JUNE 1973

vacuum tube replacement

fetaron (fet ran) n. [ModE. < L. semiconductus < f e t u m ( ? akin to F E T , transistor), + RON (< Molaysian), orig. with reference to a solid state tube replacement introduced by Teledyne Semiconductor in 19721 1. An answer t o improved performance and 100 year life of existing vacuum tube electronics gear 2. A cost reduction for companies maintaining large vacuum tube systems 3. A method of reducin the cooling requirements in b u i d n g s containing large quantities of vacuum tubes 4. A method of reducin electric bills due to elimination of k a m e n t current 5. [Adv.] The greatest thing since the winning of the West

FETRON

1w TELEDYNE SEMICONDUCTOR

Teledyne Semiconductor i s a division of Teledyne, a diversified corporation with over $1.2 billion annual sales, and products ranging from insurance to steel and electronics. The Teledyne Semiconductor division was formed in 1958. Its principle purpose was to develop and market the JFET (Junction Field Effect Transistor). Many high reliability solid state components have since been developed a t Tele dyne Semiconductor, These components are now used throughout the electronics industry in military, industrial, and consumer applications. The Semiconductor division now has an extensive product line that includes bipolar transistors, digital and analog integrated circuits, hybrids, and JFETs. These product technologies, principally hybrid and JFET, have been applied by Teledyne Semiconductor in the development of the FETRON, a solid state device for direct vacuum tube replacement. FETRON production uses the same proven construction methods and quality control procedures as Teledyne's ultra high reliability, military grade electronic components. As a result, the FETRON has out-performed the vacuum tube in i t s own socket. Although the required technology was available in 1968, the FETRON development didn't get under way until early 1970. This was partly due to the industry trend toward complete re-design of vacuum tube equipment with all solid state devices. In development of the FETRON , Tele dyne's objective was to reverse this trend and develop an economical method for retrofitting vacuum tube equipment in the field.

vacuum tube replacement

VACUUM TUBE TO FETRON
Prior to the development of the transistor, and particularly the high voltage JFET, electronic equipment for many a p plications was engineered with the vacuum tube as the principle active element. In spite of the instabilities and short life of the vacuum tube, much existing equipment, particularly telephone carrier equipment, is well designed and will last for many more years if properly serviced. However, the servicing cycle for vacuum tube equipment is very expensive, requiring frequent adjustment and periodic tube replacement to minimize down time. As a result, most existing vacuum tube equipment is scheduled t o be replaced by new all solid state equipment. But new equip ment is also very expensive and requires large capitalization in most cases. Replacement of obsolete vacuum tube equip ment has therefore been delayed. As a solution to this problem, Teledyne has developed the FETRON for direct plug-in replacement of vacuum tubes in the field. This allows the vacuum tube equipment user to reap many of the benefits of all solid-state equipment without having to incur the expense of complete new systems. The FETRON provides improved equipment performance, and drastically reduces servicing costs and electric bills from the date of installation. In high utilization equipment, such as telephone carriers, the FETRON can pay for itself within six months of installa tion. Dollar savings from the first year can then be applied toward more sensible long term equipment plans and for greater return on investment.

FETRON NOW
To date, the FETRON has been developed for replacement of pentodes and twin triodes. FETRONs are now available to replace many common tube types such as the 6AK5 and ?he 12AT7, described in a feature article of Electronics Magazine, AprillO, 1972. Now in development are replacement types for thyratrons, tetrodes, various high frequency tubes like the 6BA6, and power pentodes such as the 6AQ5 and the 6V6.
The FETRON is not a universal replacement for vacuum tubes, and must be configured differently for certain applications. For example, the FETRON configuration will generally be different for a pentode amplifier and an oscillator. However, the number of replacement tube types and specific applications is growing rapidly, and may one day cover virtually every tube type and application. The FETRON is currently used mainly in telephone communications systems. Several hundred thousand are now operating in telephone carrier equipment. FETRONs in the field have replaced the 407A, 408A, and similar types. Replace ment types are under development for the 403A, 404A.

415A, and 396A tubes. Other replacement types will be developed as requirements are made known by potential users.

INSIDE THE FETRON

The FETRON i s composed of one or more JFETs, a protective fuse, and R/C networks for tailoring to the required circuit performance parameters. The JFETs used in the FETRON are also used in high reliability missile systems, and many other applications. These are high volume, proven devices. A tantalum fuse i s used, and thick film methods are employed for the R/C networks. Using standard hybrid circuit techniques, the FETRON e l e ments are assembled under ultra clean conditions. The FETRON elements are then attached to a substrate, after which the substrate is soldered to the header. Using gold wires, thechipsand substrate pads are attached to the posts on the header. These posts extend through the header as the socket pins. A 3/4" nickel-plated cap is cold welded to give the standard semiconductor type hermetic seal. The cap also minimizes device temperature and allows easy plug-in to tube sockets

Figure 1 A Junction Field Effect Transistor (JFET). One of t h e JFETs used in the . FETRON, and in volume production for high reliability missile systems and many other applications.

Figure 2. A Tantalum Fuse. The fusing device used for protection of other components in case of failure due to overload. The tantalum fuse, like other FETRON circuit elements, is made by well-established integrated circuit methods.

Figure 3. FETRON Circuit Assembly. FETRONs are assembled on a thick film substrate by well-established hybrid circuit methods. After bonding to the header, gold wires are connected from its pads t o posts which extend through the header as pins for the vacuum tube socket.
3

Figure 4. FETRON Production. Methods used for assembly are the best industry quality control standards, MI L-STD-883. Assembly procedures are carefully planned and carried out under ultra-clean conditions to maximize FETRON reliability.

Figure 5. FETRON Assembly Steps. The FETRON thick film circuit i s shown (1) as a clean substrate, (2) with conductive film, (3) with circuit etched, and (4) with circuit chips attached. The completed circuit is then soldered to the header and connected t o the posts with gold wires. The header i s then hermetically sealed with a nickel-plated cap.
4

HOW THE FETRON WORKS

The FETRON usually contains two JFETs connected in cascode to simulate the actual performance of a pentode or triode vacuum tube. The advantages of this configuration are :

pentode. However, there are three important circuit improvements obtained with the FETRON These are:

1. Reduced noise by several dB, and no microphonics, 2. Higher gain which i s independent of screen voltage, and; 3. Lower distortion by typically 15dB. The pentode generates distortion by cross modulation of higher harmonics, a result of i t s threehalves response relationship. The FETRON , however, is close to being a perfect square law device over most of i t s usable range, and generates almost no harmonics above the second. The FETRON must also be tailored for pentode operating conditions, but less critically than for the triode. In general, the choice of FETRON depends on operating voltage and power levels, frequency range and whether an oscillator or an amplifier. Teledyne has analyzed the circuits on most telephone carrier equipment and other instruments such as Hewlett Packard VTVMs. Worst case analyses have been done on the carrier equipment by Teledyne together with different telephone companies. Teledyne has also formalized simple conversion procedures in most cases. The target ground rules for specific applications are:

1. The input characteristics are determined by the first device, 2. The plate voltage rating is determined by the second d e vice, and 3. The Miller capacitance i s minimized.
Since a screen grid is not needed by a FETRON, some circuits include R/C networks to simulate the equivalent circuit of the screen-plate circuit. A tantalum fuse is connected in the plate circuit to protect other circuit components in case of failure. Using cascoded JFETs in combination with other elements, any number of different tube types can be simulated. The FETRON is most like a pentode in that the plate current is essentially independent of the plate to cathode voltage. The plate current of a triode, and i t s transconductance, are very much dependent on the plate to cathode voltage. The FETRON is therefore superior in principle to the triode, and usually provides improvement in circuit performance upon replacement. However, the proper FETRON must be selected and trimmed for each application, to avoid saturation effects as determined from the load line analysis. Because of characteristic similarity, a FETRON can very closely simulate the function of a pentode tube. The gain/ phase relationships are almost identical for a FETRON and a

1. No external components.

2. No re-wiring of equipment.

3. No power supply changes.

4. Plug directly into the tube socket. These objectives have been achieved in almost every case. They make it easy for you t o reap the benefits of the FETRON.

20

la1 TS12AT7 SOLIDSTATE TUBE IFETRON)

EC-1

20

O v
nv

I' ; F T o v
-2.ov

1 6 t f

..D -

a
z
Y

16

12

E K

-4.OV

3
4

-6.OV

c
0
50
100

150
(VI

200

250

50

100

150

200 (VI

250

PLATE VOLTAGE, V ,,

PLATE VOLTAGE, V ,

Figure 6. FETRON Compared with Vacuum Triode. The FETRON provides a plate currentholtage characteristic that is superior to the triode. Plate current in the FETRON i s virtually independent of plate voltage. The plate current and transconductance of a vacuum triode is very much dependent on plate voltage. For example, with a 240 ohm load, a plate voltage change from 130V to 60V results in a plate current change from 8mA to 2.5mA. The same voltage excursion results in only PA in the FETRON.
5

la1 TS6AK5 SOLID-STATE TUBE IFETRONI

2o 16 EC= OV

7
-1.ov -1.5V -2.ov -2.5V

lbl 5AK5 VACUUM TUBE

u
YI

50

I 100

150

I 200

1
250

OO

50

100

150

200

250

PLATE VOLTAGE, Vb ( V I

PLATE VOLTAGE, V, ( V I

Figure 7. FETRON Compared with Vacuum Pentode. The FETRON i s most like a pentode, but provides a superior plate current/voltage curve. The transconductance a t the pentode is nearly independent of plate voltage, but depends on screen to plate voltage. The FETRON i s independent of both. A plate voltage change from 130V to 60V causes a pentode platecurrentchange from 10mA to 4mA. The corresponding FETRON current change is negligible.

