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    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Alex Souza
    This document provides the product specification for the 2SC4029 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PL package and is intended for power amplifier applications up to 120W. - Absolute maximum ratings include 230V collector-emitter voltage, 15A collector current, and 150W collector power dissipation. - Electrical characteristics include a 230V collector-emitter breakdown voltage, 3.0V collector-emitter saturation voltage at 8A collector current, and a DC current gain of 55 at 1A collector current that decreases to 35 at 7A collector current.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Alex Souza
    95 views4 pages
    This document provides the product specification for the 2SC4029 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PL package and is intended for power amplifier applications up to 120W. - Absolute maximum ratings include 230V collector-emitter voltage, 15A collector current, and 150W collector power dissipation. - Electrical characteristics include a 230V collector-emitter breakdown voltage, 3.0V collector-emitter saturation voltage at 8A collector current, and a DC current gain of 55 at 1A collector current that decreases to 35 at 7A collector current.

    Original Description:

    condutor de calor homeostatico

    Original Title

    2SC4029

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    This document provides the product specification for the 2SC4029 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PL package and is intended for power amplifier applications up to 120W. - Absolute maximum ratings include 230V collector-emitter voltage, 15A collector current, and 150W collector power dissipation. - Electrical characteristics include a 230V collector-emitter breakdown voltage, 3.0V collector-emitter saturation voltage at 8A collector current, and a DC current gain of 55 at 1A collector current that decreases to 35 at 7A collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    95 views4 pages

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Uploaded by

    Alex Souza
    This document provides the product specification for the 2SC4029 silicon NPN power transistor from SavantIC Semiconductor. Key details include: - It has a TO-3PL package and is intended for power amplifier applications up to 120W. - Absolute maximum ratings include 230V collector-emitter voltage, 15A collector current, and 150W collector power dissipation. - Electrical characteristics include a 230V collector-emitter breakdown voltage, 3.0V collector-emitter saturation voltage at 8A collector current, and a DC current gain of 55 at 1A collector current that decreases to 35 at 7A collector current.

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    SavantIC Semiconductor

    Product Specification

    2SC4029

    Silicon NPN Power Transistors

    DESCRIPTION
    With TO-3PL package
    Complement to type 2SA1553
    APPLICATIONS
    Power amplifier applications
    Recommended for 120W high fidelity audio
    frequency amplifier output stage
    PINNING
    PIN

    DESCRIPTION

    Base

    Collector;connected to
    mounting base

    Emitter

    Fig.1 simplified outline (TO-3PL) and symbol

    Absolute maximum ratings(Ta=25 )


    SYMBOL

    PARAMETER

    CONDITIONS

    VALUE

    UNIT

    VCBO

    Collector-base voltage

    Open emitter

    230

    VCEO

    Collector-emitter voltage

    Open base

    230

    VEBO

    Emitter-base voltage

    Open collector

    IC

    Collector current

    15

    IB

    Base current

    1.5

    PC

    Collector power dissipation

    150

    Tj

    Junction temperature

    150

    Tstg

    Storage temperature

    -55~150

    TC=25

    SavantIC Semiconductor

    Product Specification

    2SC4029

    Silicon NPN Power Transistors


    CHARACTERISTICS
    Tj=25

    unless otherwise specified

    SYMBOL

    PARAMETER

    V(BR)CEO

    Collector-emitter breakdown voltage

    IC=50mA ;IB=0

    VCEsat

    Collector-emitter saturation voltage

    IC=8A ;IB=0.8A

    3.0

    VBE

    Base-emitter voltage

    IC=7A ; VCE=5V

    1.5

    ICBO

    Collector cut-off current

    VCB=230V IE=0

    IEBO

    Emitter cut-off current

    VEB=5V; IC=0

    hFE-1

    DC current gain

    IC=1A ; VCE=5V

    55

    hFE-2

    DC current gain

    IC=7A ; VCE=5V

    35

    Transition frequency

    IC=1A ; VCE=5V

    30

    MHz

    Collector output capacitance

    f=1MHz;VCB=10V

    270

    pF

    fT
    COB

    CONDITIONS

    hFE-1 classifications
    R

    55-110

    80-160

    MIN

    TYP.

    MAX

    230

    UNIT
    V

    160

    SavantIC Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:0.50 mm)

    2SC4029

    SavantIC Semiconductor

    Product Specification

    Silicon NPN Power Transistors

    2SC4029

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