MOUNT LITERA ZEE SCHOOL, MYLAUDY

LESSON 3-CURRENT ELECTRICITY (2023-2024)

Question 1. State the two Kirchhoff’s laws. Explain briefly how these rules are justified.
(b) The current is drawn from a cell of emf E and internal resistance r connected to the network of resistors
each of resistance r as shown in the figure. Obtain the expression for
(i) the current drawn from the cell and
(ii) the power consumed in the network. (Delhi 2016)

Answer:
(a) Junction Rule : At any Junction, the sum of currents, entering the junction, is equal to the sum of currents
leaving the junction.
Loop Rule : The Algebraic sum of changes in potential, around any closed loop involving resistors and cells, in
the loop is zero.

Justification : The first law is in accordance with the law of conservation of charge. The second law is in
accordance with the law of conservation of energy.
(b) Given : EMF = E, internal resistance = r, resistance of each resistor = r
The equivalent circuit diagram is shown below

(i) The two resistances of V each between points C and D are in parallel

Similarly two resistances between points E and F are in parallel,

Now these resistances rCD and rEF are in series,

2. (a) Deduce the relation between current I flowing through a conductor and drift velocity v→d of the
electrons.
(b) Figure shows a plot of current ‘I’ flowing through the cross-section 5 of a wire versus the time ‘t’. Use the
plot to find the charge flowing in 10s through the wire.

(Comptt. All India 2012)

Answer:
(a) Relation between electric current and drift velocity : Consider a uniform metallic wire XY of length l and
cross-sectional area A. A potential difference V is applied across the ends X and Y of the wire. This causes an
electric field at each point of the wire of strength :

Due to this electric field, the electrons gain a drift velocity Vd opposite to direction of electric field. If q be the
charge passing through the cross-section of wire in t seconds, then, current in wire, I = qt
The distance transversed by each electron in time (t) = drift velocity × time = V dt

If we consider two planes P and Q at a distance Vdt in a conductor, then the total charge flowing in time t will
be equal to the total charge on the electrons present within the cylinder PQ.

The volume of this cylinder = cross sectional area × length = A Vdt

If n is the number of free electrons in the wire per unit volume, then the number of free electrons in the
cylinder = n(A Vdt)
If charge on each electron is -e (e = 1.6 × 10-19 C), then the total charge flowing through a cross-section of the
wire,

This is the relation between electric current and drift velocity. Negative sign shows that the direction of current
is opposite to the drift velocity.
(b) Charge = Current × time
(i) For 0 to 5 seconds, the current

Hence, q1 = (2.5) × (5) = 12.5 C

(ii) For 5 sec to 10 sec, the current = 5A
Hence, q2 = 5 × (10 – 5) = 5 × 5 = 25 C
q = q1 + q2 = 12.5 + 25 = 37.5 C
 (ii) (c) Electric current will remain constant in the wire.
Reason : All other quantities depend on the cross sectional area of the wire and hence will not remain
constant
Question 3.(a) Why do the ‘free electrons’, in a metal wire, ‘flowing by themselves’, not cause any current
flow in the wire?
Define ‘drift velocity’ and obtain an expression for the current flowing in a wire, in terms of the ‘drift
velocity’ of the free electrons.
(b) Use the above expression to show that the ‘resistivity’, of the material of a wire, is’ inversely
proportional to the ‘relaxation time’ for the ‘free electrons’ in the metal. (Comptt. Outside Delhi 2016)
Answer:
(a) (i) The free electrons, in a metal, (flowing by themselves), have a random distribution of their
velocities. Hence the net charge crossing any cross section in a unit time is zero.
(ii) The drift velocity equals the average (time dependent) velocity acquired by free electrons, under the
action of an applied (external) electric field.
(iii) Expression for current in terms of drift velocity :
Definition : Drift velocity is defined as the velocity with which fress electrons in a conductor get drifted in
a direction opposite to the direction of the applied field. Its unit is m-1s and dimensions [LT-1]

Expression : The magnitude of electric field set up across the conductor is given by
E = Vl
Let n be the number of free electrons per unit volume of the conductor.
Then, total number of free electrons in the conductor
= n × Volume of the conductor
Hence, Q = (nAl)e
Time taken by the charge to cross the conductor length l is given by

(b) We know from above

4. Define the term drift velocity.
(ii) On the basis of electron drift, derive an expression for resistivity of a conductor in terms of number
density of free electrons and relaxation time. On what factors does resistivity of a conductor depend?
(iii) Why alloys like constantan and manganin are used for making standard resistors? (Delhi 2017)
Answer:
(i) Drift velocity may be defined as the average velocity gained by the free electrons of a conductor in the
opposite direction of the externally applied field.
(ii)
Relaxation time : The average time that elapses between two successive collisions of an electron is called
relaxation time.

Suppose a potential difference V is applied across a conductor of length T and of uniform cross-section A,
then
Electric field E set up inside the conductor is given by

Under the influence of field E→, the free electrons begin to drift in the opposite direction E→ with an
average drift velocity vd.

Let the number of electrons per unit volume or electron density = n

Charge on an electron = e
Number of electrons in length l of the conductor = n × volume of the conductor = nAl
Total charge contained in length l of the conductor, q = enAl
According to the electrons which enter the conductor at the right end will pass through the conductor at the
left end in time,

(iii) Because constantan and manganin show very weak dependence of resistivity on temperature.

5. Define the term current sensitivity of a galvanotmer. In the circuits shown in the figures, the
galvanometer shows no deflection in each case. Find the ratio of R 1 and R2. (Comptt. All India 2017)
Answer:

6.Derive the expression for the current density of a conductor in terms of the conductivity and applied
electric field. Explain, with reason how the mobility of electrons in a conductor changes when the
potential difference applied is doubled, keeping the temperature of the conductor constant. (Comptt. Delhi
2017)
Answer:
(i) Derivation of expression for current density—
Using Ohm’s law,

Potential difference (V), across the ends of a conductor of length ‘l’ where field ‘E’ is applied, is given by

So, as potential is doubled, drift velocity also gets doubled, therefore, there will be no change in mobility.