24 407AIFETRON 408A/FETRON Eb = E,
20

-- -TRIODE

FETRON (A or B)

---

FETRON IA or B) PENTODE

16

+
Lu

K K

u
Y

5 9
Lu

12

4
m

+ 4
= 8

J
0
-1
-2

0
0
-1

-3

-4

-5

-6

-2

-3

-4 VOLTAGE

-5

-6

Ec. CONTROL GRID VOLTAGE

-V

k ,CONTROL

-V

Figure 8. Transfer Characteristic, FETRON vs. Vacuum Triode. By JFET selection and trimming, any triode function can be generated. A load line analysis is conducted by Teledyne to prevent saturation when the FETRON is plugged into the tube socket. A 5Oka load would saturate FETRON A, but not FETRON 6.

Figure 9. Transfer Characteristic, FETRON vs. Vacuum Pentode. Most vacuum pentode functions can be generated with a FETRON. The FETRON is less dependent on circuit voltage and generates less noise and microphonics.

CIRCUIT G A I N PHASE vs. FREQUENCY

- FREQUENCY - Hz

Figure 10. Frequency Response, FETRON vs. Vacuum Tube. The gain/phase curves for the FETRON and the vacuum tube are matched quite closely. No changes due to these functions are incurred, The FETRON reduces distortion due to upper harmonic by 15dB, a result of i t s true square law response.

FETRON BENEFITS
As a result of low initial cost of the FETRON and generous savings resulting from vacuum tube replacement, the FETRON is finding rapid and widespread acceptance. These cost savings result from the simple advantages the FETRON has over the vacuum tube. Primarily higher reliability, more stable operating characteristics, and lower power consump tion. Add to this l i s t the ease of replacement designed in by Teledyne, and the result is an irresistable opportunity for change. Higher Equipment Reliability results from the lower operating temperature, less thermal wear on other parts, and the longer lifetime of theFETRON. Vacuum tubes have a useful life of only thousands of hours. Experience with FETRONs in the field has demonstrated a lifetime greater than one million hours, over a hundred years. The net result is extended equipment life, less down time and a savings of frayed nerves. The cost of standard industrial tube replace-

ments alone is about $4.00 per year. Other components are estimated to be $2.00 per year for each tube, resulting from thermal wear. Maintenance Costs are drastically reduced since FETRONS do not require periodic replacement or frequent adjustment like the vacuum tube which begins to degrade immediately after installation. As a result, there i s no change in signal transmission strength or quality degradation with time. A d e finite improvement in quality in most cases. Estimated savings for a typical thirty tube system are: 1. Local site - 3hrs x $15/hr x 2 servicing/yr x 1/30 = $3ltu belyr. 2. Remote site - 4hrs x $25/hr x 2 servicing/yr x 1/30 = $6.67/tu belyr. Electric Bills are much lower because FETRONs use less than half the power of vacuum tubes. Air conditioning bills are lower too, and personnel efficiency goes up along with the
7

Table 1. Typical FETRON Savings, $/yr/FETRON

Item of Savings

Rernote/Comrnercial Tube Installation

Local/-Tube Installation

Your Installation

1. Reliability - 100 year FETRON 2. Power Savings - on going operation 3. Power Savings - new addition 4. Maintenance 5. Loss of Revenue (poor service, etc.) 6. Other Components - thermal wear 7. Extended life of present equipment Total FETRON savings

I
I I I 1 1

$4.00 $2.40 $4.80 (first year) $6.67 $1.50 $2.00

???

I
I I I

$1.00 2.40

$3.00 $1.50 $2.00

I I I

I
I I

I
I I

???
$9.90+?

$16.57+?

plant comfort index. Estimated power savings by replace ment of a vacuum tube by a FETRONare: 1. Operating tube power - 1.9 Wltube x 9k hrslyr x $.01/ kW hr = $1.70/tube/yr. 2. Air conditioning, standby power, etc. - 0.9 Wltube x 9k hrs/yr x $.Ol/kW hr = $0.70/tube/yr, Each equipment user has found different FETRONconversion priority and cost savings. Here are some examples of cost savings to set the wheels in motion.
e One area had maintenance problems and loud customer

FETRONs As a result, a +130 supply and standby batteries were pulled out, making room for new carrier systems. One group installed FETRONs in equipment scheduled for removal within two years, still realizing a substantial savings with FETRONs. Unlike vacuum tubes that wear out, the FETRONs will be used elsewhere when the equip ment is turned down. All groups like the advantage of immediate writeoff maintenance money, rather than having to capitalize new equipment. "We can now meet the tighter standards imposed on us without huge expenditures."

complaints on some repeater lines. All was quiet after conversion to FETRONs . A costly power panel replacement program for handling high current loads was cancelled due to the low current drain of FETRONs. After observing no drift in equipment calibration for a year after installation, numerous maintenance people were assigned other jobs. Instead of salvaging tube equipment in favor of shortlived new equipment, the older equipment lives on with FETRONs. After learning about FETRONs, additional batteries and diesel generator requisitions were cancelled. FETRONs eliminated the need. "Do I spend $20,000 for power supplies and building additions?" Just $1,600 worth of FETRONs deferred this expenditure for a t least 5 years. Power plant additions totaling $80,000 were deferred several years. A result of -48 volt savings accrued by installation of $20,000 worth of FETRONs. One sizable telephone company when asked why they were so anxious for their FETRON delivery, indicated that they would be saving $5,000 a day with FETRONs. Several remote sites in the Midwest used a twin DC to DC converter (two in case one failed), working off the -48V system. They were able to avoid increasing the -48V drain since filament current was eliminated with

These profitable success stories are a result of careful engineering, and cooperative effort to solve the problems involved. The solution to these individual problems has resulted in a catalog of FETRON conversion kits available from Teledyne Semiconductor.

FETRON KITS
Numerous systems have been converted to FETRONs throughout the North American Continent. Other systems are in a field trial stage. Still others are in the prototype stage. As a result, a number of FETRON conversion kits are available in various phases of development. Conversion of these systems available immediately: N 1 Repeater (- 130V or tandem) N 1 Terminals (save 200W) ON Carrier (stable, low W) 0 Carrier (stable, low W) 0 Repeater (low noise) HP 400 VTVM (low noise) E2, E3 Repeaters (simple conversion) V3 Voice Amplifiers (simple conversion) MF Receivers (all solid state) Lenkurt 45A Carrier (no drift) 43A1 Teletype (all solid state)

>

These systems are in field trials, available June, 1973: Lenkurt 45BN Cable Carrier Lenkurt 45BX Radio Carrier ANI Identifier Lynch 6510 Carrier

These systems are in the prototype stage, some available data: ON Junction TD2 70MHz IF Lenkurt 74, 70MHz IF Lenkurt 4564 Repeater Begin your investigations with the systems we have now. Teledyne stands ready t o work with you on systems in development, or new systems to suit individual needs.

MAKE FETRONS PAY

If you have vacuum tube equipment in your facility, FETRONs will save money for you. The following is a suggested approach to determine how. I t has been compiled from experience by applications of FETRONs at Teledyne. 1. Survey your equipment for the number and types of tubes, and types of equipment. 2. Consider setting up trial locations for field tests for the most pressing needs. Evaluate the results. 3. Teledyne will support your investigation with applicrt tions assistance. Take an in-depth look a t the savings achievable with the FETRON. 4. Let Teledyne know your needs. They have experience where it counts and are anxious to help.
For immediate information or assistance, contact: Teledyn e Semiconduc tor 1300 Terra Bella Ave. Mountain View, California 94043 Phone: 4 15/968-924 1

FETRONI

Solid State Vacuum

Tube Replacement
Features
ZERO WARM-UP NO MICROPHONICS REDUCED HEAT RADIATION MECHANICALLY RUGGED TRUE CUTOFF WHEN USED AS SWITCH NO SCREEN GRID POWER SEMICONDUCTOR RELIABILITY LOW NOISE/DISTORTION DIRECT REPLACEMENT NO HEATER OR SCREEN GRID POWER NO TRANSCONDUCTANCE DEGRADATION WITH TIME

TS6AK5 Series
Connection Diagram

Kls

' 0
NIC
ARRAY SOLID

NIC

GI

Kis

Description
The TS6AK5 Series i s a 7-pin miniature pentode in a metal hermetic sealed package. I t is designed for direct replacement of conventional glass vacuum tubes where greater reliability, stability, and performance are desired. It can be used in RF or IF amplifers/receivers, and in high-frequency wide-band applications up to 200 megahertz. It also excels in audio-frequency application exhibiting no microphonic noise and negligible l / f noise. Low power consumption i s ideal for mobile equipment tube replacement. Three types are available to meet differing applications.

