BC549
BC549
BC549
NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups
A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549 is a low-noise type and available in groups B and C. As complementary types, the PNP transistors BC556 BC559 are recommended.
FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
Symbol Collector-Base Voltage BC546 BC547 BC548, BC549 BC546 BC547 BC548, BC549 BC546 BC547 BC548, BC549 BC546, BC547 BC548, BC549 VCBO VCBO VCBO VCES VCES VCES VCEO VCEO VCEO VEBO VEBO IC ICM IBM IEM Ptot Tj TS
Unit V V V V V V V V V V V mA mA mA mA mW C C
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
4/98
Min.
Typ.
Max.
Unit
Current Gain Group A B C Current Gain Group A Input Impedance B C Output Admittance Current Gain Group A B C
Reverse Voltage Transfer Ratio
hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre
1.6 3.2 6
220 330 600 2.7 4.5 8.7 18 30 60 1.5 104 2 104 3 104
k k k S S S
at VCE = 5 V, IC = 2 mA
hFE hFE hFE hFE hFE hFE hFE hFE hFE RthJA VCEsat VCEsat VBEsat VBEsat VBE VBE
90 150 270 180 290 500 120 200 400 80 200 700 900 660 0.2 0.2 0.2
K/W mV mV mV mV mV mV nA nA nA A A
at VCE = 5 V, IC = 100 mA
Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Collector-Emitter Cutoff Current at VCE = 80 V at VCE = 50 V at VCE = 30 V at VCE = 80 V, Tj = 125 C at VCE = 50 V, Tj = 125 C
1)
BC546 BC547
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Min.
Max. 4 4 6
Unit A A MHz pF pF
Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz Emitter-Base Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC546, BC547 BC548 BC549 BC549
F F F
2 1.2 1.4
10 4 4
dB dB dB
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