7. (a) The potential difference applied across a given resistor is altered so that the heat produced per
second increases by a factor of 9. By what factor does the applied potential difference change?
(b) In the figure shown, an ammeter A and a resistor of 40 are connected to the terminals of the source.
The emf of the source is 12 V having an internal resistance of 2 O. Calculate the voltmeter and ammeter
readings. (Outside Delhi 2017)
 Answer:
(a) Heat produced in a resistor ‘R’ when applied, potential difference V, is :

8. In the circuit shown in the figure, find the current through each resistor. (Comptt. Delhi 2012)

Answer:
Total emf of the circuit
=8V – 4V = 4V
Since two resistors 30 and 60 are connected in parallel, their combined resistance is

Since all resistors are in series,

R = 0.5 + 4.5 + 2 + 1 = 8Ω

0.5Ω A current will flow in 3 resistors, i.e., 0.5Ω, 4.5Ω and 1Ω.
Current through resistors 30 and 60

9. In the two electric circuits shown in the figure, determine the reading of ideal ammeter (A) and the ideal
voltmeter (V). (Comptt. Delhi 2012)

Answer:
(i) In circuit (a)
Total emf = 15 V, Total Resistance = 2Ω

Potential difference between the terminals of 6 V battery

V = E – iR = [6 – (7.5 × 1) = -1.5 V
(ii) In circuit (b)
Effective emf = (9 – 6)V = 3V,
Total Resitance = 2Ω

Potential Difference across 6 V cell,

V = E – (- I)R = V + IR
(∵ Current is in opposite direction to 6 V cell)
= 6 + 1.5 × 1 = 7.5 V

10. A cell of emf ‘E’ and internal resistance V is connected across a variable load resistor R. Draw the
plots of the terminal voltage V versus
(i) R and (ii) the current I.
It is found that when R = 4 Ω, the current is 1 A and when R is increased to 9 Ω, the current reduces to 0.5
A. Find the values of the emf E and internal resistance r. (Delhi 2012)
Answer:
11. Define the current sensitivity of galvanometer. Write its S.I. unit.

Figure shows two circuits each having a galvanometer and a battery of 3 V.

When the galvanometers in each arrangment do not show any deflection, obtain the ratio R1/R2.
(All India 2012)
Answer:
Current sensitivity of a galvanometer : Current sensitivity of a moving coil galvanometer is defined as
deflection produced in the galvanometer per unit current passed through it. Its SI unit is rad A -1
(i) For circuit on the left side—
If G has zero deflection, then

(ii) For circuit on the right side—

If galvanometer and battery are inter-changed, there is no change in the circuit as such.

12. Calculate the value of the resistance R in the circuit shown in the figure so that the current is 0.2 A.
What would be the potential difference between points A and B?

Answer:

13. Using Kirchoff’s rules determine the value of unknown resistance R into circuit so that no current
flows through 4ω resistance. Also find the potential difference between A and D. (Delhi 2012)
 Answer:

15. State Kirchhoff’s rules. Apply Kirchhoff’s rales to the loops ACBPA and ACBQA to write the expressions
for the currents I1, I2 and I3 in the network. (All India 2010)

Answer:
Kirchhoff’s rules :
(i) Kirchhoff’s junction rule : At any junction, the sum of the currents entering the junction is equal to the sum
of currents leaving the junction.
(ii) Kirchhoff’s loop rule : The algebraic sum of changes in potential-in any closed loop involving resistors and
cells is zero.
(b) According to Kirchhoff’s junction rule,
Numerical : Applying Kirchhoff’s rule in loop ACBPA, we have

In loop ACBQA, by Kirchhoff’s rule, we have

12I3 + 1I2 = 10 …(ii)
Subtracting (i) from (ii), we have

16. Write any two factors on which internal resistance of a cell depends. The reading on a high resistance
voltmeter, when a cell is connected across it, is 2.0 V.

When the terminals of the cell are also connected to a resistance of 3Ω as shown in the circuit, the voltmeter
reading drops to 1.5 V. Find the internal resistance of the cell. (All India 2010)
Answer:
Factors affecting internal resistance of a cell :

(a) Internal resistance of a cell depends upon :

(i) nature of electrolyte of the cell
(ii) separation between the electrodes.
(b) Given: emf of cell, e = 2.2 V, R = 5 Ω, V = 1.8 V

Let r be the internal resistance of the cell

17. A number of identical cells n, each of emf e, internal resistance r connected in series are charged by a
d.c. source of emf elr using a resistor R.
(i) Draw the circuit arrangement.
(ii) Deduce the expressions for
(a) the charging current and
 (b) the potential difference across the combination of the cells. (Delhi 2008)
Answer:

Short answers

1. Write a relation between current and drift veloc¬ity of electrons in a conductor. Use this relation to explain
how the resistance of a conductor changes with the rise in temperature. (Comptt. Delhi 2013)
Answer:
Relation between current and drift velocity :

On increasing temperature, the resistance of the conductor increases due to increase in frequent collisions of
electrons with each other, resulting into decrease in the drift velocity.

Question 2.
Use Kirchhoff’s rules to determine the value of the current I1 flowing in the circuit shown in the figure.
(Comptt. Delhi 2013)

Answer:
Using Kirchoff’s first law at junction E, we get
I3 = I3 + I2
In loop ABCDA, using Kirchoff’s second law, we get
80 – 20 I2 + 30 I1 = 0

So (-) sign of current indicates that the direction of current is opposite to that as shown in the circuit diagram.

Question 3.
Draw a graph showing variation of resistivity with temperature for nichrome. Which property of nichrome is
used to make standard resistance coils? (Comptt. All India 2013)
Answer:
Temperature coefficient of resistivity (α) is very small for nichrome.