Physical Dimensions

Maximum Ratings
Plate Voltage ~_ Grid - No. 2 (Screen-Grid) Voltage -~~ __~~~ ~ ~

p A q
_~
~ ~~~ ~

_~

~~

180 V _ _ _ NIC
~

Grid - No.~1 (Control-Grid) Voltage,_Positive-bias value _ _ __ Plate Dissipation -~ _ ~ _ _ Screen Grid Dissipation __ ___ Plate Current ___ _ _ Heater-CathodeVoltagcOperating Temperature Range ~ ~ _ _~
~ ~ ~ ~ ~~~~ ~ ~~ ~ ~~ ~ ~

ov

-25'C ._

30W 0 (N/C) 30 mA N IC to +125'C

SIMILAR TS6AK5 FAMILY REPLACEMENT TYPES 6AG5, 6AK5W, 403A. 403B. 408A, 5591, 6968, 7543.
Foreign:

5654, 6028, 6096, 6186,

J p
0-+-0
4 5 D 4

6F32, 12F31, DP61, E95F, EFSOF, EF94, EF95, EF96, EF905, HF93, HF94, PM05, M8100, M8180.
Other Available FETRONS

2D21, 6AL5, 6AM6, 6AU6, 6BC5, 6BH6, 6CB6, 6CE5, 6J6, 12AT7, 12AX7, 404A, 407A, 415A, 5590, 5670: 5847,,6688, 7721, E180F.

7I'TELEDYNE SEMICONDUCTOR
F E T R O N i s a registered t r a d e m a r k of T e l e d y n e S e m l c o n d u c t o r

General Characteristics
Heater Voltage Heater Current Grid No. 1 to Plate Capacitance Grid No. 1 to Cathode Capacitance Grid No. 2 and Grid No. 3 Capacitance N/C (Open) N/C 0.02 ppF 4.0 uuF N/C

Recommended Applications by Type

TS6AK5/A1 - This FETRON is designed for general purpose applications a t operating frequencies up to 30 MHz. Typical applications include telephone type carriers, FM IF strips operating a t 10.7 MHz, Hi-Frequency receivers through the 10 meter band, and DC applications such as analog computers. I t i s not recommended for use an an FM Limiter. TS6AK5/A2 - This FETRON should be used in those 6AK5 circuits heavily biased for low plate current operation and having high plate load resistances, typically above 5000 ohms. TS6AK5/A3 This FETRON is designed for VHF operation between 30 and 200 MHz. I t duplicates 6AK5 vacuum type operating dynamic characteristics up t o about 300 MHz. When use in R F Tuners is anticipated, the receiver AGC range should be compared with the TS6AK5IA3 cutoff characteristics to ensure proper operation.

Operating Conditions and Characteristics

TSGAKSIAI Characteristic Condition General Purpose Min. Plate Supply Voltage Grid No. 2 Supply Voltage Cathode Bias Resistor Plate Resistance Transconductance Typ. 130 N/C 200

( A t 25'c unless otherwise specified)

TS6AK5IA2
Low Current

TS6AK5lA3 Hi-Frequency Max. 180 Min. Typ. 130 N/C 200 Max. 180 V Units

Max. 180

Min.

Typ. 130 NIC 200

I
R K = 200 s2

1
~

0.5 3500

5.0 4500 -5.0 7.0 NIA 30 7500 -8.5 10

1
~

0.5 2000

5.0 3500 -2.5 3.0 N/A 30 7500 -6.0 4.5

@ 1 kHz
Grid No. 1 Voltase Plate Current Grid No. 2 Current Useful Frequency Limit Grid No. 1 Current
Case Operating Temperature Noise Figure

CK = 4.0 F I . /

0.5 2800 -3.5 2.8

5.0 3400 6000 -8.5 4.0 NIA

TOO

1
~

MR AHS MO I V mA MHz uA

In=lOuA R K = 200 52

I
4.0

1
1.5

8.0 200 0.1 2.0

I
1

Eo1 =-12 V

Pp = 2.0 W 100MHz

0.01 67

0.1

0.01

0.1

0.01 67

67

1
1

"c
dB

NOTE: In series filament circuits, all tubes must be replaced by solid state replacements or appropriate resistor connected externally between pins 3 and 4. Some applications may require modified TS6AK5. Consult Teledyne Semiconductor for appiication information.

Ty picaI Characteristics
PLATE C H A R A C T E R I S T I C

TS6AKS/Al
TRANSFER C H A R A C T E R lSTl C
60

TRANSCONDUCTANCE CHARACTERISTIC

rD
4

16

4
I

5
I V

4.8

+
12

5
V

3.6

a
3

r
I

z 0
80
Iyi

4
=

4
P -

51
a

24

40

7
d

1.2

0
0

100

200

300

400

500 EC1 - CONTROL GRID VOLTAGE - V

0 -50
E !,

-40

-30

-20

-1 0

VB - PLATE VOLTAGE - V

- CONTROL GRID VOLTAGE

-V

BY-PASSED PLATE C H A R A C T E R I S T I C
10

PLATE CURRENT VS. C A T H O D E BIAS

60

TRANSCONDUCTANCE VS. CATHODE BIAS

a
4
I

80

5
w V
4
V

48

c
60

36

a
3

4
I
P -

40

24

U 4

20

+
E,

12

0
0

20

40

60

80

100
. RK - CATHODE BIAS RESISTOR - 0

10

20

50 100

1 OK

1OK

VB - P L A T E VOLTAGE

-V

RK - CATHODE BIAS RESISTOR - L2

TS6AKWA2 TS6AK5/A3 Typical Characteristics

PLATE CHARACTERISTIC
10

TRANSFER CHARACTERISTIC

TRANSCONDUCTANCE CHARACTERISTIC

2
+
1

80

60

a
3

?
I

4
P

40

20

100

200

300

400

500
EC1 - C O N T R O L G R I D V O L T A G E - V

-2.0

-1 0

VB - PLATE VOLTAGE - V

EC1- CONTROLGRID VOLTAGE - V

BY-PASSED PLATE CHARACTER ISTIC

10

PLATE CURRENT VS. C A T H O D E BIAS

TRANSCONDUCTANCE VS. C A T H O D E BIAS

(BYPASSED1
4

a
4
l

4.0

8.0

5
U

+
30
YI

6.0

V 3

U 3 V

e
20
Y

? 4
I

4.0

5
10

2.0

n
0
20 40
60

80

100

10 20 RK

50

100

1 OK

10K

10 20

50 100

1.OK

10K

VB - P L A T E V0,LTAGE - V

- CATHODE BIAS RESISTOR - L2

R K - CATHODE BIAS RESISTOR - fl

User's Guidelines

How to Test FETRONS

STEP 1 Determine the plate power dissipation from the circuit of the vacuum tube to be replaced. Use the highest ambient temperature in which the FETRON is expected to operate. Check the chart to ensure that the maximum safe operating point i s not exceeded. The recommended maximum shown on the chart is established for a median lifetime of 300,000 hours (34 years).

The recommended equipment for testing FETRONS is a vacuum tube or semiconductor curve tracer, such as the Tektronix Model 575. Some mutual-transconductance type tube testers, such as the Hickok Model 539C or 752A, may be used with caution for limited testing but DO NOT TEST FOR SHORTS OR GASSY TUBES. DO NOT TEST A FETRON WITH AN EMISSION TYPE TUBE TESTER UNDER ANY CIRCUMSTANCES. Factory warranties are void for all FETRONS tested in such manner. I f a suitable t e s t method is not available, the simple circuit below may be used.
< VBB < 180 V

50

T5
AMBIENT TEMPERATURE i"C1

STEP 2 In series filament circuits, short circuit the filament socket pins (Nos. 3 and 4) and place a 39 s2, 2 W resistor in series a t a convenient location in the filament string. (Special FETRONS with pins 3 and 4 internally short-circuited can be supplied. Consult factory representative). STEP 3 Check the plate load resistance. I f it exceeds 5000s2 select Fetron type TS6AK5IA2. STEP 4 Check the grid circuit AGC and cathode bias resistor. The FETRON should not be used with positive grid-to-cathode bias or in class C operation wherein grid-to-cathode peak positive bias exceeds +1.0 volts. I f AGC bias voltage developed in the receiver exceeds -5.0 volts, it i s recommended that AGC bias be divided down to -5.0 volts maximum. Open the switch. Read cathode (plate) current, Interpret grid voltage from the formula: VG =lo* 200. Close the switch and read cathode (plate) current, IC. Interpret transconductance from the formula:

lo.

9TTELEDYNE SEMICONDUCTOR
1300 Terra Bella Avenue, Mountain View, Ca. Tel. (415) 968-9241 TWX: 910-379-6494 Telex: 34-8416 Chausse de la Hulpe 181, 1170 Brussels, Belgium Tel. (32) (2) 72 99 88 Telex: 25881 Albert Gebhardtstrasse 32, 7897 Tiengen, West Germany Tel. (49) (7741) 5066 Telex: 7921462 Heathrow House, Bath Road, Cranford, Middlesex, England Tel. (44) 01-897-2501 Telex: UPQ 935008 Nihon Seimei-Akasaka Bldg. (3F), 1-19, Akasaka 8-chorne, Minato-ku, Tokyo 107, Japan a Tel. 03 405 5738 a Telex: 2424241 TPJ J Teledyne Semiconductor cannot assume responsibility for use of any circuitry described other than circuitry embodied in a Teledyne product. No other circuit patent licenses are implied, MARCH 1974 0 1974 Printed in U.S.A./FE-l05-34/1OM

TELEDYNE SEMICONDUCTOR
TS6AM6"
Feut ures
0 0 0

TS6AM6*
*Note: Patent Pending

Solid State Vacuum Tube Replacement

Physical Dimensions
0

ZERO WARM-UP NO MICROPHONICS REDUCED HEAT RADIATION MECHANICALLY RUGGED TRUE CUTOFF WHEN USED AS SWITCH 500 MHz PERFORMANCE NO SCREEN GRID POWER

SEMICONDUCTOR RELIABILITY LOW NOISE/DISTORTION DIRECT REPLACEMENT NO HEATER POWER INTERNALLY RF SHIELDED NO TRANSCONDUCTANCE DEGRADATION WITH TIME
240

0
0

0 0

0 0

Description
The TS6AM6 is a 7-pin miniature pentode in a metal hermetic sealed package. It is designed for direct replacement of the conventional glass vacuum tubes where greater reliability, stability, and performance are desired. Application is primarily in Rf or I f amplifierslreceivers especially in high-frequency wide-band applications up to 500 megahertz, It also excels in audio-frequencyapplication exhibiting no microphonic noise and negligible l / f noise. Low power consumption is ideal for mobile equipment tube replacement.

