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    2N60

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    vdăduică
    2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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    Download as PDF, TXT or read online from Scribd

    2N60

    Uploaded by

    vdăduică
    245 views8 pages
    2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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    2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    245 views8 pages

    2N60

    Uploaded by

    vdăduică
    2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    UNISONIC TECHNOLOGIES CO.

    , LTD 2N60
    2 Amps, 600 Volts N-CHANNEL MOSFET
    DESCRIPTION
    The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
    1

    Power MOSFET

    TO- 251

    TO-252

    TO-220

    FEATURES
    * RDS(ON) = 3.8@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

    TO-220F

    *Pb-free plating product number: 2N60L

    SYMBOL
    2.Drain

    1.Gate

    3.Source

    ORDERING INFORMATION
    Order Number Package Normal Lead Free Plating 2N60-TA3-T 2N60L-TA3-T TO-220 2N60-TF3-T 2N60L-TF3-T TO-220F 2N60-TM3-T 2N60L-TM3-T TO-251 2N60-TN3-R 2N60L-TN3-R TO-252 2N60-TN3-T 2N60L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube

    2N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating

    (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating , Blank: Pb/Sn

    www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co., Ltd

    1 of 8
    QW-R502-053,E

    2N60
    ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
    PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) SYMBOL VDSS VGSS IAR

    Power MOSFET

    RATINGS UNIT 600 V 30 V 2.0 A TC = 25C 2.0 A ID Drain Current Continuous TC = 100C 1.26 A Drain Current Pulsed (Note 2) IDP 8.0 A Repetitive(Note 2) EAR 4.5 mJ Avalanche Energy Single Pulse(Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC = 25C 45 W Total Power Dissipation PD Derate above 25C 0.36 W/ Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD 2.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C

    THERMAL DATA
    PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL JA RATINGS 112 112 54 54 12 12 4 4 UNIT

    /W

    Thermal Resistance Junction-Case

    Jc

    ELECTRICAL CHARACTERISTICS (TJ =25, unless Otherwise specified.)


    PARAMETER Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Body Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V MIN 600 10 100 100 -100 0.4 2.0 3.8 2.25 270 40 5 4.0 5 TYP MAX UNIT V A A nA nA V/ V S pF pF pF

    BVDSS/ ID = 250 A T J VGS(TH) VDS = VGS, ID = 250A RDS(ON) VGS = 10V, ID =1A gFS VDS = 50V, ID = 1A (Note 1) CISS COSS CRSS

    VDS =25V, VGS =0V, f =1MHz

    350 50 7

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    2 of 8
    QW-R502-053,E

    2N60
    ELECTRICAL CHARACTERISTICS(Cont.)
    PARAMETER SYMBOL TEST CONDITIONS Switching Characteristics Turn-On Delay Time tD (ON) Rise Time tR VDD =300V, ID =2.4A, RG=25 Turn-Off Delay Time tD(OFF) (Note 1,2) Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM VGS = 0 V, ISD = 2.4A, Reverse Recovery Time tRR di/dt = 100 A/s (Note1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle2% 2. Essentially Independent of Operating Temperature MIN

    Power MOSFET

    TYP 10 25 20 25 9.0 1.6 4.3

    MAX 30 60 50 60 11

    UNIT ns ns ns ns nC nC nC V A A ns C

    1.4 2.0 8.0 180 0.72

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    3 of 8
    QW-R502-053,E

    2N60
    TEST CIRCUITS AND WAVEFORMS

    Power MOSFET

    D.U.T.

    + VDS -

    + L

    RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD

    Fig. 1A Peak Diode Recovery dv/dt Test Circuit

    VGS (Driver)

    P.W.

    Period

    D=

    P. W. Period

    VGS= 10V

    I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

    Body Diode Recovery dv /dt VDS (D.U.T.) VDD

    Body Diode

    Forward Voltage Drop

    Fig. 1B Peak Diode Recovery dv/dt Waveforms

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    4 of 8
    QW-R502-053,E

    2N60
    TEST CIRCUITS AND WAVEFORMS (Cont.)
    RL VDD

    Power MOSFET

    VDS VGS RG

    VDS

    90%

    10V
    Pulse Width 1s Duty Factor 0.1%

    D.U.T.