Question 4.
A battery of emf E and internal resistance r when connected across an external resistance of 12 ohm, produces
a current of 0.5 A. When connected across a resistance of 25 ft, it produces a current of 0.25 A. Determine
(i) the emf and
(ii) the internal resistance of the cell. (Comptt. All India 2013)

Question 5.
Define mobility of a charge carrier. Write the relation expressing mobility in terms of relaxation time. Give its
SI unit. (Comptt. All India 2013)
Answer:
Mobility. Mobility of electron p is defined as the magnitude of the drift velocity per unit electric field E
Question 6.
A uniform wire of resistance 12 Ω is cut into three pieces so that the ratio of the resistances R 1 : R2 : R3 = 1 : 2
: 3 and the three pieces are connected to form a triangle across which a cell of emf 8V and internal resistance

1 Ω is connected as shown. Calculate the current through each part of the circuit. (Comptt. All India 2013)
Answer:

Question 7.
State Kirchhoff’s rules. Explain briefly how these rules are justified. (Delhi 2014)
Answer:
Kirchhoff’s rules.

1. Kirchhoff’s junction rule : At any junction, the sum of the currents entering the junction is equal to the
sum of currents leaving the junction.
2. Kirchhoff’s loop rule : The algebraic sum of changes in potential in any closed loop involving resistors
and cells is zero.

These two laws are justified on the basis of law of conservation of charge and the law of conservation of
energy respectively.

Question 8.
A cell of emf ‘E’ and internal resistance V is connected across a variable resistor ‘R’. Plot a graph showing
variation of terminal voltage ‘V’ of the cell versus the current ‘I’. Using the plot, show how the emf of the cell
and its internal resistance can be determined. (All India 2014)
Answer:

Intercept of Y-axis will give the value of ‘E’; while the slope of the line will give the value of internal
resistance.

Question9.
Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area
1.0 × 10 -7 m2 carrying a current of 1.5 A. Assume the density of conduction electrons to be 9 × 10 28 m-3. (All
India2014)
Answer:

Question 10.
Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 2.5 × 10-
7
m2 carrying a current of 1.8 A. Assume the density of conduction electrons to be 9 × 10 28 m-3. (All India
2014)
Answer:

Question 11.
Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 2.5 × 10-
7
m2 carrying a current of 2.7 A. Assume the density of conduction electrons to be 9 × 10 28 m-3. (All India
2014)
Answer:
0.75 × 10-3 ms-1

Question 12.
Draw a plot showing the variation of resistivity of a
(i) conductor and
(ii) semiconductor, with the increase in temperature.
How does one explain this behaviour in terms of number density of charge carriers and the relaxation time?
(Comptt. Delhi 2014)
Answer:
(i) For conductor :
(ii) For semiconductor :
(iii) Behaviour :

In conductors, average relaxation time decreases with increase in temperature, resulting in an increase in
resistivity.
In semiconductors, the increase in number density (with increase in temperature) is more than the decrease in
relaxation time; the net result is, therefore, a decrease in resistivity.

Question 13.
Distinguish between emf (ε) and terminal voltage (V) of a cell having internal resistance r. Draw a plot
showing the variation of terminal voltage (V) vs the current (I) drawn from the cell. Using this plot, how does
one determine the internal resistance of the cell?
– (Comptt All India 2014)
Answer:
emf is the potential difference between two terminals of the cell, when no current is drawn from the cell I
while
• terminal voltage is the potential difference between two terminals when current passes through it.
• negative slope of the graph gives internal resistance.

Question 14.
Use Kirchhoff’s rules to obtain conditions for the balance condition in a Wheatstone bridge. (Delhi 2015)
Answer:
Conditions for the balance condition in a Wheatstone bridge :

Applying Kirchhoff’s loop rule to closed loop ADBA,

This is the required balance condition in a Wheatstone bridge arrangement.

Question 15.
Use Kirchhoff’s rules to determine the potential difference between the points A and D when no current flows
in the arm BE of the electric network shown in the figure.

Answer:
Let us consider the loop ABED.
Using Kirchhoff’s second law, we have

Question 16. Calculate the current drawn from the battery by the network of resistors shown in the figure.
(Comptt. All India 2015)

Answer: Given : Circuit diagram can be rearranged as shown below :

It forms a wheatstone’s bridge

It is the condition of null point when no current flows through BD arm, i.e. 5 Ω.
Resistances P = (1 Ω) and R = (2 Ω) are in series;

Similarly, Resistances Q = (2 Ω) and S in series,

Question 17.
Using the concept of drift velocity of charge carriers in a conductor, deduce the relationship between current
density and resistivity of the conductor. (Comptt. Delhi 2015)
Answer:
The drift velocity is given by,

Question18.
Two cells of emfs 1.5 V and 2.0 V having internal resistance 0.2 Ω and 0.3 Ω respectively are connected in
parallel. Calculate the emf and internal resistance of the equivalent cell.(Delhi 2016)
Answer:
Given : E1 = 1.5 V, E2 = 2.0 V,
Question 19.
A battery of emf 12V and internal resistance 2 Ω is connected to a 4 Ω resistor as shown in the figure.
(a) Show that a voltmeter when placed across the cell and across the resistor, in turn, gives the
(b) To record the voltage and the current in the circuit, why is voltmeter placed in parallel and ammeter in
series in the circuit? (All India)

Answer:

We find from the equations (i) and (ii), the voltmeter gives the same reading, i.e. 8 V.
(b) An ammeter is connected in series because same current is flowing in the circuit, while voltmeter is
connected in parallel to measure potential difference across two points in the circuit.