7 LEADS
DIA

Maximum Ratings
Plate Voltage
Grid - No. 2 (Screen-Grid) Voltage Grid - No. 1 (Control-Grid) Voltage, Positive-bias value Plate Dissipation Screen Grid DissiDation Heater-Cathode Voltage Operating Temperature Range 300 Volts

NI C
0 Volts 2.5 Watts 0 (NK)
NI C
-25OC to +125OC
SOLID
ARRAY

Connection Diagram

SlMl LAR TS6AM6 FAMl LY REPLACEMENT TYPES

6AK5W. 5654, 6AG5, 6BC5, 6AU6, 12AU6, 7543, 6BH6, 6DT6-A, 12AW6, 3AU6, 3BC5, 3DT6, 4AU6, 4BC5, 408A, 4038, 415A, 6DC6, 403A, 6CE5, 1220,559 1,6096,6968,6 136,6 186,6265,6661,7693,6028. Foreign: 6F32, DP61, E95F, EF905, EF96, EF94, 12F31, HF93, HF94, EFSOF, EF95, M8100, M8180, PM05.

NIC

TELEDYNE SEMICONDUCTOR 1300 Terra Bella Ave., Mountain View, Ca. 94040 Phone: 415/968-9241 TWX: 910/379-6494
March 1973 1973/Printed in U S A .

General Characteristics (Stated in conventional tube terminology)

Heater Voltage Heater Current Grid No. 1 to Plate Capacitance Grid Nor1 to Cathode Capacitance Grid No. 2 and Grid No. 3 Capacitance N/C (Open) N/C

0.02pF
8.OpF N/C

Characteristic Plate Supply Voltage

Symbol

Min.

TYP.
250

Max.
300

Units

Grid No. 2 Supply Voltage

Grid No. 1 Voltage Plate Resistance Transconductance

, E
EC,
rP

N/C
-2
V

0.5

30 .

MR

Grid Current

0.5

100

nA

Average Plate Characteristics

m
a
E
l

20

16

a
E
l

16

I-

c
12

u Lz
Lz

f ts
ts 3 V

12

3
Y

I-

5 I m -

4
I

-40

0 -50

-30

-20

-10

Eci-CONTROL GRID VOLTAGE -V

60

48

36

2.4

12

0
-50

-40

-30

-25

-10

Eel- CONTROL GRID VOLTAGE

-V

NOTE: In series filament circuits, all tubes must be replaced by solid state raplacements or appropriate resistor connected externally between pins 3 end 4. Some applications may require modified TS6AM6. Consult Teledyne Semiconductor for application information.

TELEDYNE SEMICONDUCTOR
Features
ZERO WARM-UP NO MICROPHONICS REDUCED HEAT RADIATION MECHANICALLY RUGGED TRUE CUTOFF WHEN USED AS SWITCH NO SCREEN GRID POWER
0
0 0

TS6CB6A*

*Note: Patent Pending

TS6CB6A* Solid State Vacuum Tube Replacement

Physical Dimensions
SEMICONDUCTOR RELIABILITY LOW NOISE/DISTORTION DIRECT REPLACEMENT NO HEATER POWER INTERNALLY RF SHIELDED NO TRANSCONDUCTANCE DEGRADATION WITH TIME
p - % O l A q

Description
The TS6CB6A is a 7-pin miniature pentode in a metal hermetic sealed package. It i s designed for direct replacement of the conventional glass vacuum tubes where greater reliability, stability, and performance are desired. Application is primarily in Rf or I f amplifierslreceivers especially in high-frequency wide-band applications up to 175 megahertz. It also excels in audio-frequency application exhibiting no microphonic noise and negligible l / f noise. Low power consumption is ideal for mobile equipment tube replacement.

Maximum Ratings
Plate Voltage
Grid - No. 2 (Screen-Grid)Voltage Grid - No. 1 (Control-Grid) Voltage, Positive-bias value 300 Volts NIC

0 Volts
2.5 Watts

Plate Dissipation
Screen Grid Dissipation Heater-CathodeVoltage Operating Temperature Range

Connection Diagram

0 (NIC)
NIC -25OC to +125OC
SOLI0
ARRAY NIC

SIMILAR TSGCBGA FAMILY REPLACEMENT TYPES

6AK5W. 5654, 6AG5, 6BC5, 6AU6, 12AU6, 7543, 6BH6, 6DT6-A, 12AW6, 3AU6, 3BC5, 3DT6, 4AU6, 4BC5, 408A, 4038, 415A, 6DC6, 403A, 6CE5,

1220,5591,6096,6968,6136,6186,6265,6661,7693,6028,6AM6.
Foreign: 6F32, DP61, E95F, EF905, EF96, EF94, 12F31, HF93, HF94, EFSOF, EF95, M8100. M8180. PM05.

TELEDYNE SEMICONDUCTOR 1300 Terra Bella Ave., Mountain View, Cam94040 Phone: 415/968-9241 TWX: 910/379-6494
Match 1973

0 1973/Printed in U.S.A.

FE-062-33/1 O M

General Characteristics
Heater Voltage Heater Current

(Stated in conventional tube terminology) NI C NIC (Open)

0.02ppF

Grid No. 1 to Plate Capacitance Grid No. 1 to Cathode Capacitance Grid No. 2 and Grid No. 3 Capacitance
~

8.0ppF
. . NI C

Operating Conditions and Characteristics (At 25OC unless otherwise specified)

Characteristic
-

Symbol Eb Ec 2 ECl

Min.

Typ.

Max.

Units V

Plate Supply Voltage

125

300
N/C

Grid No. 2 Supply Voltage Grid No. 1 Voltage Plate Resistance

-

-3 0.5

1
1
~

Transconductance
~

gm

4000

1 1

3.0

7000

9000 .10.0

pmhos

Grid No. 1 Voltage for 1OpA Plate Current Plate Current Grid No. 2 Current Amplification Factor Grid Current

I
4.0
~

-&O
10 NIC 21000 0.5

13

I "
mA

P
IC1

2000

1
nA

Average Plate Characteristics

20

a
E
l
I-

16

I-

a 5
rc
w 3

e y1

12

rc
U 3

80

4 I n -

4op37E-:$d
-1 5 v

4
n -

100
Vg

200

300

400

500
E,,-CONTROL GRID VOLTAGE -V

0
10 20 50 100

7 OK
-ohms

10K

- PLATE VOLTAGE - V O L T S

R K -CATHODE B I A S RESISTOR

10

a
E
l

80
yi

2
V

+
LL

0 Y

a a
3

60

2 3
z
a

a
V

IY

40

4 -

x
a
I-

x
2
I

z 0

20

E
0
0

20

40

60

80

100

R K -CATHODE BIAS RESISTOR -ohms

NOTE: In series filament circuits, all tubes must be replaced by solid state replacements or appropriate resistor connected externally between pins 3 and 4. Some applications may require modified TSGCBGA. Consult Teledyne Semiconductor for application information.

TELEDYNE SEMICONDUCTOR
TS12ATf
Features
0 0

TSl2AT7"
*NOTE: Patent Pending.

Solid State Vacuum Tube Replacement

Physical Dimensions
0

0 0

0
0

ZERO WARM-UP NO MICROPHONICS REDUCED HEAT RAD I AT ION MECHANICALLY RUGGED TRUE CUTOFF WHEN USED AS SWITCH NO SCREEN GRID POWER

0
0

0 0 0

SEMICONDUCTOR RELIABILITY LOW NOISE/DISTORTION DIRECT REPLACEMENT NO HEATER POWER INTERNALLY RF SHIELDED NO TRANSCONDUCTANCE DEGRADATION WITH TIME

Description
The TS12AT7 is a 9-pin miniature double triode in a metal hermetic sealed package. It is designed for direct replacement of the conventional glass vacuum tubes where greater reliability, stability, and performance are desired. It is used as push-pull cathode-drive amplifier or frequency converter in the FM range, multivibrators or oscillators in industrial control devices, phase inverters, clamp circuit, relay drivers, and other diversified applications. The low power consumption makes it ideal for mobile equipment tube replacement.

7 9 LEADS -DIA $ :

Maximum Ratings
Plate Voltage Grid Voltage, Negative bias value Plate Dissipation Peak Heater-Cathode Voltage Maximum Grid Circuit Resistance Operating Temperature Range 250 Volts

-50 Volts 5.0 Watts N/C

2.0 Megohms -25OC to +125OC 30 mA
STATE

Connection Diagram

Plate Current SIMILAR TS12AT7 FAMILY REPLACEMENT TYPES

12AU7, 6BC8, 6BQ7-A, 6CG7,6J6,7AU7,9AU7,8CG7,12AV7,6DT8,6EV7, 12827. 6201, 6679, 6189, 5814A, 6680, 6072, 396A, 407A, 407B, 12AX7, 12AZ7, 6827, 6828. Foreign: 8152, 8309, 8739, ECC81, ECC82, E81CC, E82CC, ECC801, ECCBOlS, ECC802, ECC802S, ECC186, 8329, 8749, M8136, M8162, QB309, QA2406.