    VGS

    10%
    t D(ON ) tR tD (OFF) tF

    Fig. 2A Switching Test Circuit

    Fig. 2B Switching Waveforms

    50k 12V 0.2F 0.3 F

    Same Type as D.U.T. 10V VDS QGS

    QG

    QGD

    VGS DUT 3mA VG

    Charge

    Fig. 3A Gate Charge Test Circuit

    Fig. 3B Gate Charge Waveform

    L VDS BVDSS

    RD

    VDD D.U.T.

    10V tp

    IAS

    tp

    Time

    Fig. 4A Unclamped Inductive Switching Test Circuit

    Fig. 4B Unclamped Inductive Switching Waveforms

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    5 of 8
    QW-R502-053,E

    2N60
    TYPICAL CHARACTERISTICS
    On-Region Characteristics
    Top: V GS 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm : 5.5V

    Power MOSFET

    Transfer Characteristics VDS=50V 250s Pulse Test


    Drain Current, ID (A)

    10 0
    Drain Current, I D (A)

    85 10
    0

    25 -20

    10 -1

    10

    -2

    250s Pulse Test TC=25 100 101

    10

    -1

    10-1

    10

    Drain-Source Voltage, VDS (V)

    Gate-Source Voltage, VGS (V)

    On-Resistance Variation vs . Drain Current and Gate Voltage

    Body Diode Forward Voltage Variationvs. Source Current and Temperature VGS=0V 250s Pulse Test

    Drain-Source On-Resistance, R DS(ON) ()

    12 10 8 6 4 2 0

    TJ=25 VGS=20V

    Reverse Drain Current, IDR (A)

    VGS=10V

    100 125 25

    10-1

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    1.4

    1.6

    Drain Current, ID (A)

    Source-Drain Voltage, VSD (V)

    Capacitance vs. Drain-Source Voltage 500 400 Capacitance (pF) Ciss 300 Coss 200 100 0 Crss VGS=0V f = 1MHz 10
    -1

    Gate Charge vs. Gate Charge Voltage 12 VDS=120V Gate-Source Voltage, VGS (V) 10 8 6 4 2 0 ID=2.4A 0 2 4 6 8 1 0 VDS=300V VDS=480V

    Ciss=CGS+CGD (CDS=shorted) Coss=CDS+CGD Crss=CGD

    10

    10

    Drain-Source Voltage, VDS (V)

    Total Gate Charge, QG (nC)

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    6 of 8
    QW-R502-053,E

    2N60
    TYPICAL CHARACTERISTICS(Cont.)
    Breakdown Voltage vs . Temperature 1.2

    Power MOSFET

    On -Resistance vs. Temperature 3.0 V =10V GS ID=4.05A 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 200

    Drain-Source Breakdown Voltage, VDSS (Normalized)

    1.1

    1.0

    0.9

    0.8 -100 -50

    50

    100

    150

    200

    Drain-Source On-Resistance, R DS(ON) (Normalized)

    VGS=10V ID=250A

    50

    100

    150

    Junction Temperature, TJ ()

    Junction Temperature, T J ()

    Max. Safe Operating Area Operation in This Area is Limited by RDS(on) Drain Current, ID (A) Drain Current, ID (A) 10 1 100s 10s 1ms 10m Ds C TC=25 TJ=125 Single Pulse 100 101 102 103 2.0

    Max. Drain Current vs. Case Temperature

    1.5

    100

    1.0

    10 -1

    0.5

    10 -2

    0.0 25 50 75 100 125 Case Temperature, TC ()

    150

    Drain-Source Voltage, VDS (V)

    Thermal Response

    Thermal Response, JC (t)

    100

    D=0.5 0.2 0.1 0.05


    JC (t) = 2.78/W Max. Duty Factor, D=t1/t2 TJM -TC=PDMJC (t)

    10

    -1

    0.02 0.01 Single pulse PDM t1 t2 10-2 10-1 10


    0

    10-5

    10-4

    10-3

    10

    Square Wave Pulse Duration , t1 (s)

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    7 of 8
    QW-R502-053,E

    2N60

    Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD


    www.unisonic.com.tw

    8 of 8
    QW-R502-053,E

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