Question 20.
The figure shows a plot of terminal voltage ‘V’ versus the current ‘i’ of a given cell. Calculate from the graph
(a) emf of the cell and
(b) internal resistance of the cell. (Comptt. Outside Delhi 2017)

Answer:

Question 21.
A cell of emf 4 V and internal resistance 1 Ω is connected to a d.c. source of 10 V through a resistor of 5 Ω.
Calculate the terminal voltage across the cell during charging.
Answer:

A battery of emf 10 V and internal resistance 3Ω is connected to a resistor. If the current in the circuit is 0.5 A,
find
(i) the resistance of the resistor;
(ii) the terminal voltage of the battery. (Comptt. Delhi 2012)
Answer:

Question 22.
A battery of emf 6 V and internal resistance 2Ω is connected to a resistor. If the current in the circuit is 0.25 A,
find
(i) the resistance of the resistors;
(ii) the terminal voltage of the battery. (Comptt. Delhi)
Answer:

Question 23.
Define current sensitivity and voltage sensitivity of a galvanometer. Increasing the current sensitivity may not
necessarily increase the voltage sensitivity of a galvanometer. Justify. (All India 2009)
Answer:
Current sensitivity is defined as the deflection produced in the galvanometer when unit current is passed
through its coil.
Voltage sensitivity is defined as the deflection produced in the galvanometer when unit voltage is applied
across the coil of the galvanometer.

Since Vs = IsR, increase in current sensitivity may

not necessarily increase the voltage sensitivity. It may be affected by the resistance used.
Question 24.
A wire of 15 Ω resistance is gradually stretched to double its original length. It is then cut into two equal parts.
These parts are then connected in parallel across a 3.0 volt battery. Find the current drawn from the battery.
(All India 2009)
Answer:
R = 15 Ω
On stretching to double its original length, the resistance becomes R 1 = 60 Ω, as on stretching volume is
constant and Rα l2.
The two cut parts will have a resistance of 30 Ω each as they are connected in parallel, the

Question 25.
A wire of 20 Ω resistance is gradually stretched to double its original length. It is then cut into two equal parts.
These parts are then connected in parallel across a 4.0 volt battery. Find the current drawn from the battery.
(All India 2009)
Answer:
On stretching, the resistance of the wire will get to four times, i.e., 80 Ω as volume is constant and
R α l2.
So the two equal parts will have a resistance of 40 Ω each.
When connected in parallel, the equivalent resistance will be 20 Ω
 MOUNT LITERA ZEE SCHOOL, MYLAUDY
LESSON 13-NUCLEI(2023-2024)

Question 1.
An electron and alpha particle have the same de-Broglie wavelength associated with them. How are their
kinetic energies related to each other?
(Delhi 2008)
Answer:

Question 2.
State two characteristic properties of nuclear force. (All India 2008)
Answer:
(i) Nuclear forces are the strongest force in nature.
(ii) They are saturated forces.
(iii) They are charge independent.

Question 3.
Two nuclei have mass numbers in the ratio 1: 2. What is the ratio of their nuclear densities? (Delhi 2009)
Answer:

Question 4.
Two nuclei have mass number in the ratio 1 : 3. What is the ratio of their nuclear densities? (Delhi 2009)
Answer:
Since nuclear density is independent of the mass number, the ratio of nuclear densities will be 1:1.

Question 5.
Two nuclei have mass numbers in the ratio 2 : 5. What is the ratio of their nuclear densities? (Delhi 2009)
Answer:
Nuclear density is independent of mass number, so the ratio will be 1 : 1.

Question 6.
Two nuclei have mass numbers in the ratio 1: 8. What is the ratio of their nuclear radii? (All India 2009)
Answer:

Question 7.
Two nuclei have mass numbers in the ratio 8:125. What is the ratio of their nuclear radii? (All India 2009)
Answer:

Question 8.
Two nuclei have mass numbers in the ratio 27:125. What is the ratio of their nuclear radii? (All India 2009)
Answer:

Question 9.
Write any two characteristic properties of nuclear force. (All India 2009)
Answer:
1. Nuclear forces are strongest forces in nature.
2. Nuclear forces are charge independent.

Question 10.
Write the relationship between the size and the atomic mass number of a nucleus. (Comptt. All India 2012)
Answer:
Relationship between the size and the atomic mass number of a nucleus is

Question 11.
How is the radius of a nucleus related to its mass number A? (Comptt. All India 2012)
Answer:
Nuclei Class 12 Important Questions Short Answer Type (SA-I)

Question 12.
Calculate the energy released in MeV in the following nuclear reaction:

(All India 2012)

Answer:

Question 13.
(a) The mass of a nucleus in its ground state is always less than the total mass of its constituents – neutrons and
protons. Explain.
(b) Plot a graph showing the variation of potential energy of a pair of nucleons as a function of their separation.
(All India 2016)
Answer:
(a) When nucleons approach each other to form a nucleus, they strongly attract each other. Their potential
energy decreases and becomes negative. It is this potential energy which holds the nucleons together in the
nucleus. The decrease in’ potential energy results in the decrease in the mass of the nucleons inside the
nucleus.

Question 14.
A heavy nucleus X of mass number 240 and binding energy per nucleon 7.6 MeV is split into two fragments Y
and Z of mass numbers 110 and 130. The binding energy of nucleons in Y and Z is 8.5 MeV per nucleon.
Calculate the energy Q released per fission in MeV. (Delhi 2016)
Answer:

∴ Gain in binding energy for nucleon = 8.5 – 7.6 = 0.9 MeV

Hence total gain in binding energy per nucleus fission = 240 × 0.9 = 216 MeV

Question 15.
Draw a plot of potential energy of a pair of nucleons as a function of their separation. Write two important
conclusions which you can draw regarding the nature of nuclear forces. (All India 2016)
Answer:
Two important conclusions :
(i) Nuclear force between two nucleons falls rapidly to zero as their distance is more than a few femtometres.
This explains constancy of the binding energy per nucleon for large-size nucleus.

(ii) Graph explains that force is attractive for distances larger than 0.8 fin and repulsive for distances less than
0.8 fm.