TELEDYNE SEMICONDUCTOR 1300 Terra Bella Ave., Mountain View, Ca. 94040 Phone: 415/968-9241 TWX: 910/379-6494
March 1973

@ 1973/Prlnted In U.S.A./FE071-33/121/5M

General Characteristics (Stated in conventional tube terminology)

Heater Voltage Heater Current Grid-to-Plate Capacitance (Each unit) Grid-to-Cathode Capacitance (Each unit) Piate-to-PlateCapacitance Heater-to-CathodeCapacitance N/C (Open) N/C 3.5ppF 25PPF 0.1ppF NI C

Operating Conditions and Characteristics (At 25OC unless otherwise specified)

CHARACTER ISTIC
Plate Supply Voltage

SYMBOL

MIN.

TYP. 130 240

MAX. 250

UNITS Volts ohms

E ,
R,
E C l c2

Cathode-Bias Resistor Peak A-F Grid-to-Grid Voltage Plate Resistance Transconductance Amdification Factor Grid Voltage for Plate Current of 10pA Peak Negative Grid Voltage

20
50
250

Volts Kilohms

rn

I
1 .

, 9
4

I 1 I

2000
100

I I I

3000 750

-7.0

I I

6000

-10

I I

Micromhos

Volts Volts Milliamps Nanoamps Centigrade

ktJ

-150

-300
9.0
2.0 +75

I
15 100
+I25

Plate Current
Grid Current Tube Operating Temperature

4.0
-55

I C OT

a
l

a
l

c
y1

z
a n:
V 2
Ly

+
w z
V 2

a n: c w

c
P

4
I

4
n I

n -

Vg

- PLATE VOLTAGE - VOLTS

I
. c

-10

-8
Ec

-6

-4

-2

0
RK -CATHODE BIAS RESlSTOR - ohms

- GRID VOLTAGE -VOLTS

s
5

5
w 0

5
Y
a
V

6
V

a
8
I

U 0

VJ

z
a

a
1
E
I I I
1

c
I

E
I

-8
E,-

-6

-4

-2

I 0

0
10 20

50 l o o

1 OK

GRID VOLTAGE

- VOLTS

R K -CATHODE BIAS RESISTOR -ohms

NOTE: In series filament circuits, all tubes must be replaced by solid s t a t e replacements or appropriate resistor connected externally between pins 3 and 4. Some applications may require modified TS12AT7. Consult Teledyne Semiconductor for application information.

TELEDYNE SEMICONDUCTOR
Features
ZERO WARM-UP NO MICROPHONICS 0 REDUCED HEAT RADIATION MECHANICALLY RUGGED 0 TRUE CUTOFF WHEN USED AS SWITCH NO SCREEN GRID POWER
0

TSl2AX7"
' N O T E : Patent Pending.

TSl2AX7* Solid State Vacuum Tube Replacement

Physical Dimensions
SEMICONDUCTOR RELIABILITY LOW NOISE/DISTORTION DIRECT REPLACEMENT NO HEATER POWER NO TRANSCONDUCTANCE DEGRADATION WITH TIME

Description
The TS12AX7 i s a 9-pin miniature twin triode in a metal hermetic sealed package. It is designed for direct replacement of the conventional glass vacuum tubes where greater reliability, stability, and performance are desired. It i s used as multivibrators or oscillators in industrial control devices, phase inverters, clamp circuit, relay drivers, and other diversified applications. The low power consumption makes it ideal for mobile equipment tube replacement. Application i s primarily intended for replacement in circuits requiring unusually low plate current operation, such as those employing the type 12AX7 vacuum tube. For other applications, refer to the TS12AT7/A1 Fetron data sheet.

Maximum Ratings
Plate Voltage Grid Voltage, Negative bias value Plate Dissipation Peak Heater-CathodeVoltage Maximum Grid Circuit Resistance
~

250 Volts -50 Volts 3.0 Watts N/C 2.0 Megohms -25OC to +125OC 5

Connection Diagram

Operating Temperature Range Plate Current

SIMILAR TS12AT7 FAMILY REPLACEMENT TYPES

12AU7, 6BC8, 6BQ7-A, 6CG7, 6J6, 7AU7, 9AU7, 8CG7, 12AV7, 6DT8, 6EV7, 12827, 6201, 6679, 6189, 5814A, 6680, 6072, 396A, 407A, 4078, 12AT7, 12A27, 6827, 6828. Foreign: 8152, 8309, 8739, ECC81, ECC82, E81CC, E82CC, ECC801, ECC801S, ECC802, ECC802S. ECC186,8329,8749, M8136, M8162, QB309, QA2406.
______~
~~

TELEDYNE SEMICONDUCTOR 1300 Terra Bella Ave., Mountain View, Ca. 94040
April 1973

Phone: (415) 968-9241

M I X : (910) 379-6494

0 1972/Printed in U.S.A.IFE074-43l15M

General Characteristics
Heater Voltage Heater Current Grid-to-Plate Capacitance (Each unit)

(Stated in conventional tube terminology)

N/C (Open)

N/C
3.5111~F

Grid-to-Cathode Capacitance (Each unit) Plate-to-Plate Capacitance Heater-to-Cathode Capacitance

2PPF 0.1p i F N/C

Operating Conditions and Characteristics (At 25OC unless otherwise specified)

CHARACTER ISTIC
~ ~

SYMBOL

MIN.

TYP.
130

MAX.
250 -2.7 20

UNITS
Volts Volts Volts Kilohms

Plate Supply Voltage Grid No, 1 Voltage Peak A-F Grid-to-GridVoltage

Plate Resistance

Ec 1 ECl c2
rP

-0.3
50

-2.5

250 750 188

1000

Tra nsconductance Amolification Factor Grid Voltage forplate Current of 1 0 ~ A Peak Negative Grid Voltage
Plate Current

gm

300
150

Micromhos

-7 .O
EC
Ib
IC
fT

-10

Volts
Volts

-150 0.2

-300 0.8 2.0 0.9 100 +125

Milliamps Nanoamps Megahertz 'Centigrade

Grid Current Useful Frequency Limit Tube Operating Temperature

30
-55 +75

OT

Average Plate Characteristics (Each Unit)

-10
VB
-

-8

-6

-4

-2

PLATE VOLTAGE -VOLTS

EC

GRID VOLTAGE -VOLTS

10

p
u 2

08
Y z 0

z
3

06

6
0 3

04

02

a
c K
I
7

0
Vg

PLATE VOLTAGE

VOLTS

EC

G R I D VOLTAGE

WLTS

NOTE:

In series filament circuits, all tubes must be replaced by solid state replacements or appropriate resistor connected externally between pins 3 and 4. Some applications may require modified TS12AT7. Consult Teledyne Semiconductor for application information.

lhcuum tubes yield o sockets t h*-fid JFET *ices

reprinted from ELECTRONICS MAGAZINE aprillQl972

7FTELEDYNE SEMICONDUCTOR
Reprinted with permission of Electronics Magazine; Copyright 7972, McGraw-Hill, Inc.

Technical articles

Vacuum tubes yield sockets to hvbrid vic:eS

Thanks to high-voltage JFET technology, hybrid circuits called Fetrons exhibit virtually no aging, and also offer higher gain than do their vacuum tube counterparts
by Bruce Burman, Teledyne Semiconductor, Mountain View, Casf

0 A junction-field-effect device called a Fetron has

been developed that replaces a vacuum tube in a circuit directly, without requiring major modifications in the circuit. To withstand the tube's high voltage supply (the B+ voltage), the device is built with the high-voltage JFET technology that was developed more than five years ago for military systems requiring breakdown voltages of 200 to 300 volts. The Fetron package can be either a single JFET or two cascode-connected JFETs in a hybrid IC. Each kind is now being built as one-for-one replacements for such ~ 7, widely used tubes as the 6 ~ and 152 ~ ~ and each goes into an oversized IC metal can that has the same pin configuration as the tube it replaces.
Why the Fetron?

From a design point of view, Fetrons make good sense as replacements for tubes in much communication equipment: rn Having no drift or aging, they can be locked in place for years, whereas the transconductance of many tubes degrades, often making monthly or quarterly adjust-

ments and periodic replacements mandatory. Their improved performance includes higher amplification factors and lower noise than many tubes. rn Their low-power operation derives from the absence of heater or screen grids and the power supplies that run them. They also operate at 65 degrees centigrade, instead of the 100"C of tubes. The lifetimes of Fetrons are orders of magnitude longer than those of typical tubes-an estimated 30 million hours for Fetrons, 10,000 hours for tubes. rn They're physically tough, too-there's no glass to break in a metal can. Fetrons make good sense in terms of sales, too. Billions of tubes that the Fetron could replace are still being used in communication and radar equipment. For instance, the utility telephone network in the U.S. alone contains about 150 million tubes within the Fetron's capabilities, creating approximately a $100 million-a-year market. And the maintenance bill of another major
rn
Tubeless. Hybrid. JFET devices shown above replace tubes on onefor-one basis. Called Fetrons, they plug into unchanged circuit.

