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Concept of Pn-Junction Diode: A.Mounika, Assistant Professor ECE-Department A.I.T.S-Tirupati

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The document discusses the concept and operation of a PN junction diode. It describes: 1) How a PN junction forms at the interface of a P-type and N-type semiconductor, creating a depletion region. 2) How applying a forward or reverse bias changes the barrier potential of the depletion region, allowing or blocking the flow of current. 3) The I-V characteristics of a PN junction diode, including its low forward resistance and high reverse resistance, as well as its breakdown voltage.

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Concept of Pn-Junction Diode: A.Mounika, Assistant Professor ECE-Department A.I.T.S-Tirupati

Uploaded by

mounika
192 views21 pages
The document discusses the concept and operation of a PN junction diode. It describes: 1) How a PN junction forms at the interface of a P-type and N-type semiconductor, creating a depletion region. 2) How applying a forward or reverse bias changes the barrier potential of the depletion region, allowing or blocking the flow of current. 3) The I-V characteristics of a PN junction diode, including its low forward resistance and high reverse resistance, as well as its breakdown voltage.

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PN JUNCTION DIODE PPT

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PN JUNCTION DIODE

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The document discusses the concept and operation of a PN junction diode. It describes: 1) How a PN junction forms at the interface of a P-type and N-type semiconductor, creating a depletion region. 2) How applying a forward or reverse bias changes the barrier potential of the depletion region, allowing or blocking the flow of current. 3) The I-V characteristics of a PN junction diode, including its low forward resistance and high reverse resistance, as well as its breakdown voltage.

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© All Rights Reserved
Download as PPTX, PDF, TXT or read online from Scribd
Download as pptx, pdf, or txt
192 views21 pages

Concept of Pn-Junction Diode: A.Mounika, Assistant Professor ECE-Department A.I.T.S-Tirupati

Uploaded by

mounika
The document discusses the concept and operation of a PN junction diode. It describes: 1) How a PN junction forms at the interface of a P-type and N-type semiconductor, creating a depletion region. 2) How applying a forward or reverse bias changes the barrier potential of the depletion region, allowing or blocking the flow of current. 3) The I-V characteristics of a PN junction diode, including its low forward resistance and high reverse resistance, as well as its breakdown voltage.

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CONCEPT OF PN-JUNCTION DIODE

by
A.Mounika,
Assistant Professor
ECE-Department
A.I.T.S-Tirupati
COURSE OUTCOMES

CO1: Understand the operation of diodes and special electronic devices.


CO2: Know operation of different rectifiers without and filters.
CO3: Understand construction, operation of BJT, FET in different configurations
CO4: Know the need of biasing and design of DC biasing circuits.
CO5: Design of amplifiers with BJTs and FETs by using small signal model
Learning Outcomes
LO 1:Learn fundamental mechanisms of electrical conduction in semiconductors
LO 2:Identify the difference between intrinsic and extrinsic semiconductor
LO 3:Analyse and evaluate the performance of PN Junction diode
LO 4:Understand operation of pn junction didoe under temperature conditions
LO 5:Understand operating principles of basic electronic devices including PN
junction Diode and Special Types of Diodes
LO 6:Identify Differences between PN Junction diode and Zener diode
LO 7:Prepare for further analysis of Diodes based on semiconductors
PN Junction Diode
• When P-type semiconductor is suitably joined to N-type semi conductor, the contact surface is called PN-junction

PN Junction

P Type Semi conductor N- Type Semi conductor


Symbol of P-N Junction Diode

 ‘A’ indicates Anode


 ‘K’ indicates Cathode
 A and K are the terminals of PN Junction diode
Formation of Depletion Region
No external connections:

• hj
Depletion Region
The depletion region, also called depletion layer, depletion zone,Space Charge Region.

The combining of electrons and holes depletes the holes in the P-region and the electrons in the N-region near the junction.

The excess electrons in the N region cross the junction and combine with the excess holes in the P region.
N region loses its electrons ……becomes + vly charged
P region accepts the electrons ……becomes -vly charged

At this point , the migratory action is stopped.

The depletion layer contains no free and mobile charge carriers but only fixed and immobile ions.

Its width depends upon the doping level..

Heavy doped……..thin depletion layer


lightly doped……..thick depletion layer
Barrier Potential or Threshold Voltage or Knee Voltage or Cut-in voltage

Threshold voltage for


For Ge..0.3 V
For Si ..0.7V
Barrier Potential
 Near the junction on one side there are many positive charges and on other side there are many negative
charges according to coulombs law there exist a force between these opposite charges .

 The opposite charges existing near the junction creates a potential difference voltage across the junction.

 The electric field between the charges is responsible to produce potential difference .

 This voltage acts as a barrier to flow of electrons and holes.

 Depletion Region acts as a Barrier for moment of electrons and holes


Biasing of PN Junction Diode

BIASING

FORWARD BIAS REVERSE BIAS


•Biasing : Applying external voltage

•ForwardBias Mode: Positive terminal connected to P-region


and negative terminal connected to N-region.

•Reverse bias mode: Negative terminal connected to P-region


and positive terminal connected to N-region.
PN Junction Diode acts as a Switch
 Diode has two electrodes –Anode and Cathode
 PN junction acts as Switch
In forward biased diode acts as close circuited- ON Switch
In reverse biased diode acts as open circuited - OFF Switch
Forward Bias Mode
• If the + of the battery is connected to the P-type and the –terminal to the N-type then
this type biasing is Forward biasing.
Reverse bias mode
• If the + of the battery is connected to the N-type and the –terminal to the P-type then
this type biasing is Reverse biasing.
V-I Characteristics of PN Junction Diode
Break down Voltage
The maximum reverse bias voltage that can be applied to a p-n diode is limited by breakdown. Breakdown is characterized by the rapid
increase of the current under reverse bias. The corresponding applied voltage is referred to as the breakdown voltage. There are two types
of break down voltages

1. Avalanche Beak down

2. Zener Break down

Avalanche breakdown occurs because of the collision of the electrons, whereas the Zener breakdown occurs because of the high 
electric field.

Knee voltage or Cut-in voltage

The forward voltage at which the flow of current during the PN Junction begins increasing quickly is known as knee voltage. This voltage
is also known as cut-in voltage. 

Knee voltage for Si – 0.7

Knee Voltage for Ge-0.3


Diode Resistance
 Diode offers a very small resistance (not zero) when forward biased and is called a forward resistance.
Whereas, it offers a very high resistance (not infinite) when reverse biased and is called as a reverse
resistance.
Forward Resistance
Reverse Resistance
Difference between Forward biasing and Reverse biasing

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