Question 16.
Draw a plot of the binding energy per nucleon as a function of mass number for a large number of nuclei, 2 ≤
A ≤ 240. How do you explain the constancy of binding energy per nucleon in the range 30 < A < 170 using the
property that nuclear force is short-ranged? (All India 2016)
Answer:
(a) The constancy of the binding energy in the range 30 < A < 170 is a consequence of the fact that the nuclear
force is short ranged.
If a nucleon can have a maximum of p neighbours within the range of nuclear force, its binding energy would
be proportional to p. Since most of the nucleons in a large nucleus reside inside it and not on the surface, the
change in binding energy per nucleon would be small. The binding energy per nucleon is a constant and is
approximately equal to pk. The property that a given nucleon influences only nucleons close to it, is referred to
as saturation property of the nuclear force.

(b) Nuclear force is short-ranged for a sufficiently large nucleus. A nucleon is under the influence of only some
of its neighbours, which come within the range of the nuclear force. If a nucleon can have maximum of P
neighbours within the range of nuclear force, its binding energy would be proportional to ‘P’ Thus on
increasing ‘A’ by adding nucleons binding energy will remain constant.

Question 17.
If both the number of protons and neutrons in a nuclear reaction is conserved, in what way is mass converted
into energy (or vice verse)? Explain giving one example. (Comptt. Delhi 2011)
Answer:
Explanation for release of energy in a nuclear reaction : Since proton number and neutron number are
conserved in a nuclear reaction, the total rest mass of neutrons and protons is the same on either side of the
nuclear reaction.
But total binding energy of nuclei on the left side need not be the same as that on the right hand side. The
difference in binding energy causes a release of energy in the reaction.
Examples :
Question 18.

(Delhi 2016)
Answer:

Question 19.
Calculate the energy in fusion reaction :

(Delhi 2016)
Answer:

Question 20.
If both the number of protons and the number of neutrons are conserved in each nuclear reaction, in what way
is mass converted into energy (or vice-versa) in a nuclear reaction? Explain. (Comptt. All India 2016)
Answer:
The number of protons and neutrons in a nuclear reaction are conserved but the total mass is not conserved.
The total mass of the free protons and neutrons is more than their total mass within the nucleus. The lost mass
(= ∆m) known as ‘mass defect’, gets converted into energy as per the relation E = (∆m)c2 (c is the velocity of
light)

Question 21.
Write two characteristic features of nuclear force.
(b) Draw a plot of potential energy of a pair of nucleons as a function of their separation. (Comptt. All India
2017)
Answer:(a) Nuclear forces. The strong forces of attraction which hold together the nucleons (neutrons and
protons) in the tiny nucleus of an atom are called nuclear forces.
Important properties (characteristics):
1. Nuclear forces are independent of charge (These act between a pair of neutrons, between a pair of protons
and between a proton and a neutron).
2. Nuclear forces are the strongest forces in nature.
3. Nuclear forces are very short range forces.
4. Nuclear forces are non-central forces.
5. Nuclear forces are dependent on spin.

(b) A plot of the potential energy between two nucleons as a function of distance is shown in the diagram.

Important conclusions from the graph :

(i) The nuclear force is much stronger than the Coulomb force acting between charges or the gravitational
forces between masses. The nuclear binding force has to dominate over the Coulomb repulsive force between
protons inside the nucleus. This happens only because the nuclear force is much stronger than the coulomb
force. The gravitational force is much weaker than even Coulomb force.
(ii) The nuclear force between two nucleons falls rapidly to zero as their distance is more than a few
femtometers. This leads to saturation of forces in a medium or a large-sized nucleus, which is the reason for
the constancy of the binding energy per nucleon.
(iii) The nuclear force between neutron- neutron, proton-neutron and proton-proton is approximately the same.
The nuclear force does not depend on the electric charge.

Question 22.
Distinguish between nuclear fission and fusion. Explain how the energy is released in both the processes.
(Comptt. All India 2017)
Answer:
In nuclear fission a heavy nucleus breaks up into smaller nuclei accompanied by release of energy; whereas in
nuclear fusion two light nuclei combine to form a heavier nucleus accompanied by release of energy.
In both the cases, some mass (= mass defect) gets converted into energy as per the relation :

Nuclei Class 12 Important Questions Short Answer Type SA-II

Question 23.
Draw a plot showing the variation of binding energy per nucleon versus the mass number (A). Explain with the
help of this plot the release of energy in the processes of nuclear fission and fusion. (All India 2009)
Answer:
1. Nuclear fission : Binding energy per nucleon is smaller for heavier nuclei than the middle ones i.e. heavier
nuclei are less stable. When a heavier nucleus splits into the lighter nuclei, the B.E./nucleon changes
(increases) from about 7.6 MeV to 8.4 MeV. Greater binding energy of the product nuclei results in the
liberation of energy. This is what happens in nuclear fission which is the basis of the atom bomb.

2. Nuclear fusion : The binding energy per nucleon is small for light nuclei, i.e., they are less stable. So when
two light nuclei combine to form a heavier nucleus, the higher binding energy per nucleon of the latter results
in the release of energy.

Question 24.
(i) What characteristic property of nuclear force explains the constancy of binding energy per nucleon (BE/A)
in the range of mass number ‘A’ lying 30 < A < 170?
(ii) Show that the density of nucleus over a wide range of nuclei is constant- independent of mass number A.
(Delhi 2009)
Answer:
(i) Saturation is the Short range nature of nuclear forces
(ii) Let A be the mass number and R be the radius of a nucleus
If m is the average mass of a nucleon, then
Mass of nucleus = mA

Clearly, nuclear density is independent of mass number A or the size of the nucleus.

