Papers by Martijn Tassaert
Optics Express, 2015
We present a five-channel wavelength division multiplexed modulator module that heterogeneously i... more We present a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 200 GHz channel-spacing silicon arrayed-waveguide grating multiplexer and a 20 Gbps electro-absorption modulator array, showing the potential for 100 Gbps transmission capacity on a 1.5x0.5 mm<sup>2</sup> footprint.
Optics express, Jan 9, 2015
Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geo... more Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.
2011 ICO International Conference on Information Photonics, 2011
We demonstrate over 8 dB gain in pulsed regime in an InP/InGaAlAs membrane waveguide heterogeneou... more We demonstrate over 8 dB gain in pulsed regime in an InP/InGaAlAs membrane waveguide heterogeneously integrated on a Silicon-On-Insulator waveguide circuit and optically pumped through the silicon waveguide layer, using a peak pump power of only 4.5 mW. This is an important step towards a CMOS-compatible optical amplifier for intra-chip optical interconnects.
2009 International Conference on Photonics in Switching, 2009
We propose an integrated all-optical switch with a low operating power that allows continuous wav... more We propose an integrated all-optical switch with a low operating power that allows continuous wave operation. To achieve switching in an efficient way, we use the free carrier dispersion effect in a III-V multi-quantum well layer bonded on a silicon on insulator ring resonator. Using Mach-Zehnder interferometers for coupling light in and out the ring, we theoretically show that switching
2012 Optical Interconnects Conference, 2012
ABSTRACT We demonstrate the use of a Membrane-InP-Switch(MIPS) on-silicon as a signal regenerator... more ABSTRACT We demonstrate the use of a Membrane-InP-Switch(MIPS) on-silicon as a signal regenerator. A receiver sensitivity enhancement >2.5dB across the entire C-band and a tripling of Extinction Ratio(ER) for low ER signals at 1Gb/sec is demonstrated.
7th IEEE International Conference on Group IV Photonics, 2010
In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier h... more In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier heterogeneously integrated on a silicon-on-insulator waveguide circuit through wafer bonding technology. 10μm long adiabatic tapers allow a full power transfer from the silicon waveguide layer to the III-V membrane. Low-power consumption is expected, given the high optical confinement in the 100nm thick III-V membrane waveguide, making it
Optics Letters, 2015
An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the fi... more An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III-V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated.
Optics Letters, 2015
An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the fi... more An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III-V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated.
2013 IEEE Photonics Conference, 2013
ABSTRACT Recently we demonstrated a novel type of hybrid silicon laser based on resonant grating ... more ABSTRACT Recently we demonstrated a novel type of hybrid silicon laser based on resonant grating cavity mirrors. The first optically-pumped proof-of-principle device measures 2μm by 55μm, requires milliWatt-level threshold power and has a side-mode suppression ratio of 39 dB. In this work we discuss the challenges and propose a scheme for porting the concept to an electrically pumped device. The novel implementation combines a high-Q cavity with an advanced III-V waveguide design to reach the same properties as the demonstrated optically pumped laser.
We discuss the use of active and passive InP membrane structures, heterogeneously integrated onto... more We discuss the use of active and passive InP membrane structures, heterogeneously integrated onto SOI passive circuits, for switching applications such as gating, wavelength conversion and all-optical flip-flopping. Devices include microdisk lasers and resonators, as well as travelling wave structures, in either electrically pumped or unpumped configuration. We also pay some attention to the fabrication aspects.
Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2013, 2013
ABSTRACT Operation of an optically controlled 1×4 remote node, based on membrane InP switches and... more ABSTRACT Operation of an optically controlled 1×4 remote node, based on membrane InP switches and SOI waveguide circuits, is shown. Extinction ratio >25dB and penalty-free operation for 10Gb/s 231-1 PRBS data through the switch are demonstrated.
Optics express, Jan 9, 2015
Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geo... more Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.
Optoelectronic Integrated Circuits XIII, 2011
... [5] Olsson, F., Xie, M., Lourdudoss, S., Prieto, I., and Postigo, PA, Epitaxial lateral over... more ... [5] Olsson, F., Xie, M., Lourdudoss, S., Prieto, I., and Postigo, PA, Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer, Journal of Applied Physics 104(9), 093112 (6 pp.) (2008). ...
Computing in Science & Engineering, 2000
1521-9615/11/$26.00
Photonics, 2015
In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circui... more In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.
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Papers by Martijn Tassaert