Imperfections and Diffusion

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Line Defects


Edge Dislocation

Screw Dislocation

Mixed Dislocation
Edge Dislocation
Screw Dislocation
Mixed Dislocation
Side View

Top View
Interfacial Defects
External Surface of the

crystal
Grain Boundary

Twin/Tilt Boundary

Stacking Fault

Phase Boundary etc.



Twin Boundary

Resulting from Mechanical Stress or during heat treatment
Tilt Boundary Low angle Tilt Boundary
between grains resulting
from an array of edge
dislocation

Notice that the angle is


perpendicular to the
dislocation direction.

If the angle is parallel to


Screw Dislocation and the
boundary will be called
twist boundary
10 to 20°
Chapter 5
Diffusion in Solids
Diffusion
Mass transport by atomic motion
Atoms are restless

Mechanism of Diffusion
Gases & Liquids- random (Brownian) motion

Solids- Vacancy or interstitial diffusion



How do atoms move in Solids?
Diffusion: atoms moving from one lattice site or interstitial site to another in a
stepwise manner.

Two conditions are to be met


-Vacancy at an adjacent site
-Enough energy to free bonded atom for diffusion

What is the energy source?


It is the available Heat
What drives diffusion in a particular direction?
C- gradient
Diffusion
In an elemental solid, atoms
• Self-diffusion:
also migrate.
Label some atoms After some time

C
C

A D
A
D
B
B

11
Diffusion
In an alloy, atoms tend to migrate
• Interdiffusion:
from regions of high conc. to regions of low conc.
Initially After some time

12 12
How does Diffusion Occur? (I)
Vacancy Diffusion

13
How does Diffusion Occur? (II)

Interstitial Diffusion


Much faster than Vacancy, Why?
1. Smaller atoms like B,H,O,C. Weaker interaction with the larger atom
2. More Vacant Sites no need to create a vacancy
How does Diffusion Occur? (III)
Substitution Diffusion (different atoms diffusing)
Applies to substitutional impurities

Atoms exchange with vacancies


Rate depends on

-number of vacancies
-activation energy to exchange
Process Using Diffusion (1)
Industrial Application
Surface of Gear Hardening
Diffuse Carbon atoms into the host iron atoms at the surface

Hard to deform

-C atoms lock planes from Shearing

Hard to Crack

-C atoms put the surface in compression


Processing Using Diffusion
• Doping silicon with phosphorus for n-type semiconductors:
• Process: 0.5 mm

1. Deposit P rich
layers on surface.
magnified image of a computer chip
silicon

2. Heat it.
3. Result: Doped light regions: Si atoms
semiconductor
regions.

light regions: Al atoms


silicon
Adapted from chapter-opening
photograph, Chapter 18, Callister 7e. 17

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