Question 25.
Draw a plot of potential energy of a pair of nucleons as a function of their separations. Mark the regions where
the nuclear force is
(i) attractive and
(ii) repulsive. Write any two characteristic features of nuclear forces.
Answer:
The graph indicates that the attractive force between the two nucleons is strongest at a separation r 0 = 1 fm. For
a separation greater than the force is attractive and for separation less than r 0, the force is strongly repulsive.
Two characteristic features of nuclear forces :
1. Strongest interaction
2. Short-range force
3. Charge independent character (any two)

Question 26.
Answer the following, giving reasons:
(i) Why is the binding energy per nucleon found to be constant for nuclei in the range of mass number (A)
lying between 30 and 170?
(ii) When a heavy nucleus with mass number A = 240 breaks into two nuclei, A = 120, energy is released in’
the process.
(iii) In β-decay, the experimental detection of neutrinos (or antineutrinos) is found to be extremely difficult.
(Comptt. All India 2011)
Answer:
(i) Nuclear forces are short ranged. For a particular nucleon inside a sufficiently large nucleus will be under the
influence of some of its neighbours which come within the range of the nuclear force. The property that a
given nucleon influences only nucleons close to it is also referred to as saturation property of the nuclear force.
(ii) The binding energy per nucleon of the parent nucleus is less than those of the two daughter nuclei. It is this
increased binding energy that gets released in this process.
(iii) Neutrinos are chargeless and massless particles, whose interaction with other particles is almost negligible.
Hence, they can pass through very large quantity of matter with-out getting detected.

Question 27.
(a) In a typical nuclear reaction, e.g.

although number of nucleons is conserved, yet energy is released. How? Explain.

(b) Show that nuclear density in a given nucleus is independent of mass number A. (Delhi 2011)
Answer:
(a) In all types of nuclear reactions, the law of conservation of number of nucleons is followed. But during the
reaction, the mass of the final product is found to be slightly less than the sum of the masses of the reactant
components. This difference in mass of a nucleus and its constituents is called mass defect. So, as per mass
energy relation E = (∆M)c2, energy is released. In the given reaction the sum of the masses of two deutrons is
more than the mass of helium and neutron. Energy equivalent of mass defect is released.

Question 28.

though the conserved on both sides of the reaction, yet the energy is released. How? Explain.
(b) Draw a plot of potential energy between a pair of nucleons as a function of their separation. Mark the
regions where potential energy is
(i) positive and
(ii) negative. (Delhi 2011)
Answer:
(a) Since the total binding energy of nuclei on the left side of the reaction is not the same as the total binding
energy of nucleus on the right hand side, this difference of binding energy appears as the energy released.

For separation (r) ≤ 0.8 fermi

Force is repulsive
For r > 0.8 fermi force will be attractive.

Question 29.
(i) Define the term ‘mass defect’ of a nucleus. How is it related with its binding energy?
(ii) Determine the Q-value of the following reaction:

(Comptt. All India 2014)

Answer:
(i) (a) The mass defect of a nucleus equals the difference between the total mass of its constituents and the
mass of the nucleus itself.

Question 30.
Distinguish between nuclear fission and fusion. Show how in both these processes energy is released.
Calculate the energy release in MeV in the deuterium-tritium fusion reaction :

(Delhi 2015)
Answer:
(a) The breaking of heavy nucleus into smaller fragments is called nuclear fission; while the joining of lighter
nuclei to form a heavy nucleus is called nuclear fusion.
(b) Binding energy per nucleon of the daugher nuclei, in both processess, is more than that of the parent nuclei.
The difference in binding energy is released in the form of energy. In both processes some mass gets converted
into energy.
(c) Energy released

Question 31.
(a) Write three characteristic properties of nuclear force.
(b) Draw a plot of potential energy of a pair of nucleons as a function of their separation. Write two important
conclusions that can be drawn from the graph. (All India 2015)
Answer:
(a) Nuclear forces. The strong forces of attraction which hold together the nucleons (neutrons and protons) in
the tiny nucleus of an atom are called nuclear forces.
Important properties (characteristics):
1. Nuclear forces are independent of charge (These act between a pair of neutrons, between a pair of protons
and between a proton and a neutron).
2. Nuclear forces are the strongest forces in nature.
3. Nuclear forces are very short range forces.
4. Nuclear forces are non-central forces.
5. Nuclear forces are dependent on spin.

(b) A plot of the potential energy between two nucleons as a function of distance is shown in the diagram.

Important conclusions from the graph :

(i) The nuclear force is much stronger than the Coulomb force acting between charges or the gravitational
forces between masses. The nuclear binding force has to dominate over the Coulomb repulsive force between
protons inside the nucleus. This happens only because the nuclear force is much stronger than the coulomb
force. The gravitational force is much weaker than even Coulomb force.
(ii) The nuclear force between two nucleons falls rapidly to zero as their distance is more than a few
femtometers. This leads to saturation of forces in a medium or a large-sized nucleus, which is the reason for
the constancy of the binding energy per nucleon.
(iii) The nuclear force between neutron- neutron, proton-neutron and proton-proton is approximately the same.
The nuclear force does not depend on the electric charge.
Question 32.
(a) Draw a graph showing the variation of binding energy per nucleon (BE/A) vs mass number A for the nuclei
in 20 ≤ A ≤ 170.
(b) A nucleus of mass number 240 and having binding energy/nucleon 7.6 MeV splits into two fragments Y, Z
of mass numbers 110 and 130 respectively. If the binding energy/ nucleon of Y, Z is equal to 8.5 MeV each,
calculate the energy released in the nuclear reaction. (Comptt. All India 2017)
Answer:

Conclusions :
(i) The force is attractive and sufficiently strong to produce a binding energy of a few MeV per nucleon.

Question 33.
 MOUNT LITERA ZEE SCHOOL, MYLAUDY
LESSON 14-SEMICONDUCTOR(2023-2024)
Question 1.
The graph shown in the figure represents a plot of current versus voltage for a given semi-conductor. Identify
the region, if any, over which the semi-conductor has a negative resistance.

Answer:
Between the region B and C, the semiconductor has a negative resistance.
Question 2.
Show variation of resistivity of Si with temperature in a graph. (Delhi 2014)
Answer:

Question 3.
Plot a graph showing variation of current versus voltage for the material GaAs. (Delhi 2014)
Answer:
A Graph showing variation of current versus voltage for GaAs

Question 4.
Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why, a p-type
semiconductor crystal is electrically neutral although nh >> ne? (Delhi 2008)
Answer:
(ii) In a p-type semiconductor, the trivalent impurity atom shares its three valence electrons with the three
tetravalent host atoms while the fourth bond remains unbounded. The impurity atom as a whole is electrical
neutral. Hence the p-type semiconductor is also neutral.
Question 5.
Name the semiconductor device that can be used to regulate an unregulated dc power supply. With the help of
I-V characteristics of this device, explain its working principle. (Delhi 2011)
Answer:
Name : Zener diode is used to regulate an unregulated dc power supply.

