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    Intro - Vlsi Circuit Design

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    Arafat Hossain
    This document provides an introduction to VLSI circuit design. It outlines the course contents and evaluation procedure, including exams, quizzes, and assignments. Key textbooks are also listed. The document then discusses various IC products like processors, memory chips, programmable chips, and system-on-chip integrated circuits. It provides a brief history of integrated circuits and transistors, covering important milestones like the earliest computer circuits in the 1940s, the first transistor in 1947, and the first integrated circuits in the late 1950s and early 1960s. The document concludes with sections on MOSFET scaling trends, international technology roadmaps, and a description of a basic CMOS inverter circuit.

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    © All Rights Reserved
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    Intro - Vlsi Circuit Design

    Uploaded by

    Arafat Hossain
    120 views24 pages
    This document provides an introduction to VLSI circuit design. It outlines the course contents and evaluation procedure, including exams, quizzes, and assignments. Key textbooks are also listed. The document then discusses various IC products like processors, memory chips, programmable chips, and system-on-chip integrated circuits. It provides a brief history of integrated circuits and transistors, covering important milestones like the earliest computer circuits in the 1940s, the first transistor in 1947, and the first integrated circuits in the late 1950s and early 1960s. The document concludes with sections on MOSFET scaling trends, international technology roadmaps, and a description of a basic CMOS inverter circuit.

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    Introduction of VLSI circuit design.

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    This document provides an introduction to VLSI circuit design. It outlines the course contents and evaluation procedure, including exams, quizzes, and assignments. Key textbooks are also listed. The document then discusses various IC products like processors, memory chips, programmable chips, and system-on-chip integrated circuits. It provides a brief history of integrated circuits and transistors, covering important milestones like the earliest computer circuits in the 1940s, the first transistor in 1947, and the first integrated circuits in the late 1950s and early 1960s. The document concludes with sections on MOSFET scaling trends, international technology roadmaps, and a description of a basic CMOS inverter circuit.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    120 views24 pages

    Intro - Vlsi Circuit Design

    Uploaded by

    Arafat Hossain
    This document provides an introduction to VLSI circuit design. It outlines the course contents and evaluation procedure, including exams, quizzes, and assignments. Key textbooks are also listed. The document then discusses various IC products like processors, memory chips, programmable chips, and system-on-chip integrated circuits. It provides a brief history of integrated circuits and transistors, covering important milestones like the earliest computer circuits in the 1940s, the first transistor in 1947, and the first integrated circuits in the late 1950s and early 1960s. The document concludes with sections on MOSFET scaling trends, international technology roadmaps, and a description of a basic CMOS inverter circuit.

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    WELCOME TO

    VLSI Circuit Design

    Short Profile
    TAFSIR AHMED KHAN
    LECTURER, EETE, DIU
    E-MAIL: shimul10175673@gmail.com
    RESEARCH INTEREST: OPTO & MICRO-electronic Devices, Digital
    Circuit and IC Design, Modeling; Biomedical engineering; Ultra Low
    Power Circuits; Sensors, Image processing.

    Course Contents, Evaluation


    Procedure and Text Books

    EVALUATION
    MID Term exam
    20%
    Class test/quiz 20%
    Attendance and assignments
    10%
    FINAL Term exam
    50%
    Total 100%
    Quizes:
    3 x Quizes (Mid 2- Final 1)20*3=60 marks
    (Average of all quizzes will be considered)
    TEXT BOOKS:
    CMOS VLSI Design- A Circuits and Systems Perspective, Neil H.E. Weste &
    David Harris, 3rd Edition.
    Principles of CMOS VLSI Design- A Systems Perspective, Neil H.E. Weste &
    Kamran Eshraghian, 2nd Edtion, Addison-Wesley Limited.

    IC Products

    Processors

    Memory chips

    PLA, FPGA

    Embedded systems

    Mobile communication,
    audio/video processing

    Programmable

    RAM, ROM, EEPROM

    Analog

    CPU, DSP, Controllers

    Used in cars, factories


    Network cards

    System-on-chip (SoC)
    Images: amazon.com

    VLSI:Very Large Scale Integration


    Integration:

    Integrated Circuits

    multiple devices on one substrate

    How

    large is Very Large?

    SSI

    (small scale integration) Transistors<10 (!)


    MSI (Medium scale integration) 10<Transistors<1000(!)
    LSI (Large scale integration) 1000<Transistors<100000(!)
    VLSI (Very large scale integration)
    100000<Transistors<10000000
    ULSI/SLSI (Super Large Scale Integration)
    10000000<Transistors

    The First Computer

    The Babbage
    Difference Engine
    (1832)
    25,000 parts
    cost: 17,470

    ENIAC - The first electronic computer (1946)

    ASIC ( application-specific integrated circuit) with mixture


    of full custom,RAM and standard cells
    Single port RAM

    Dual port RAM


    Full custom

    Standard cell

    FIFO

    Pentium

    VLSI Trends: Moores Law


    In

    1965, Gordon Moore predicted that


    transistors would continue to shrink, allowing:

    Doubled transistor density every 18-24 months


    Doubled performance every 18-24 months

    History

    has proven Moore right


    But, is the end is in sight?

