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    Transistor de Celular

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    RUBEN
    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. The transistor is rated for power switching applications up to 400V collector-emitter voltage and 0.2A continuous collector current. The document lists maximum ratings, electrical characteristics including DC current gain, breakdown voltages, and switching speeds. It also classifies the range of DC current gain for the transistor.

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    © All Rights Reserved
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    Transistor de Celular

    Uploaded by

    RUBEN
    47 views2 pages
    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. The transistor is rated for power switching applications up to 400V collector-emitter voltage and 0.2A continuous collector current. The document lists maximum ratings, electrical characteristics including DC current gain, breakdown voltages, and switching speeds. It also classifies the range of DC current gain for the transistor.

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    transistores de potencia

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    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. The transistor is rated for power switching applications up to 400V collector-emitter voltage and 0.2A continuous collector current. The document lists maximum ratings, electrical characteristics including DC current gain, breakdown voltages, and switching speeds. It also classifies the range of DC current gain for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    47 views2 pages

    Transistor de Celular

    Uploaded by

    RUBEN
    This document provides specifications for a TO-92 plastic-encapsulated NPN transistor. The transistor is rated for power switching applications up to 400V collector-emitter voltage and 0.2A continuous collector current. The document lists maximum ratings, electrical characteristics including DC current gain, breakdown voltages, and switching speeds. It also classifies the range of DC current gain for the transistor.

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    © All Rights Reserved
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    -

    - TDD- D A Y A

    RoHS

    TO-92 Plastic-Encapsulate Transistors

    COMPLIANCE

    13001

    TRANSISTOR (NPN)
    TO-92

    FEATURES
    power switching applications

    1. BASE

    2. COLLECTOR

    MAXIMUM RATINGS (TA=25 unless otherwise noted)


    Symbol

    Parameter

    3. EMITTER

    Value

    Units

    VCBO

    Collector -Base Voltage

    600

    VCEO

    Collector-Emitter Voltage

    400

    VEBO

    Emitter-Base Voltage

    IC

    Collector Current -Continuous

    0.2

    PC

    Collector Power Dissipation

    0.75

    TJ

    Junction Temperature

    150

    Tstg

    Storage Temperature

    -55-150

    1 2 3

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


    Parameter

    Symbol

    Test

    conditions

    MIN

    TYP

    MAX

    UNIT

    Collector-base breakdown voltage

    V(BR)CBO

    IC= 100A , IE=0

    600

    Collector-emitter breakdown voltage

    V(BR)CEO

    IC= 1mA , IB=0

    400

    Emitter-base breakdown voltage

    V(BR)EBO

    IE= 100A, IC=0

    Collector cut-off current

    ICBO

    VCB= 600V , IE=0

    100

    Collector cut-off current

    ICEO

    VCE= 400V, IB=0

    200

    Emitter cut-off current

    IEBO

    VEB=

    100

    hFE(1)

    VCE= 20V, IC= 20mA

    10

    hFE(2)

    VCE= 10V, IC= 0.25 mA

    DC current gain

    7V, IC=0

    40

    Collector-emitter saturation voltage

    VCE(sat)

    IC= 50mA, IB= 10 mA

    0.5

    Base-emitter saturation voltage

    VBE(sat)

    IC= 50 mA, IB= 10mA

    1.2

    Transition frequency

    fT

    Fall time

    tf

    Storage time

    tS

    CLASSIFICATION OF hFE(1)
    Range

    10-25

    20-30

    25-35

    VCE= 20V, IC=20mA


    f = 1MHz
    VCC=45V, IC=50mA
    IB1= -IB2=5mA

    MHz
    0.3

    1.5

    - TDD- D A Y A
    -

    13001

    RoHS
    COMPLIANCE

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