Working principle : When a zener diode is operated in the reverse break down region, the voltage across it
remains practically constant (equal to the break down voltage V-I) for a large change in the reverse current.

Question 6.
What happens to the width of depletion layer of a p-n junction when it is
(i) forward biased,
(ii) reverse biased? (Delhi 2011)
Answer:
(i) In forward biased, the width of depletion layer of a p-n junction decreases.
(ii) In reverse biased, the width of depletion layer of a p-n junction increases

Question 7.
Assuming that the two diodes Dj and D2 used in the electric circuit shown in the figure are ideal, find out the
value of the current flowing through 1Ω resistor. (Comptt. Delhi 2013)
Answer:
Since the diodes used are ideal, the diode Dj in forward bias will conduct the current in forward direction,
while diode D2 in reverse bias will not allow any current to flow.
As such, 2Ωwith D1 and 1Ω are in series, the net resistance of the circuit will be
Hence the value of the current flowing through 1Ω resistor = 2A

Question 8.
Assuming that the two diodes D1 and D2 used in the electric circuit shown in the figure are ideal, find out the
value of the current flowing through 2.5 Ω resistor. (Comptt. Delhi 2013)
Answer:

Value of the current flowing through 2.5 Ω resistor = 2.5 A

Question 9.
Assuming that the two diodes D1 and D2 used in the electric circuit shown in the figure are ideal, find out the
value of the current flowing through 2 Ω resistor. (Comptt. Delhi 2013)
Answer:
D1 will conduct current while D2 will not allow Hence R = 3Ω + 2Ω = 5Ω As such, 2Ω with D1 and 2Ω are in
series, the net resistance of the circuit will be

∴ Value of the current flowing through 2Ω resistor = 0.4A

Question 10.
With the help of a suitable diagram, explain the formation of depletion region in a p-n junction. How does its
width change when the junction is
(i) forward biased, and
(ii) reverse biased? (All India 2008)
Answer:
As soon as a p-n junction is formed, the majority charge carriers begin to diffuse from the regions of higher
concentration to the regions of lower concentrations. Thus the electrons from the n-region diffuse into the p-
region and where they combine with the holes and get neutralised. Similarly, the holes from the p-region
diffuse into the n-region where they combine with the electrons and get neutralised. This process is called
electron-hole recombination.
The p-region near the junction is left with immobile -ve ions and n-region near the junction is left with +ve
ions as shown in the figure. The small region in the vicinity of the junction which is depleted of free charge
carriers and has only immobile ions is called the depletion layer. In the depletion region, a potential difference
VB is created, called potential barrier as it creates an electric field which opposes the further diffusion of
electrons and holes.
(i) In forward biased, the width of depletion region is decreased.
(ii) In reverse biased, the width of depletion region is increased.

Question 11.
(i) With the help of circuit diagrams, distinguish between forward biasing and reverse biasing of a p-n junction
diode.
(ii) Draw V-I characteristics of a p-n junction diode in
(a) forward bias,
(b) reverse bias. (All India 2009)
Answer:

Question 12.
Draw V-I characteristics of a p-n junction diode.
Answer the following questions, giving reasons:
(i) Why is the current under reverse bias almost independent of the applied potential upto a critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage.
Name any semiconductor device which operates under the reverse bias in the breakdown region.
(All India 2012)
Answer:
(i) In reverse bias of p-n junction diode the small current is due to minority carrier and hence resistance is also
very high. Increase in voltage leads to a very-very small increase in reverse bias currents so we conclude that
in reverse bias reverse current is almost independent of applied potential upto a critical voltage because after
this critical voltage, current increases suddenly.

(ii) In reverse bias, reverse current through junction diode is due to minority charge carriers. As reverse bias
voltage is increased, electric field at junction becomes significant. When reverse bias voltage becomes equal to
zener voltage, electric field strength across junction becomes high. Electric field across junction is sufficient to
pull valence electrons from the atom on p- side and accelerate them towards n-side. The movement of these
electrons across the function account for high current which is observed at breakdown reverse voltage. Zener
diode and photo diode operate under reverse bias.

Question 13.
Write any two distinguishing features between conductors, semiconductors and insulators on the basis of
energy band diagrams. (All India 2012)
Answer:
Distinguishing features between conductors, semiconductors and insulators :
(i) Insulator. In insulator, the valence band is completely filled. The conduction band is empty and forbidden
energy gap is quite large. So no electron is able to go from valence band to conduction band even if electric
field is applied. Hence electrical conduction is impossible. The solid/ substance is an insulator.
(ii) Conductors (Metals). In metals, either the conduction band is partially filled or the conduction and valence
band partly overlap each other. If small electric field is applied across the metal, the free electrons start moving
in a direction opposite to the direction of electric field. Hence, metal behaves as a conductor.
(iii) Semiconductors. At absolute zero kelvin, the conduction band is empty and the valence band is filled. The
material is insulator at low temperature. However the energy gap between valence band and conduction band is
small. At room temperature, some valence electrons acquire thermal energy and jump to conduction band
where they can conduct electricity. The holes left behind in valence band act as a positive charge carrier.

