PN2222A MMBT2222A PZT2222A

C
C

E
E
C
TO-92 SOT-23 SOT-223 B
B
EBC Mark:1P

NPN General Purpose Amplifier

• This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
• Sourced from process 19.

Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current 1.0 A
TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.0V 10 nA
ICBO Collector Cutoff Current VCB = 60V, IE = 0 0.01 µA
VCB = 60V, IE = 0, Ta = 125°C 10 µA
IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 µA
IBL Base Cutoff Current VCE = 60V, VEB(off) = 3.0V 20 µA
On Characteristics
hFE DC Current Gain IC = 0.1mA, VCE = 10V 35
IC = 1.0mA, VCE = 10V 50
IC = 10mA, VCE = 10V 75
IC = 10mA, VCE = 10V, Ta = -55°C 35
IC = 150mA, VCE = 10V * 100 300
IC = 150mA, VCE = 10V * 50
IC = 500mA, VCE = 10V * 40
VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, VCE = 10V 0.3 V
IC = 500mA, VCE = 10V 1.0 V
VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, VCE = 10V 0.6 1.2 V
IC = 500mA, VCE = 10V 2.0 V
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004

 Electrical Characteristics Ta=25°C unless otherwise noted (Continued)

Symbol Parameter Test Condition Min. Max. Units

Small Signal Characteristics
fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 25 pF
rb’Cc Collector Base Time Constant IC = 20mA, VCB = 20V, f = 31.8MHz 150 pS
NF Noise Figure IC = 100µA, VCE = 10V, 4.0 dB
RS = 1.0KΩ, f = 1.0KHz
Re(hie) Real Part of Common-Emitter IC = 20mA, VCE = 20V, f = 300MHz 60 Ω
High Frequency Input Impedance
Switching Characteristics
td Delay Time VCC = 30V, VEB(off) = 0.5V, 10 ns
tr Rise Time IC = 150mA, IB1 = 15mA 25 ns
ts Storage Time VCC = 30V, IC = 150mA, 225 ns
tf Fall Time IB1 = IB2 = 15mA 60 ns

Thermal Characteristics Ta=25°C unless otherwise noted

Max.
Symbol Parameter Units
PN2222A *MMBT2222A **PZT2222A
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.

Spice Model
NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 Br = 6.092 Isc = 0
Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6
Vtf = 1.7 Xtf = 3 Rb = 10)

©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004

 Typical Characteristics

V CESAT - COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

500 0.4
V CE = 5V
β = 10
400
0.3
125 °C
300
125°C
캜
0.2
200
25 °C 25 °C
캜

100 0.1
- 40 °C
- 40 °C
캜
0
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Figure 1. Typical Pulsed Current Gain Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current vs Collector Current

V BE(ON) - BASE-EMITTER ON VOLTAGE (V)

V BESAT- BASE-EMITTER VOLTAGE (V)

1
β = 10 VCE = 5V
1

- 40 °C
캜
0.8 - 40 °C

0.8 25 °C
캜 25 °C

0.6
125 °C
캜 125 °C
0.6
0.4

0.4
0.2
1 10 100 500 0.1 1 10 25
I ICC - COLLECTOR CURRENT (mA) I ICC - COLLECTOR CURRENT (mA)

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

vs Collector Current vs Collector Current
I CBO - COLLECTOR CURRENT (nA)

500
V = 40V 20 f = 1 MHz
100 CB
CAPACITANCE (pF)

16
10

12
1 C te

8
0.1
C ob
4

25 50 75 100 125 150 0.1 1 10 100

T A - AMBIENT TEMPERATURE (°C) REVERSE BIAS VOLTAGE (V)

Figure 5. Collector Cutoff Current Figure 6. Emitter Transition and Output Capacitance
vs Ambient Temperature vs Reverse Bias Voltage

©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004

 Typical Characteristics

400 400
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
320 320
V cc = 25 V V cc = 25 V

TIME (nS)
TIME (nS)

240 240

160 160 ts
tr
t off
80 80 tf
t on
td
0 0
10 100 1000 10 100 1000
I CIC - COLLECTOR CURRENT (mA) I CIC - COLLECTOR CURRENT (mA)

Figure 7. Turn On and Turn Off Times Figure 8. Switching Times vs Collector Current
vs Collector Current

CHAR. RELATIVE TO VALUES AT I C= 10mA 8

1 V CE = 10 V
T A = 25oC
PD - POWER DISSIPATION (W)

SOT-223 6
0.75 TO-92
h oe

0.5 4
SOT-23
h re

0.25 2
h fe

h ie
0 0
0 25 50 75 100 125 150 0 10 20 30 40 50 60
o
TEMPERATURE ( C) I C - COLLECTOR CURRENT (mA)

Figure 9. Power Dissipation vs Figure 10. Common Emitter Characteristics

Ambient Temperature
CHAR. RELATIVE TO VALUES AT VCE= 10V
CHAR. RELATIVE TO VALUES AT TA = 25oC

2.4 1.3
V CE = 10 V I C = 10 mA
I C = 10 mA 1.25 T A = 25oC h fe
h re
2 h ie 1.2
h fe 1.15
1.6 h ie
1.1
h oe 1.05
1.2
1
0.95 h re
0.8
0.9
0.4 0.85
h oe
0.8
0 0.75
0 20 40 60 80 100 0 5 10 15 20 25 30 35
T A - AMBIENT TEMPERATURE (o C) VCE - COLLECTOR VOLTAGE (V)

Figure 11. Common Emitter Characteristics Figure 12. Common Emitter Characteristics

©2004 Fairchild Semiconductor Corporation Rev. A1, August 2004

 Package Dimensions

TO-92

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A1, August 2004

 Package Dimensions (Continued)

SOT-23

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A1, August 2004

 Package Dimensions (Continued)

SOT-223

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A1, August 2004

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ Power247™ SuperFET™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2004 Fairchild Semiconductor Corporation Rev. I11