NPN/PNP Silicon AF Transistor Array: BC847PN

BC847PN
NPN/PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package
4 5 6
2 1
VPS05604
Tape loading orientation

Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side
EHA07193
TR1
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
C1 6
B2 5
E2 4
TR2
1 E1
2 B1
3 C2
EHA07177
Type BC847PN
Maximum Ratings Parameter
Marking 1Ps
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 45 50 50 5 100 200 250 150 -65 ... 150 mW C V V mA Unit V
Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature
Thermal Resistance
Junction - soldering point1)
RthJS
140
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Jul-02-2001
BC847PN
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 580 660 750 820 VBEsat 700 900 VCEsat 90 200 300 650 hFE 200 250 290 630 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 50 V(BR)CBO 50 V(BR)CEO 45 typ. max.
Unit
nA A -
mV
1) Pulse test: t < 300s; D < 2%
Jul-02-2001
BC847PN
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics per Transistor Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz h22e 30 h21e 330 h12e 2 h11e 4.5 Ceb 10 Ccb 2 fT 250 typ. max.
Unit
MHz pF
k 10-4 S
Jul-02-2001
BC847PN
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (t p)
10 3
K/W
10 3
Ptotmax / PtotDC
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
10
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
10
tp
tp
Jul-02-2001
BC847PN
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO )

BC 846...850 EHP00361
Transition frequency fT = f (IC) VCE = 5V

10 3 MHz
EHP00363
C CB0 ( C EB0 )
12 pF 10
fT
C EB
10 2
5
C CB
0 10 -1
10 0
V VCB0
10 1 (VEB0 )
10 1 10 -1
5 10 0
10 1
mA
10 2
Collector cutoff current ICBO = f (TA) VCB = 30V

10 4 nA
EHP00381
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20

10 2
EHP00367
CB0
10 3 5 10 2 5 10 1 5 10 5 10 -1
0
mA 100 C 25 C -50 C
max
10 1 5
typ
10 5
50
100
C TA
150
10 -1
0.1
0.2
0.3
0.4
V 0.5 VCEsat
Jul-02-2001
BC847PN
DC current gain hFE = f (IC ) VCE = 5V

10 3
EHP00365
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20

10 2
EHP00364
h FE 5
100 C 25 C
C mA
100 C 25 C -50 C
10 2 5
-50 C
10 1 5
10 1 5
10 0 5
10 0 10 -2
5 10 -1
5 10 0
5 10 1
mA 10 2
10 -1
0.2
0.4
0.6
0.8
1.2
V BEsat
h parameter he = f (IC) normalized VCE = 5V

10 2 he 5
EHP00368
h parameter he = f (VCE) normalized IC = 2mA

EHP00369
2.0
he
h 11e
1.5
C = 2 mA h 21 e
h 11 e
10 1 5 h 12e
VCE = 5 V
1.0
h 12 e h 22 e
10 0 h 21e 5 h 22e 10 -1
0 0.5
10 -1
10 0
mA
10 1
10
20
V VCE
30
Jul-02-2001

NPN/PNP Silicon AF Transistor Array: BC847PN

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BC847PN

Tape loading orientation

Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Junction - soldering point1)

1For calculation of RthJA please refer to Application Note Thermal Resistance

1) Pulse test: t < 300s; D < 2%

Total power dissipation Ptot = f (TS )

Permissible Pulse Load RthJS = f (tp )

Permissible Pulse Load Ptotmax / PtotDC = f (t p)

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO )

Transition frequency fT = f (IC) VCE = 5V

Collector cutoff current ICBO = f (TA) VCB = 30V

Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20

DC current gain hFE = f (IC ) VCE = 5V

Base-emitter saturation voltage IC = f (VBEsat), hFE = 20

h parameter he = f (IC) normalized VCE = 5V

h parameter he = f (VCE) normalized IC = 2mA

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