Question 14.
Distinguish between «-type and p-type semi-conductors on the basis of energy band diagrams. Compare their
conductivities at absolute zero temperature and at room temperature. (Comptt. Delhi 2014)
Answer:
Distinction between n-type and p-type semiconductors on the basis of energy level diagram :

(i) In n-type semi conductors an extra energy level (called donor energy level) is produced just below the
bottom of the conduction band, while in the p-type semiconductor, this extra energy band (called acceptor
energy level) is just above the top of the balanced band.
(ii) In n-type semiconductors, most of the electrons come from the donor impurity while in p-type
semiconductor, the density of holes in the valence band is predominantly due to the impurity in the extrinsic
semiconductors.
(iii) At absolute zero temperature conductivities of both types of semi-conductors will be zero.
(iv) For equal doping, an n-type semiconductor will have more conductivity than a p-type semiconductor, at
room temperature.

Question 15.
Draw the energy band diagram of
(i) n-type and
(ii) p-type semiconductor at temperature, T > OK. In the case n-type Si semiconductor, the donor level is
slightly below the bottom of conduction band. whereas in p-type semiconductor, the aceceptor energy level is
slightly above the top of the valence band. Explain, what role do these energy levels play in conduction and
valence bands. (Comptt. All India 2014)
Answer:
For energy level diagrams of n-type and p-type semiconductors:
Distinction between n-type and p-type semiconductors on the basis of energy level diagram :

(i) In n-type semi conductors an extra energy level (called donor energy level) is produced just below the
bottom of the conduction band, while in the p-type semiconductor, this extra energy band (called acceptor
energy level) is just above the top of the balanced band.
(ii) In n-type semiconductors, most of the electrons come from the donor impurity while in p-type
semiconductor, the density of holes in the valence band is predominantly due to the impurity in the extrinsic
semiconductors.
(iii) At absolute zero temperature conductivities of both types of semi-conductors will be zero.
(iv) For equal doping, an n-type semiconductor will have more conductivity than a p-type semiconductor, at
room temperature.

Role of energy levels in conduction and valence bands : In the energy band diagram of n-type Si
semiconductor, the donor energy level ED is slightly below the bottom EC of the conduction band and electrons
from this level moves into conduction band with very small supply of energy. At room temperature, most of
the donor atoms get ionised, but very few (~ 10-12) atoms of Si atom get ionised. So the conduction band will
have most electrons coming from donor impurities, as shown in the figure.

For p-type semiconductor, the acceptance energy level EA is slightly above the top EV of the valence band.
With very small supply of energy, an electron from the valence band can jump to the level E A and ionise the
acceptor negatively. At room temperature, most of the acceptor atoms get ionised leaving holes in the valence
band.

Question 16.
(a) Explain the formation of depletion layer . and potential barrier in a p-n junction.

(b) In the figure given below the input waveform is converted into the output waveform by a device ‘X’. Name
the device and draw its circuit diagram.

Answer:
(a)
As soon as a p-n junction is formed, the majority charge carriers begin to diffuse from the regions of higher
concentration to the regions of lower concentrations. Thus the electrons from the n-region diffuse into the p-
region and where they combine with the holes and get neutralised. Similarly, the holes from the p-region
diffuse into the n-region where they combine with the electrons and get neutralised. This process is called
electron-hole recombination.

The p-region near the junction is left with immobile -ve ions and n-region near the junction is left with +ve
ions as shown in the figure. The small region in the vicinity of the junction which is depleted of free charge
carriers and has only immobile ions is called the depletion layer. In the depletion region, a potential difference
VB is created, called potential barrier as it creates an electric field which opposes the further diffusion of
electrons and holes.
(i) In forward biased, the width of depletion region is decreased.
(ii) In reverse biased, the width of depletion region is increased.

(b) Device ‘X’ given here represents the full wave rectifier.
Working of full wave rectifier : AC input to be rectified is applied to the primary (P) of a step up transformer.
Two ends of the secondary of the transformer are connected to P end of two junction diodes. It is centre-
trapped at M which is connected to an end through the load resistance RL. Two crystals

are formed biased and reverse biased alternately. During half cycle of A.C. input, current flows through one
crystal diode and during the next half cycle the current flows through the other crystal diode. However across
the load RL, current always flows in the same direction. Thus a continuous pulsating D.C. output voltage is
obtained across the load resistance RL. This rectified signal is made smooth with the help of the fitter circuit.

Question 17.
Draw the ‘Energy bands’, diagrams for a
(i) pure semiconductor
(ii) insulator.
How does the energy band, for a pure semiconductor, get affected when this semiconductor is doped with
(a) an acceptor impurity
(b) donor impurity? Hence discuss why the ‘holes’, and the ‘electrons’ respectively, become the ‘majority
charge carriers’ in these two cases? Write the two processes involved in the formation of p-n junction.
(Comptt. All India 2015)
Answer:
‘Energy Band’ diagrams :
Distinguishing features between conductors, semiconductors and insulators :
(i) Insulator. In insulator, the valence band is completely filled. The conduction band is empty and forbidden
energy gap is quite large. So no electron is able to go from valence band to conduction band even if electric
field is applied. Hence electrical conduction is impossible. The solid/ substance is an insulator.

(ii) Conductors (Metals). In metals, either the conduction band is partially filled or the conduction and valence
band partly overlap each other. If small electric field is applied across the metal, the free electrons start moving
in a direction opposite to the direction of electric field. Hence, metal behaves as a conductor.

(iii) Semiconductors. At absolute zero kelvin, the conduction band is empty and the valence band is filled. The
material is insulator at low temperature. However the energy gap between valence band and conduction band is
small. At room temperature, some valence electrons acquire thermal energy and jump to conduction band
where they can conduct electricity. The holes left behind in valence band act as a positive charge carrier.

(a) When the semiconductor is doped with an acceptor impurity, thereby results in an additional energy level a
little above the top of the valence band.
(b) The donor impurity results in an additional energy level a little below the bottom of the
conduction band.

In the first case, electrons from the valence band, easily jump over to the acceptor level, leaving ‘holes’
behind. Hence, ‘holes’ becomes the majority charge carriers.

In the second case, electrons from the donor level, easily ‘jump over’ to the conduction band. Hence, electrons
become the majority charge carriers. The two processes involved in the formation of the p-n junction are :
(i)Diffusion
(ii) Drift

Question 18.
Question 19.