Scribd Logo
Upload

Welcome to Scribd!

  • 61 views

    2SD1650

    Uploaded by

    Alejandro Borrego Dominguez
    This document provides product specifications for the 2SD1650 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PML package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-emitter voltage of 800V and collector current of 3.5A. - Electrical characteristics include a typical collector-emitter saturation voltage of 5-8V at 2.5A collector current, DC current gain of 8 or higher, and transition frequency of 3MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SD1650

    Uploaded by

    Alejandro Borrego Dominguez
    61 views3 pages
    This document provides product specifications for the 2SD1650 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PML package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-emitter voltage of 800V and collector current of 3.5A. - Electrical characteristics include a typical collector-emitter saturation voltage of 5-8V at 2.5A collector current, DC current gain of 8 or higher, and transition frequency of 3MHz minimum.

    Original Description:

    2SD1650

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides product specifications for the 2SD1650 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PML package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-emitter voltage of 800V and collector current of 3.5A. - Electrical characteristics include a typical collector-emitter saturation voltage of 5-8V at 2.5A collector current, DC current gain of 8 or higher, and transition frequency of 3MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    61 views3 pages

    2SD1650

    Uploaded by

    Alejandro Borrego Dominguez
    This document provides product specifications for the 2SD1650 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PML package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-emitter voltage of 800V and collector current of 3.5A. - Electrical characteristics include a typical collector-emitter saturation voltage of 5-8V at 2.5A collector current, DC current gain of 8 or higher, and transition frequency of 3MHz minimum.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 3

    SavantIC Semiconductor

    Product Specification

    2SD1650

    Silicon NPN Power Transistors

    DESCRIPTION
    With TO-3PML package
    Built-in damper diode
    High breakdown voltage
    High speed switching
    APPLICATIONS
    For color TV horizontal output applications
    PINNING
    PIN

    DESCRIPTION

    Base

    Collector

    Emitter

    Fig.1 simplified outline (TO-3PML) and symbol

    ABSOLUTE MAXIMUM RATINGS AT Tc=25


    SYMBOL

    PARAMETER

    CONDITIONS

    VALUE

    UNIT
    V

    VCBO

    Collector-base voltage

    Open emitter

    1500

    VCEO

    Collector-emitter voltage

    Open base

    800

    VEBO

    Emitter-base voltage

    Open collector

    3.5

    50

    IC

    Collector current

    PC

    Collector power dissipation

    Tj

    Junction temperature

    150

    Tstg

    Storage temperature

    -55~150

    TC=25

    SavantIC Semiconductor

    Product Specification

    2SD1650

    Silicon NPN Power Transistors


    CHARACTERISTICS
    Tj=25

    unless otherwise specified

    SYMBOL

    PARAMETER

    CONDITIONS

    V(SUS)CEO

    Collector-emitter sustaining voltage

    IC=0.1A , IB=0

    VCEsat

    Collector-emitter saturation voltage

    IC=2.5A ;IB=0.8A

    VBEsat

    Base-emitter saturation voltage

    ICBO

    MIN

    TYP.

    MAX

    800

    UNIT
    V

    5.0

    8.0

    IC=2.5A ;IB=0.8A

    1.5

    Collector cut-off current

    VCB=800V; IE=0

    10

    ICES

    Collector cut-off current

    VCES=1500V; RBE==

    1.0

    mA

    IEBO

    Emitter cut-off current

    VEB=4V; IC=0

    40

    130

    mA

    hFE

    DC current gain

    IC=0.5A ; VCE=5V

    fT

    Transition frequency

    IC=0.5A ; VCE=10V

    VF

    Diode forward voltage

    IF=3.5A

    MHz
    2.0

    SavantIC Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)

    2SD1650

    You might also like