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    STK0825F 1

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    Námaste Abaddon
    The document summarizes the specifications and characteristics of the STK0825F advanced power MOSFET from AUK Corp. intended for use in DC-DC converter and high voltage switching applications. The MOSFET has a maximum drain-source voltage of 250V, low gate charge of 15nC, and on-resistance as low as 0.43 ohms. Diagrams are provided showing electrical characteristics including drain current, capacitance, and safe operating area curves. Precautions are noted regarding intended use in general electronic equipment and consultation required for safety-critical applications.

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    STK0825F 1

    Uploaded by

    Námaste Abaddon
    80 views8 pages
    The document summarizes the specifications and characteristics of the STK0825F advanced power MOSFET from AUK Corp. intended for use in DC-DC converter and high voltage switching applications. The MOSFET has a maximum drain-source voltage of 250V, low gate charge of 15nC, and on-resistance as low as 0.43 ohms. Diagrams are provided showing electrical characteristics including drain current, capacitance, and safe operating area curves. Precautions are noted regarding intended use in general electronic equipment and consultation required for safety-critical applications.

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    STK0825F_1

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    The document summarizes the specifications and characteristics of the STK0825F advanced power MOSFET from AUK Corp. intended for use in DC-DC converter and high voltage switching applications. The MOSFET has a maximum drain-source voltage of 250V, low gate charge of 15nC, and on-resistance as low as 0.43 ohms. Diagrams are provided showing electrical characteristics including drain current, capacitance, and safe operating area curves. Precautions are noted regarding intended use in general electronic equipment and consultation required for safety-critical applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    80 views8 pages

    STK0825F 1

    Uploaded by

    Námaste Abaddon
    The document summarizes the specifications and characteristics of the STK0825F advanced power MOSFET from AUK Corp. intended for use in DC-DC converter and high voltage switching applications. The MOSFET has a maximum drain-source voltage of 250V, low gate charge of 15nC, and on-resistance as low as 0.43 ohms. Diagrams are provided showing electrical characteristics including drain current, capacitance, and safe operating area curves. Precautions are noted regarding intended use in general electronic equipment and consultation required for safety-critical applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

    Semiconductor

    STK0825F
    Advanced Power MOSFET

    DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features


    High Voltage: BVDSS=250V(Min.) Low Crss : Crss=13pF(Typ.) Low gate charge : Qg=15nC(Typ.) Low RDS(on) :RDS(on)=0.43(Max.)
    Type NO. STK0825F Marking STK0825 Package Code TO-220F-3L

    Ordering Information

    Outline Dimensions
    3.05~3.35 9.80~10.20

    unit : mm
    2.60~3.00

    15.40~15.80

    12.20~12.60

    9.10~9.30

    12.40~13.00

    1.07 Min. 0.90 Max. 0.60 Max.

    2.54 Typ.

    2.54 Typ.

    0.60 Max.

    3.46 Typ.

    4.70 Max.

    2.70 Max.

    PIN Connections 1. Gate 2. Drain 3. Source

    KSD-T0O007-002

    STK0825F
    Absolute maximum ratings
    Characteristic
    Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
    *

    (Tc=25C)

    Symbol
    VDSS VGSS ID (Tc=25) (Tc=100) IDM PD IAS EAS IAR EAR TJ Tstg

    Rating
    250 30 8 5.6 32 25 8 285 8 7.4 150 -55~150

    Unit
    V V A A A W A mJ A mJ C

    Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
    * Limited by maximum junction temperature

    Characteristic
    Thermal resistance Junction-case Junction-ambient

    Symbol
    Rth(J-C) Rth(J-a)

    Typ.
    -

    Max
    5.0 62.5

    Unit
    /W

    KSD-T0O007-002

    STK0825F
    Electrical Characteristics
    Characteristic
    Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

    (Tc=25C)

    Symbol
    BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

    Test Condition
    ID=250A, VGS=0 ID=250A, VDS= VGS VDS=250V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=4.0A VDS=10V, ID=4.0A VGS=0V, VDS=25V, f=1MHz

    Min.
    250 2.0 -

    Typ.
    0.35 4.2 510 76 13 15 85 90 65 15 3 6

    Max.
    4.0 1 100 0.43 770 120 20 23 5 9

    Unit
    V V A nA S pF

    VDD=125V, ID=8A RG=25

    VDS=125V, VGS=10V ID=8A

    ns

    nC

    Source-Drain Diode Ratings and Characteristics


    Characteristic
    Source current Source current(Plused) Forward voltage Reverse recovery time Reverse recovery charge

    (Tc=25C)

    Symbol
    IS ISM VSD trr Qrr

    Test Condition
    Integral reverse diode in the MOSFET VGS=0V, IS=8A Is=8A, VGS=0, diS/dt=100A/us

    Min
    -

    Typ
    222 1.45

    Max
    8 32 1.4 -

    Unit
    A V ns uC

    Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=5.9mH, IAS=8A, VDD=50V, RG=27 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature

    KSD-T0O007-002

    STK0825F
    Electrical Characteristic Curves
    Fig. 1 ID - VDS

    Fig. 2 ID - VGS

    Fig. 3 RDS(on) - ID

    Fig. 4 IS - VSD

    Fig. 5 Capacitance - VDS

    Fig. 6 VGS - QG

    KSD-T0O007-002

    STK0825F
    Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ

    Fig. 9 ID - TC

    Fig. 10 Safe Operating Area

    KSD-T0O007-002

    STK0825F
    Fig. 11 Gate Charge Test Circuit & Waveform

    Fig. 12 Resistive Switching Test Circuit & Waveform

    Fig. 13 EAS Test Circuit & Waveform

    KSD-T0O007-002

    STK0825F
    Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

    KSD-T0O007-002

    STK0825F

    The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.

    KSD-T0O007-002

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