronic Circuit Design (ECE-213)

Lecture 04

MOSFET Current Voltage Relationship and


Modes of Operation

ECE-213 Electronic Circuit Design Lecture 4-1


MOSFET IV Relationship
❑ Cutoff
➢ VGS<VTN
➢ iD=0
❑ Triode (Linear)
➢ VGS<VTN & VDS< VGS – VTN
➢ iD ∝ VDS, what else?
➢ Let’s come up with a relationship
❑ Saturation
➢ iD is (ideally) constant
➢ The curve of iD must be continuous

ECE-213 Electronic Circuit Design Lecture 4-2


MOSFET in Triode (Linear)
❑ Channel acts as a conductor.
❑ What does conductance/resistance depend on?
➢ Width
➢ Length
➢ Thickness
❑ How do these parameters correspond to
Channel?
➢ Width, length and depth
❑ What does channel depth depend on?
➢ VG – VCHANNEL

ECE-213 Electronic Circuit Design Lecture 4-3


MOSFET in Triode (Linear)
❑ Which value of VG – VCHANNEL should we use?
➢ Average value
❑ What is the average value of VG – VCHANNEL that
exceeds VTN?

ECE-213 Electronic Circuit Design Lecture 4-4


MOSFET in Triode (Linear)

ECE-213 Electronic Circuit Design Lecture 4-5


MOSFET in Triode (Linear)

ECE-213 Electronic Circuit Design Lecture 4-6


MOSFET in Triode (Linear)
❑ Which value of VG – VCHANNEL should we use?
➢ Average value
❑ What is the average value of VG – VCHANNEL that
exceeds VTN?

ECE-213 Electronic Circuit Design Lecture 4-7


MOSFET in Triode (Linear)

ECE-213 Electronic Circuit Design Lecture 4-8


MOSFET in Saturation

❑ Hint: we want a continuous curve for iD.


❑ Hence, iD(sat)= ?

ECE-213 Electronic Circuit Design Lecture 4-9


Symbols for n-Channel
Enhancement-Mode MOSFET

ECE-213 Electronic Circuit Design Lecture 4-10


Symbols for p-Channel
Enhancement-Mode MOSFET

ECE-213 Electronic Circuit Design Lecture 4-11


Family of iD Versus vDS Curves:
Depletion-Mode nMOSFET

Symbols

ECE-213 Electronic Circuit Design Lecture 4-12

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