    Physical limitations
    Economic limitations
    Gordon Moore
    Intel Co-Founder and Chairmain Emeritus
    10
    Image source: Intel Corporation www.intel.com

    Moores Law (cont)


    Intel

    co-founder Gorden Moore notice in 1964


    Number of transistors doubled every 12 months
    while price unchanged
    Slowed down in the 1980s to every 18 months
    Amazingly still correct, likely to keep until 2010.

    Moores Law, Intels Version

    Transistors

    Pentium III

    10M
    80486

    1M

    80386

    100K
    10K
    1K

    Pentium

    8086
    4040

    80286

    8080

    1975

    1980

    1985

    1990

    1995

    2000

    IC Scales
    Integration level
    Small Scale Integration
    Medium Scale Integration
    Large Scale Integration
    Very Large Scale Integration
    Ultra Large Scale Integration
    Super Large Scale Integration

    Abbreviation

    Number of devices on a chip

    SSI

    2 to 50

    MSI
    LSI
    VLSI
    ULSI
    SLSI

    50 to 5,000
    5,000 to 100,000
    100,000 to 10,000,000
    10,000,000 to 1,000,000,000
    over 1,000,000,000

    International Technology Roadmap


    for Semiconductors (ITRS)

    Progress of miniaturization and comparison of sizes of


    semiconductor manufacturing process nodes with some
    microscopic objects and visible light wavelengths

    International Technology Roadmap


    for Semiconductors (ITRS)
    Minimum feature size (m)
    DRAM
    Bits/chip
    Cost/bits @ volume
    (millicents)
    Microprocessor
    Transistors/cm2
    Cost/Transistor @ volume
    (millicents)
    ASIC
    Transistors/cm2
    Cost/Transistor @ volume
    (millicents)
    Wafer size (mm)

    1995
    0.35

    1997
    0.25

    1999
    0.18

    2001
    0.13

    2004
    0.10

    2007
    0.07

    64 M

    256 M

    1G

    4G

    16 G

    64 G

    0.017

    0.007

    0.003

    0.001

    0.0005

    0.0002

    4M

    7M

    13 M

    25 M

    50 M

    90 M

    0.5

    0.2

    0.1

    0.05

    0.02

    2M

    4M

    7M

    13 M

    25 M

    40 M

    0.3
    200

    0.1
    200

    0.05
    200 300

    0.03
    300

    0.02
    300

    0.01
    300
    400 (?)

    Julius Edgar Lilienfeld

    (April 18, 1882 August 28, 1963)


    Julius Edgar Lilienfeld was an
    Austro-Hungarian physicist. He was
    born in Lemberg in Austria-Hungary
    (now called Lviv in Ukraine), moved
    to the United States in the early
    1920s, originally in order to defend
    patents he possessed, and then
    made a scientific/industrial career
    there. He invented an "FET-like"
    transistor and the electrolytic
    capacitor in the 1920s.

    He filed several patents describing the construction and


    operation of transistors as well as many features of
    modern transistors.
    (US patent #1,745,175 for an FET-like transistor was
    granted January 28, 1930.) When Brattain, Bardeen,
    and Robert Gibney tried to get patents on their earliest
    devices, most of their claims were rejected due to the
    Lilienfeld patents. The optical radiation emitted when
    electrons are hitting a metal surface is named "Lilienfeld
    radiation" after he first discovered it close to X-ray tube
    anodes. Its origin is attributed to the excitation of
    plasmons in the metal surface.
    The American Physical Society has named one of its
    major prizes after Lilienfeld.

    Brief History

    FET-like" transistor by Julius Edgar Lilienfeld, 1920


    First Transistor, AT&T Bell Lab, 1947 (William
    Shockley, John Bardeen and Walter Brattain) (Ge)
    First Single Crystal Germanium, 1950
    First Single Crystal Silicon, 1952
    First IC device, TI, 1958 (Jack Kilby)
    First IC product, Fairchild Camera, 1961(Robert
    Noyce)

    First Transistor, Bell Lab, 1947

    Photo courtesy:
    AT&T Archive

    First Transistor and Its Inventors

    John Bardeen, William Shockley and Walter Brattain


    Photo courtesy: Lucent Technologies Inc.

    First IC Device Made by Jack Kilby of Texas


    Instrument in 1958

    Photo courtesy: Texas Instruments

    First Silicon IC Chip Made by Robert


    Noyce of Fairchild Camera in 1961

    Photo courtesy: Fairchild Semiconductor International

    MOSFET

    ~10nm
    2000

    Texas
    Instruments

    2015

    Vin

    IC Design:
    CMOS Inverter

    (a)

    Vdd

    NMOS

    Vss

    PMOS
    Vout

    Shallow trench isolation (STI)


    N-channel active region
    N-channel Vt
    N-channel LDD
    N-channel S/D

    P-channel active region


    P-channel Vt
    P-channel LDD
    P-channel S/D

    (b)
    P-well

    Polycide gate and local


    interconnection

    Metal 1

    Contact

    N-well

    Metal 1, AlCu
    W
    n+

    PMD
    n+

    STI

    P-Well

    p+
    N-Well

    P-Epi
    P-Wafer

    p+

    (c)

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