ElectronicsiApril 10, 1972

1. Brothers. JFET's elements are analogous to tube elements. The JFET source is comparable to the cathode, its drain to the plate, and gates to the grid. As the grid (plate) voltage goes negative, plate (drain) current drops. The gate's p-regions, growing into the channel, causes pinchoff, which is analogous to tube's cutoff

telephone system's 50 million 6AK5 and 1 2 ~ tubes ~ 7 alone is estimated to be $500 million a year. Less than half that amount would be required to replace all these tubes with Fetrons once and for all. Then there are probably another 70 million pentode and triode 'tubes in use in other equipment that is regularly maintained and regularly tuned-from mobile radios to various types of industrial equipment. The potential market grows toward a billion dollars. without even considering consumer equipment.
Viva la similarity

What makes the Fetron so attractive is that the JFET characteristics can be simply chosen to simulate a tube's dynamic performance. The circuit's normal trimmer components are used for high frequency tuning. Basically, and very conveniently, a vacuum tube pentode and a JFET are brothers under the skin. Both are voltage-controlled devices and. if the differences between tube and transistor terminologies are ignored, both can be designed by using the sameequations. Indeed, the operating polarities of n-channel JFETs and pentodes are identical, and they have similar output characteristics. If the JFET'S drain and gate voltage are

varied, the resultant family of curves will look just like the old familiar pentode plate-voltage-versus-plate-current curves at different values of control-grid voltage. Even the current-control mechanisms of the two devices are analogous. In a tube, the grid voltage controls the number of electrons emitted from the cathode that reach the plate. In the JFET, the gate potential modulates conduction in a channel that exists between source and drain, as is shown in Fig. I . The top and bottom gates of the JFET are comparable to the grid of the tube, its source is comparable to the tube's cathode. and its drain is comparable to the tube's plate. As the gate (grid) voltage goes negative. drain (plate) current drops because the gate (grid) p-regions grow into the n-channe1 region until they eventually pinch off the channel. This pinchoff is analogous to tube cutoff. Again, the output characteristics of JFET and pentode are very similar, as can be seen in Fig. 2. But since the JFET has no elements comparable to the pentode's screen grid and suppressor grid. it is closer to the simpler triode in construction. Since a JFET doesn't need a heater, warmup is instantaneous. Also, because of its lower inter-electrode capacitance and low channel resistivity. i t can operate at
P

( a ) TS6AK5 SOLIO3TATE TUBE (FETRON)

( b ) 6AK5 VACUUM TUBE

I
f
f
f

-inv
-1

5v

-2.0

-2.0

-2.5 V

I 50

I I 100 150 PLATE VOLTAGE, V (VJ ,

1
250

200

50

100 150 PLATE VOLTAGE, Vb (V)

200

250

2. Equal but better. The JFET's output characteristics, although similar to those of a pentode, follow the square law more closely, and glve a

much cleaner on-off action, as is evident from the sharp cutoff.

Electronics/April 10, 1972

much higher maximum signal frequencies than the tube, or at low frequencies with less distortion. The sharp cutoff evident in Fig. 2 gives a much cleaner onoff action, particularly in switching applications. In short, the Fetron can be considered a better pentode than the vacuum tube pentode, because its drain output curves come much closer to the theoretical ideal.
And two JFETS are better than one

GATE (GRID)

.ORAIN (PLATE)

It requires two JFETs in a hybrid package to simulate the performance of one pentode. The JFET must withstand high plate voltage (see Fig. 2) to replace the tube directly. But there is no single high-voltage JFET with enough transconductance g, to match that of the pen~ 5 tode tube. For example, to simulate the 6 ~ a transconductance of 3,500 to 7,500 micromhos at an operating current of 4 to 1 Omilliamperes is required. Moderate g, at high voltage is expensive to get with JFETs, since they must be physically large and of highresistance material to yield high breakdown voltages. Then, too, the major barrier to high-frequency performance in semiconductors is the Miller effect-the gate-to, source capacitance. In an amplifier, Miller C = Cgd(1 + A). This is minimized in pentodes because of the extremely low plate-grid capacitance that exists because the control grid is shielded by the highly positive voltage screen grid. To get a high-transconductance, high-frequency (lowMiller-effect capacitance) JFET device, its necessary to bootstrap or cascode two of them (Fig. 3). In such a design, the input transistor is a small-signal JFET, llke the 2N3823, chosen for its low capacitance and high g,; the output device is a high-voltage JFET, such as a 2N4882. The pair is assembled as chips and packaged in cans. Smooth operator The operation of the hybrid assembly is simple. The output JFET reduces the plate voltage to a safe level for the input JFET. The former JFETs drain is always connected to the high voltage-the equivalent plate connection in a Fetron-and its gate source connected to the input JFETS gate, which is tied to a low voltage or ground. With this arrangement the input capacitance of the device is just the fairly low capacitance of the input JFET, rather than the much higher capacitance associated with the large high-voltage chip. With this arrangement assuring equal gains, the Miller-effect capacitance is equal to or lower than that of a tube pentode. The Fetron has only the 0.02-picofarad drain-to-source capacitance of the high-voltage JFET in series with the drain-to-gate capacitance of the unity-voltage-gain low-voltage input JFET. The result: less than 0.02-pF Miller-effect capacitance. Also, the cascode arrangement boosts the effective output impedance of the Fetron about an order of magnitude above that of a pentode tube. This not only greatly improves the pentode curves, but makes the circuit gain less dependent on Fetron characteristics. The devices input looks like a reverse-biased semiconductor junction, which provides a very high resistance thats desirable in most applications. Significantly, the effective input impedance is an order of magnitude above a vacuum tubes. This enables a circuit to operate

3. Gaining with cascodes. Most Fetrons are built with two JFETs in a bootstrap or cascode connection to achieve high-gain operation Miller-effect capacitance is minimized by using a low-capacitance, high-gain input transistor, such as the 2N3823, connected to a highvoltage 2N4882 output device

from a high-resistance source without being loaded down.

Amplification equations

The tube equations apply when the Fetron is plugged into a typical tube biasing network, like the one shown in Fig. 4. (Heater and extra grid connections are left open on the Fetron.) At any control grid voltage, the plate current will be r l 7 1 2 where
= plate current at E, = 0 v lb = plate current at E, voltage E, = control grid voltage Eccoff) E, for 1 PA of Ib = The change of plate current with grid voltage at a constant plate current gives the transconductance. By differentiating the equation for plate current with respect to control voltage:
1bO

Ebb

OUTPUT (PLATE)

qEC
CATH 0 0 E

r
4. Same old circuit. A Fetron (TS6AK5, for example) can directly
replace a tube (6AK5, for example) in an unaltered circuit. The heater and extra grid connections are left open on the Fetron.

Electronics/April 10, 1972

where &. = transconductance at operating E,, and g , ~ = transconductance at E, = 0 v. These characteristics give the solid-state device a true square-law characteristic and, because of this, very low harmonic distortion. Higher-than-second-order harmonics are virtually nonexistent. In contrast, the vacuum tubes have a three-halvespower characteristic, and can generate substantially higher-order harmonics and intermodulation products. Interestingly enough, bipolar transistors have even more harmonics than the tube. The Fetrons very high output impedance, analogous to a vacuum tubes plate resistance rp, maximizes the voltage gain for a given load RL. The voltage gain of an amplifier (see Fig. 4) can be expressed as:

Building the high-voltage JFETs

JFETs with breakdown voltages over 300 volts can be made by standard planar processing. But to achieve this high voltage, it is essential to attain the maximum breakdown field for silicon, about 30 volts per micron. Also critical is the epitaxial layer thickness and resistivity. The channel is formed by the n-type epitaxial layer, which has a resistivity exceeding 5 ohm-cm. Since the channel region where pinchoff occurs is directly under the gate, doping levels in that region must be precisely controlled to limit spreading of the depletion region into the channel. The channel height depends on what final pinchoff voltage is desired. The voltage from gate to source, VGs,may be as large as -50 V. This V G value is required to enable D the drain to withstand a voltage of up to 400 V. However, this high drain-to-gate voltage can only be achieved if the spacing of the gate, source and drain is held to very close tolerances. Another difficulty is the need to shape the diffusions so as to minimize any surface field concentrations at the chip. Breakdown should occur in the bulk silicon, not at the surface. The substrate resistivity must be fairly high for good control of depletion spreading, as well. Otherwise, the channel might get pinched off with a very small charge in VFS.At high operating voltages, VDscan vary widely without any change in signal voltage, due to normal supply tolerances.

where ,u = gmrp( p is the tube amplification factor). But since rp is much higher than RL, the equation is simply

A gnl R, At lower frequencies-less than a few megahertz-the simplified equation is more than 99% accurate for a Fetron.
Fitting the FETs

Versions of the device can be made for both amplifier and oscillator service. (The package for oscillator applications may include a small resistor or RC network for feedback and neutralization.) In practice, many FET characteristics are available, and single or JFET cascode pairs can be made to match the tubes current-voltage curves as shown in Fig. 5 . Although several approaches are available, about 80% of the general-purpose applications considered to date are satisfied by the simple FET # 1 approach. This

+I

G R I D VOLTAGE (-Ec)

5. Chootlng a Fetron. Several Fetron types are available to match a tubes application. If the tube operates around a fixed point, such as A , a JFET, such as FET # 1 , is chosen. To match a tube that opis erates beyond a FETs cutoff, FET # 2 or FET 4 ~ 3 chosen: FET # 2 for high current before cutoff, FET # 3 for low, flat current.

