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    Switching Characteristics of CMOS

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    Joel D Livingstone
    The document discusses the switching characteristics of a CMOS inverter. It defines terms like rise time, fall time, and delay time. It then presents an analytical delay model describing the two intervals that make up the fall time. The rise time is obtained through symmetry. An empirical delay model uses circuit simulation to measure values that are substituted into equations to predict delay.

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    Switching Characteristics of CMOS

    Uploaded by

    Joel D Livingstone
    295 views17 pages
    The document discusses the switching characteristics of a CMOS inverter. It defines terms like rise time, fall time, and delay time. It then presents an analytical delay model describing the two intervals that make up the fall time. The rise time is obtained through symmetry. An empirical delay model uses circuit simulation to measure values that are substituted into equations to predict delay.

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    Switching characteristics of CMOS

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    The document discusses the switching characteristics of a CMOS inverter. It defines terms like rise time, fall time, and delay time. It then presents an analytical delay model describing the two intervals that make up the fall time. The rise time is obtained through symmetry. An empirical delay model uses circuit simulation to measure values that are substituted into equations to predict delay.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    295 views17 pages

    Switching Characteristics of CMOS

    Uploaded by

    Joel D Livingstone
    The document discusses the switching characteristics of a CMOS inverter. It defines terms like rise time, fall time, and delay time. It then presents an analytical delay model describing the two intervals that make up the fall time. The rise time is obtained through symmetry. An empirical delay model uses circuit simulation to measure values that are substituted into equations to predict delay.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    Switching Characteristics

    of CMOS inverter
    Switching Characteristics of
    CMOS inverter
    • Develop analytical delay model and empirical delay
    model to describe switching characteristics

    • Limitation of switching speed of CMOS gate – time


    taken to charge and discharge CL due to transition at
    the input followed to output
    Terminologies
    • Rise time tr : time for a waveform to rise from 10% to
    90% of its steady state value.

    • Fall time tf : time for a waveform to fall from 90% to


    10% of its steady state value.

    • Delay time td : time difference between 50% of input


    transition and 50% of output transition.
    tdf high to low delay
    tdr low to high delay
    Analytical Delay Model
    • Fall time tf consists of two intervals

    tf1 = period during which the capacitor voltage Vout


    drops from 0.9 VDD to (VDD - Vtn)

    tf2 = period during which the capacitor voltage Vout


    drops from (VDD - Vtn) to 0.1 VDD
    • Rise time tr can be obtained as same due to symmetry
    of CMOS circuit

    • Fall time is faster than rise time – due to different


    carrier mobilities
    • To have approximately same rise time and fall time
    make

    • Width of p-device must be increased 2 to 3 times the


    width of n-device

    • This in turn depends on the parameters of the process


    of MOS transistor
    • delay time td of a gate is dominated by the output rise
    and fall time
    • Average delay time is given by
    Empirical Delay Model
    • Circuit simulator is used to model the inverter or gate
    and the measured values are back substituted into
    appropriate equations

    • These constants now used to predict delay values

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