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    KSP10

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    KSP10

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    KSP10

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    Quote Discrete
    -> Transistors
    Cross Reference
    -> Bipolar
    New Circuits -> General Purpose
    Browse by -> NPN
    Function
    Members Log In Description: NPN Epitaxial Silicon Transistor
    Register as a
    Company: Fairchild Semiconductor
    member
    New Distributor Datasheet : download File size : 334 kB

    Datasheet text preview:


    Contact
    KSP10
    DigChip Toolbar KSP10
    Manufacturers List VHF/UHF transistor
    Companies News 1
    T O -9 2
    Parts: 0-C D-L M-R
    1. Base 2. Emitter 3. Collector
    S-Z
    NPN Epitaxial Silicon Transistor
    Stock: 0-C D-L M-R Absolute Maximum Ratings Ta=25°C unless otherwise noted
    S-Z Symbol VCBO VCEO VEBO PC PC TJ TSTG Rth(j-c) Rth(j-a) Par a m e t e r Collector-Base Voltage
    Change Language Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation (Ta=25°C) Derate above
    25°C Collector Power Dissipation (TC=25°C) Derate above 25°C Junction Temperature Storage
    Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value
    30 25 3. 0 350 2. 8 1.0 8. 0 150 - 55~150 125 357 U n i ts V V V mW mW/°C W W/°C °C °C °C/W
    °C/W
    Electrical Characteristics Ta=25°C unless otherwise noted
    Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Co b Crb Cc·rbb´ Parameter
    Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown
    Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter
    Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
    Collector Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100µA, IE=0
    IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA,
    IB=0.4mA VCE=10V, IC=4mA VCE=10V, IC=4mA, f=100MHz VCB=10V, IE=0, f=1MHz VCB=10V,
    IE=0, f=1MHz VCB=10V, IC=4mA, f=31.8MHz 0.35 650 0. 7 0.65 9. 0 60 0.5 0.95 V V M Hz pF pF
    ps Min. 30 25 3.0 100 100 Ma x . Units V V V nA nA
    * Pulse Test: PW300µs, Duty Cycle2%
    ©2002 Fairchild Semiconductor Corporation
    Rev. A2, September 2002
    KSP10
    Typical Characteristics
    VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
    1 000
    100 00
    VC E = 10V
    IC = 10 IB
    hFE, DC CURRENT GAIN
    1 00
    100 0
    VBE(sat)
    10
    100
    V CE(sat)
    1
    1
    10
    1 00
    1 000
    10 0 .1
    1
    10
    100
    100 0
    IC[mA], COLLECTOR CURRENT
    IC[mA], COLLECTOR CURRENT
    Figure 1. DC current Gain
    Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
    fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
    10000
    140
    VCE = 10V f=100MHz
    120
    ], INPUT ADMITTANCE
    1000
    100
    80
    gib
    60
    100
    -bib
    40
    yib[
    20 100
    10
    1
    10
    100
    1000
    IC[mA], COLLECTOR CURRENT
    f[MHz], FREQUENCY
    Figure 3. Current Gain Bandwidth Product
    Figure 4. Rectangular Form
    ], FORWARD TRANSFER ADMITTANCE
    0
    100 90 80 70 60 50 40 30 20 10 0 -10 -20 -30 100 1000
    ], OUTPUT ADMITTANCE
    -1 0
    bfb
    -2 0
    -3 0
    1000MH z
    -gfb
    700
    -4 0
    yob[
    -6 0
    0
    10
    20
    30
    40
    50
    60
    70
    80
    90
    Figure 5. Polar Form
    ©2002 Fairchild Semiconductor Corporation
    gi b [
    ]
    yfb[
    400
    -5 0
    200
    100
    f[MHz], FREQUENCY
    Figure 6. Rectangular Form
    Rev. A2, September 2002
    KSP10
    Typical Characteristics (Continued)
    90 80 70 60
    6
    yfb[ ], REVERSE TRANSFER ADMITTANCE
    5
    200
    400 600
    4
    ],
    50
    jbfb[
    100
    40 30 20 10
    700
    3
    2
    -brb
    1000MH z
    1
    70
    60
    50
    40
    30
    20
    10
    0
    -1 0
    -2 0
    -3 0
    0 100
    1000
    Figure 7. Polar Form
    32
    ], OUTPUT ADMITTANCE
    1 0 -1 -2 -3
    ],
    jbrb[
    yob[
    -4 -5 -2 .0
    -1 .6
    -1 .2
    -0 .8
    -0 .4
    0 .0
    Figure 9. Polar Form
    16 14 12 10
    1000MH z
    ],
    jbob[
    8
    700
    6420
    400 200 100
    02468
    Figure 11. Polar Form
    ©2002 Fairchild Semiconductor Corporation
    gob[
    gfb[
    gfb[
    ]
    f[MHz], FREQUENCY
    Figure 8. Rectangular Form
    10 9 8 7 6 5 4 3 2
    100 200 400
    b ob
    700
    g ob
    1
    1000M Hz
    0 .4 0 .8 1 .2 1 .6 2 .0
    0 100
    100 0
    ]
    f[MHz], FREQUENCY
    Figure 10. Rectangular Form
    ]
    Rev. A2, September 2002

    Others parts begin by ks


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