type of JFET is chosen if the application is unknown or if the device must operate around some nominal operating point A (in which case, the JFET curve closely approximates the tube curve over most of the control voltage range). In large-volume applications, where the exact operating point is known, FET # 1 can be selected at the factory to coincide exactly with a point anywhere near A on the tubes curve. An operating point such as B beyond the normal FET cutoff can be matched by FET # 2 or FET #3. FET # 2 would provide a higher current for the same control voltage, so it passes through B before cutoff. FET #3 would have to be specially tailored for low, flat current characteristics, or for a narrow range of operation beyond the normal FETS cutoff. It would be a lower-transconductance, higher-cutoff JFET. In simulating a tube, the dynamic characteristics as well as the operating point must be considered. Depending on the particular application, special attention must be given to transconductance, phase shift, phase margin, operating range, and neutralization requirements. For amplifier operation, neutralization and operating range are the principle concerns. In most tube circuits, neutralization is used to nullify the effects of feedback capacitance during higher-frequency operation. When used as an oscillator, the Fetron must provide for positive feedback between the output and input. An internal RC network within the device headers (Fig. 6) acts as a screen grid which is connected to the plate to assure direct replacement. In Fetrons designed for amplifier operations, how-

Electronics/April 10, 1972

ever, the RC network is omitted. If needed, a capacitor is added to provide the necessary frequency response. Characteristics ,of a properly trimmed TS6AK5 Fetron and the t u b d replaces are listed in Table 1. Heater voltage is not specified, because those pins are not connected in the Fetron. Note the great increases in amplification factor and plate resistance when Fetrons are used. The effect of these differences on the circuit is greatly improved sensitivity-about 4 to 5 decibels-resulting from the higher mp, lower noise, and low distortion. Triode simulation The Fetron will also perform well if configured as a triode, for the three electrodes of a single JFET directly simulate the latters grid, cathode, and anode. But the JFETS much higher output impedance (hence higher gain) could cause an amplifier circuit to oscillate. Usually, however, the load resistance of a circuit is much smaller than rp of the Fetron, and there is no problem. The first Fetron triodes made were equivalents of the 12~T7 and Western Electrics 407 version, which has a 20-volt heater and slightly different pin-out. These Fetrons operate as twin triodes. Figure 7 and Table 2 show their characteristics compared to a single triode. Although the Fetrons transconductance is significantly lower (each of the triodes is a single high-voltage FET), its transconductance is the same as that of the twin triode being replaced. And the design equations given for pentode amplifiers also apply to the triode version. True, the Fetron output characteristics approximates a pentodes, not a triodes. But it can be used to replace a twin triode-the more common triode application because two of the small inexpensive devices go easily into one glass tube envelope. Its generally not as good an electronic device as a pentode, though many circuit designers use them in cascode to get lower noise than obtainable with a pentode. Now, the Fetron triode upgrades typical circuit performance because of its excellent square-law characteristics throughout the con20

PLATE CONTROL GRID

6. Farfiung net. This oscillator network is used when Fetrons replace a pentode oscillator The resistor and/or resistor-capacitor combination simulates screen-grid action The network is included within the header, permitting 1 1 replacement

trol voltage range. Power supply regulation can also be relaxed-triodes normally require well-regulated power supplies, because triode operating current depends on operating plate voltage, whereas the Fetrons does not (see Fig. 7a).
Its dependable

Besides replacing pentode and triode tubes, the Fetron gets higher marks in reliability than either. A highreliability tube has a life expectance of 5 x 104 hours (63% failure point). Preliminary data from burn-in and accelerated life tests on 1,000 Fetrons indicates a life expectancy of 3 X lo6 hours, or 300 years. Of the 1,000 in the sample, 787 were screened by the type of power burn-in tests generally given high-reliability tubes, and were operated for 20 hours at twice normal dissipation (1,760 milliwatts). The failure rate, or dropout, was only 3.5%, a small fraction of the tube screening dropout rate. In addition, some 2,500 Fetrons have been shipped to telephone companies for evaluation and trial applications. Many have been in use for as long as eight months, and to date, failures or degradations reported have been statistically unimportant. Finally, another group was put in a 170 C oven and

( a ) TS12AT7 S O L I D STATE TUBE (FETRON)

d E
w z

16

-f
-1ov

16

c
a a
-3

12

-2 0 v

-3 0 v
-4 0 v

::8
t-

2
4

-5 0 v

j
50 100 150 PLATE VOLTAGE, Vb ( V I

200

258

PLATE VOLTAGE,

Vt,

(V)

7. Just like a triode. Although the characteristics of a Fetron are different from those of a typical triode, they are similar to those of a triode pair and can be used wherever twin triodes are used. In fact, Fetrons were first designed to replace Western Electrics 407 twin triode.

Electronics/April 10, 1972

PENTODE AMPLIFIER

NIC

8. Dlfferent configurations. The internal configurations depend on whether the Fetron is destined for service as a pentode amplifier (a) or oscillator (b) For oscillator use, an internal RC network provides the required feedback when the Fetron is plugged into sockets

powered at 1.2 W , a test that keeps the junction temperature at 215C for 450 hours. One failed and one degraded (leaked), indicating device survival at 25C for 1011hours. From these destruction tests, it was found that although normal operating current is 7 mA, it generally , takes a steady current above 30 m ~ at 350 to 400 V, to induce failure. Surges up to 6 A can be withstood. Internal connections melt at 9 to 10 A, but fusing links can be built into the device so that if it does fail catastrophically, the circuit is protected. Shock and other physical tests, comparable to normal

environmental tests, have also been made. The Fetron, because of its hard metal case, is virtually unbreakable. The case is a solid, deep-drawn steel cap welded to a large header. Before welding, the case is evacuated and backfilled with dry nitrogen. Almost every general-purpose pentode and triode tube type, and various special-purpose ones, may be simulated with Fetrons, by selecting the appropriate FET pair and varying the internal connections and networks. Figure 8 shows two versions. Variations include: m The standard amplifier ( 6 ~ with 6.3-V heater). In ~ 5 amplifier circuits, a cathode resistor is commonly used to adjust the operating point. At frequencies up to 30 MHz, amplifiers don't need a neutralization network. At higher frequencies, an adjustable capacitor is usually available in the circuit. If not, a 2-pF capacitor may be added internally or externally. w The oscillator, with the screen grid simulated and feedback to input provided by the connection to pin 6. w The low-gain Single-FET pentode. rn The twin-triode amplifier, for low-noise cascoded triode circuits. The twin triode, with an RC network inserted for voltage regulator circuits. The Fetron pentodes have been operated to 500 MHz, exhibit lower i-f noise than the original tubes, and do not suffer from microphonics. Elimination of heater power, and usually all screen grid power as well, cuts supply drain and reduces operating temperature from well over 100C for the tubes to about 650C for the Fetron. After some eight months of trial operation, there has been no noticeable degradation in its transconductance. Fetron triodes will generally be used in low-frequency applications. In most of these, their sharp cutoff improves on the original circuit performance. Naturally, such triodes have the same general noise and powersaving advantages as the Fetron pentodes. Pacific Telephone Co. recently has converted to Fetrons on a trial basis in a number of repeater lines between San Francisco and Martinez, Calif. In addition, some of the channel equipment for multiplexing and
IC

TABLE 1: TYPICAL PENTODE DEVICE CHARACTERISTICS - R K = 200 R , Eb = 120 V PARAMETER UNITS 6AK5 VACUUM TS6AK5 SOLID-STATE

Plate voltage breakdown Plate resistance Transconductance Plate current ( R

= 200

v
Ma
kmhos

350

350
5.0

0.5

5,000
7.5 -8.5 2,500
4.0

4,500 7.0 -5.0

a)

mA

Grid voltage for I b = 10 PA Amplification factor Input capacitance Output capacitance Useful frequency limit

PF
PF

22,500
6.5

0.02
400

0.02
600

MHz

Electronics/April 10, 1972

TS12AT7 SOLID-STATE

Output capacitance

demultiplexing in a carrier office is now equipped with Fetrons.

What next?

There are numerous tube types that can be made with the basic Fetron designs. Types such as the 6JC6 and 6EW6, which have transconductances in the vicinity of 25,000 micromhos and plate currents in the 4 0 - m ~ range and which have already been made, can be combined with the 6 ~ ~ 1 5 ~ ~and their derivatives so as 2 , 7,

to make Fetron versions of the great majority of popular tube types. Next to be tackled will be the power pentode devices, such as 6 ~ @ , 6 V 6 ,and remote cutoff pentodes, such as 6BA6. Indeed, with volume production and some packaging changes, the Fetron could go on to become a low-cost replacement for most tubes. 0
REFERENCES 1 F E. Terman, "Radio Englneers' Handbook," 1s1 ed.. McGraw-Hill Book Co.. 1943. p.469. 2 . R. L. Berger, "The Direct Replacement 01 PentodeVacuum Tubes with Cascode Field Effect Transistors," Mid-America Electronics Conference, Kansas City. Mo.. October, 1971

9. Finding their place. In the above amplifier, all the 6AK5 and 12AT7 tubes have been replaced with equivalent Fetrons.

Electronics/April 10, 1972

february 1974

application note

FETRON Test Fixture

IfFTELEDYNE SEMICONDUCTOR

A Simple Fixture for Field Testing FETRONS

I

Assemble the test jig shown in Figure 1 which is wired accordingt o the schematic shown in Figure 2. After attaching a power supply and connector, the FETRON is inserted in the socket according t o the socket callout in Tables I or 11. With the cathode resistor switch in the "in" position, read the current referred t o as ldsr in Tables I or 1 . To show that 1 the device has gain, throw the cathode resistor switch to the "out" position. The current should roughly double in value. A good approximation of the transconductance may be computed a t this point using the equation:

Where RK = 20052 for S1 and 2400 for S 2 and S3. IC= Drain current with cathode bypass switch ( S l , S2 or S3) closed. lo = Drain current with cathode bypass switch open. This equation is verified in Appendix I.

