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    Eee132 Sii 2012 2013 Obe 20130207

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    abuakif
    This document outlines the course outcomes and program outcomes for the EEE 132 Electronic Devices course. The course aims to teach students about the basic operation of diodes and transistors through understanding the structure of semiconductors and the p-n junction. Key topics covered include semiconductor materials, energy bands, charge carriers, excess carriers, pn junctions, and the operation of field effect transistors and bipolar junction transistors. Student performance will be evaluated through tests, assignments, and a final exam. The program outcomes emphasize applying engineering knowledge, using engineering tools, designing systems, communicating, and addressing professional and societal issues.

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    Eee132 Sii 2012 2013 Obe 20130207

    Uploaded by

    abuakif
    2K views2 pages
    This document outlines the course outcomes and program outcomes for the EEE 132 Electronic Devices course. The course aims to teach students about the basic operation of diodes and transistors through understanding the structure of semiconductors and the p-n junction. Key topics covered include semiconductor materials, energy bands, charge carriers, excess carriers, pn junctions, and the operation of field effect transistors and bipolar junction transistors. Student performance will be evaluated through tests, assignments, and a final exam. The program outcomes emphasize applying engineering knowledge, using engineering tools, designing systems, communicating, and addressing professional and societal issues.

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    OBE form EEE132

    Original Title

    EEE132_SII_2012_2013_OBE_20130207

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    This document outlines the course outcomes and program outcomes for the EEE 132 Electronic Devices course. The course aims to teach students about the basic operation of diodes and transistors through understanding the structure of semiconductors and the p-n junction. Key topics covered include semiconductor materials, energy bands, charge carriers, excess carriers, pn junctions, and the operation of field effect transistors and bipolar junction transistors. Student performance will be evaluated through tests, assignments, and a final exam. The program outcomes emphasize applying engineering knowledge, using engineering tools, designing systems, communicating, and addressing professional and societal issues.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    2K views2 pages

    Eee132 Sii 2012 2013 Obe 20130207

    Uploaded by

    abuakif
    This document outlines the course outcomes and program outcomes for the EEE 132 Electronic Devices course. The course aims to teach students about the basic operation of diodes and transistors through understanding the structure of semiconductors and the p-n junction. Key topics covered include semiconductor materials, energy bands, charge carriers, excess carriers, pn junctions, and the operation of field effect transistors and bipolar junction transistors. Student performance will be evaluated through tests, assignments, and a final exam. The program outcomes emphasize applying engineering knowledge, using engineering tools, designing systems, communicating, and addressing professional and societal issues.

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    COURSEOUTCOMES&PROGRAMOUTCOMES

    Subject:EEE132ElectronicDevices Lecturer:DrTunZainalAzniZulkifli Rooms:2.18A/1.13 Extension:6049/6010 email:eezainal@eng.usm.my COURSEDESCRIPTION Diodesandtransistorsaretypicaldevicesinelectroniccircuits,whicharemadeofsemiconductormaterials.To understandtheoperationofthesedevices,basicknowledgeofthestructureofatomsandtheinteractionof atomicparticlesinthesemiconductormaterialarenecessary.Thepnjunctionformedbyadjacentpandn semiconductorsisthebasisoftheoperationofthediodesandtransistors.Thiscoursediscussesonthecurrent flowacrossthepnjunctionthatcontributestothecharacteristicsofthediodes,BJTsandFETs. PO1Abilitytoapplyknowledgeofmathematicsandscienceinelectricalandelectronic engineering. PO2Abilitytousecurrenttechniques,skillsandengineeringtoolsnecessaryforsolving electricalandelectronicengineeringproblems. PO3Abilitytodesignanddevelopanelectricalandelectronicengineeringsysteminfulfilling desiredneedswithinpracticalconstraints. PO4Abilitytocommunicateandfunctioninmultidisciplinaryenvironment.

    PROGRAMOUTCOMES

    PO5Abilitytoidentify,analyzes,formulateandsolveelectricalandelectronicengineering problemsbothefficientlyandeconomically. PO6Abilitytounderstandandadheretoprofessionalpracticesandethicalresponsibilities.

    PO7Abilitytounderstandtheimpactofengineeringsolutionsinaglobal,economic, environmentalandsocietalcontext. Text: 1) Streetman, B. G. and Banerjee, S. K. (2006) Solid State Electronic Devices , 6th Edition, New Jersey: Prentice Hall. 2)Singh,J.(2001)SemiconductorDevices:BasicPrinciples,NewJersey:JohnWiley.

    GRADING:
    Test10% Assignments20% FinalExaminations70% Total100% COURSEOUTCOMES 1 TEACHINGCONTENTS Semiconductor Materials HRS 0.5 PO1 PO2 PO3 PO4 PO5 PO6 PO7

    CO1 - To describe, determine and calculate Crystal Properties and Growth of Semiconductors

    Crystal Lattice

    Bulk Crystal Growth

    0.5

    Epitaxial Growth Photoelectric Effect and Atomic Spectra Bohr Model Quantum Mechanics, Heisenberg and Shrodinger Equations Atomic Structure and Periodic Table Bonding Forces and Energy Bands in Solids Charge Carriers in Semiconductors Carrier Concentrations Drift of Carriers in Electric and Magnetic Fields

    1.5

    6 CO2 - To describe Atoms and Electrons qualitatively and quantitatively 7

    1.5

    1.5

    CO3 - To describe Energy Bands and Charge Carriers in Semiconductors qualitatively and quantitatively

    10

    11

    12

    13

    Optical Absorption

    CO4 - To describe Excess Carriers in Semiconductors qualitatively and quantitatively

    14

    Luminescence Carrier Lifetime and Photoconductivity Diffusion of Carriers

    0.5

    15

    16

    1.5

    17

    Fabrications of pn Junctions

    18

    Equilibrium Conditions Forward- and ReverseBiased Junctions: Steady State Conditions Reverse-Bias Breakdown

    19

    20

    21

    Transient and AC Conditions Deviation from Simple Theory Metal Semiconductor Junctions Transistor Operation

    22

    0.5

    23

    0.5

    24

    25

    JFET The Metal-Semiconductor FET The Metal-InsulatorSemiconductor FET The MOS FET Fundamental of BJT Operation Amplification with BJTs

    26 CO5 - To describe Junctions qualitatively and quantitatively and their analysis and application to FET and BJT

    27

    28

    29

    30

    0.5

    31

    BJT Fabrication

    0.5

    32

    Minority Carrier Distributions and Terminal Current Generalized Biasing

    0.5

    33

    0.5

    34

    Switching

    0.5

    35

    Other Important Effects

    0.25

    36 \

    Frequency Limitation of Transistors

    0.25

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