Scribd Logo
Upload

Welcome to Scribd!

  • 81 views

    Datasheet 13003

    Uploaded by

    Heriberto Flores Ampie
    The TS13001 is a high voltage NPN transistor with a BVCEO of 400V and BVCBO of 500V. It has an Ic of 0.1A and VCE(SAT) of 0.5V at an Ic/Ib of 50mA/10mA. It features high voltage, high speed switching and a silicon triple diffused structure. The transistor has a TO-92 package and absolute maximum ratings of 0.1A collector current, 0.6W power dissipation, and an operating junction temperature range of -55 to +150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Datasheet 13003

    Uploaded by

    Heriberto Flores Ampie
    81 views2 pages
    The TS13001 is a high voltage NPN transistor with a BVCEO of 400V and BVCBO of 500V. It has an Ic of 0.1A and VCE(SAT) of 0.5V at an Ic/Ib of 50mA/10mA. It features high voltage, high speed switching and a silicon triple diffused structure. The transistor has a TO-92 package and absolute maximum ratings of 0.1A collector current, 0.6W power dissipation, and an operating junction temperature range of -55 to +150°C.

    Original Description:

    datasheet

    Original Title

    datasheet 13003

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The TS13001 is a high voltage NPN transistor with a BVCEO of 400V and BVCBO of 500V. It has an Ic of 0.1A and VCE(SAT) of 0.5V at an Ic/Ib of 50mA/10mA. It features high voltage, high speed switching and a silicon triple diffused structure. The transistor has a TO-92 package and absolute maximum ratings of 0.1A collector current, 0.6W power dissipation, and an operating junction temperature range of -55 to +150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    81 views2 pages

    Datasheet 13003

    Uploaded by

    Heriberto Flores Ampie
    The TS13001 is a high voltage NPN transistor with a BVCEO of 400V and BVCBO of 500V. It has an Ic of 0.1A and VCE(SAT) of 0.5V at an Ic/Ib of 50mA/10mA. It features high voltage, high speed switching and a silicon triple diffused structure. The transistor has a TO-92 package and absolute maximum ratings of 0.1A collector current, 0.6W power dissipation, and an operating junction temperature range of -55 to +150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 2

    TS13001

    High Voltage NPN Transistor


    BVCEO = 400V
    BVCBO = 500V
    Ic = 0.1A
    VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA

    Pin assignment:
    1. Emitter
    2. Collector
    3. Base

    Features

    Ordering Information

    High voltage.

    Part No.

    High speed switching


    Structure

    Packing

    TS13001CT

    Package

    Bulk

    TO-92

    Silicon triple diffused type.

    NPN silicon transistor


    Absolute Maximum Rating (Ta = 25 oC

    unless otherwise noted)

    Parameter

    Symbol

    Limit

    Unit

    Collector-Base Voltage

    VCBO

    500V

    Collector-Emitter Voltage

    VCEO

    400V

    Emitter-Base Voltage

    VEBO

    IC

    0.1

    Collector Current

    DC
    Pulse

    Collector Power Dissipation

    TO-92

    Operating Junction Temperature

    0.3
    PD

    0.6
    +150

    - 55 to +150

    TJ

    Operating Junction and Storage Temperature Range


    Note: 1. Single pulse, Pw = 5mS, Duty <= 10%

    TSTG

    W
    o

    Electrical Characteristics
    Ta = 25 oC unless otherwise noted

    Parameter

    Conditions

    Symbol

    Min

    Typ

    Max

    Unit

    Static
    Collector-Base Voltage

    IC = 10mA, IB = 0

    BVCBO

    500

    --

    --

    Collector-Emitter Breakdown Voltage

    IC = 10mA, IE = 0

    BVCEO

    400

    --

    --

    Emitter-Base Breakdown Voltage

    IE = 1mA, IC = 0

    BVEBO

    --

    --

    Collector Cutoff Current

    VCB = 500V, IE = 0

    ICBO

    --

    --

    100

    uA

    Emitter Cutoff Current

    VEB = 7V, IC = 0

    Collector-Emitter Saturation Voltage

    IC / IB = 50mA / 10mA

    IEBO

    --

    --

    0.01

    uA

    VCE(SAT)

    --

    --

    0.5

    DC Current Gain

    VCE = 5V, IC = 20mA

    hFE

    10

    --

    40

    Output Capacitance

    VCB = 10V, f = 0.1MHz

    Cob

    --

    --

    pF

    Storage Time

    VCE = 250V, IC = 5 Ib,

    ts

    --

    --

    2.0

    uS

    Fall Time

    Ib1=Ib2=40mA

    tf

    --

    --

    0.8

    Note : pulse test: pulse width <=5mS, duty cycle <=10%

    TS13001

    1-2

    2003/12 rev. B

    TO-92 Mechanical Drawing


    A

    DIM

    A
    B
    C

    TO-92 DIMENSION
    MILLIMETERS
    INCHES
    MIN

    MAX

    MIN

    MAX

    4.30
    4.30

    4.70
    4.70

    0.169
    0.169

    0.185
    0.185

    14.30(typ)

    0.563(typ)

    0.43

    0.49

    0.017

    0.019

    E
    F

    2.19
    3.30

    2.81
    3.70

    0.086
    0.130

    0.111
    0.146

    2.42

    2.66

    0.095

    0.105

    0.37

    0.43

    0.015

    0.017

    TS13001

    2-2

    2003/12 rev. B

    You might also like