ELCT 363 Lecture 1 Introduction-Spring 2019
ELCT 363 Lecture 1 Introduction-Spring 2019
ELCT 363 Lecture 1 Introduction-Spring 2019
TOTAL 100%
9-16 Dec. Dec. 10, Tuesday, 12:30 p.m. (2.5 hours) Final Exam
Devices need Low-defect Lattice Matched Epitaxy which needs Bulk Substrates
Narrow Bandgap Semiconductors: Silicon (Si) and Gallium Arsenide (GaAs) and Gallium Phosphide (GaP)
12” Diameter Si-Boules 12” Diameter Si-Wafers Device Epitaxial Layers Power and Digital Electronics
6” Diameter GaAs-Boules 6” Diameter bulk-Wafers Device Epitaxial Layers IR Lasers-LEDs, Thermal Imagers
Gate 100 nm
30 nm