TOGGLE
I

POWER SUPPLY INT

EXT

( PIN SOCKET) 9

(7 PIN SOCKET)

408A 6HK5

CATHODE RES

IN

OUT

IN

OUT

POWER SUPPLY

MILLIAMMETER

0 +

0 TOGGLES

0-0 +
CURRENT FLOW

75 TO 200 VOLTS

Figure 1. FETRON Test Fixture.

TABLE I.
FETRON 1005 1008 1022 1023 1024 1030 1032 1033 1037 1038 1042 1044 1046 1077
*

Tube 407A 407A 407A 407A 407A 407A 407A 407A 407A 407A 407A 407A 407A 407A

Idsr

RK 240 240 240 240 240 240 240 240 240 240 "0' 240 240 "0" 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4 2.3,4 2,3,4 2.3.4 3.0 to 11.0 4.0 to 10.0 2.0 to6.0 ,041 to 0.21 .4 to 2.0 2.0 to 5.5 4.0 to 15.0 3.5- 11.0 3.0- 11.0 .42 to 2.1 3.0 to 11.O .41 to 2.0 4.0 to 15.0 8 to 18.0 1.8 to 6.0 2.5 to 6.0 2.5 Min. .4 Min. .35 Min. 1.5 Min. 240 240 240 240 240 240 240 240 240 "0"

Side

Comments

Socket

1.505 to 2.2E .35Min. 4.0 to 10.0 2.0 to 6.0 ,041 to 0.21 .4 to 2.0 3.0 to 10.0 4.0 to 15.0 3.6 to 7.3 2.5 - 6.0 2.5 Min. .4 Min. .35 Min. 2.2- 6.0
2.5 to 6.0

52 52
80th sides cascoded 6,7.8 6.7,8 6,7.8 6.7,8 6'7'8 6,7.8 6.7'8 6,7,8 6,7,8 6.7.8 Regulator 2,3.4 = case

52

52
52 52 52 52 52 52 52 52 52 52

2.5 6.0
2.0 Min. 1.8 to 6.0 .35 Min. 1.8 t o 6.0 0.3 to 1.O 2.5 to 6.0 3.0 to 7.0

3.5 Min.

0.45 to 1.37 .35 Min. 3.0 to 11 .O 1.5 to 3.1 .41 to 2.0 4.0 to 15.0 10 to 30 1.8 to 6.0 -35 Min. 0.3 to 1.0 2.5 to 6.0 3.0 t o 7.0

TABLE II.
FETRON
1000

Tube 408A 408A 408A 408A 408A 408A 408A 408A 408~ 408A 408A 408A 408A 408 A 408A 408A 408A

I dsr

gm

RK

Comments 3 4 Sht.

Socket

5.0 to 9.0 4 to 10 4 to 10
4 t o 10

4.0 to 7.2 3.9 to 8.0 3.5 to 7.5 3.5 to 7.5 3.9 to 8.0 4.0 to 7.2 4.0 to 7.2 4.0 to 10.0 2.5 to 7.0 2.5 to 7.0 3.5 Min. 3.5 to 8.0 .35 Min. .35 Min.
2.0 to 8.0

200 200 200

200 200
200

51 51

1001 1011 1013 1018 1029 1035 1036 1003 1012 1019 1049 1004 1039 1040 1014 1056

Cathode diode 6AK5

51 51 51 51 51 51 51
51

7 to 12
3 to 9 5 to 9 4to12 2 to 5.5 2 to 5.5 2.0 Min. 3.0 to 8.0 .04 to 0.2 .4 to 1.8 1.5 to 5.5 4 to 10 4 to 10

200 200 200 200 200 200

200

Oscillator
Also 2.5 to 6.0,Z.O

51
51

- 6.0, 200 Oscillator

51
51 51

200 200
200 200

1.9 to 5.9 1.9 to 5.9

Has second gate on pin 7 Same as TR1014

51
s1

EXTERNAL POWER SUPPLY

POWER SUPPLY

'%2.3.4
6.7.8

Figure 2. FETRON Test Fixture Schematic.

APPENDIX I. TRANSCONDUCTANCE MEASUREMENTS

Transconductance can be calculated from currents monitored with a simple DC FETRON testor by means of the equation:

IC
gm= lo

-1

RK Where referring t o the schematic shown; RK is the cathode resistor. lo is the current with switch S open.

RK

IORK

ICis the current with switch S closed.

gm&
Id = Ic-lo

AVS

A Id

: gm =.

IC-lo
IORK

- -- 1 IC - lo
RK

I
This method gives only "Large Signal'' gm and should be interpreted only as a first order approximation to small signal gm.

for switch alternately open and closed. AV, = 1, RK for switch alternately open and closed since V, = 0 for SW closed.

9FTELEDYNE SEMICONDUCTOR
1300Terra Bella Avenue, Mountain View, Ca. Tel. (415) 968-9241 T W X : 910-379-6494 Telex: 34-8416 Chausse de la Hulpe 181, 1170 Brussels, Belgium Tel. (32) (2) 72 99 88 Telex: 25881 Albert Gebhardtstrasse 32, 7897 Tiengen, West Germany Tel. (49) (7741) 5066 Telex: 7921462 Heathrow House, Bath Road, Cranford, Middlesex, England Tel. (44) 01-897-2501 Telex: UP0 935008 Nihon Seimei-Akasaka Bldg. (3F). 1-19, Akasaka 8-chome, Minato-ku. Tokyo 107, Japan Tel. 03 405 5738 Telex: 2424241 TPJ J Teledyne Semiconductor cannot assume responsibility for use of any circuitry described other than circuitry embodied in a Teledyne product. No other circuit patent licenses are implied,

01974lPrinted in U.S.A./FE-096-113/3M

FETRON"

Instrument onversion Kits

HP400 Voltmeter Tektronix Oscilloscope CA Plug-in Module

3PTELEDYNE SEMICONDUCTOR

New Life for OH Instruments

A sure cure for vacuum-tube aging and associated reliability problems in instruments, and for the resulting calibration, maintenance and inventory expenses, is a FETRON@ solid-state tube conversion kit from Teledyne Semiconductor. FETRONs are hybrid integrated circuits that replace vacuum tubes. They use cascoded JFETs (junction field-effect transistors) to duplicate the transfer characteristics of specific types of vacuum tubes. And FETRON metal-can packages plug directly into vacuum tube sockets. Because FETRONs are solid-state, they have essentially the same stability, low-noise characteristics and reliability as high-quality bipolar transistors. Communications companies are using FETRONs in large quantities to improve existing tube equipment. Now for the instrument owner, Teledyne has developed off-the-shelf conversion kits. Each is a set of FETRONs designed to replace the tubes in widely used instruments. At present, FETRON c kits are available at a fraction of the cost of a new instrument to upgrade the HP400 VTVM and the CA plug-in module for Tektronix 500 series osciIloscopes.

re-- Q \\ 0 ' '"

'/
' \

'\

(9

--

'

FETRON is a registeredtrademark of Teledyne Semiconductor

-1 . -_

.- / , /

soSid=StateStability and Rdmbility

By retrofitting with FETRON conversion kits from Teledyne, you can extend the useful life of a vacuum-tube instrument many years and stretch out calibration intervals beyond 12 months.
lmproved Accuracy. FETRONs never drift, but vacuum tubes begin drifting immediately causing greater errors between calibrations. With FETRONs, periodic calibration is required only as a check forlmalfunctions.

c3

REFERENCE LEVEL
Y .......... .* *............... ........ . O.........*. * ...............*.......*

j.
FROM

** ..

FETRON

a a
I W

a W

VARIANCE .. ..... VACUUM TUBE 1 ..................................

TRUE READING *********** ACTUAL READING

TIME

The graph shows the difference in stability between vacuum tubes and FETRONs, as measured on a VTVM before and after conversion. Since drift is eliminated, the normal three-month recalibration cycle can be replaced by a cycle of 12 months or longer,with occasional bench checks to make sure the instrument is functioning properly. Being solid-state, FETRONs are not subject to tube degradation modes, such as gassiness, microphonics and filament deterioration, that upset measurement accuracy. What's more, FETRONs are immune to shock and vibration levels that could damage tubes, and they have many, many times the operating lifetime of tubes. They also improve the overall reliability of the instrument because they run cool, without heater power.

The HP400 conversion kit replaces the five amplifier circuit tubes of the HP400 VTVM. Conversion consists of removing the tubes, plugging in the FETRONs, and recalibrating the instrumentwith step-by-step procedures given in the instruction booklet.

CA Plug-in Conversion Kit

This kit replaces all 15 tubes in the CA plug-in module for Tektronix 500 series oscilloscopes. In addition to replacing the tubes, minor wiring changes are required. An instruction booklet details the conversion steps.

"IPTELEDYNE SEMICONDUCTOR
1300 Terra Bella Avenue, Mountain View, Ca. Tel. (415) 968-9241 TWX: 91 0-379-6494 Telex: 34-841 6 Chausse de la Hulpe 181, 1170 Brussels, Belgium Tel. (32) (2) 72 99 88 Telex: 25881 Albert Gebhardtstrasse 32, 7897 Tiengen, West Germany Tel. (49) (7741) 5066 Telex: 7921462 Heathrow House, Bath Road, Cranford, Middlesex, England Tel. (44) 01 -897-2501 Telex: UP0 935008 Nihon Seimei-Akasaka Bldg. (3F), 1-19, Akasaka 8-chome, Minato-ku, Tokyo 107, Japan Tel. 03 405 5738
APRIL 1974

Telex: 2424241 TPJ j

"1974 Printed in U S A FE 106-24 10M